NTNS3C94NZT5G [ONSEMI]
Small Signal MOSFET;
ONSEMI 
NTNS3C94NZ
Small Signal MOSFET
12 V, 384 mA, Single N−Channel,
0.62 x 0.62 x 0.4 mm XLLGA3 Package
Features
• Single N−Channel MOSFET
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MOSFET
• Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)
• Low R
Solution in 0.62 x 0.62 mm Package
DS(on)
• 1.8 V Gate Voltage Rating
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
0.48 W @ 4.5 V
0.54 W @ 3.7 V
0.60 W @ 3.3 V
0.80 W @ 2.5 V
1.90 W @ 1.8 V
Compliant
Applications
12 V
384 mA
• Small Signal Load Switch
• Analog Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Products
N−Channel MOSFET
D (3)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Value
12
Units
V
V
DSS
V
GS
8
V
G (1)
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
I
384
277
413
120
mA
A
D
T = 85°C
A
S (2)
t ≤ 5 s
T = 25°C
A
Power Dissipa-
tion (Note 1)
Steady
State
T = 25°C
A
P
mW
D
MARKING
DIAGRAM
t ≤ 5 s
T = 25°C
140
115
A
1
3
XLLGA3
CASE 713AE
Pulsed Drain Current
t = 10 ms
p
I
A
E M
DM
2
Operating Junction and Storage
Temperature
T ,
-55 to
150
°C
J
1
T
STG
E
= Specific Device Code
Source Current (Body Diode) (Note 2)
I
157
260
mA
S
M = Date Code
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
8000 /
Tape & Reel
THERMAL RESISTANCE RATINGS
NTNS3C94NZT5G
XLLGA3
(Pb−Free)
Parameter
Symbol
Max
1040
900
Units
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 5 s (Note 1)
R
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
θJA
R
θJA
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
2
(or 2 mm ), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
December, 2016 − Rev. 1
NTNS3C94NZ/D
NTNS3C94NZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
12
V
(BR)DSS
D
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, ref to 25°C
D
11
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 9.6 V
T = 25°C
100
10
nA
DSS
GS
J
V
DS
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
DS
= 0 V, V =
GS
10 V
mA
GSS
V
V
GS
= V , I = 250 mA
0.4
1.0
V
GS(TH)
DS
D
Negative Gate Threshold
Temperature Coefficient
V
/T
0.8
mV/°C
GS(TH)
J
Drain-to-Source On Resistance
R
W
V
= 4.5 V, I = 100 mA
0.35
0.40
0.43
0.55
1.0
0.48
0.54
0.60
0.80
1.9
DS(on)
GS
D
V
= 3.7 V, I = 75 mA
D
GS
GS
GS
GS
GS
DS
V
= 3.3 V, I = 75 mA
D
V
V
V
V
= 2.5 V, I = 50 mA
D
= 1.8 V, I = 20 mA
D
= 1.5 V, I = 10 mA
1.8
D
Forward Transconductance
Source−Drain Diode Voltage
CHARGES & CAPACITANCES
Input Capacitance
g
= 5 V, I = 100 mA
0.6
S
V
FS
D
V
SD
V
= 0 V, I = 100 mA
0.76
1.0
GS
S
pF
nC
C
35
6.0
4.1
0.6
0.1
0.1
0.1
ISS
V
= 0 V, f = 1 MHz,
GS
Output Capacitance
C
C
OSS
RSS
V
DS
=9. 6 V
Reverse Transfer Capacitance
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
GS
= 4.5 V, V = 9.6 V,
DS
I
D
= 100 mA
Q
GS
GD
Q
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)
ns
Turn-On Delay Time
Rise Time
t
7.0
6.3
152
80
d(ON)
t
r
V
= 4.5 V, V = 9.6 V,
DD
GS
I
D
= 100 mA, R = 2 W
G
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTNS3C94NZ
TYPICAL CHARACTERISTICS
0.36
0.32
0.28
0.24
0.20
0.16
0.40
V
= 2.5 V to 4.5 V
T = −55°C
T = 125°C
J
V
DS
= 10 V
GS
J
0.35
0.30
0.25
0.20
0.15
0.10
V
GS
= 2.0 V
T = 25°C
J
V
= 1.8 V
GS
V
= 1.5 V
= 1.2 V
GS
0.12
0.08
0.04
0.00
V
GS
0.05
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2500
2000
3000
2500
T = 25°C
J
T = 25°C
J
I
D
= 0.075 A
2000
1500
1000
1500
1000
500
0
V
GS
= 1.8 V
V
V
= 2.5 V
= 4.5 V
GS
500
0
GS
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5 5.0
0.1
0.2
0.3
0.4
0.5
0.6
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
1.4
100
10
V
= 10 V
= 0.075 A
GS
I
D
1.3
1.2
1.1
1.0
0.9
0.8
T = 125°C
J
1
0.1
T = 85°C
J
0.7
0.6
−50 −25
0.01
0
25
50
75
100
125
150
5
6
7
8
9
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
11
12
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTNS3C94NZ
TYPICAL CHARACTERISTICS
4.5
4.0
3.5
3.0
2.5
2.0
100
C
ISS
C
OSS
10
Q
Q
GS
GD
C
RSS
1.5
1.0
V
I
= 9.6 V
= 0.1 A
V
GS
= 0 V
DS
f = 1 MHz
T = 25°C
J
0.5
0
D
T = 25°C
J
1
0
2
4
6
8
10
12
0
0.1
0.2
0.3
0.4
0.5
0.6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
1
V
V
= 4.5 V
= 9.6 V
V
GS
= 0 V
GS
DS
I
D
= 0.1 A
t
d(off)
100
10
1
t
f
t
d(on)
t
r
T = 125°C T = 25°C
J
J
T = −55°C
J
0.1
0.5
1
10
R , GATE RESISTANCE (W)
100
0.6
0.7
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.8
0.9
1.0
1.1
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
0 V ≤ V ≤ 4.5 V
GS
Single Pulse
T = 25°C
T = 150°C
J
A
1
10 ms
100 ms
1 ms
0.1
10 ms
dc
0.01
R
Limit
DS(on)
Thermal Limit
Package Limit
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTNS3C94NZ
TYPICAL CHARACTERISTICS
10000
1000
100
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 12. FET Thermal Response
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5
NTNS3C94NZ
PACKAGE DIMENSIONS
XLLGA3, 0.62x0.62
CASE 713AE
ISSUE O
A
D
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
PIN ONE
REFERENCE
2. CONTROLLING DIMENSION: MILLIMETERS.
E
MILLIMETERS
0.10 C
DIM MIN
0.340 0.440
A1 0.000 0.030
0.100 0.200
b1 0.150 0.250
MAX
A
0.10 C
0.10 C
0.10 C
b
TOP VIEW
D
D2
D3
E
0.620 BSC
0.175 BSC
0.205 BSC
0.620 BSC
A
E2 0.400 0.600
e
e1
L
0.200 BSC
0.175 BSC
0.090 0.210
3X
A1
SEATING
PLANE
C
L2 0.110 0.310
SIDE VIEW
RECOMMENDED
SOLDER FOOTPRINT*
D3
e1
2X
D2
0.300
b1
E2
0.200
2
0.600
3
1
3
0.600
1
M
M
0.10
0.05
C A
C
B
e
L2
2
b
0.360
0.760
2X
L
ALL 3 PADS
0.250
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTNS3C94NZ/D
◊
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