NTH4L040N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L;
| 型号： | NTH4L040N120SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L |
| 文件： | 总8页 (文件大小：356K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
40ꢀmohm, 1200ꢀV, M1,
TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
56 mꢀ @ 20 V
58 A
D
NTH4L040N120SC1
G
Features
S1: Kelvin Source
S2: Power Source
• Typ. R
= 40 mꢀ
• Ultra Low Gate Charge (Q
DS(on)
= 106 nC)
G(tot)
S1 S2
• High Speed Switching with Low Capacitance (C = 137 pF)
oss
N−CHANNEL MOSFET
• 100% Avalanche Tested
• T = 175°C
J
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• UPS
• DC-DC Converter
• Boost Inverter
D
S2
S1
G
TO−247−4LD
CASE 340CJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
1200
−15/+25
−5/+20
V
V
V
Gate−to−Source Voltage
V
GS
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
AYWWZZ
NTH4L040
N120SC1
C
Continuous Drain
Current (Note 2)
Steady
State
T
I
D
58
319
41
A
W
A
C
Power Dissipation
(Note 2)
P
D
Continuous Drain
Current (Notes 1, 2)
Steady
State
T
C
= 100°C
I
D
A
Y
= Assembly Location
= Year
Power Dissipation
(Notes 1, 2)
P
160
232
W
A
WW = Work Week
ZZ = Lot Traceability
NTH4L040N120SC1 = Specific Device Code
D
Pulsed Drain Current
(Note 3)
T = 25°C
A
I
DM
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
Device
Package
Shipping
Source Current (Body Diode)
I
S
32
A
Single Pulse Drain−to−Source Avalanche
E
AS
578
mJ
NTH4L040N120SC1 TO−247−4LD 30 Units /
Energy (I
= 34 A, L = 1 mH) (Note 4)
L(pk)
Tube
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. JA is constant value to follow guide table of LV/HV discrete final datasheet
generation.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. EAS of 578 mJ is based on starting T = 25°C; L = 1 mH, I = 34 A,
J
AS
V
DD
= 120 V, V = 20 V.
GS
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 4
NTH4L040N120SC1/D
NTH4L040N120SC1
Table 1. THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
Symbol
Max
0.47
40
Unit
°C/W
R
ꢁ
JC
R
ꢁ
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25°C
D
−
0.45
V/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
100
1
ꢂ A
mA
ꢂ A
DSS
GS
DS
J
= 1200 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
V
= +25/−15 V, V = 0 V
1
GSS
GS
DS
V
R
= V , I = 10 mA
1.8
−5
−
3
4.3
+20
56
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
−
GOP
V
GS
V
GS
V
DS
= 20 V, I = 35 A, T = 25°C
40
70
20
mꢀ
DS(on)
D
J
= 20 V, I = 35 A, T = 175°C
−
100
−
D
J
Forward Transconductance
g
FS
= 20 V, I = 35 A
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
1762
137
11
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
D
= −5/20 V, V = 600 V,
106
16
G(TOT)
GS
DS
I
= 47 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
G(TH)
Q
34
GS
GD
Q
26
R
f = 1 MHz
2.4
ꢀ
G
SWITCHING CHARACTERISTICS, VGS = 10 V
Turn−On Delay Time
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
17
20
30
36
51
20
−
ns
d(ON)
GS
DS
I
= 47 A, R = 4.7 ꢀ
G
Rise Time
t
r
Inductive load
Turn−Off Delay Time
t
32
d(OFF)
Fall Time
t
f
10
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
411
205
616
ꢂ
J
E
−
OFF
E
tot
−
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
GS
= −5 V, T = 25°C
−
−
−
−
32
A
SD
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
232
SDM
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
V
= −5 V, I = 17.5 A, T = 25°C
−
−
−
3.7
24
−
−
−
V
SD
GS
SD
J
t
= −5/20 V, I = 47 A,
ns
nC
RR
GS
S
SD
dI /dt = 1000 A/ꢂ s
Q
124.8
RR
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2
NTH4L040N120SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Symbol
Test Condition
Min
Typ
Max
Unit
E
REC
V
= −5/20 V, I = 47 A,
−
−
−
−
8.4
−
−
−
−
ꢂ J
A
GS
S
SD
dI /dt = 1000 A/ꢂ s
I
10.4
12.4
11.6
RRM
Ta
ns
ns
Discharge Time
Tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NTH4L040N120SC1
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
4.0
V
= 20 V
12 V
16 V
15 V
V
= 10 V
GS
GS
3.5
3.0
2.5
2.0
1.5
16 V
19 V
15 V
20 V
17 V
18 V
18 V
17 V
12 V
10 V
1.0
0.5
10
0
19 V
40 50 60 70 80 90 100
I , DRAIN CURRENT (A)
0
2
4
6
8
10
0
9
2
10
20 30
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
300
200
1.9
1.7
1.5
1.3
1.1
I
= 35 A
D
I
V
= 35 A
= 20 V
D
GS
100
0
T = 150°C
J
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
10 11 12 13 14 15 16 17 18 19 20
T , JUNCTION TEMPERATURE (°C)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
100
80
300
V
= −5 V
V
= 20 V
GS
DS
60
T = 25°C
T = 175°C
J
J
30
40
T = −55°C
J
T = 25°C
J
20
0
T = 175°C
J
T = −55°C
J
3
2
4
6
8
10
12
14
16
18
3
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NTH4L040N120SC1
TYPICAL CHARACTERISTICS (CONTINUED)
10K
20
V
DD
= 400 V
I
D
= 47 A
C
iss
15
10
5
1K
V
= 800 V
DD
C
oss
V
= 600 V
DD
100
C
rss
10
1
0
f = 1 MHz
= 0 V
V
GS
−5
0
10 20 30 40 50 60 70 80 90 100 110
0.1
1
10
100
800
175
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
500
100
60
50
40
30
20
V
= 20 V
GS
T = 25°C
J
T = 150°C
J
10
1
10
0
Typical performance based
on characterization data
R
= 0.47°C/W
ꢁ
JC
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
100
100K
10K
1K
Single Pulse
R
T
= 0.47°C/W
ꢁ
JC
= 25°C
C
10 ꢂ s
10
1
100 ꢂ s
1 ms
10 ms
100 ms
Single Pulse
T = Max Rated
100
10
0.1
J
R
T
= 0.47°C/W
ꢁ
JC
= 25°C
C
0.01
0.1
1
10
100
1K
5K
0.00001 0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NTH4L040N120SC1
TYPICAL CHARACTERISTICS (CONTINUED)
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Notes:
(t) = r(t) x R
P
DM
1%
Z
ꢁ
ꢁ
JC
JC
0.01
R
= 0.47°C/W
Single Pulse
ꢁ
JC
t
Peak T = P
x Z
(t) + T
JC C
1
ꢁ
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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