FGH40T70SHD-F155 [ONSEMI]
IGBT，700 V，40A，场截止沟槽;
| 型号： | FGH40T70SHD-F155 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，700 V，40A，场截止沟槽 局域网 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop, Trench
700 V, 40 A
FGH40T70SHD
Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 3rd generation IGBTs offer the optimum
performance for Solar Inverter, UPS, Welder, Telecom, ESS and PFC
applications where low conduction and switching losses are essential.
www.onsemi.com
C
Features
• Maximum Junction Temperature : T =175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
G
• Low Saturation Voltage: V
=1.7 V(Typ.) @ I = 40 A
C
CE(sat)
E
E
• 100% of the Parts Tested for I (1)
LM
• High Input Impedance
C
G
• Fast Switching
• Tighten Parameter Distribution
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
TO−247−3LD
CASE 340CH
MARKING DIAGRAM
$Y&Z&3&K
FGH40T70SHD
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40T70SHD = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
February, 2020 − Rev. 3
FGH40T70SHD/D
FGH40T70SHD
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Description
Symbol
Rating
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
V
CES
V
GES
700
20
V
30
V
T
T
T
= 25°C
= 100°C
= 25°C
I
80
40
A
C
C
C
C
Collector Current
A
Pulsed Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
I
(Note 1)
(Note 2)
120
A
LM
I
120
A
CM
T
T
= 25°C
I
40
A
C
F
= 100°C
20
A
C
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
I
(Note 2)
120
A
FM
T
T
= 25°C
P
D
268
W
W
°C
°C
°C
C
Maximum Power Dissipation
= 100°C
134
C
Operating Junction Temperature
Storage Temperature Range
T
J
−55 to +175
−55 to +175
300
T
stg
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V,V = 15 V, I = 120 A, R = 30 ꢀ , Inductive Load
CC
GE
C
G
2. Repetive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Parameter
Symbol
R (IGBT)
ꢁ
JC
Typ
−
Max
0.56
1.71
40
Unit
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
(Diode)
−
ꢁ
JC
R
−
ꢁ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FGH40T70SHD−F155
FGH40T70SHD
TO−247−3
(Pb−Free)
Tube
−
−
30
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
BV
V
= 0 V, I = 250 ꢂ A
700
−
−
−
V
CES
GE
C
Temperature Coefficient of Breakdown
Voltage
ꢃ
B
V
/ꢃ T
I = 1 mA, Reference to 25°C
C
−
0.6
V/°C
CES
J
Collector Cut−Off Current
G−E Leakage Current
I
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
ꢂ
A
CES
CE
CES
GE
I
, V = 0 V
nA
GES
GE
GES
CE
ON CHARACTERISTICs
G−E Threshold Voltage
V
I
C
I
C
I
C
= 40 mA, V = V
GE
4.0
−
5.5
1.7
7.5
2.15
−
V
V
V
GE(th)
CE
Collector to Emitter Saturation Voltage
V
= 40 A, V = 15 V
GE
CE(sat)
= 40 A, V = 15 V, T = 175°C
−
2.37
GE
C
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2
FGH40T70SHD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted) (continued)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
C
V
CE
= 30 V, V = 0 V, f = 1 MHz
−
−
−
2028
75
−
−
−
pF
pF
pF
ies
GE
Output Capacitance
C
oes
Reverse Transfer Capacitance
C
26
res
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= 400 V, I = 40 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
22
40
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
ns
ns
ꢂ J
ꢂ J
ꢂ J
ns
ns
ns
ns
ꢂ J
ꢂ J
ꢂ J
nC
nC
nC
d(on)
CC
G
C
R
= 6 ꢀ ꢄ V = 15 V,
GE
Rise Time
t
r
Inductive Load, T = 25°C
C
Turn−Off Delay Time
Fall Time
t
66
d(off)
t
f
10
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Turn−On Delay Time
Rise Time
E
on
E
off
1150
271
1421
20
E
ts
t
t
V
= 400 V, I = 40 A,
= 6 ꢀ ꢄ V = 15 V,
GE
d(on)
CC C
R
G
tr
36
Inductive Load, T = 175°C
C
Turn−Off Delay Time
Fall Time
68
d(off)
t
f
13
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
E
on
E
off
1760
455
2215
69
E
ts
Q
V
= 400 V, I = 40 A, V = 15 V
g
CE C GE
Q
13
ge
gc
Q
26
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
J
Parametr
Symbol
Test Conditions
Min
−
Typ
2.0
1.73
54
Max
2.5
−
Unit
Diode Forward Voltage
V
FM
I
= 20 A
T
C
= 25°C
= 175°C
= 175°C
= 25°C
V
F
F
T
C
−
Reverse Recovery Energy
E
rec
I
= 20 A, dI / dt = 200 A/ꢂ s
T
C
−
−
ꢂ
J
F
Diode Reverse Recovery Time
t
rr
T
C
−
37
−
ns
T
= 175°C
= 25°C
C
−
235
65
−
C
Diode Reverse Recovery Charge
Q
T
−
−
nC
rr
T
C
= 175°C
−
944
−
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3
FGH40T70SHD
TYPICAL PERFORMANCE CHARACTERISTICS
120
90
60
30
0
120
TC = 25oC
20V
15V
12V
20V
15V
12V
10V
TC = 175oC
10V
90
60
VGE = 8V
VGE = 8V
30
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector−Emitter Voltage, V [V]
Collector−Emitter Voltage, V [V]
CE
CE
Figure 2. Typical Output Characteristics
Figure 1. Typical Output Characteristics
120
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
90
60
30
0
3
80A
40A
2
IC = 20A
1
−100
0
1
2
3
4
5
−50
0
50
100
150
200
Collector−Emitter Voltage, V [V]
CE
Collector−Emitter Case Temperature, T [°C]
C
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case Temperature
at Variant Current Level
20
20
16
12
8
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
16
12
IC = 20A
40A
40A
8
80A
80A
IC = 20A
4
4
0
0
4
8
12
16
20
4
8
12
16
20
Gate−Emitter Voltage, V [V]
Gate−Emitter Voltage, V [V]
GE
GE
Figure 6. Saturation Voltage vs VGE
Figure 5. Saturation Voltage vs VGE
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4
FGH40T70SHD
TYPICAL PERFORMANCE CHARACTERISTICS
10000
1000
100
15
Common Emitter
TC = 25oC
Cies
12
VCC = 200V
400V
300V
9
Coes
6
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
3
0
Cres
10
40
60
0
20
80
11
0
30
Gate Charge, Q [nC]
Collector−Emitter Voltage, V [V]
g
CE
Figure 8. Gate Charge Characteristic
Figure 7. Capacitance Characteristics
100
1000
tr
td(off)
100
10
1
td(on)
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10
5
40
Gate Resistance, R [ꢀ ]
50
20
30
0
10
0
10
20
30
40
50
G
Gate Resistance, R [ꢀ ]
G
Figure 10. Turn−Off Characteristics vs.
Figure 9. Turn−On Characteristics vs.
Gate Resistance
Gate Resistance
100
5000
1000
tr
Eon
td(on)
Eoff
Common Emitter
VCC = 400V, VGE = 15V
Common Emitter
IC = 40A
TC = 25oC
TC = 175oC
VGE = 15V, RG = 6 ꢀ
TC = 25oC
TC = 175oC
10
5
100
20
40
60
80
0
10
20
30
40
50
Collector Current, I [A]
Gate Resistance, R [ꢀ ]
C
G
Figure 12. Turn−On Characteristics vs.
Figure 11. Switching Loss vs.
Gate Resistance
Collector Current
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5
FGH40T70SHD
TYPICAL PERFORMANCE CHARACTERISTICS
10000
500
100
Common Emitter
VGE = 15V, RG = 6 ꢀ
TC = 25oC
TC = 175oC
Eon
td(off)
1000
tf
10
Common Emitter
VGE = 15V, RG = 6ꢀ
Eoff
TC = 25oC
TC = 175oC
100
20
1
20
40
60
80
40
60
80
Collector Current, I [A]
C
Collector Current, I [A]
C
Figure 14. Switching Loss vs.
Collector Current
Figure 13. Turn−Off Characteristics vs.
Collector Current
250
200
150
100
50
300
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6ꢀ
100
10
1
10ꢂ s
TC = 25oC
100ꢂ s
1ms
10 ms
TC = 75oC
DC
*Notes:
TC = 100oC
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0
1k
0.1
10k
100k
1M
1
10
100
1000
Collector−Emitter Voltage, V [V]
Switching Frequency, f[Hz]
CE
Figure 16. SOA Characteristics
Figure 15. Load Current vs. Frequency
10
8
80
TC = 25oC
C = 175o
di/dt = 200A/ꢂ s
T
C −−−
TC = 25oC
TC = 175oC
6
4
2
0
di/dt = 100A/ꢂ s
di/dt = 200A/ꢂ s
10
TC = 75oC
TC = 25oC
C = 75oC
di/dt = 100A/ ꢂ s
T
TC = 175oC
1
30
40
10
20
0
0
1
2
3
4
5
Forward Current, I [A]
F
Forward Voltage, V [V]
F
Figure 18. Reverse Recovery Current
Figure 17. Forward Characteristics
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6
FGH40T70SHD
TYPICAL PERFORMANCE CHARACTERISTICS
350
280
210
140
70
1200
TC = 25oC
TC = 25oC
C = 175o
C
TC = 175oC −−−
T
−−−
900
600
di/dt = 100A/
di/dt = 200A/ꢂ s
ꢂ s
di/dt = 200A/ꢂ s
di/dt = 100A/ꢂ s
300
0
0
0
40
40
10
20
30
10
20
30
0
Forward Current, I
Forward Current, IF [A]
F [A]
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
0.6
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t1
t2
Duty Factor, D = t1/t2
single pulse
0.01
= Pdm x Zthjc + T
Peak T
C
j
0.005
10−5
10−4
10−3
10−2
10−1 100
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
single pulse
= Pdm x Zthjc + T
10−1 100
Peak T
C
j
0.01
10−5
10−4
10−3
10−2
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
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