NGB15N41ACL [ONSEMI]
Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220; 点火IGBT 15 A， 410 V N.Channel DPAK ， D2PAK和TO.220
| 型号： | NGB15N41ACL |
| 厂家： | 
ONSEMI |
| 描述： | Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220 |
| 文件： | 总11页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGD15N41CL,
NGD15N41ACL,
NGB15N41CL,
NGB15N41ACL,
NGP15N41CL,
NGP15N41ACL
http://onsemi.com
Ignition IGBT 15 A, 410 V
15 AMPS
410 VOLTS
N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
C
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate−Emitter ESD Protection
R
G
G
R
GE
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
E
4
DPAK
CASE 369C
STYLE 2
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
2
1
3
• Low Saturation Voltage
• High Pulsed Current Capability
2
4
D PAK
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R
)
G
GE
CASE 418B
STYLE 4
• These are Pb−Free Devices
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
3
J
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol Value
Unit
4
V
V
440
440
15
V
DC
V
DC
V
DC
CES
CER
V
GE
TO−220AB
CASE 221A
STYLE 9
Collector Current−Continuous
I
C
15
50
A
DC
A
AC
@ T = 25°C − Pulsed
C
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
ESD
kV
8.0
1
2
3
ESD (Machine Model) R = 0 Ω, C = 200 pF
800
V
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
107
0.71
Watts
W/°C
C
D
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
Operating and Storage Temperature Range
T , T
J
−55 to
°C
stg
+175
DEVICE MARKING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
See general marking information in the device marking
section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
December, 2011 − Rev. 8
NGD15N41CL/D
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T ≤ 175°C)
J
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
E
AS
mJ
V
CC
V
CC
= 50 V, V = 5.0 V, Pk I = 16.6 A, L = 1.8 mH, Starting T = 25°C
250
200
GE
L
J
= 50 V, V = 5.0 V, Pk I = 15 A, L = 1.8 mH, Starting T = 125°C
GE
L
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
1.4
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θ
JC
R
θ
JA
R
θ
JA
R
θ
JA
L
°C/W
DPAK (Note 1)
100
50
2
D PAK (Note 1)
TO−220
62.5
275
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
T
°C
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BV
I
C
= 2.0 mA
= 10 mA
T = −40°C to
380
380
410
410
440
440
V
DC
CES
J
150°C
I
C
T = −40°C to
J
150°C
T = 25°C
−
−
2.0
10
1.0
0.7
12
0.1
33
36
31
13
20
40*
10
Zero Gate Voltage Collector Current
I
μA
DC
J
CES
V
V
= 350 V,
CE
T = 150°C
J
= 0 V
GE
T = −40°C
J
−
T = 25°C
J
−
2.0
25*
1.0
37
Reverse Collector−Emitter Leakage Current
Reverse Collector−Emitter Clamp Voltage
I
mA
ECS
V
= −24 V
CE
T = 150°C
J
−
T = −40°C
J
−
T = 25°C
J
27
30
25
11
B
V
V
VCES(R)
DC
I
C
= −75 mA
T = 150°C
J
40
T = −40°C
J
35
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor
BV
I
G
= 5.0 mA
T = −40°C to
15
GES
J
DC
150°C
I
V
= 10 V
T = −40°C to
384
−
640
70
1000
−
μA
DC
GES
GE
J
150°C
R
−
−
T = −40°C to
Ω
G
J
150°C
Gate Emitter Resistor
R
T = −40°C to
J
10
16
26
Ω
k
GE
150°C
ON CHARACTERISTICS (Note 2)
T = 25°C
1.1
0.75
1.2
−
1.4
1.0
1.6
3.4
1.9
1.4
2.1*
−
Gate Threshold Voltage
V
V
DC
J
GE(th)
I
= 1.0 mA,
C
V
T = 150°C
J
= V
GE
CE
T = −40°C
J
Threshold Temperature Coefficient
(Negative)
−
−
−
mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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2
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (continued) (Note 3)
T = 25°C
1.0
0.9
1.1
1.3
1.2
1.4
1.4
1.5
1.4
1.3
1.3
1.4
8.0
1.6
1.5
1.65
1.8
1.7
1.8
2.0
2.0
2.0
1.9
1.9
1.95
15
1.8
1.8
Collector−to−Emitter On−Voltage
V
V
J
CE(on)
DC
I
V
= 6.0 A,
C
T = 150°C
J
= 4.0 V
GE
T = −40°C
J
1.9*
2.0*
1.9
T = 25°C
J
I
C
= 8.0 A,
T = 150°C
J
V
= 4.0 V
GE
T = −40°C
J
2.0*
2.2
T = 25°C
J
I
V
= 10 A,
C
T = 150°C
J
2.3*
2.2
= 4.0 V
GE
T = −40°C
J
T = 25°C
J
2.1
I
V
= 10 A,
C
T = 150°C
J
2.1
= 4.5 V
GE
T = −40°C
J
2.1*
25
Forward Transconductance
gfs
V
= 5.0 V, I = 6.0 A
T = −40°C to
Mhos
pF
CE
C
J
150°C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
400
30
650
55
1000
100
8.0
ISS
V
= 25 V, V = 0 V
f = 1.0 MHz
T = −40°C to
CC
GE
J
Output Capacitance
C
C
OSS
RSS
150°C
Transfer Capacitance
3.0
4.5
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Inductive)
T = 25°C
−
−
−
−
−
−
−
−
−
−
−
−
4.0
4.5
6.0
10
10
10
12
12
10
10
15
15
4.0
4.0
7.0
7.0
t
V
= 300 V, I = 6.5 A
= 1.0 kΩ, L = 300 μH
μSec
μSec
μSec
J
d(off)
CC
C
R
G
T = 150°C
J
T = 25°C
J
Fall Time (Inductive)
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−On Delay Time
Rise Time
t
f
V
CC
= 300 V, I = 6.5 A
C
R
= 1.0 kΩ, L = 300 μH
G
T = 150°C
J
T = 25°C
J
3.0
3.5
8.0
12
t
t
V
CC
= 300 V, I = 6.5 A
d(off)
C
R
= 1.0 kΩ, R = 46 Ω,
G
L
T = 150°C
J
T = 25°C
J
t
f
V
CC
= 300 V, I = 6.5 A
C
R
= 1.0 kΩ, R = 46 Ω,
G
G
G
L
T = 150°C
J
T = 25°C
J
0.7
0.7
4.0
5.0
V
R
= 10 V, I = 6.5 A
d(on)
CC
C
= 1.0 kΩ, R = 1.5 Ω
L
T = 150°C
J
T = 25°C
J
t
r
V
R
= 10 V, I = 6.5 A
CC
C
= 1.0 kΩ, R = 1.5 Ω
L
T = 150°C
J
3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
50
40
30
20
10
0
60
V
= 10 V
V
= 10 V
5 V
GE
GE
5 V
4.5 V
50
40
30
20
10
0
4.5 V
4 V
4 V
3.5 V
T = 25°C
T = −40°C
J
J
3.5 V
3 V
3 V
2.5 V
7
2.5 V
7
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
30
60
50
40
30
20
10
0
V
CE
= 10 V
V
GE
= 10 V
25
20
15
10
5 V
4.5 V
T = 150°C
J
4 V
3.5 V
3 V
T = 25°C
J
2.5 V
5
0
T = 150°C
J
T = −40°C
J
0
0.5
V
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
, GATE TO EMITTER VOLTAGE (VOLTS)
GE
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
4.0
3.5
3
V
GE
= 5 V
T = 25°C
J
I
C
= 25 A
2.5
I
C
= 15 A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 20 A
= 15 A
= 10 A
C
I
= 10 A
C
2
1.5
1
I
C
I
= 5 A
C
I
C
I
= 5 A
C
0.5
0
−50
−25
0
25
50
75
100
125 150
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
GATE TO EMITTER VOLTAGE (VOLTS)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
10000
3
2.5
2
T = 150°C
J
I
= 15 A
C
C
1000
100
10
iss
I
= 10 A
= 5 A
C
C
oss
I
C
1.5
1
C
rss
1
0
0.5
0
0
20
40 60 80 100 120 140 160 180 200
3
4
5
6
7
8
9
10
GATE TO EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
Figure 8. Capacitance Variation
30
25
20
15
10
5
2
V
V
R
= 50 V
= 5 V
= 1000 Ω
1.8
1.6
1.4
1.2
CC
Mean
Mean + 4 σ
Mean − 4 σ
GE
G
L = 2 mH
L = 3 mH
1
0.8
0.6
0.4
L = 6 mH
0.2
0
0
−50 −30 −10 10
30 50 70 90 110 130 150
−50 −25
0
25
50
75 100 125 150 175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
12
10
8
30
25
20
15
10
5
V
V
R
= 300 V
= 5 V
= 1000 Ω
V
V
R
= 50 V
= 5 V
= 1000 Ω
CC
CC
GE
GE
G
G
I
C
= 10 A
L = 2 mH
t
L = 300 μH
f
6
4
2
0
L = 3 mH
L = 6 mH
t
d(off)
0
−50 −25
0
25
50
75 100 125 150 175
−50 −30 −10
10
30
50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
Figure 12. Inductive Switching Fall Time
versus Temperature
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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
10
Duty Cycle = 0.5
0.2
0.1
1
0.05
0.02
0.01
0.1
D CURVES APPLY FOR POWER
P
(pk)
PULSE TRAIN SHOWN
READ TIME AT T
1
Single Pulse
t
1
t
2
T
J(pk)
− T = P
R
θ
JA
(t)
A
(pk)
R
≅ R(t) for t ≤ 0.2 s
θ
JC
DUTY CYCLE, D = t /t
1
2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t,TIME (S)
Figure 13. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on
fixture in Figure 14)
1.5″
4″
4″
0.125″
4″
Figure 14. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8, thick aluminum)
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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
100
10
100
DC
10
DC
100 μs
1 ms
100 μs
1
1
0.1
10 ms
1 ms
100 ms
100
10 ms
0.1
100 ms
0.01
0.01
1
10
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 15. Single Pulse Safe Operating Area
Figure 16. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 255C)
(Mounted on an Infinite Heatsink at TA = 1255C)
100
10
100
10
t = 1 ms, D = 0.05
1
t = 1 ms, D = 0.05
1
t = 2 ms, D = 0.10
1
t = 2 ms, D = 0.10
1
t = 3 ms, D = 0.30
1
t = 3 ms, D = 0.30
1
1
1
I
(pk)
I
(pk)
t
1
t
1
0.1
0.1
t
2
t
2
DUTY CYCLE, D = t /t
DUTY CYCLE, D = t /t
1
2
1
2
0.01
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 17. Pulse Train Safe Operating Area
Figure 18. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
(Mounted on an Infinite Heatsink at TC = 1255C)
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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
ORDERING INFORMATION
†
Device
Package Type
Shipping
NGD15N41CLT4G
NGD15N41ACLT4G
NGB15N41CLT4G
NGB15N41ACLT4G
NGP15N41CLG
DPAK
2500/Tape & Reel
(Pb−Free)
2
D PAK
800/Tape & Reel
50 Units/Rail
(Pb−Free)
TO−220
(Pb−Free)
NGP15N41ACLG
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
MARKING DIAGRAMS
2
DPAK
CASE 369C
STYLE 7
D PAK
CASE 418B
STYLE 4
TO−220AB
CASE 221A
STYLE 9
4
Collector
4
Collector
1
Gate
YWW
GD
15N41G
NGB
15N41CLG
AYWW
4
NGP
15N41CLG
AYWW
2
Collector
Collector
3
1
Gate
3
1
Gate
3
Emitter
Emitter
Emitter
2
Collector
2
Collector
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Device
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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
C
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: INCHES.
A
E
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
c2
H
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
b3
B
4
2
L3
L4
Z
D
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
b2 0.030 0.045
b3 0.180 0.215
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
3.00
0.244
0.118
2.58
0.102
5.80
1.60
0.063
6.17
0.228
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
C
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
3. 418B−01 THRU 418B−03 OBSOLETE,
V
W
NEW STANDARD 418B−04.
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
K
L
J
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
D 3 PL
M
M
T B
0.13 (0.005)
STYLE 4:
PIN 1. GATE
2. COLLECTOR
VARIABLE
CONFIGURATION
ZONE
3. EMITTER
4. COLLECTOR
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W−W
VIEW W−W
VIEW W−W
1
2
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.25X04
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
10
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN
MILLIMETERS
4
MAX
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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