NTHL017N60S5H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 75 A, 17.9 mΩ, TO-247;
| 型号： | NTHL017N60S5H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 75 A, 17.9 mΩ, TO-247 |
| 文件： | 总7页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET),
FAST, TO247
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
17 mW @ 10 V
75 A
D
600 V, 17 mW, 75 A
NTHL017N60S5H
Description
The SUPERFET V MOSFET FAST series helps maximize system
efficiency by the extremely low switching losses in hard switching
application.
G
S
Features
N−CHANNEL MOSFET
• 650 V @ T = 150°C / Typ. R
= 14.3 mW
J
DS(on)
• 100% Avalanche Tested
• Pb−Free, Halogen Free / BFR Free and RoHS Compliant
Applications
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
V
DSS
TO−247−3LD
CASE 340CX
Gate−to−Source Voltage
DC
V
GS
V
AC (f > 1 Hz)
30
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
I
75
A
C
D
MARKING DIAGRAM
T
C
75
Power Dissipation
T
T
P
625
431
431
W
A
C
D
Pulsed Drain Current (Note 1)
I
DM
C
Pulsed Source Current
(Body Diode) (Note 1)
I
A
SM
T017N
60S5H
AYWWZZ
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
Source Current (Body Diode)
I
S
75
A
Single Pulse Avalanche Energy
I = 13.2 A,
G
E
AS
1350
mJ
L
R
= 25 W
Avalanche Current
I
13.2
6.25
120
20
A
T017N60S5H = Specific Device Code
= Assembly Location
YWW = Date Code (Year & Week)
AS
A
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
dv/dt
V/ns
ZZ
= Assembly Lot
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260
°C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NTHL017N60S5H
Package
Shipping
TO247
30 Units /
Tube
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 37.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
October, 2022 − Rev. 0
NTHL017N60S5H/D
NTHL017N60S5H
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.2
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 10 mA, T = 25°C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25°C
−
−
−
−
5
mA
DSS
GSS
DS
J
I
V
GS
=
30 V, V = 0 V
100
nA
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 37.5 A, T = 25°C
−
2.7
−
14.3
−
17.9
4.3
−
mW
V
DS(on)
GS
D
J
V
V
= V , I = 16 mA, T = 25°C
GS DS D J
GS(TH)
Forward Transconductance
g
FS
V
DS
= 20 V, I = 37.5 A
102
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
14200
191
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
D
= Constant, V = 0 to 400 V,
3040
OSS(tr)
DS
= 0 V
V
GS
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 to 400 V, V = 0 V
−
−
−
−
−
322
265
−
−
−
−
−
OSS(er)
DS
GS
Q
V
= 400 V, I = 37.5 A,
nC
G(TOT)
DD D
V
GS
= 10 V
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
Q
60.5
72.7
1.07
GS
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
−
−
−
−
57.9
22
−
−
−
−
ns
d(ON)
GS
D
DD
I
= 37.5 A, R = 2.2 W
G
t
r
Turn−Off Delay Time
Fall Time
t
167
4.76
d(OFF)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
I
= 37.5 A, V = 0 V, T = 25°C
−
−
−
−
1.2
−
V
SD
RR
SD
GS
J
t
V
= 0 V, I = 37.5 A,
490
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
11780
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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2
NTHL017N60S5H
TYPICAL CHARACTERISTICS
1000
VDS=20V
140
120
100
80
=25°C
TJ
100
60
10
VGS=4V
40
VGS=4.5V
VGS=5V
V
GS=6V
T
J=−55°C
20
V
GS=7V
T
J=25°C
VGS=10V
T
J=150°C
0
1
0
5
10
15
20
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
35
30
25
20
15
10
5
1000
100
10
T
VGS=0V
J=25°C
1
T
J=150°C
V
GS=10V
T
J=25°C
V
GS=20V
T
J=−55°C
0
0.1
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
1.2
ID, Drain Current (A)
VSD, Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
106
105
104
103
102
101
100
10−1
10
8
ID=37.5A
C
iss=Cgs+Cgd(Cds=shorted)
VGS=0V
Coss=Cds+Cgd
Crss=Cgd
T
J=25°C
f=250KHz
6
4
2
C
ISS
OSS
RSS
C
V
DD=130V
C
VDD=400V
0
0
100
200
300
400
500
600
0
50
100
150
200
250
300
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTHL017N60S5H
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
VGS=0V
ID=10mA
I
D =37.5A
VGS=10V
2.5
2
1.05
1
1.5
1
0.95
0.9
0.5
0.85
0.8
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T
T
J, Junction Temperature (°C)
J, Junction Temperature (°C)
Figure 8. On−Resistance Variation vs.
Figure 7. Breakdown Voltage Variation vs.
Temperature
Temperature
80
70
60
50
40
30
20
10
0
=25°C
TC
T
J=150°C
Single Pulse
102
101
Limited by RDS(ON)
100
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=DC
10−1
0.1
1
10
100
1000
25
50
75
100
125
150
VDS, Drain to Source Voltage (V)
T
C, Case Temperature (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
45
40
35
30
25
20
15
10
5
EOSS
0
0
100
200
300
400
500
600
VDS, Drain to Source Voltage (V)
Figure 11. Eoss vs. Drain−to−Source Voltage
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4
NTHL017N60S5H
TYPICAL CHARACTERISTICS
1
D=0 is Single Pulse
0.1
0.01
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
ZθJC(t)=0.2°C/W Max
PPDM
T
=PDM xZθJC(t)+T
JM
C
t1
Duty Cycle,D=t1/t2
t2
0.001
10−5
10−4
10−3
t, Rectangular Pulse Duration (s)
10−2
10−1
100
Figure 12. Transient Thermal Impedance
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5
NTHL017N60S5H
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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6
NTHL017N60S5H
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