NSS12200LT1G_09 [ONSEMI]
12 V, 4.0 A, Low VCE(sat) PNP Transistor; 12 V , 4.0 A,低VCE ( sat)的PNP晶体管型号: | NSS12200LT1G_09 |
厂家: | ONSEMI |
描述: | 12 V, 4.0 A, Low VCE(sat) PNP Transistor |
文件: | 总5页 (文件大小:120K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NSS12200LT1G
12 V, 4.0 A, Low VCE(sat)
PNP Transistor
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
CE(sat)
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
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Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
−12 VOLTS
4.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 65 mW
COLLECTOR
3
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
MAXIMUM RATINGS (T = 25°C)
A
EMITTER
Rating
Symbol
Max
−12
Unit
Vdc
Vdc
Vdc
A
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
3
−12
1
V
EBO
−7.0
−2.0
−4.0
2
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
I
C
SOT−23 (TO−236)
CASE 318
I
A
CM
STYLE 6
ESD
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
Total Device Dissipation
P
(Note 1)
460
mW
VE M G
D
T = 25°C
G
A
Derate above 25°C
3.7
mW/°C
°C/W
1
Thermal Resistance,
R
q
(Note 1)
270
JA
Junction−to−Ambient
VE = Specific Device Code
Total Device Dissipation
P
(Note 2)
540
mW
M
G
= Date Code*
= Pb−Free Package
D
T = 25°C
A
Derate above 25°C
4.3
mW/°C
°C/W
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Thermal Resistance,
R
q
(Note 2)
230
JA
Junction−to−Ambient
Total Device Dissipation
(Single Pulse < 10 sec.)
P
710
mW
Dsingle
(Note 3)
ORDERING INFORMATION
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
†
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NSS12200LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2
1. FR−4 @ 100 mm , 1 oz. copper traces.
2
2. FR−4 @ 500 mm , 1 oz. copper traces.
3. Thermal response.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 3
NSS12200L/D
NSS12200LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = −10 mAdc, I = 0)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
−12
−12
−7.0
−
−
−
−
−
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = −0.1 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = −0.1 mAdc, I = 0)
Vdc
−
E
C
Collector Cutoff Current
(V = −12 Vdc, I = 0)
I
mAdc
mAdc
CBO
−0.1
−0.1
CB
E
Emitter Cutoff Current
(V = −7.0 Vdc)
EB
I
EBO
−
ON CHARACTERISTICS
DC Current Gain (Note 4)
h
FE
(I = −10 mA, V = −2.0 V)
250
250
200
150
−
300
−
−
−
−
−
C
CE
(I = −500 mA, V = −2.0 V)
C
CE
(I = −1.0 A, V = −2.0 V)
C
CE
(I = −2.0 A, V = −2.0 V)
−
C
CE
Collector−Emitter Saturation Voltage (Note 4)
(I = −0.1 A, I = −0.010 A) (Note 5)
V
V
CE(sat)
−
−
−
−
−0.008
−0.065
−0.100
−0.130
−0.011
−0.090
−0.120
−0.180
C
B
(I = −1.0 A, I = −0.100 A)
C
B
(I = −1.0 A, I = −0.010 A)
C
B
(I = −2.0 A, I = −0.200 A)
C
B
Base−Emitter Saturation Voltage (Note 4)
(I = −1.0 A, I = −0.01 A)
V
V
V
BE(sat)
−
−
−
−
−0.900
−0.900
C
B
Base−Emitter Turn−on Voltage (Note 4)
(I = −1.0 A, V = −2.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I = −100 mA, V = −5.0 V, f = 100 MHz)
f
MHz
T
100
−
−
−
−
−
C
CE
Input Capacitance (V = −0.5 V, f = 1.0 MHz)
Cibo
350
120
pF
pF
EB
Output Capacitance (V = −3.0 V, f = 1.0 MHz)
Cobo
−
CB
SWITCHING CHARACTERISTICS
Delay (V = −10 V, I = 750 mA, I = 15 mA)
t
−
−
−
−
−
−
−
−
60
ns
ns
ns
ns
CC
C
B1
d
Rise (V = −10 V, I = 750 mA, I = 15 mA)
t
120
250
130
CC
C
B1
r
Storage (V = −10 V, I = 750 mA, I = 15 mA)
t
CC
C
B1
s
Fall (V = −10 V, I = 750 mA, I = 15 mA)
t
f
CC
C
B1
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
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2
NSS12200LT1G
0.25
0.2
0.35
V
= 150°C
CE(sat)
V
= 150°C
−55°C
IC/IB = 100
CE(sat)
IC/IB = 10
0.3
0.25
0.2
25°C
0.15
0.1
25°C
0.15
0.1
−55°C
0.05
0
0.05
0
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
800
1.1
1.0
0.9
0.8
0.7
0.6
0.5
150°C (5.0 V)
150°C (2.0 V)
750
700
650
600
550
500
450
400
350
300
250
200
IC/IB = 10
−55°C
25°C
25°C (5.0 V)
25°C (2.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
150°C
0.4
0.3
150
100
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
1.0
0.8
0.6
0.4
10 mA
V
CE
= −2.0 V
V
CE
(V) I = 500 mA
C
−55°C
25°C
0.8
0.7
100 mA
300 mA
0.6
0.5
0.4
150°C
0.3
0.2
0
0.2
0.1
0.001
0.01
0.1
1.0
10
0.01
0.1
1.0
10
100
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn−On Voltage vs.
Figure 6. Saturation Region
Collector Current
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3
NSS12200LT1G
375
350
200
C
obo
(pF)
C
ibo
(pF)
175
150
125
325
300
275
250
225
200
175
100
75
150
125
0
1.0
2.0
3.0
4.0
5.0
6.0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
V , EMITTER BASE VOLTAGE (V)
EB
V , COLLECTOR BASE VOLTAGE (V)
CB
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1 ms
1.0
10 ms
100 ms
1 s
0.1
Thermal Limit
0.01
0.01
0.1
1.0
(V
10
100
V
)
dc
CE
Figure 9. Safe Operating Area
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4
NSS12200LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
D
SEE VIEW C
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
H
E
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
c
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
1
2
b
0.25
e
q
A
H
E
L
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A1
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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NSS12200L/D
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