NTNS4C69N [ONSEMI]
Small Signal MOSFET;
ONSEMI 
NTNS4C69N
Small Signal MOSFET
30 V, 866 mA, Single N−Channel SOT−883
(XDFN3) 1.0 x 0.6 x 0.4 mm Package
Features
• Single N−Channel MOSFET
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MOSFET
• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for
Extremely Thin Environments such as Portable Electronics
• Low R
Solution in Ultra Small 1.0 x 0.6 mm Package
DS(on)
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• 1.8 V Gate Drive
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
0.155 W @ 4.5 V
0.168 W @ 3.7 V
Compliant
30 V
0.180 W @ 3.3 V
0.220 W @ 2.5 V
0.450 W @ 1.8 V
866 mA
Applications
• High Side Switch
• High Speed Interfacing
• Level Shift and Translate
• Optimized for DC−DC Converter Power Management in Ultra
N−Channel MOSFET
Portable Solutions
D (3)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Value
30
Units
V
G (1)
V
DSS
V
GS
12
V
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
I
866
624
887
178
mA
A
D
S (2)
T = 85°C
A
t ≤ 5 s
T = 25°C
A
MARKING
DIAGRAM
Power Dissipa-
tion (Note 1)
Steady
State
T = 25°C
A
P
mW
D
3
SOT−883
(XDFN3)
CASE 506CB
t ≤ 5 s
T = 25°C
A
187
2.6
AA M
Pulsed Drain Current
t = 10 ms
p
I
mA
DM
1
2
Operating Junction and Storage
Temperature
T ,
STG
-55 to
150
°C
J
AA = Specific Device Code
= Date Code
T
M
Source Current (Body Diode) (Note 2)
I
187
260
mA
S
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
8000 /
Tape & Reel
NTNS4C69NTCG
SOT−883
(Pb−Free)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
703
670
Units
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 5 s (Note 1)
R
°C/W
θJA
R
θJA
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
2
(or 2 mm ), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
February, 2017 − Rev. 2
NTNS4C69N/D
NTNS4C69N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, ref to 25°C
D
17
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 24 V
T = 25°C
J
1.0
mA
DSS
GS
DS
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 12 V
100
nA
GSS
DS
GS
V
V
= V , I = 10 mA
0.65
1.1
V
GS(TH)
GS
DS
D
Negative Gate Threshold
Temperature Coefficient
V
/T
−3.0
mV/°C
GS(TH)
J
Drain-to-Source On Resistance
R
W
V
V
V
V
V
= 4.5 V, I = 300 mA
0.127
0.135
0.140
0.170
0.300
2.0
0.155
0.168
0.180
0.220
0.450
DS(on)
GS
GS
GS
GS
GS
D
= 3.7 V, I = 250 mA
D
= 3.3 V, I = 200 mA
D
= 2.5 V, I = 150 mA
D
= 1.8 V, I = 100 mA
D
Forward Transconductance
Source−Drain Diode Voltage
CHARGES & CAPACITANCES
Input Capacitance
g
V
= 5 V, I = 200 mA
S
V
FS
DS
D
V
SD
V
= 0 V, I = 100 mA
0.7
1.0
GS
S
pF
nC
C
75
34
ISS
V
= 0 V, f = 1 MHz,
GS
Output Capacitance
C
C
OSS
RSS
V
DS
= 15 V
Reverse Transfer Capacitance
Total Gate Charge
3.0
0.9
0.1
0.2
0.1
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
GS
= 4.5 V, V = 15 V,
DS
I
D
= 200 mA
Q
GS
GD
Q
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)
ns
Turn-On Delay Time
Rise Time
t
4.5
3.5
9.0
7.0
d(ON)
t
r
V
I
= 4.5 V, V = 15 V,
DD
GS
= 200 mA, R = 2 W
D
G
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTNS4C69N
TYPICAL CHARACTERISTICS
4.5
5
4
3
2
V
= 4.5 V to 2.9 V
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
DS
= 5 V
2.5 V
2.2 V
T = 25°C
J
2.0 V
1.8 V
1
0
0.5
0
1.6 V
1.4 V
T = 125°C
J
T = −55°C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
450
400
350
300
250
200
400
380
360
340
320
300
280
260
240
220
200
180
160
T = 25°C
J
T = 25°C
D
J
V
= 1.8 V
GS
I
= 0.3 A
V
GS
= 3.7 V
V
V
= 2.5 V
= 3.3 V
GS
GS
150
100
140
120
100
V
GS
= 4.5 V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I , DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
1.5
1.4
1.3
1.2
10,000
1000
100
10
V
= 10 V
= 0.3 A
GS
T = 150°C
J
I
D
T = 125°C
J
T = 85°C
J
1.1
1.0
0.9
1
0.1
T = 25°C
J
0.8
0.7
0.01
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTNS4C69N
TYPICAL CHARACTERISTICS
1000
100
10
V
= 0 V
GS
V
= 15 V
= 0.2 A
9
8
7
6
5
4
3
2
DS
T = 25°C
J
I
D
f = 1 MHz
T = 25°C
J
C
C
iss
oss
10
1
C
rss
Q
GS
Q
GD
1
0
0
5
10
15
20
25
30
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
1
V
GS
= 0 V
V
V
= 4.5 V
= 15 V
GS
DS
I
D
= 0.2 A
0.1
t
t
d(off)
10
T = 125°C
J
T = 25°C
J
T = −55°C
J
t
f
d(on)
0.01
t
r
1
0.001
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
1
10 ms
100 ms
1 ms
0.1
0 V ≤ V ≤ 10 V
GS
Single Pulse
10 ms
dc
T = 25°C
A
T = 150°C
0.01
J
R
Limit
DS(on)
Thermal Limit
Package Limit
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Safe Operating Area
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4
NTNS4C69N
TYPICAL CHARACTERISTICS
1000
100
50% Duty Cycle
20%
10%
5%
2%
10
1%
1
Single Pulse
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Characteristics
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5
NTNS4C69N
PACKAGE DIMENSIONS
SOT−883 (XDFN3), 1.0x0.6, 0.35P
CASE 506CB
ISSUE A
NOTES:
A B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
PIN ONE
REFERENCE
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
E
MILLIMETERS
0.10
0.10
C
C
DIM MIN
0.340 0.440
A1 0.000 0.030
MAX
A
TOP VIEW
b
D
D2
e
0.075 0.200
0.950 1.075
0.620 BSC
0.350 BSC
0.550 0.675
NOTE 3
A
C
0.10
0.10
C
E
E2 0.425 0.550
0.170 0.300
L
C
3X
A1
SIDE VIEW
SEATING
PLANE
RECOMMENDED
SOLDER FOOTPRINT*
1.10
D2
0.41
2X
0.43
1
0.55
E2
e/2
1
e
2X
PACKAGE
OUTLINE
0.20
3X
L
2X
b
DIMENSIONS: MILLIMETERS
M
M
0.10
0.05
C A B
C
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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NTNS4C69N/D
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