NSVT3946DXV6T1G [ONSEMI]
双 NPN PNP 双极晶体管;
| 型号： | NSVT3946DXV6T1G |
| 厂家： | 
ONSEMI |
| 描述： | 双 NPN PNP 双极晶体管 小信号双极晶体管 |
| 文件： | 总12页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NST3946DXV6T1G,
NST3946DXV6T5G
Complementary General
Purpose Transistor
The NST3946DXV6T1 device is a spin-off of our popular
SOT−23/SOT−323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
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SOT−563
CASE 463A
• h , 100−300
FE
• Low V
, ≤ 0.4 V
CE(sat)
(3)
(2)
(1)
Q
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Q
1
2
(4)
(5)
(6)
Table 1. MAXIMUM RATINGS
NST3946DXV6T1*
Rating
Symbol
Value
Unit
*Q1 PNP
Q2 NPN
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
(NPN)
(PNP)
40
−40
MARKING DIAGRAM
Collector−Base Voltage
Vdc
Vdc
mAdc
V
(NPN)
(PNP)
60
−40
46 MG
Emitter−Base Voltage
G
(NPN)
(PNP)
6.0
−5.0
46 = Specific Device Code
Collector Current − Continuous
I
C
M
G
= Date Code
= Pb-Free Package
(NPN)
(PNP)
200
−200
(Note: Microdot may be in either location)
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Package
Shipping
NST3946DXV6T1G SOT−563 4,000/Tape & Reel
(Pb-Free)
NST3946DXV6T5G SOT−563 8,000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 2
NST3946DXV6T1/D
NST3946DXV6T1G, NST3946DXV6T5G
Table 2. THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T = 25°C
A
P
357
(Note 1)
2.9
mW
D
Derate above 25°C
mW/°C
°C/W
(Note 1)
Thermal Resistance
Junction-to-Ambient
R
350
(Note 1)
q
JA
Characteristic (Both Junctions Heated)
Total Device Dissipation
Symbol
Max
Unit
T = 25°C
A
P
D
500
(Note 1)
4.0
mW
Derate above 25°C
mW/°C
°C/W
°C
(Note 1)
Thermal Resistance Junction-to-Ambient
R
250
(Note 1)
q
JA
Junction and Storage Temperature Range
T , T
55 to +150
J
stg
1. FR−4 @ Minimum Pad
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 2)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
(NPN)
(PNP)
40
−
−
C
B
(I = −1.0 mAdc, I = 0)
−40
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
(NPN)
(PNP)
60
−40
−
−
C
E
(I = −10 mAdc, I = 0)
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
Vdc
(NPN)
(PNP)
6.0
−5.0
−
−
E
C
(I = −10 mAdc, I = 0)
E
C
Base Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
nAdc
nAdc
BL
(NPN)
(PNP)
−
−
50
CE
EB
(V = −30 Vdc, V = −3.0 Vdc)
−50
CE
EB
Collector Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
CEX
(NPN)
(PNP)
−
−
50
−50
CE
EB
(V = −30 Vdc, V = −3.0 Vdc)
CE
EB
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 1.0 Vdc)
(NPN)
(PNP)
40
70
100
60
30
−
−
300
−
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
CE
CE
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
(I = 50 mAdc, V = 1.0 Vdc)
C
(I = 100 mAdc, V = 1.0 Vdc)
C
(I = −0.1 mAdc, V = −1.0 Vdc)
60
80
100
60
30
−
−
300
−
−
C
CE
CE
CE
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
(I = −10 mAdc, V = −1.0 Vdc)
C
(I = −50 mAdc, V = −1.0 Vdc)
C
(I = −100 mAdc, V = −1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
(NPN)
(PNP)
−
−
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(I = −10 mAdc, I = −1.0 mAdc)
−
−
−0.25
−0.4
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
(NPN)
(PNP)
0.65
−
0.85
0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(I = −10 mAdc, I = −1.0 mAdc)
−0.65
−
−0.85
−0.95
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
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NST3946DXV6T1G, NST3946DXV6T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
A
Characteristic
SMALL-SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
Symbol
Min
Max
Unit
f
T
MHz
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
(NPN)
(PNP)
300
250
−
−
C
CE
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
pF
pF
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
(NPN)
(PNP)
−
−
4.0
4.5
CB
E
(V = −5.0 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
(NPN)
(PNP)
−
−
8.0
10.0
EB
C
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
Input Impedance
h
k Ω
ie
re
fe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
1.0
2.0
10
12
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
−4
Voltage Feedback Ratio
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
h
X 10
−
(NPN)
(PNP)
0.5
0.1
8.0
10
CE
C
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
Small−Signal Current Gain
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
100
100
400
400
CE
C
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
Output Admittance
h
mmhos
dB
oe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
1.0
3.0
40
60
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Noise Figure
NF
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 k Ω, f = 1.0 kHz)
(NPN)
(PNP)
−
−
5.0
4.0
CE
C
S
(V = −5.0 Vdc, I = −100 mAdc, R = 1.0 k Ω, f = 1.0 kHz)
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
t
ns
ns
d
(V = 3.0 Vdc, V = −0.5 Vdc)
(NPN)
(PNP)
−
−
35
35
CC
BE
(V = −3.0 Vdc, V = 0.5 Vdc)
CC
BE
Rise Time
t
r
(I = 10 mAdc, I = 1.0 mAdc)
(NPN)
(PNP)
−
−
35
35
C
B1
B1
(I = −10 mAdc, I = −1.0 mAdc)
C
Storage Time
t
s
(V = 3.0 Vdc, I = 10 mAdc)
(NPN)
(PNP)
−
−
200
225
CC
C
C
(V = −3.0 Vdc, I = −10 mAdc)
CC
Fall Time
t
f
(I = I = 1.0 mAdc)
(NPN)
(PNP)
−
−
50
75
B1
B2
(I = I = −1.0 mAdc)
B1
B2
2. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%.
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3
NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t < 500 ms
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
-ꢀ0.5 V
C < 4 pF*
s
C < 4 pF*
s
1N916
-ꢀ9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
(NPN)
7.0
5.0
C
ibo
3.0
2.0
C
obo
1.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
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4
NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
500
500
I /I = 10
C B
V
CC
I /I = 10
= 40 V
300
200
300
200
C B
100
70
100
t @ V = 3.0 V
r CC
70
50
50
30
20
30
20
40 V
15 V
10
10
(NPN)
(NPN)
2.0 V
7
5
7
5
t @ V = 0 V
OB
d
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. Turn-On Time
Figure 5. Rise Time
500
500
1
t′ = t - / t
8 f
s
s
V
I
= 40 V
CC
= I
300
200
300
200
I
= I
B1 B2
I /I = 20
C B
I /I = 10
C B
B1 B2
I /I = 20
C B
100
70
100
70
I /I = 20
C B
50
50
I /I = 10
C B
I /I = 10
C B
30
20
30
20
10
10
(NPN)
(NPN)
7
5
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. Storage Time
Figure 7. Fall Time
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
10
8
14
SOURCE RESISTANCE = 200 W
I = 1.0 mA
f = 1.0 kHz
I = 1.0 mA
C
12
10
8
C
I = 0.5 mA
C
SOURCE RESISTANCE = 200 W
I = 0.5 mA
I = 50 mA
C
C
6
4
I = 100 mA
C
SOURCE RESISTANCE = 1.0 k
I = 50 mA
6
4
2
0
C
2
0
SOURCE RESISTANCE = 500 W
I = 100 mA
(NPN
)
(NPN)
10
C
0.1 0.2
0.4
1.0 2.0 4.0
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
S
Figure 8. Noise Figure
Figure 9. Noise Figure
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NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
(NPN)
(NPN)
50
20
10
5
100
70
50
30
2
1
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. Current Gain
Figure 11. Output Admittance
20
10
10
7.0
5.0
(NPN)
(NPN)
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 12. Input Impedance
Figure 13. Voltage Feedback Ratio
1 ms
1000
100
10
1 ms
100 ms
10 ms
1 s
(NPN)
Single Pulse Test at T = 25°C
A
1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
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NST3946DXV6T1G, NST3946DXV6T5G
(NPN)
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
(NPN)
+25°C
-ꢀ55°C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
(NPN)
I = 1.0 mA
C
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 16. Collector Saturation Region
1.2
1.0
0.8
1.0
(NPN)
T = 25°C
J
(NPN)
V
@ I /I =10
C B
BE(sat)
+25°C TO +125°C
-ꢀ55°C TO +25°C
0.5
0
q
FOR V
CE(sat)
VC
V
BE
@ V =1.0 V
CE
0.6
0.4
-ꢀ0.5
-ꢀ1.0
-ꢀ55°C TO +25°C
+25°C TO +125°C
V
@ I /I =10
C B
CE(sat)
q
FOR V
BE(sat)
VB
0.2
0
-ꢀ1.5
-ꢀ2.0
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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NST3946DXV6T1G, NST3946DXV6T5G
(PNP)
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
C < 4 pF*
s
C < 4 pF*
s
1N916
10.6 V
300 ns
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
(PNP)
7.0
C
5.0
obo
C
ibo
3.0
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
REVERSE BIAS (VOLTS)
Figure 21. Capacitance
T = 25°C
J
T = 125°C
J
500
500
I /I = 10
C B
(PNP)
(PNP)
V
= 40 V
CC
300
200
300
200
I = I
B1 B2
I /I = 20
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
15 V
30
30
20
I /I = 10
C B
20
40 V
10
10
2.0 V
7
5
7
5
t @ V = 0 V
OB
d
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50
70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 23. Fall Time
Figure 22. Turn-On Time
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NST3946DXV6T1G, NST3946DXV6T5G
(PNP)
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
5.0
4.0
3.0
2.0
1.0
0
SOURCE RESISTANCE = 200 W
I = 1.0 mA
f = 1.0 kHz
I = 1.0 mA
C
C
10
8
I = 0.5 mA
C
SOURCE RESISTANCE = 200 W
I = 0.5 mA
C
SOURCE RESISTANCE = 2.0 k
6
I = 50 mA
C
4
I = 50 mA
C
SOURCE RESISTANCE = 2.0 k
I = 100 mA
I = 100 mA
C
2
C
(PNP)
(PNP)
10
0
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 24.
Figure 25.
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
100
300
200
(PNP)
(PNP)
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 26. Current Gain
Figure 27. Output Admittance
20
10
10
7.0
5.0
(PNP)
(PNP)
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 28. Input Impedance
Figure 29. Voltage Feedback Ratio
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NST3946DXV6T1G, NST3946DXV6T5G
(PNP)
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
+25°C
-ꢀ55°C
0.7
0.5
0.3
0.2
(PNP)
0.3
0.1
0.1
0.2
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
Figure 30. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
(PNP)
I = 1.0 mA
C
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 31. Collector Saturation Region
1.0
0.8
0.6
1.0
T = 25°C
J
V
@ I /I = 10
BE(sat) C B
0.5
0
+25°C TO +125°C
-ꢀ55°C TO +25°C
q
FOR V
CE(sat)
VC
V
BE
@ V = 1.0 V
CE
(PNP)
(PNP)
-ꢀ0.5
-ꢀ1.0
+25°C TO +125°C
-ꢀ55°C TO +25°C
0.4
0.2
0
V
@ I /I = 10
C B
CE(sat)
q
FOR V
BE(sat)
VB
-ꢀ1.5
-ꢀ2.0
1.0
2.0 5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 32. “ON” Voltages
Figure 33. Temperature Coefficients
http://onsemi.com
10
NST3946DXV6T1G, NST3946DXV6T5G
1000
1 ms
100 ms 10 ms 1 ms
100
1 s
(PNP)
10
Single Pulse Test at T = 25°C
A
1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 34. Safe Operating Area
http://onsemi.com
11
NST3946DXV6T1G, NST3946DXV6T5G
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
−X−
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
L
6
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
E
−Y−
MIN
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
1.60
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NST3946DXV6T1/D
相关型号：
NSVT489AMT1G
High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications
ONSEMI
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