MJW18020 [ONSEMI]
NPN Silicon Power Transistors High Voltage Planar; NPN硅功率晶体管高压平面
| 型号： | MJW18020 |
| 厂家： | 
ONSEMI |
| 描述： | NPN Silicon Power Transistors High Voltage Planar |
| 文件： | 总8页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJW18020
Preferred Devices
NPN Silicon Power
Transistors High Voltage
Planar
The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.
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30 AMPERES
1000 VOLTS BVCES
450 VOLTS BVCEO
250 WATTS
Mains features include:
• High and Excellent Gain Linearity
• Fast and Very Tight Switching Times Parameters t and t
si
fi
• Very Stable Leakage Current due to the Planar Structure
• High Reliability
1
2
3
TO–247
CASE 340K
STYLE 3
MAXIMUM RATINGS
Rating
Symbol
Value
450
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Base Voltage
V
CEO
V
1000
1000
9.0
MARKING DIAGRAM
CES
CBO
EBO
V
V
Emitter–Base Voltage
MJW
18020
LLYWW
Collector Current – Continuous
– Peak (Note 1.)
I
C
30
45
Base Current – Continuous
– Peak (Note 1.)
I
6.0
10
Adc
B
1 BASE
2 COLLECTOR
MJW18020= Device Code
3 EMITTER
Total Power Dissipation @ T = 25_C
P
250
2.0
Watts
W/_C
_C
C
D
Derate Above 25_C
Operating and Storage Junction
Temperature Range
T , T
–65 to
+150
J
stg
LL
Y
= Location Code
= Year
THERMAL CHARACTERISTICS
Characteristic
WW
= Work Week
Symbol
Max
Unit
Thermal Resistance,
Junction–to–Case
R
0.5
_C/W
θ
JC
ORDERING INFORMATION
Thermal Resistance,
Junction–to–Ambient
R
50
_C/W
_C
θ
JA
Device
MJW18020
Package
Shipping
30 Units/Rail
TO–247
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
T
275
L
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
January, 2002 – Rev. 0
MJW180203/D
MJW18020
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
V
450
–
–
–
–
–
Vdc
µAdc
µAdc
CEO(sus)
C
B
Collector Cutoff Current
(V = Rated V , I = 0)
I
100
CEO
CE
CEO
B
Collector Cutoff Current (V = Rated V
, V = 0)
EB
I
–
100
500
CE
CES
CES
(T = 125°C)
C
Emitter Cutoff Current
I
–
–
100
µAdc
EBO
(V = 9 Vdc, I = 0)
CE
C
ON CHARACTERISTICS
DC Current Gain (I = 3 Adc, V = 5 Vdc)
h
FE
14
–
8
5
5.5
4
34
–
C
CE
(T = 125°C)
30
16
14
9
7
25
C
(I = 10 Adc V = 2 Vdc)
C
CE
(T = 125°C)
C
–
–
–
–
(I = 20 Adc V = 2 Vdc)
C
CE
(T = 125°C)
C
(I = 10 mAdc V = 5 Vdc)
14
C
CE
Base–Emitter Saturation Voltage (I = 10 Adc, I = 2 Adc)
V
–
0.97
1.15
1.25
1.5
Vdc
Vdc
C
B
BE(sat)
(I = 20 Adc, I = 4 Adc)
C
B
Collector–Emitter Saturation Voltage
(I = 10 Adc, I = 2 Adc)
V
CE(sat)
–
–
–
–
0.2
0.3
0.5
0.9
0.6
–
1.5
2.0
C
B
(T = 125°C)
C
(I = 20 Adc, I = 4 Adc)
C
B
(T = 125°C)
C
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
f
–
–
–
13
–
MHz
pF
T
(I = 1 Adc, V = 10 Vdc, f = 1 MHz)
test
C
CE
Output Capacitance
C
300
500
9000
ob
(V = 10 Vdc, I = 0, f = 1 MHz)
test
CB
E
Input Capacitance
C
7000
pF
ib
(V = 8.0)
EB
SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 µs)
Turn–On Time
(I = 10 Adc, I = I = 2 Adc,
t
On
–
540
750
ns
C
B1
B2
Vcc = 125 V)
Storage Time
Fall Time
t
–
–
–
–
–
–
–
4.75
380
5.2
6
500
6.5
1200
3.5
500
4
µs
ns
µs
ns
µs
ns
µs
s
t
f
Turn–Off Time
Turn–On Time
Storage Time
Fall Time
t
t
Off
On
(I = 20 Adc, I = I = 4 Adc,
965
2.9
C
B1
B2
Vcc = 125 V)
t
s
t
350
3.25
f
Turn–Off Time
t
Off
SWITCHING CHARACTERISTICS: Inductive Load (V
= 300 V , Vcc = 15 V, L = 200 µH)
clamp
Fall Time
(I = 10 Adc, I = I = 2 Adc)
–
–
–
–
–
–
142
4.75
320
350
3.0
250
6
ns
µs
ns
ns
µs
ns
C
B1
B2
t
fi
Storage Time
Crossover Time
Fall Time
t
si
500
500
3.5
750
t
c
(I = 20 Adc, I = I = 4 Adc)
C
B1
B2
t
fi
Storage Time
Crossover Time
t
si
500
t
c
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2
MJW18020
TYPICAL CHARACTERISTICS
100
100
T = 25°C
J
T
J
= 25°C
T
= 125°C
= –20°C
J
T
= 125°C
= –20°C
= 5.0 V
J
T
J
T
J
10
10
V
= 2.0 V
V
CE
CE
1.0
0.01
1.0
0.01
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain, VCE = 2.0 V
Figure 2. DC Current Gain, VCE = 5.0 V
100.0
100.0
I /I = 5.0
I /I = 10
c b
c
b
10.0
1.0
10.0
1.0
T
J
= –20°C
T
J
= –20°C
T
J
= 125°C
T
J
= 125°C
0.1
0.0
0.1
0.0
T
J
= 25°C
T
J
= 25°C
0.001
0.01
0.1
1.0
10
100
0.001
0.01
0.1
1.0
10
100
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Typical Collector–Emitter Saturation
Voltage, IC/IB = 5.0
Figure 4. Typical Collector–Emitter Saturation
Voltage, IC/IB = 10
10.0
10.0
I /I = 5.0
I /I = 10
c
b
c
b
T
J
= –20°C
T = –20°C
J
T
= 25°C
T
= 25°C
J
J
1.0
0.1
1.0
0.1
T
J
= 125°C
T = 125°C
J
0.001
0.01
0.1
1.0
10
100
0.001
0.01
0.1
1.0
10
100
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Typical Base–Emitter Saturation
Voltage, IC/IB = 5.0
Figure 6. Typical Base–Emitter Saturation
Voltage, IC/IB = 10
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3
MJW18020
TYPICAL CHARACTERISTICS
100000
10000
1000
100.00
1.0 ms
Extended SOA
DC
10.00
10 ms
5 ms
C
ib
1 ms
1.00
0.10
0.01
C
ob
100
1
10
100
10
100
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
CE
CE
Figure 7. Typical Capacitance
Figure 8. Forward Bias Safe Operating Area
40
30
20
10
T
v 125°C
b
= 500 mH
C
I /I > 4
c
L
C
–1.5 V
–5 V
800
V
= 0 V
BE
0
0
200
400
600
1000
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. Reverse Bias Safe Operating Area
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4
MJW18020
PACKAGE DIMENSIONS
TO–247
CASE 340K–01
ISSUE C
–T–
E
–Q–
NOTES:
M
M
0.25 (0.010)
T B
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
–B–
C
4
U
L
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.799
0.626
0.209
0.055
A
B
C
D
E
F
19.7
15.3
4.7
20.3 0.776
15.9 0.602
5.3 0.185
1.4 0.039
A
K
R
1.0
1
2
3
1.27 REF
2.0
5.5 BSC
0.050 REF
2.4 0.079
0.094
G
H
J
0.216 BSC
–Y–
2.2
0.4
2.6 0.087
0.8 0.016
14.8 0.559
0.102
0.031
0.583
P
K
L
14.2
5.5 NOM
0.217 NOM
P
Q
R
U
V
3.7
3.55
4.3 0.146
3.65 0.140
0.169
0.144
V
H
5.0 NOM
5.5 BSC
3.0
0.197 NOM
0.217 BSC
0.118 0.134
F
J
G
3.4
D
M
S
Y Q
0.25 (0.010)
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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5
MJW18020
Notes
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6
MJW18020
Notes
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7
MJW18020
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MJW18020/D
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