NSVMMBT5551M3T5G [ONSEMI]
高电压 NPN 双极晶体管;
| 型号： | NSVMMBT5551M3T5G |
| 厂家： | 
ONSEMI |
| 描述： | 高电压 NPN 双极晶体管 光电二极管 小信号双极晶体管 |
| 文件： | 总5页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5551M3T5G
NPN High Voltage
Transistor
The MMBT5551M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose high
voltage applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
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Features
COLLECTOR
3
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol Value
Unit
Vdc
V
V
160
180
6.0
60
CEO
CBO
Vdc
V
Vdc
EBO
MARKING
DIAGRAM
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
3
SOT−723
CASE 631AA
STYLE 1
AH M
Symbol
Max
Unit
2
Total Device Dissipation
P
D
mW
1
265
2.1
FR−5 Board (Note 1)
AH
M
= Specific Device Code
= Date Code
mW/°C
T = 25°C
A
Derate above 25°C
Thermal Resistance,
R
q
JA
470
°C/W
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T = 25°C
Derate above 25°C
P
640
5.1
mW
mW/°C
°C/W
D
ORDERING INFORMATION
A
†
Device
Package
Shipping
Thermal Resistance,
Junction−to−Ambient
R
q
195
JA
MMBT5551M3T5G
SOT−723 8000/Tape & Reel
(Pb−Free)
Junction and Storage Temperature
T , T
−55 to
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009 − Rev. 0
MMBT5551M3/D
MMBT5551M3T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 3)
V
Vdc
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
160
180
6.0
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
E
C
Collector Cutoff Current
(V = 120 Vdc, I = 0)
I
CBO
−
−
100
100
nAdc
mAdc
CB
E
(V = 120 Vdc, I = 0, T = 100°C)
CB
E
A
Emitter Cutoff Current
(V = 4.0 Vdc, I = 0)
I
nAdc
EBO
−
50
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 1.0 mAdc, V = 5.0 Vdc)
80
80
30
−
250
−
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
C
CE
CE
(I = 50 mAdc, V = 5.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
nA
CE(sat)
−
−
0.15
0.20
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
−
−
1.0
1.0
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Collector Emitter Cut−off
I
CES
(V = 10 V)
−
−
50
100
CB
(V = 75 V)
CB
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
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2
MMBT5551M3T5G
500
300
200
V
V
= 1.0 V
= 5.0 V
CE
T = 125°C
J
CE
25°C
100
-ꢀ55°C
50
30
20
10
7.0
5.0
0.1
0.2
0.3
0.5
0.7
1.0
3.0
I , COLLECTOR CURRENT (mA)
2.0
5.0
7.0
10
20
30
50
70
100
C
Figure 1. DC Current Gain
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I , BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
1
10
1.0
T = 25°C
J
V
CE
= 30 V
0
10
0.8
T = 125°C
J
V
@ I /I = 10
C B
-1
BE(sat)
10
I
C
= I
CES
0.6
0.4
0.2
0
-2
10
10
75°C
REVERSE
-3
FORWARD
25°C
-4
10
10
V
@ I /I = 10
C B
CE(sat)
-5
0.4 0.3 0.2
V
0.1
0
0.1
0.2
0.3
0.4 0.5 0.6
0.1 0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50 100
, BASE-EMITTER VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
BE
Figure 3. Collector Cut−Off Region
Figure 4. “On” Voltages
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3
MMBT5551M3T5G
2.5
2.0
1.5
T = -55°C to +135°C
J
1.0
0.5
0
V
V
CC
30 V
BB
-ꢀ8.8 V
10.2 V
q
for V
CE(sat)
VC
V
in
100
R
3.0 k
R
C
0.25 mF
-0.5
-1.0
-1.5
-2.0
-2.5
10 ms
INPUT PULSE
B
V
out
5.1 k
100
q
for V
BE(sat)
VB
t , t ≤ 10 ns
1N914
r
f
DUTY CYCLE = 1.0%
V
in
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30 50 100
Values Shown are for I @ 10 mA
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Temperature Coefficients
Figure 6. Switching Time Test Circuit
100
1000
500
I /I = 10
C B
70
50
T = 25°C
J
T = 25°C
J
t @ V = 120 V
r CC
30
20
300
200
t @ V = 30 V
r CC
10
100
50
C
ibo
7.0
5.0
t @ V
d
= 1.0 V
EB(off)
C
obo
3.0
2.0
30
20
V
CC
= 120 V
1.0
10
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.2 0.3 0.5 1.0
2.0 3.0 5.0 10
20 30 50 100 200
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 7. Capacitances
Figure 8. Turn−On Time
5000
I /I = 10
B
t @ V = 120 V
f CC
C
3000
2000
T = 25°C
J
t @ V = 30 V
f CC
1000
500
300
t @ V = 120 V
s CC
200
100
50
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30 50
100 200
I , COLLECTOR CURRENT (mA)
C
Figure 9. Turn−Off Time
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4
MMBT5551M3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
MILLIMETERS
INCHES
NOM MAX
0.018 0.020 0.022
L
HE
1
2
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27 0.0059 0.0083 0.0106
0.37 0.010 0.012 0.015
0.17 0.0028 0.0047 0.0067
1.25
0.85
MIN
A
b
b1
C
D
E
e
H E
L
0.45
0.15
0.25
0.07
1.15
0.75
b 2X
C
e
0.08 (0.0032) X Y
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.40 BSC
1.20
0.20
1.15
0.15
1.25
0.045 0.047 0.049
0.25 0.0059 0.0079 0.0098
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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MMBT5551M3/D
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