FGY100T65SCDT [ONSEMI]
IGBT，场截止沟槽，短路额定值，650 V，100 A;
| 型号： | FGY100T65SCDT |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，场截止沟槽，短路额定值，650 V，100 A CD 双极性晶体管 |
| 文件： | 总9页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FGY100T65SCDT
Field Stop Trench IGBT,
Short Circuit Rated, 650V,
100A
General Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 3 generation IGBTs offer the optimum
performance for solar, UPS, motor control, ESS and HVAC
www.onsemi.com
rd
C
applications where low conduction and switching losses are essential.
Features
G
• Maximum Junction Temperature: T = 175°C
J
E
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 1.5 V (Typ.) @ I = 100 A
C
CE(sat)
TO−247
CASE 340CD
• Short Cirruit Rated 5 ms
• Tighten Parameter Distribution
• These Devices are Pb−Free and are RoHS Compliant
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
Applications
this data sheet.
• Solar, UPS, Motor Control, ESS, HVAC
ABSOLUTE MAXIMUM RATINGS (at T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
25
Unit
V
CES
V
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
V
V
V
A
A
A
A
A
Transient Gate to Emitter Voltage
30
I
C
Collector Current @ T = 25°C
200
100
300
300
C
Collector Current @ T = 100°C
C
I
(Note 1)
(Note 2)
Clamped Inductive Load Current @ T = 25°C
LM
C
I
Pulsed Collector Current
CM
I
F
Diode Forward Current
@ T = 25°C
200
100
C
@ T = 100°C
C
I
(Note 2)
Pulsed Diode Maximum Forward Current
300
750
A
FM
P
D
Maximum Power Dissipation @ T = 25°C
W
W
°C
°C
°C
ms
C
Maximum Power Dissipation @ T = 100°C
375
C
T
J
Operating Junction Temperature
−55 to +175
−55 to +175
300
T
stg
Storage Temperature Range
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8″ from Case for 5 seconds
T
(Note 3)
Short circuit withstanding time @ T = 150°C
5
SC
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V = 400 V, V = 15 V, I = 375 A, R = 10 W, Inductive Load.
CC
GE
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. Test condition: V = 15 V, V = 400 V.
GE
CC
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
October, 2017 − Rev. 2
FGY100T65SCDT/D
FGY100T65SCDT
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.2
Unit
R
R
(IGBT)
(Diode)
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
_C/W
_C/W
q
JC
0.3
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown
Voltage
V
I
= 0 V, I = 1 mA
650
−
−
−
−
V
CES
GE
C
DBV
/
Temperature Coefficient of
Breakdown Voltage
= 1 mA, Reference to 25_C
0.56
V/_C
CES
C
DT
J
CES
GES
I
Collector Cut-Off Current
G−E Leakage Current
V
V
= V
= V
, V = 0 V
−
−
−
−
250
400
mA
CE
CES
GE
I
, V = 0 V
nA
GE
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
= 100 mA, V = V
GE
3.5
−
5.3
1.5
6.9
1.9
−
V
V
V
GE(th)
C
CE
V
Collector to Emitter Saturation
Voltage
= 100 A, V = 15 V
GE
CE(sat)
C
I
= 100 A, V = 15 V,
GE
−
1.97
C
T
C
= 175_C
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 30 V V = 0 V,
−
−
−
6310
384
46
−
−
−
pF
pF
pF
ies
CE
,
GE
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
R
= 400 V, I = 100 A,
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
84
147
216
133
5.4
3.8
9.2
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
ns
ns
d(on)
CC
C
= 4.7 W, V = 15 V,
G
GE
t
r
Inductive Load, T = 25_C
C
t
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
ns
E
on
E
off
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
E
ts
t
t
V
= 400 V, I = 100 A,
= 4.7 W, V = 15 V,
GE
d(on)
CC C
R
G
t
r
160
244
166
9.7
5.2
14.9
157
43
ns
Inductive Load, T = 175_C
C
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
ns
E
on
E
off
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
mJ
mJ
mJ
nC
nC
nC
E
ts
Q
V
CE
V
GE
= 400 V, I = 100 A,
g
C
= 15 V
Q
ge
gc
Q
46
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FGY100T65SCDT
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
FM
Diode Forward Voltage
I = 100 A
V
F
T
C
T
C
= 25_C
−
−
1.68
1.45
2.1
−
= 175_C
E
rec
Reverse Recovery Energy
I = 100 A, dI /dt = 200 A/ms,
−
96
−
mJ
F
F
T
C
= 175_C
t
Diode Reverse Recovery Time
I = 100 A, dI /dt = 200 A/ms
ns
rr
F
F
−
−
62
251
−
−
T
T
= 25_C
C
C
= 175_C
Q
Diode Reverse Recovery Charge
I = 100 A, dI /dt = 200 A/ms
nC
rr
F
F
−
−
164
2736
−
−
T
T
= 25_C
C
C
= 175_C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Pare Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FGY100T65SCDT
FGY100T65SCDT
TO−247H03
Tube
−
−
30
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3
FGY100T65SCDT
TYPICAL PERFORMANCE CHARACTERISTICS
300
250
200
150
100
50
300
TC = 25oC
TC = 175oC
20V
15V
12V
20V
15V
250
200
150
100
50
12V
10V
10V
VGE = 8V
VGE = 8V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector−Emitter Voltage, VCE [V]
Collector−Emitter Voltage, VCE [V]
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
300
4
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
250
200
150
100
50
TC = 25oC
TC = 175oC
3
200A
2
100A
IC = 50A
0
1
−100
−50
0
50
100
150
200
0
1
2
3
4
5
Collector−Emitter Case Temperature, TC [oC]
Collector−Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
TC = 175oC
Common Emitter
TC = 25oC
16
12
100A
100A
8
200A
IC = 50A
200A
IC = 50A
4
0
4
0
4
8
12
16
20
4
8
12
16
20
Gate−Emitter Voltage, VGE [V]
Gate−Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
Figure 6. Saturation Voltage vs. VGE
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4
FGY100T65SCDT
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
10000
1000
100
15
Common Emitter
TC = 25oC
Cies
Coes
Cres
12
9
400V
VCC = 200V
300V
6
Common Emitter
VGE = 0V, f = 1MHz
3
TC = 25oC
10
0
1
10
Collector−Emitter Voltage, VCE [V]
0
40
80
120
160
200
30
Gate Charge, Qg [nC]
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 100A
TC = 25oC
TC = 175oC
td(off)
tr
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 100A
TC = 25oC
TC = 175oC
100
50
100
td(on)
0
10
20
30
40
50
0
10
Gate Resistance, RG [ ]
W
20
30
40
50
Gate Resistance, RG
[
]
W
Figure 9. Turn-on Characteristics vs. Gate
Resistance
Figure 10. Turn-off Characteristics vs. Gate
Resistance
1000
30
Eon
tr
10
100
Common Emitter
VCC = 400V, VGE = 15V
td(on)
Eoff
Common Emitter
IC = 100A
TC = 25oC
TC = 175oC
VGE = 15V, RG = 4.7W
TC = 25oC
TC = 175oC
10
1
0
10
20
30
40
50
0
50
100
150
200
Gate Resistance, RG
[
]
W
Collector Current, IC [A]
Figure 11. Switching Loss vs. Gate
Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
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5
FGY100T65SCDT
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1000
100
Common Emitter
Common Emitter
VGE = 15V, RG = 4.7 W
VGE = 15V, RG = 4.7 W
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
Eon
tf
10
td(off)
Eoff
100
50
1
0.5
0
50
100
150
200
0
50
100
150
200
Collector Current, IC [A]
Collector Current, IC [A]
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs. Collector
Current
450
360
270
180
90
500
Square Wave
TJ <= 175oC, D = 0.5, VCE = 400V
DC
ms
10
100
10
1
VGE = 15/0V, RG = 4.7
W
ms
100
TC = 25oC
1ms
10 ms
TC = 75oC
TC = 100oC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0
0.1
1k
10k
100k
1M
1
10
100
1000
Collector−Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
Figure 15. Load Current vs. Frequency
Figure 16. SOA Characteristics
300
100
30
25
20
15
10
5
TC = 25oC
T
C = 175oC −−−
ms
di/dt = 200 A/
TC = 175oC
TC = 25oC
ms
ms
di/dt = 100 A/
di/dt = 200 A/
10
T
T
C = 25oC
C = 175oC
di/dt = 100 A/
80
ms
1
0
0
1
2
3
0
40
120
160
Forward Voltage, V F [V]
Forward Current, IF [A]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
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6
FGY100T65SCDT
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
400
320
240
160
80
3500
TC = 25oC
C = 175oC ---
TC = 25oC
C = 175oC −−−
T
T
2800
2100
1400
700
0
di/dt = 100 A/ms
ms
di/dt = 200 A/
ms
di/dt = 200 A/
ms
di/dt = 100 A/
0
0
40
80
120
160
0
40
80
120
160
Forward Current, IF [A]
Forward Current, IF [A]
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
0.4
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
t2
0.01
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.003
10−5
10−4
10−3
10−2
10−1
100
Rectangular Pulse Duration [sec]
Figure 21. Transient Thermal Impedance of IGBT
0.4
0.1
0.5
0.2
0.1
PDM
0.05
t1
0.02
t2
0.01
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
10−5
10−4
10−3
10−2
10−1
100
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CD
ISSUE A
DATE 18 SEP 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
= Pb−Free Package
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13857G
TO−247−3LD
PAGE 1 OF 1
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