NTH4L028N170M1 [ONSEMI]
碳化硅（SiC）MOSFET – EliteSiC系列，28mohm，1700V，M1，TO-247-4L;
| 型号： | NTH4L028N170M1 |
| 厂家： | 
ONSEMI |
| 描述： | 碳化硅（SiC）MOSFET – EliteSiC系列，28mohm，1700V，M1，TO-247-4L |
| 文件： | 总8页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
28ꢀmohm, 1700ꢀV, M1,
TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1700 V
40 mꢀ @ 20 V
81 A
D
NTH4L028N170M1
G
Features
S1: Driver Source
S2: Power Source
• Typ. R
• Ultra Low Gate Charge (Q
= 28 mꢀ @ V = 20 V
GS
DS(on)
S1
S2
= 200 nC)
G(tot)
N−CHANNEL MOSFET
• High Speed Switching with Low Capacitance (C = 200 pF)
oss
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• UPS
• DC−DC Converter
• Boost Converter
D
S2
S1
G
TO−247−4L
CASE 340CJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
1700
Unit
V
V
DSS
MARKING DIAGRAM
Gate−to−Source Voltage
V
GS
−15/+25
−5/+20
V
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
V
C
Continuous Drain
Current (Note 1)
Steady
State
T
I
D
81
535
57
A
W
A
C
H4L028
N170M1
AYWWZZ
Power Dissipation
(Note 1)
P
D
Continuous Drain
Current (Note 1)
Steady
State
T
C
= 100°C
I
D
H4L028N170M1 = Specific Device Code
Power Dissipation
(Note 1)
P
267
363
W
A
D
A
Y
= Assembly Location
= Year
Pulsed Drain Current
(Note 2)
T
C
= 25°C
I
DM
WW = Work Week
ZZ
= Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
Source Current (Body Diode)
I
124
450
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Device
Package
Shipping
Energy (I
= 30 A, L = 1 mH) (Note 3)
L(pk)
NTH4L028N170M1
TO−247−4L
30 Units /
Tube
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
300
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 450 mJ is based on starting T = 25°C; L = 1 mH, I = 30 A,
J
AS
V
DD
= 120 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
January, 2023 − Rev. 1
NTH4L028N170M1/D
NTH4L028N170M1
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
Unit
Junction−to−Case − Steady State (Note 1)
R
0.28
°C/W
ꢁ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1700
−
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25°C
D
0.46
V/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
= 1700 V
T = 25°C
−
−
−
−
−
−
100
1
ꢂ A
mA
ꢂ A
DSS
GS
J
V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
GS
= +25/−15 V, V = 0 V
1
GSS
DS
V
R
V
= V , I = 20 mA
1.8
−5
−
2.75
−
4.3
+20
40
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
= 20 V, I = 60 A, T = 25°C
28
57
31
mꢀ
DS(on)
GS
D
J
V
= 20 V, I = 60 A, T = 175°C
−
GS
D
J
Forward Transconductance
g
V
= 20 V, I = 60 A
−
−
S
FS
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
4230
200
10
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
= −5/20 V, V = 800 V,
200
77
G(TOT)
GS
DS
I
D
= 60 A
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
Q
GS
46
GD
R
f = 1 MHz
5.8
ꢀ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
V
= −5/20 V,
= 1200 V,
= 60 A,
−
−
−
−
−
−
−
47
18
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
t
r
I
D
R
= 2 ꢀ
G
Turn−Off Delay Time
t
121
13
d(OFF)
inductive load
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
1311
683
1994
ꢂ
J
E
OFF
E
tot
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
Current
I
V
GS
= −5 V, T = 25°C
−
−
−
−
124
363
A
SD
J
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= −5 V, I = 60 A, T = 25°C
−
−
−
4.3
34
−
−
−
V
SD
SD
J
t
V
GS
= −5/20 V, I = 60 A,
ns
nC
RR
SD
dI /dt = 1000 A/ꢂ s
S
Q
263
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTH4L028N170M1
TYPICAL CHARACTERISTICS
3.0
120
120
80
16 V
V
= 20 V
14 V
14 V
V
GS
= 12 V
GS
2.5
2.0
1.5
12 V
18 V
16 V
60
18 V
20 V
40
1.0
0.5
20
0
0
3
6
9
12
0
30
60
I , DRAIN CURRENT (A)
90
120
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.2
160
140
120
100
80
I
D
= 60 A
I
V
= 60 A
D
2.0
1.8
1.6
1.4
1.2
1.0
= 20 V
GS
T = 150°C
J
60
40
20
0.8
0.6
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
8
11
14
17
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
300
100
120
100
80
T = 175°C
J
V
GS
= 0 V
V
DS
= 20 V
T = −55°C
J
60
T = 25°C
J
T = 25°C
10
1
J
40
T = 175°C
J
20
0
T = −55°C
J
0
2
4
6
8
0
4
8
12
16
20
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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3
NTH4L028N170M1
TYPICAL CHARACTERISTICS
2.5
2.0
1.5
1.0
3.0
E
T = 25°C
DD
TOTAL
T = 125°C
DD
J
V
J
V
= 1200 V
= 1200 V
E
2.5
2.0
1.5
1.0
TOTAL
R
V
= 2 ꢀ
= −5 V/+20 V
= 30 nH
R
= 2 ꢀ
G(EXT)
G(EXT)
V
L
= −5 V/+20 V
= 30 nH
GS
GS
L
Stray
E
ON
Stray
FWD: NDSH25170A
FWD: NDSH25170A
E
ON
E
OFF
E
OFF
0.5
0
0.5
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
90
I , DRAIN−TO−SOURCE CURRENT (A)
D
I , DRAIN−TO−SOURCE CURRENT (A)
D
Figure 7. Switching Loss vs. Drain−to−Source
Figure 8. Switching Loss vs. Drain−to−Source
Current (255C)
Current (1255C)
3.5
T = 25°C
DD
J
V
E
TOTAL
= 1200 V
3.0
2.5
2.0
1.5
1.0
I
= 60 A
DS
V
GS
= −5 V/+20 V
E
ON
E
OFF
0.5
0
L
= 30 nH
Stray
FWD: NDSH25170A
0
2
4
6
8
10
12
R
, EXTERNAL GATE RESISTANCE (ꢀ)
G(EXT)
Figure 9. Switching Loss vs. External Gate
Resistance
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4
NTH4L028N170M1
TYPICAL CHARACTERISTICS
10000
20
15
10
5
C
V
DD
= 400 V
iss
I
D
= 60 A
V
= 600 V
1000
DD
V
DD
= 800 V
C
oss
100
C
rss
10
1
0
f = 1 MHz
= 0 V
V
GS
−5
0
20 40 60 80 100 120 140 160 180 200
1
10
100
800
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 10. Gate−to−Source Voltage vs. Total
Charge
Figure 11. Capacitance vs. Drain−to−Source
Voltage
90
100
80
70
60
50
40
30
20
V
GS
= 20 V
25°C Rating
10
R
= 0.28°C/W
10
0
ꢁ
JC
1
0.001
0.01
t
0.1
1
10
100
25
50
75
100
125
150
175
, TIME IN AVALANCHE (mS)
T , CASE TEMPERATURE (°C)
C
AV
Figure 12. Unclamped Inductive Switching
Capability
Figure 13. Maximum Continuous Drain
Current vs. Case Temperature
100000
10000
400
100
Single Pulse
10 ꢂ s
R
T
= 0.28°C/W
= 25°C
ꢁ
JC
C
100 ꢂ s
10
1 ms
1000
100
10 ms
1
Single Pulse
T = 175°C
J
R
= 0.28°C/W
ꢁ
JC
T
C
= 25°C
DC
0.1
0.1
1
10
100
1000
0.00001 0.0001 0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 14. Safe Operating Area
Figure 15. Single Pulse Maximum Power
Dissipation
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5
NTH4L028N170M1
TYPICAL CHARACTERISTICS
1
0.5 Duty Cycle
0.2
0.1
0.1
0.05
P
0.02
DM
0.01
Notes:
= 0.28°C/W
R
0.01
ꢁ
JC
t
1
Duty Cycle, D = t /t
1
2
t
Single Pulse
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 16. Junction−to−Case Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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