NSVMSB92T1G [ONSEMI]
高电压 PNP 双极晶体管;
| 型号： | NSVMSB92T1G |
| 厂家： | 
ONSEMI |
| 描述： | 高电压 PNP 双极晶体管 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSB92T1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-59 package
which is designed for low power surface mount applications.
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COLLECTOR
3
Features
•ꢀThis is a Pb-Free Device
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Value
-300
-300
-5.0
150
Unit
Vdc
Collector‐Base Voltage
Collector‐Emitter Voltage
Emitter‐Base Voltage
V
(BR)CBO
(BR)CEO
(BR)EBO
2
1
V
V
Vdc
BASE
EMITTER
Vdc
Collector Current - Continuous
THERMAL CHARACTERISTICS
Rating
I
C
mAdc
MARKING
DIAGRAM
Symbol
Max
150
Unit
mW
°C
3
SC-59
Power Dissipation (Note 1)
Junction Temperature
P
D
J2D MG
CASE 318D
STYLE 1
G
2
T
J
150
1
Storage Temperature Range
T
stg
-ā55X+ā150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
1. Device mounted on a FR‐4 glass epoxy printed circuit board using the minimum
recommendedfootprint.
J2D= Device Marking Code
M
= Date Code
= Pb-Free Package
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
MSB92T1G
Package
Shipping
3000/Tape & Reel
SC-59
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©ꢀ Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 0
1
Publication Order Number:
MSB92T1G/D
MSB92T1G
ELECTRICAL CHARACTERISTICS
Characteristic
Collector‐EmitterBreakdown Voltage
(I = -1.0 mAdc, I = 0)
Symbol
Min
Max
Unit
V
-300
-
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
C
B
Collector‐Base Breakdown Voltage
(I = -100 mAdc, I = 0)
V
V
-300
-5.0
-
-
-
Vdc
Vdc
mA
mA
-
C
E
Emitter‐Base Breakdown Voltage
(I = -100 mAdc, I = 0)
E
E
Collector‐Base Cutoff Current
(V = -200 Vdc, I = 0)
I
I
-0.25
-0.1
CBO
EBO
CB
E
Emitter-Base Cutoff Current
(V = -3.0 Vdc, I = 0)
-
EB
B
DC Current Gain (Note 2)
(V = -10 Vdc, I = -1.0 mAdc)
(V = -10 Vdc, I = -10 mAdc)
h
FE1
h
FE2
h
FE3
25
40
25
-
-
-
CE
C
CE
C
(V = -10 Vdc, I = -30 mAdc)
CE C
Collector‐Emitter Saturation Voltage
(I = -20 mAdc, I = -2.0 mAdc)
V
-
-0.5
Vdc
Vdc
CE(sat)
C
B
Base-Emitter Saturation Voltage
(I = -20 mAdc, I = -2.0 mAdc)
V
BE(sat)
-
-0.9
C
B
SMALL SIGNAL CHARACTERISTICS
Currentā-āGain - Bandwidth Product
(I = -10 mAdc, V = -20 Vdc, f = 20 MHz)
f
50
-
-
MHz
pF
T
C
CE
Collector-Base Capacitance
(V = -20 Vdc, I = 0, f = 1.0 MHz)
C
6.0
cb
CB
E
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
MSB92T1G
120
100
V
CE
= 10 Vdc
T = +125°C
J
80
60
25°C
40
20
0
-55°C
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
100
10
C
@ 1MHz
eb
1.0
0.1
C
@ 1MHz
cb
0.1
1.0
10
100
1000
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Capacitance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
V
@ 25°C, I /I = 10
C B
CE(sat)
@ 125°C, I /I = 10
CE(sat)
CE(sat)
BE(sat)
C B
V
V
@ -55°C, I /I = 10
C B
@ 25°C, I /I = 10
C
B
V
V
V
@ 125°C, I /I = 10
C B
BE(sat)
BE(sat)
BE(on)
@ -55°C, I /I = 10
C
B
@ 25°C, V = 10 V
CE
V
V
@ 125°C, V = 10 V
BE(on)
CE
@ -55°C, V = 10 V
CE
BE(on)
0.1
1.0
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 3. “ON” Voltages
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3
MSB92T1G
PACKAGE DIMENSIONS
SC-59
CASE 318D-04
ISSUE G
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
MILLIMETERS
INCHES
NOM
E
H
E
DIM
A
A1
b
c
D
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
2
1
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
b
E
e
e
L
H
E
C
A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
mm
inches
ǒ
Ǔ
SCALE 10:1
0.031
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
MountingTechniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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MSB92T1G/D
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