FGH40N60SMD [ONSEMI]
600 V、40 A、1.9 V、TO-247场截止 IGBT;
| 型号： | FGH40N60SMD |
| 厂家： | 
ONSEMI |
| 描述： | 600 V、40 A、1.9 V、TO-247场截止 IGBT 局域网 栅 瞄准线 双极性晶体管 功率控制 |
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IGBT - Field Stop
600 V, 40 A
FGH40N60SMD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
nd
series of field stop 2 generation IGBTs offer the optimum
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performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
C
Features
• Maximum Junction Temperature : T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
G
• Low Saturation Voltage: V
• High Input Impedance
= 1.9 V (Typ) @ I = 40 A
C
E
CE(sat)
E
• Fast Switching: E
= 6.5 ꢀ J/A
• Tighten Parameter Distribution
OFF
C
G
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
COLLECTOR
(FLANGE)
Compliant
Applications
• Solar Inverter, Welder, UPS, PFC, Telecom, ESS
TO−247−3LD
CASE 340CK
MARKING DIAGRAMS
$Y&Z&3&K
FGH40N60
SMD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40N60SMD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
January, 2021 − Rev. 3
FGH40N60SMD/D
FGH40N60SMD
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
V
CES
V
GES
600
20
V
Transient Gate to Emitter Voltage
Collector Current
30
V
T
T
T
T
T
= 25°C
= 100°C
= 25°C
= 25°C
= 100°C
I
80
40
A
C
C
C
C
C
C
Collector Current
A
Pulsed Collector Current (Note 1)
Diode Forward Current
I
I
120
A
CM
I
40
A
F
Diode Forward Current
20
A
Pulsed Diode Maximum Forward Current (Note 1)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
120
A
FM
T
T
= 25°C
P
349
W
W
°C
°C
°C
C
D
= 100°C
174
C
T
−55 to +175
−55 to +175
300
J
T
stg
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (IGBT)
Symbol
Value
0.43
1.5
Unit
°C/W
°C/W
°C/W
R
ꢁ
JC
Thermal Resistance, Junction to Case (Diode)
Thermal Resistance, Junction to Ambient
R
ꢁ
JC
R
40
ꢁ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FGH40N60SMD
FGH40N60SMD
TO−247−3LD
Tube
N/A
N/A
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
V
= 0 V, I = 250 ꢀ A
600
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢂ
B
V
/
= 0 V, I = 250 ꢀ A
−
0.6
V/°C
CES
GE
C
ꢂ
T
J
CES
GES
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
ꢀ
A
CE
CES
GE
I
, V = 0 V
nA
GE
GES
CE
ON CHARACTERISTICS
G−E Threshold Voltage
V
I
C
I
C
I
C
= 250 ꢀ A, V = V
GE
3.5
−
4.5
1.9
2.1
6.0
2.5
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 40 A, V = 15 V
GE
CE(sat)
= 40 A, V = 15 V, T = 175°C
−
GE
C
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2
FGH40N60SMD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
= 30 V, V = 0 V,
−
−
−
1880
180
50
−
−
−
pF
pF
pF
ies
CE
GE
f = 1 MHz
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 40 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
12
20
16
28
120
17
1.30
0.34
1.64
−
ns
ns
d(on)
CC
G
C
R
= 6 ꢃ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
92
ns
d(off)
t
f
13
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
0.87
0.26
1.13
15
mJ
mJ
mJ
ns
E
ts
t
t
V
= 400 V, I = 40 A,
= 6 ꢃ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
t
r
22
−
ns
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
116
16
−
ns
d(off)
t
f
−
ns
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
0.97
0.60
1.57
119
13
−
mJ
mJ
mJ
nC
nC
nC
−
E
ts
−
Q
V
CE
V
GE
= 400 V, I = 40 A,
180
20
90
g
C
= 15 V
Q
ge
gc
Q
58
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Parameter
Diode Forward Voltage
Symbol
Test Conditions
Min
−
Typ
2.3
Max
2.8
−
Unit
V
V
FM
I = 20 A
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
F
= 175°C
= 175°C
= 25°C
−
1.67
48.9
36
V
Reverse Recovery Energy
E
rec
I = 20 A,
−
−
ꢀ J
ns
ns
nC
nC
F
dI /dt = 200 A/ꢀ s,
F
Diode Reverse Recovery Time
t
rr
−
−
= 175°C
= 25°C
−
110
46.8
445
Diode Reverse Recovery Charge
Q
−
−
rr
= 175°C
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGH40N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS
120
100
80
120
20 V
15 V
20 V
15 V
12V
12 V
T
C
= 25°C
T = 175°C
C
10 V
100
80
10 V
60
60
V
GE
= 8 V
V
GE
= 8 V
40
40
20
0
20
0
0
2
4
6
0
2
4
6
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
120
3.0
2.5
Common Emitter
GE
Common Emitter
V
= 15 V
V
= 15 V
GE
100
80
T
T
= 25°C
= 175°C
C
C
80 A
60
2.0
40 A
40
1.5
1.0
I
= 20 A
20
0
C
25
50
75
100 125
150 175
0
1
2
3
4
T
C,
Case Temperature (°C)
V
CE
, Collector−Emitter Voltage (V)
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 3. Typical Saturation Voltage
Characteristics
20
16
12
8
20
16
12
8
Common Emitter
C
Common Emitter
C
T
= −40°C
T
= 175°C
40 A
80 A
80 A
4
4
0
40 A
8
I
C
= 20 A
V
I
= 20 A
C
0
16
20
4
8
12
20
4
12
16
V
, Gate−Emitter Voltage (V)
, Gate−Emitter Voltage (V)
GE
GE
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs. VGE
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4
FGH40N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
15
4000
3000
2000
1000
0
Common Emitter
= 25°C
Common Emitter
= 0 V, f = 1 MHz
C
T
C
V
GE
= 25°C
T
12
9
400 V
300 V
V
= 200 V
CC
C
ies
6
C
oes
3
C
res
0
120
30
0
40
80
1
10
0.1
V
CE
, Collector−Emitter Voltage (V)
Q , Gate Charge (nC)
g
Figure 8. Gate Charge Characteristics
Figure 7. Capacitance Characteristics
100
10
1
1000
100
t
r
t
d(off)
t
d(on)
t
f
Common Emitter
= 400 V, V = 15 V
= 40 A
Common Emitter
10
1
V
I
V
I
= 400 V, V = 15 V
CC
GE
CC
GE
= 40 A
C
C
T
C
T
C
= 25°C
= 175°C
T
C
T
C
= 25°C
= 175°C
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (ꢃ)
G
R , Gate Resistance (ꢃ)
G
Figure 10. Turn−Off Characteristics
Figure 9. Turn−On Characteristics
vs. Gate Resistance
vs. Gate Resistance
1000
100
5
1
Common Emitter
V
GE
= 15 V, R = 6
ꢃ
G
T
C
T
C
= 25°C
= 175°C
t
r
E
on
E
off
t
Common Emitter
= 400 V, V = 15 V
d(on)
10
1
V
CC
GE
I
C
= 40 A
T
C
T
C
= 25°C
= 175°C
0.1
20
30
60
70
80
40
50
0
10
20
30
40
50
I , Collector Current (A)
C
R , Gate Resistance (ꢃ)
G
Figure 12. Turn−On Characteristics
Figure 11. Switching Loss vs. Gate
Resistance
vs. Collector Current
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5
FGH40N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
100
6
t
d(off)
E
on
1
t
f
E
off
10
1
Common Emitter
= 15 V, R = 6
Common Emitter
= 15 V, R = 6
V
GE
ꢃ
G
V
ꢃ
GE
G
T
C
T
C
= 25°C
= 175°C
T
C
T
C
= 25°C
= 175°C
0.1
20
30
40
50
60
70
80
20
30
40
50
60
70
80
I
C,
Collector Current (A)
I , Collector Current (A)
C
Figure 14. Switching Loss vs. Collector
Current
Figure 13. Turn−Off Characteristics
vs. Collector Current
300
100
250
200
10 ꢀ s
Square Wave
T ≤ 175°C, D = 0.5, V = 400 V
J
CE
100 ꢀ s
1ms
V
GE
= 12/0 V, R = 6 ꢃ
G
10 ms
DC
10
1
150
100
50
T
= 75°C
C
T
C
= 100°C
*Notes:
1. T = 25°C
0.1
C
2. T = 175°C
J
3. Single Pulse
0
0.01
1k
10k
100k
1M
1
10
100
1000
f, Switching Frequency (Hz)
V
CE
, Collector−Emitter Voltage (V)
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
12
10
100
T
C
T
C
= 25°C
= 175°C
di /dt = 200 A/ꢀ s
F
8
6
T
C
= 175°C
10
di /dt = 100 A/ꢀ s
F
T
C
= 25°C
4
2
0
di /dt = 200 A/ꢀ s
F
T
T
= 25°C
C
C
di /dt = 100 A/ꢀ s
F
= 175°C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
40
0
10
20
30
I , Forward Current (A)
F
V , Forward Voltage (V)
F
Figure 18. Reverse Recovery Current
Figure 17. Forward Characteristics
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6
FGH40N60SMD
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
0
5
10 15 20 25 30 35 40 45
0
5
10 15 20 25 30 35 40 45
I , Forward Current (A)
F
I , Forward Current (A)
F
Figure 20. Stored Charge
Figure 19. Reverse Recovery Time
1
0.1
0.01
0.001
−5
−4
−3
−2
−1
0
10
10
10
10
10
10
Rectangular Pulse Duration (sec)
Figure 21. Transient Thermal Impedance of IGBT
3
1
0.1
0.01
−5
−2
−1
0
−4
−3
10
10
10
10
10
10
Rectangular Pulse Duration (sec)
Figure 22. Time Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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