NTBGS4D1N15MC [ONSEMI]
Power MOSFET, 150 V, 4.1 mΩ, 185A, Single N−Channel, D2PAK7;
| 型号： | NTBGS4D1N15MC |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, 150 V, 4.1 mΩ, 185A, Single N−Channel, D2PAK7 |
| 文件： | 总7页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Single N-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
4.1 mW @ 10 V
4.7 mW @ 8 V
150 V
185 A
150 V, 4.1 mW, 185 A
NTBGS4D1N15MC
D (Pin 4, TAB)
Features
Low R
to Minimize Conduction Losses
DS(on)
Low Q and Capacitance to Minimize Driver Losses
G
G (Pin 1)
Lowers Switching Noise/EMI
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
S (Pins 2,3,5,6,7)
N−CHANNEL MOSFET
Compliant
Typical Applications
Power Tools, Battery Operated Vacuums
UAV/Drones, Material Handling
BMS/Storage, Home Automation
MARKING
DIAGRAM
AYWWG
NTBG
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
S4D1N15
2
Parameter
Drain−to−Source Voltage
Symbol
Value
150
Unit
V
D PAK7
CASE 418AY
V
DSS
Gate−to−Source Voltage
V
20
V
GS
A
Y
= Assembly Location
= Year
Continuous Drain
Current R
I
185
A
D
WW = Work Week
= Pb−Free Package
q
JC
Steady
State
(Note 2)
G
T
= 25C
C
Power Dissipation
P
316
20
W
A
D
R
(Note 2)
q
JC
Continuous Drain
Current R
I
D
q
ORDERING INFORMATION
JA
Steady
State
(Notes 1, 2)
T = 25C
A
†
Device
Package
Shipping
Power Dissipation
P
3.7
W
D
2
R
(Notes 1, 2)
NTBGS4D1N15MC
800 / Tape &
Reel
q
D PAK7
JA
(Pb−Free)
Pulsed Drain Current
T = 25C, t = 10 ms
A
I
DM
2564
A
p
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Operating Junction and Storage Temperature
Range
T , T
−55 to
C
J
stg
+175
Source Current (Body Diode)
I
S
263
332
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 81.5 A , L = 0.1 mH)
L
pk
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using a 1 in , 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2023 − Rev. 2
NTBGS4D1N15MC/D
NTBGS4D1N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.5
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
150
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
20.28
mV/C
(BR)DSS
I
D
= 250 mA, referenced to 25C
Zero Gate Voltage Drain Current
I
T = 25C
1
mA
mA
nA
DSS
J
V
DS
= 0 V,
GS
V
= 120 V
T = 125C
J
10
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 20 V, V = 0 V
100
GSS
GS
DS
V
V
= V , I = 574 mA
2.5
3.5
4.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
−10.21
mV/C
GS(TH)
J
I
D
= 250 mA, referenced to 25C
Drain−to−Source On Resistance
R
V
= 10 V, I = 104 A
3.3
3.5
4.1
4.7
mW
DS(on)
GS
D
V
V
= 8 V, I = 52 A
D
GS
DS
Forward Transconductance
Gate−Resistance
g
FS
= 5 V, I = 90 A
10.9
1.2
S
D
R
T = 25C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
7285
2025
10.6
88.9
22.8
37.5
13.0
272
pF
nC
ISS
Output Capacitance
C
V
GS
= 0 V, f = 1 MHz, V = 75 V
DS
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Output Charge
Q
G(TH)
V
GS
= 10 V, V = 75 V,
DS
D
I
= 104 A
Q
GS
GD
Q
Q
V
GS
= 0 V, V = 75 V
nC
ns
OSS
DS
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
t
49
38
64
10
d(ON)
t
r
V
= 10 V, V = 75 V,
DS
GS
D
I
= 104 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V, I = 104 A, T = 25C
0.88
0.79
89
1.2
V
SD
RR
GS
S
J
V
GS
= 0 V, I = 104 A, T = 125C
S J
Reverse Recovery Time
Charge Time
t
ns
t
47
a
V
GS
= 0 V, I = 104 A,
S
S
dI /dt = 100 A/ms
Discharge Time
t
42
b
Reverse Recovery Charge
Q
164
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperature
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2
NTBGS4D1N15MC
TYPICAL CHARACTERISTICS
180
165
150
135
120
105
90
180
V
GS
= 10 V to 6.5 V
V
GS
= 5 V
165
150
135
120
105
90
6.0 V
75
75
T = 25C
J
60
60
5.5 V
5.0 V
45
30
15
0
45
30
15
0
T = 175C
J
T = −55C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN−TO−SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10
V
DS
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
80
70
60
50
40
30
20
T = 25C
J
T = 25C
J
I
D
= 104 A
V
= 8 V
GS
V
GS
= 10 V
2.5
2.0
10
0
5.5 6.0 6.5 7.0
7.5 8.0 8.5
9.0 9.5
10
0
25 50
75 100 125 150 175 200 225 250
I , DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.6
1M
100K
10K
V
GS
= 0 V
V
= 10 V
= 104 A
GS
2.4
2.2
2.0
1.8
I
D
T = 175C
J
T = 150C
J
1.6
1.4
1.2
1.0
T = 125C
J
1K
0.8
0.6
−50 −25
100
0
25
50
75
100 125 150 175
0
15 30 45
60
75 90 105 120 135 150
T , JUNCTION TEMPERATURE (C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTBGS4D1N15MC
TYPICAL CHARACTERISTICS
10
10K
1K
C
Q
ISS
9
G(TOT)
8
C
OSS
7
6
Q
Q
GD
GS
5
4
3
2
1
0
100
C
RSS
10
1
V
= 75 V
= 104 A
DS
V
= 0 V
GS
I
D
T = 25C
J
T = 25C
J
f = 1 MHz
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
1000
100
V = 0 V
GS
V
V
= 10 V
= 75 V
= 104 A
GS
t
d(off)
DS
I
D
t
r
t
d(on)
t
f
10
1
1
T = 175C
J
T = 150C
T = −55C
J
T = 25C
J
J
0.1
0
10
20
30
40
50
60
0.2 0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
10 ms
100
T
= 25C
J(initial)
100 ms
T
V
= 25C
10 V
C
10
1
GS
T
= 125C
J(initial)
Single Pulse
1 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
100 ms & 1 sec
100
0.1
1E−06 1E−05 1E−04 1E−03
1E−02 1E−01 1E+00
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTBGS4D1N15MC
TYPICAL CHARACTERISTICS
1
0.1
50% Duty Cycle
20%
10%
5%
2%
1%
0.01
0.001
Single Pulse
0.000001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263 7 LD)
CASE 418AY
ISSUE C
DATE 15 JUL 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13798G
D2PAK7 (TO−263 7 LD)
PAGE 1 OF 1
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