MJW21191 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | MJW21191 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJW21191
DESCRIPTION
·With TO-247 package
·Complement to type MJW21192
·Wild area of safe operation
APPLICATIONS
·Designed for power audio output, high
power drivers in audio amplifiers
PINNING
PIN
DESCRIPTION
1
Emitter
Collector
Base
2
3
ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
MAX
-150
-150
-5
UNIT
V
Open base
V
Open collector
V
-8
A
ICM
Collector current-peak
Base current
-16
A
IB
-2
A
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
100
W
ꢀ
-65~150
-65~150
Tj
ꢀ
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Thermal resistance from junction to case
0.65
ꢀ/W
Rth j-C
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJW21191
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=-10mA ;IB=0
Collector-emitter saturation voltage IC=-4A; IB=-0.4A
Collector-emitter saturation voltage IC=-8A; IB=-1.6A
-150
-1.0
-2.0
-2.0
-10
V
-1
(sat)
V
VCE
-2
(sat)
VBE(ON)
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-4A ; VCE=-2V
VCB=-150V; IE=0
V
ICES
µA
µA
IEBO
hFE-1
hFE-2
fT
VEB=-5V; IC=0
-10
IC=-4A ; VCE=-2V
IC=-8A ; VCE=-2V
IC=-1.0A ; VCE=-10V,f=1MHz
15
5
100
DC current gain
Transition frequency
4.0
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJW21191
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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