FGHL40T65LQDT [ONSEMI]
IGBT - 650 V 40 A FS4 low Vce(sat) IGBT with full rated copack diode;
| 型号： | FGHL40T65LQDT |
| 厂家： | 
ONSEMI |
| 描述： | IGBT - 650 V 40 A FS4 low Vce(sat) IGBT with full rated copack diode 双极性晶体管 |
| 文件： | 总9页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Field Stop Trench IGBT
40 A, 650 V
VCE(Sat) = 1.15 V
40 A, 650 V
FGHL40T65LQDT
th
C
Field stop 4 generation Low V
IGBT technology and Full
CE(Sat)
current rated copak Diode technology.
Features
G
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
E
• Low Saturation Voltage: V
= 1.15 V (Typ.) @ I = 40 A
C
CE(Sat)
• 100% of the Parts are Tested for I (Note 2)
LM
• Smooth and Optimized Switching
• Tight Parameter Distribution
• RoHS Compliant
G
C
E
TO−247−3L
CASE 340CX
Typical Applications
• Solar Inverter
• UPS, ESS
MARKING DIAGRAM
• PFC, Converters
MAXIMUM RATINGS
Rating
Symbol Value
Unit
V
Collector−to−Emitter Voltage
V
CES
V
GES
650
&Y&Z&3&K
FGHL
40T65LQDT
Gate−to−Emitter Voltage
Transient Gate−to−Emitter Voltage
20
30
V
Collector Current (Note 1)
@ T = 25°C
I
C
60
40
A
C
@ T = 100°C
C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
I
160
160
A
A
A
LM
&Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= 3−Digit Date Code
I
CM
Diode Forward Current
@ T
25°C
100°C
I
F
60
40
C =
C =
@ T
= 2−Digit Lot Traceability Code
FGHL40T65LQDT = Specific Device Code
Pulsed Diode Maximum Forward Current
I
160
A
FM
Maximum Power Dissipation @ T = 25°C
P
D
273
136
W
C
@ T = 100°C
C
ORDERING INFORMATION
Operating Junction and Storage Temperature
Range
T ,
−55 to
+175
°C
°C
J
Device
Package
Shipping
T
STG
FGHL40T65LQDT TO−247−3L 450 Units/Tube
Maximum Lead Temp. for Soldering
Purposes (1/8″ from case for 5 s)
T
L
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Value limit by bond wire
2. V = 400 V, V = 15 V, I = 160 A, Inductive Load, 100% tested
CC
GE
C
3. Repetitive rating: pulse width limited by max. junction temperature
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2021 − Rev. 0
FGHL40T65LQDT/D
FGHL40T65LQDT
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.55
0.91
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector to Emitter breakdown voltage
V
V
= 0 V, I = 1 mA
BV
CES
650
−
−
−
−
V
GE
C
Temperature Coefficient of Breakdown
Voltage
= 0 V, I = 1 mA
0.6
V/°C
GE
C
DBV
CES
DT
J
Collector to Emitter cut−off current
Gate leakage current
V
= 0 V, V = 650 V
I
−
−
−
−
250
400
mA
GE
CE
CES
GES
V
= 20 V, V = 0 V
I
nA
GE
CE
ON CHARACTERISTICS
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
V
= V , I = 40 mA
V
GE(th)
3.0
4.5
6.0
V
V
GE
CE
C
V
= 15 V, I = 40 A, T = 25°C
= 15 V, I = 40 A, T = 175°C
V
CE(sat)
−
−
1.15
1.22
1.35
−
GE
C
J
V
GE
C J
DYNAMIC CHARACTERISTICS
Input capacitance
V
= 30 V, V = 0 V, f = 1 MHz
C
−
−
−
−
−
−
8263
93
−
−
−
−
−
−
pF
nC
CE
GE
ies
Output capacitance
C
oes
Reverse transfer capacitance
Gate charge total
C
41
res
V
CE
= 400 V, I = 40 A, V = 15 V
Q
414
43
C
GE
g
Gate−to−emitter charge
Gate−to−collector charge
Q
Q
ge
gc
134
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T = 25°C,
CC
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
24
12
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 20 A,
= 4.7 W,
t
r
I
C
R
V
G
GE
Turn−off delay time
Fall time
t
336
128
0.31
0.66
0.97
28
d(off)
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
mJ
ns
E
ts
T = 25°C,
t
t
J
CC
d(on)
V
= 400 V,
= 40 A,
= 4.7 W,
t
r
24
I
R
C
G
Turn−off delay time
Fall time
328
108
0.75
1.19
1.94
d(off)
V
GE
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
on
E
off
mJ
E
ts
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2
FGHL40T65LQDT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, INDUCTIVE LOAD
Turn−on delay time
Rise time
T = 175°C,
CC
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
24
13
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
J
d(on)
V
= 400 V,
= 20 A,
= 4.7 W,
t
r
I
C
R
V
G
GE
Turn−off delay time
Fall time
t
364
200
0.62
1.03
1.64
28
d(off)
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
on
E
off
mJ
ns
E
ts
T = 175°C,
t
t
J
CC
d(on)
V
= 400 V,
= 40 A,
= 4.7 W,
t
r
24
I
C
R
G
Turn−off delay time
Fall time
360
160
1.16
1.84
3.00
d(off)
V
GE
= 15 V
t
f
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTICS
E
on
E
off
mJ
E
ts
Diode Forward Voltage
I = 40 A, T = 25°C
V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1.7
1.65
55
2.15
−
V
F
J
FM
rec
I = 40 A, T = 175°C
F
J
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T = 25°C,
E
−
mJ
ns
nC
A
J
R
V
= 400 V,
T
42
−
rr
I = 20 A,
F
di /dt = 1000 A/ms
F
Q
322
16
−
rr
I
−
rr
T = 25°C,
E
116
84
−
mJ
ns
nC
A
J
R
rec
V
= 400 V,
T
−
rr
I = 40 A,
F
di /dt = 1000 A/ms
F
Q
648
16
−
rr
I
−
rr
T = 175°C,
E
320
98
−
mJ
ns
nC
A
J
rec
V
R
= 400 V,
T
−
rr
I = 20 A,
F
di /dt = 1000 A/ms
F
Q
1262
26
−
rr
I
−
rr
T = 175°C,
E
464
126
1652
26
−
mJ
ns
nC
A
J
rec
V
R
= 400 V,
T
−
rr
I = 40 A,
F
di /dt = 1000 A/ms
F
Q
−
rr
I
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FGHL40T65LQDT
TYPICAL CHARACTERISTICS
160
120
80
40
0
160
120
20V
15V
12V
10V
20V
15V
12V
10V
V
= 8 V
V
= 8 V
GE
GE
80
40
0
0
0.5
1
1.5
2
0
0
1
0.5
1
1.5
2
2.5
3
10
30
V
, Collector−Emitter Voltage (V)
V
, Collector−Emitter Voltage (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
(TJ = 255C)
(TJ = 1755C)
160
120
80
40
0
80
60
40
20
0
Common Emitter
Common Emitter
V
J
J
= 15 V
V
J
J
= 20 V
T = 25°C
T = 175°C
GE
CE
T = 25°C
T = 175°C
0
0.5
1
1.5
2
2.5
3
2
4
6
8
V
, Collector−Emitter Voltage (V)
V
GE
, Gate−Emitter Voltage (V)
CE
Figure 4. Typical Transfer Characteristics
Figure 3. Typical Saturation Voltage Characteristics
2.0
Common Emitter
V
GE
= 15 V
10000
1000
100
C
ies
1.5
1.0
0.5
80 A
40 A
C
oes
I
C
= 20 A
50
C
Common Emitter
= 0 V, f = 1 MHz
res
V
GE
10
−100
−50
0
100
150
200
10
, Collector−Emitter Voltage (V)
T , Junction Temperature (°C)
V
CE
J
Figure 6. Capacitance Characteristics
Figure 5. Saturation Voltage vs. Junction Temperature
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FGHL40T65LQDT
TYPICAL CHARACTERISTICS (continued)
15
12
9
Common Emitter
= 40 A
I
C
100
V
= 200 V
CC
300 V
10 ms
DC
400 V
100 ms
1ms
10ms
10
1
6
*Notes:
3
1. T = 25°C
J
2. T = 175°C
J
3. Single Pulse
0
0.1
0
100
200
300
400
500
1
10
100
1000
Q , Gate Charge (nC)
g
V
CE
, Collector−Emitter Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. SOA Characteristics
10000
1000
100
Common Emitter
= 400 V, V = 15 V
V
CC
GE
I
C
= 40 A
T = 25°C
t
J
d(off)
t
T = 175°C
d(on)
J
100
Common Emitter
t
f
t
r
V
CC
= 400 V, V = 15 V, I = 40 A
GE C
T = 25°C
J
T = 175°C
J
10
10
0
10
20
30
40
50
0
10
20
30
40
50
R , Gate Resistance (W)
g
R , Gate Resistance (W)
g
Figure 9. Turn−On Characteristics vs. Gate
Resistance
Figure 10. Turn−Off Characteristics vs. Gate
Resistance
1000
100
10
Common Emitter
V
CC
= 400 V, V = 15 V
GE
R
= 4.7 W
t
G
f
100
10
1
T = 25°C
J
t
r
T = 175°C
J
t
d(on)
t
d(off)
Common Emitter
V
R
J
J
= 400 V, V = 15 V
= 4.7 W
T = 25°C
T = 175°C
CC
GE
G
0
20
40
60
80
100
120
0
20
40
60
80
100
120
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 12. Turn−Off Characteristics vs. Collector
Current
Figure 11. Turn−On Characteristics vs. Collector
Current
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FGHL40T65LQDT
TYPICAL CHARACTERISTICS (continued)
10
Common Emitter
V
CC
= 400 V, V = 15 V
GE
R
= 4.7 W
G
E
E
off
10
1
T = 25°C
J
T = 175°C
J
E
off
1
on
E
on
Common Emitter
= 400 V, V = 15 V
V
CC
GE
I
C
= 40 A
T = 25°C
J
T = 175°C
J
0.1
0.1
0
10
20
30
40
50
0
20
40
60
80
100
120
R , Gate Resistance (W)
g
I , Collector Current (A)
C
Figure 13. Switching Loss vs. Gate Resistance
Figure 14. Switching Loss vs. Collector Current
160
120
80
40
0
30
25
20
15
10
5
Common Emitter
T = 25°C
J
T = 175°C
J
V
= 400 V
R
I = 40 A
F
T = 25°C
J
T = 175°C
J
0
400
0
1
2
3
4
5
600
800
1000
V , Forward Voltage (V)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 15. Forward Characteristics
Figure 16. Reverse Recovery Current
2500
2000
1500
1000
500
250
200
150
100
50
V
= 400 V
R
I = 40 A
F
T = 25°C
J
T = 175°C
J
V
= 400 V
R
I = 40 A
F
T = 25°C
J
T = 175°C
J
0
400
0
600
800
1000
400
600
800
1000
di /dt, Diode Current Slop (A/ms)
F
di /dt, Diode Current Slop (A/ms)
F
Figure 18. Stored Charge
Figure 17. Reverse Recovery Time
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FGHL40T65LQDT
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1
P
DM
0.5
t
1
t
2
0.1
0.2
0.1
Duty Factor, D = t /t
1
q
2
Peak T = P x Z + T
j
dm
jc
c
R
R2
1
0.05
0.02
0.01
0.01
C = t / R
2
C = t / R
1
2
2
1
1
i:
1
2
3
4
5
6
ri[K/W]: 0.0128
0.0903
0.0833
0.1235
0.1016
0.0248
t[s]:
9.495E−6 1.020E−4 4.824E−4 2.810E−3 7.520E−3 2.975E−2
Single Pulse
−6
0.001
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 19. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
P
DM
t
1
t
2
Duty Factor, D = t /t
0.1
1
2
Peak T = P x Z + T
q
j
dm
jc
c
0.05
R
R2
1
0.02
0.01
0.01
C = t / R
C = t / R
Single Pulse
2
2
2
1
1
1
i:
1
2
3
4
5
6
ri[K/W]: 0.0234
0.0513
0.2291
0.2074
0.2291
0.0715
t[s]:
2.351E−6 1.597E−5 4.097E−4 1.708E−3 1.055E−2 3.657E−2
0.001
−5
−4
−6
−3
−2
−1
0
1
10
10
10
10
10
10
10
10
Rectangular Pulse Duration (s)
Figure 20. Transient Thermal Impedance of Diode
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FGHL40T65LQDT
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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8
FGHL40T65LQDT
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相关型号：
FGHL50T65MQDTL4
IGBT - 650 V 50 A FS4 medium switching speed IGBT with full rated copack diode
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