NST846MTWFTBG [ONSEMI]
General Purpose TransistorsNPN, 65 V, 100 mA;型号: | NST846MTWFTBG |
厂家: | ONSEMI |
描述: | General Purpose TransistorsNPN, 65 V, 100 mA |
文件: | 总7页 (文件大小:258K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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COLLECTOR
General Purpose
Transistors
NPN, 65 V, 100 mA
3
1
BASE
2
EMITTER
NST846MTWFT
The NST846MTWFT is designed for general purpose amplifier
applications. It is housed in an ultra−compact DFN1010−3 with
wettable flanks, recommended for the automotive industry’s optical
inspection methods. The transistor is ideal for low−power surface
mount applications where board space and reliability are at a premium.
3
MARKING
DIAGRAM
46M
1
2
Features
XDFNW3
CASE 521AC
• Wettable Flank Package for Optimal Automated Optical
Inspection (AOI)
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
46
M
= Specific Device Code
= Month Code
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
ORDERING INFORMATION
Compliant
†
Device
Package
Shipping
NST846MTWFTBG
XDFNW3
(Pb−Free)
3000 / Tape &
Reel
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
65
Unit
Vdc
Vdc
Vdc
mA
NSVT846MTWFTBG
XDFNW3
(Pb−Free)
3000 / Tape &
Reel
V
CEO
V
CBO
V
EBO
80
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5.0
100
200
Collector Current − Continuous
Collector Current − Peak
I
C
I
mA
CM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction−to−Ambient
(Note 1)
R
220
°C/W
q
JA
Total Power Dissipation per Device
P
D
570
mW
@T = 25°C
(Note 1)
A
Junction and Storage Temperature Range
T , T
−65 to
+150
°C
J
stg
1. Per JESD51−7 with standard PCB footprint and 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
February, 2023 − Rev. 1
NST846MTWFT/D
NST846MTWFT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = 10 mA)
V
65
80
80
6.0
−
−
−
−
−
−
−
−
V
V
V
V
C
(BR)CEO
Collector−Emitter Breakdown Voltage (I = 10 mA, V = 0)
V
C
EB
(BR)CES
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = 10 mA)
V
V
C
Emitter−Base Breakdown Voltage (I = 0.1 mA, I = 0)
E
C
Collector Cutoff Current
(V = 30 V)
I
CBO
−
−
−
−
15.0
5.0
nA
mA
CB
(V = 30 V, T = 150°C)
CB
A
Emitter−Base Cutoff Current (V = 6 V, I = 0)
I
EBO
−
−
0.1
mA
BE
C
ON CHARACTERISTICS
DC Current Gain
(Note 2)
(Note 2)
(Note 2)
(Note 2)
h
FE
(I = 10 mA, V = 5.0 V)
−
220
150
290
−
450
C
CE
(I = 2.0 mA, V = 5.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
V
V
V
CE(sat)
−
−
−
−
0.25
0.60
C
B
(I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
BE(sat)
−
−
0.7
0.9
−
−
C
B
B (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Turn−on Voltage
(I = 2.0 mA, V = 5.0 V)
V
BE(on)
0.6
−
−
−
0.75
0.82
C
CE
B (I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Transition Frequency
f
100
−
−
−
3.0
−
MHz
pF
T
(I = 10 mA, V = 5.0 V, f = 100 MHz)
C
CE
Output Capacitance
(V = 10 V, f = 1.0 MHz)
CB
C
1.0
1.0
obo
Noise Figure
NF
−
dB
(I = 0.2 mA, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
C
CE
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
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2
NST846MTWFT
TYPICAL CHARACTERISTICS
500
450
400
350
300
250
200
500
V
CE
= 2 V
V
CE
= 5 V
450
400
350
300
250
200
150°C
150°C
25°C
25°C
−55°C
−55°C
150
100
150
100
50
0
50
0
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. DC Current Gain
Figure 2. DC Current Gain
0.35
0.30
0.25
10
1
12 mA 14 mA 16 mA 18 mA
I
B
= 20 mA
I /I = 10
C
B
0.20
0.15
0.10
−55°C
0.1
150°C
2 mA
25°C
0.05
0
4 mA
6 mA
8 mA
10 mA
0.01
0
1
2
3
4
5
6
0.0001
0.001
0.01
0.1
1
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (A)
C
Figure 3. Collector Current as a Function of
Collector Emitter Voltage
Figure 4. Collector−Emitter Saturation Voltage
10
10
1
I /I = 50
I /I = 20
C
B
C
B
1
−55°C
25°C
150°C
−55°C
25°C
150°C
0.1
0.1
0.01
0.01
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Collector−Emitter Saturation Voltage
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3
NST846MTWFT
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
1.2
1.0
−55°C
25°C
−55°C
0.8
25°C
0.6
150°C
0.4 150°C
0.2
0
0.2
I /I = 10
I /I = 20
C B
C
B
0
0.0001
0.001
0.01
0.1
0.1
40
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
I , COLLECTOR CURRENT (A)
C
C
Figure 7. Base−Emitter Saturation Voltage
Figure 8. Base−Emitter Saturation Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
8
7
T = 25°C
f = 1 MHz
A
−55°C
25°C
6
5
4
3
2
150°C
1
0
V
CE
= 5 V
0
0.0001
0.001
0.01
0
1
2
3
4
5
6
I , COLLECTOR CURRENT (A)
V
, BASE−EMITTER VOLTAGE (V)
C
EB
Figure 9. Base−Emitter “ON” Voltage
Figure 10. Input Capacitance
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
T = 25°C
f = 1 MHz
A
10
1
T = 25°C
J
V
CE
= 2 V
f
= 100 MHz
test
0
0
10
20
30
1
10
I , COLLECTOR CURRENT (mA)
100
V
CB
, COLLECTOR−BASE REVERSE VOLTAGE (V)
C
Figure 11. Output Capacitance
Figure 12. fT, Current Gain Bandwidth Product
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4
NST846MTWFT
TYPICAL CHARACTERISTICS
1
1 ms
0.1
10 ms
100 ms
1 s
0.01
Single Pulse Test @ T = 25°C
A
0.001
0.01
0.1
1
10
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
1
2
FR4 PCB, Single−sided, 100 mm pad area, 2 oz Cu thickness, Per JESD51−7
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 14. Thermal Resistance
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFNW3 1x1, 0.65P
CASE 521AC
ISSUE A
DATE 30 OCT 2019
GENERIC
MARKING DIAGRAM*
XXM
XX
M
= Specific Device Code
= Month Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11341H
XDFNW3 1x1, 0.65P
PAGE 1 OF 1
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