NTNS41006PZTCG [ONSEMI]
Small Signal MOSFET;NTNS41006PZ
Small Signal MOSFET
−30 V, −130 mA, Single P−Channel,
0.62 x 0.62 x 0.4 mm XLLGA3 Package
Features
• Single P−Channel MOSFET
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MOSFET
• Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)
• Low R
Solution in 0.62 x 0.62 mm Package
DS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Compliant
4.0 W @ −10 V
7.0 W @ −4.5 V
Applications
−30 V
−130 mA
• Small Signal Load Switch
• Analog Switch
• High Speed Interfacing
P−Channel MOSFET
• Optimized for Power Management in Ultra Portable Products
D (3)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Value
−30
Units
V
V
DSS
G (1)
V
GS
20
V
Continuous Drain
Current (Note 1)
Steady
State
T = 25°C
I
D
−137
−99
mA
A
S (2)
T = 85°C
A
t ≤ 5 s
T = 25°C
−148
121
A
MARKING
DIAGRAM
Power Dissipa-
tion (Note 1)
Steady
State
T = 25°C
A
P
D
mW
1
3
XLLGA3
CASE 713AA
t ≤ 5 s
T = 25°C
140
J M
2
A
Pulsed Drain Current
t = 10 ms
p
I
−550
mA
DM
1
Operating Junction and Storage
Temperature
T ,
-55 to
150
°C
J
J
= Specific Device Code
T
STG
M = Date Code
Source Current (Body Diode)
I
−137
260
mA
S
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
ORDERING INFORMATION
†
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NTNS41006PZTCG
Package
Shipping
8000 /
Tape & Reel
XLLGA3
(Pb−Free)
THERMAL RESISTANCE RATINGS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Parameter
Symbol
Max
1035
895
Units
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 5 s (Note 1)
R
°C/W
θJA
R
θJA
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
2
(or 2 mm ), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
May, 2017 − Rev. 1
NTNS41006PZ/D
NTNS41006PZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−30
V
(BR)DSS
D
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I
D
= −250 mA, ref to 25°C
32
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
= 0 V,
= −24 V
T = 25°C
−1.0
2.0
mA
mA
DSS
GS
J
V
DS
Gate-to-Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
= 12 V
GSS
DS
GS
V
V
= V , I = −250 mA
−1.0
−3.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Co-
efficient
V
/T
4.0
mV/°C
GS(TH)
J
Drain-to-Source On Resistance
R
W
V
= −10 V, I = −100 mA
2.1
3.3
4.0
7.0
DS(on)
GS
D
V
= −4.5 V, I = −50 mA
D
GS
Forward Transconductance
Source−Drain Diode Voltage
CHARGES & CAPACITANCES
Input Capacitance
g
V
= −5 V, I = −50 mA
0.14
−0.8
S
V
FS
DS
D
V
V
= 0 V, I = −50 mA
−1.0
SD
GS
S
pF
C
9.1
3.2
1.9
1.4
ISS
V
= 0 V, f = 10 kHz,
GS
Output Capacitance
C
OSS
C
RSS
V
DS
= −15 V
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= −10 V, V = −15 V,
nC
nC
G(TOT)
DS
I
D
= −100 mA
Total Gate Charge
Q
0.7
0.3
0.4
0.1
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
GS
= −4.5 V, V = −15 V,
DS
I
D
= −100 mA
Q
GS
GD
Q
SWITCHING CHARACTERISTICS, VGS = −10 V (Note 3)
ns
ns
Turn-On Delay Time
Rise Time
t
22.5
33.1
d(ON)
t
r
V
= −10 V, V = −15 V,
GS
DD
I
D
= −100 mA, R = 2 W
G
Turn-Off Delay Time
Fall Time
t
178.9
101.3
d(OFF)
t
f
SWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 3)
Turn-On Delay Time
Rise Time
t
58.7
137.3
78.6
d(ON)
t
r
V
GS
= −4.5 V, V = −15 V,
DD
I
D
= −100 mA, R = 2 W
G
Turn-Off Delay Time
Fall Time
t
d(OFF)
t
f
99.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTNS41006PZ
TYPICAL CHARACTERISTICS
0.28
0.24
0.20
0.16
0.12
0.28
T = −55°C
J
V
GS
= −4 to −10 V
V
DS
= −5 V
T = 125°C
J
0.24
0.20
0.16
0.12
T = 25°C
J
−3.5 V
−3.0 V
0.08
0.08
−2.5 V
−2.0 V
0.04
0
0.04
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
4.0
3.5
3.0
2.5
2.0
V
GS
= −4.5 V
T = 25°C
J
T = 25°C
D
J
I
= −0.1 A
V
= −10 V
GS
1.5
1.0
1.5
1.0
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7 0.8
−V , GATE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= −10 V
= −0.1 A
GS
I
D
100
10
1
T = 150°C
J
T = 125°C
J
0.6
0.4
0.2
0
T = 85°C
J
0.1
T = 25°C
J
0.01
5
10
15
20
25
30
−50 −25
0
25
50
75
100 125 150
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTNS41006PZ
TYPICAL CHARACTERISTICS
100
10
Q
T
V
GS
= 0 V
9
8
7
6
5
4
3
2
T = 25°C
f = 10 kHz
J
C
iss
10
Q
GD
C
oss
Q
GS
V
= −15 V
DS
C
rss
T = 25°C
J
1
0
I
D
= −0.1 A
1
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
0.55
0.45
0.35
0.25
1000
V
V
= −10 V
= −15 V
= −0.1 A
GS
V
= 0 V
GS
DD
I
D
t
t
d(off)
t
f
100
T = 25°C
J
t
r
d(on)
0.15
0.05
T = 125°C
J
T = −55°C
J
10
1
10
R , GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1
10 ms
100 ms
0.1
1 ms
10 ms
dc
0.01
R
Limit
DS(on)
Thermal Limit
Package Limit
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTNS41006PZ
TYPICAL CHARACTERISTICS
1000
100
Duty Cycle = 0.5
0.20
0.10
0.05
0.02
0.01
10
1
Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 12. FET Thermal Response
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5
NTNS41006PZ
PACKAGE DIMENSIONS
XLLGA3, 0.62x0.62, 0.35P
CASE 713AA
ISSUE B
A
D
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
PIN ONE
REFERENCE
2. CONTROLLING DIMENSION: MILLIMETERS.
E
MILLIMETERS
0.10 C
DIM MIN
0.340 0.440
A1 0.000 0.030
MAX
A
0.10 C
0.10 C
0.10 C
b
D
D2
D3
E
0.100 0.200
0.620 BSC
0.175 BSC
0.205 BSC
0.620 BSC
TOP VIEW
E2 0.400 0.600
A
e
K
L
0.350 BSC
0.200 REF
0.090 0.210
3X
A1
L2 0.110 0.310
SEATING
PLANE
C
SIDE VIEW
MINIMUM RECOMMENDED
SOLDER FOOTPRINT*
D3
e/2
e
2X
D2
0.20
E2
2
0.60
3
1
3
2X
1
0.20
M
M
0.10
0.05
C A
C
B
L2
2
2X b
K
0.28
0.62
0.35
PITCH
M
M
0.10
0.05
C A
B
2X
L
C
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTNS41006PZ/D
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NTNUS3171PZT5G
150mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, ULTRA SMALL, ULTRA THIN, CASE 524AA-01, 3 PIN
ROCHESTER
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