MJW21191G [ONSEMI]
8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W; 8.0 A功率晶体管互补硅150伏， 125瓦
| 型号： | MJW21191G |
| 厂家： | 
ONSEMI |
| 描述： | 8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W |
| 文件： | 总6页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJW21192 (NPN),
MJW21191 (PNP)
Complementary Silicon
Plastic Power Transistors
Specifically designed for power audio output, or high power drivers
in audio amplifiers.
• DC Current Gain Specified up to 8.0 A at Temperature
• All On Characteristics at Temperature
• High SOA: 20 A, 18 V, 100 ms
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8.0 A
• TO−247AE Package
POWER TRANSISTORS
COMPLEMENTARY SILICON
150 V, 125 W
• Pb−Free Packages are Available*
MAXIMUM RATINGS
MJW21191
MJW21192
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
V
150
CEO
V
150
CB
EB
TO−247
CASE 340L
STYLE 3
V
5.0
Collector Current − Continuous
− Peak
I
8.0
16
C
Base Current
I
2.0
Adc
B
1
2
3
Total Power Dissipation @ T = 25_C
P
125
0.65
W
C
D
Derate above 25_C
W/_C
MARKING DIAGRAM
Operating and Storage Junction
Temperature Range
T , T
–65 to
+150
_C
J
stg
THERMAL CHARACTERISTICS
Characteristic
MJW2119x
AYWWG
Symbol
Max
1.0
50
Unit
_C/W
_C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
q
JC
R
q
JA
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1 BASE
3 EMITTER
2 COLLECTOR
x
= 1 or 2
A
Y
= Assembly Location
= Year
1000
WW = Work Week
PNP
G
= Pb−Free Package
NPN
100
ORDERING INFORMATION
Device
MJW21191
MJW21191G
Package
Shipping
30 Units/Rail
30 Units/Rail
TO−247
10
TO−247
(Pb−Free)
MJW21192
TO−247
30 Units/Rail
30 Units/Rail
1.0
1.0
10
V , REVERSE VOLTAGE (V)
100
1000
MJW21192G
TO−247
(Pb−Free)
R
Figure 1. Typical Capacitance @ 25°C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
June, 2005 − Rev. 2
MJW21192/D
MJW21192 (NPN), MJW21191 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I = 10 mAdc, I = 0)
V
Vdc
mAdc
mAdc
CEO(sus)
C
B
150
−
Collector Cutoff Current
(V = 250 Vdc, I = 0)
I
CES
CB
E
−
−
10
10
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
EBO
BE
C
ON CHARACTERISTICS (Note 1)
DC Current Gain
h
FE
−
(I = 4.0 Adc, V = 2.0 Vdc)
C
CE
15
5.0
100
−
(I = 8.0 Adc, V = 2.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 4.0 Adc, I = 0.4 Adc)
V
Vdc
Vdc
CE(sat)
−
−
1.0
2.0
C
B
(I = 8.0 Adc, I = 1.6 Adc)
C
B
Base−Emitter On Voltage
(I = 4.0 Adc, V = 2.0 Vdc)
V
−
2.0
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
f
4.0
−
MHz
T
(I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz)
test
C
CE
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. f = ⎪h ⎪• f .
test
T
fe
1.0
DUTY
CYCLE,
D = t /t
D = 0.5
P
1
2
(pk)
0.2
0.1
t
1
t
2
0.1
Z
= r(t) R
θ
θ
θ
JC(t)
JC
0.05
R
= 1.65°C/W MAX
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.02
0.01
1
T
− T = P
C
Z
θ
J(pk)
(pk) JC(t)
0.01
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (s)
Figure 2. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
The data of Figures 3 and 4 is based on T
T is variable depending on conditions. Second breakdown
C
= 150_C;
J(pk)
breakdown. Safe operating area curves indicate I − V
pulse limits are valid for duty cycles to 10% provided T
J(pk)
C
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
< 150_C.
T
may be calculated from the data in
J(pk)
Figure 2. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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2
MJW21192 (NPN), MJW21191 (PNP)
NPN — MJW21192
PNP — MJW21191
100
100
10
10 ms
10ꢀms
100 ms
100 ms
10
250 ms
250ꢀms
1.0
0.1
1.0
0.1
1.0
10
100
1000
1.0
10
100
1000
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 4. PNP — MJW21191
Safe Operating Area
Figure 3. NPN — MJW21192
Safe Operating Area
TYPICAL CHARACTERISTICS
NPN — MJW21192
PNP — MJW21191
1000
100
1000
100
50°C
100°C
25°C
50°C
100°C
25°C
10
10
1.0
1.0
0.01
0.1
1.0
10
100
0.01
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 6. PNP — MJW21191
Figure 5. NPN — MJW21192
VCE = 2.0 V DC Current Gain
VCE = 2.0 V DC Current Gain
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3
MJW21192 (NPN), MJW21191 (PNP)
NPN — MJW21192
PNP — MJW21191
1000
100
1000
50°C
50°C
100°C
100°C
100
25°C
25°C
10
10
1.0
1.0
0.01
0.1
1.0
10
100
0.01
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 8. PNP — MJW21191
Figure 7. NPN — MJW21192
VCE = 5.0 V DC Current Gain
VCE = 5.0 V DC Current Gain
1.0
1.0
100°C
25°C
0.1
0.1
100°C
25°C
0.01
0.01
0.1
1.0
10
0.1
1.0
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. NPN — MJW21192
Figure 10. PNP — MJW21191
VCE(sat) IC/IB = 5.0
VCE(sat) IC/IB = 5.0
1.0
10
100°C
25°C
1.0
0.1
0.1
100°C
25°C
0.01
0.01
0.1
1.0
10
0.1
1.0
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. NPN — MJW21192
Figure 12. PNP — MJW21191
VCE(sat) IC/IB = 10
VCE(sat) IC/IB = 10
SPACE
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4
MJW21192 (NPN), MJW21191 (PNP)
NPN — MJW21192
PNP — MJW21191
10
10
1.0
1.0
50°C
25°C
50°C
25°C
100°C
100°C
0.1
0.1
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 14. PNP — MJW21191
Figure 13. NPN — MJW21192
VCE = 2.0 V VBE(on) Curve
VCE = 2.0 V VBE(on) Curve
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5
MJW21192 (NPN), MJW21191 (PNP)
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE D
NOTES:
−T−
C
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−B−
E
MILLIMETERS
INCHES
U
DIM MIN
MAX
21.08
16.26
5.30
MIN
MAX
8.30
L
A
B
C
D
E
F
20.32
15.75
4.70
1.00
2.20
1.65
0.800
0.620
0.185
0.040
0.087
0.065
N
4
0.640
0.209
0.055
0.102
0.084
A
K
−Q−
1.40
2.60
M
M
T B
0.63 (0.025)
1
2
3
2.13
G
H
J
5.45 BSC
0.215 BSC
1.50
0.40
20.06
5.40
4.32
−−−
2.49
0.80
20.83
6.20
5.49
4.50
3.65
0.059
0.016
0.790
0.212
0.170
0.098
0.031
0.820
0.244
0.216
P
−Y−
K
L
N
P
Q
U
W
−−− 0.177
0.140 0.144
0.242 BSC
0.113 0.123
3.55
6.15 BSC
2.87
3.12
W
J
F 2 PL
STYLE 3:
PIN 1. BASE
H
G
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D3 PL
M
S
Y Q
0.25 (0.010)
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MJW21192/D
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