NVD4808NT4G [ONSEMI]
Power MOSFET 30 V, 63 A, Single NâChannel, DPAK/IPAK;
| 型号： | NVD4808NT4G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 V, 63 A, Single NâChannel, DPAK/IPAK 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD4808N, NVD4808N
Power MOSFET
30 V, 63 A, Single N−Channel, DPAK/IPAK
Features
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
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• Optimized Gate Charge to Minimize Switching Losses
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
8.0 mW @ 10 V
30 V
63 A
12.4 mW @ 4.5 V
Applications
D
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
G
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
S
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
30
Unit
N−CHANNEL MOSFET
V
DSS
V
V
A
V
GS
20
4
Continuous Drain
Current R
I
D
T = 25°C
13.8
A
4
q
JA
T = 85°C
A
10.7
2.63
(Note 1)
Power Dissipation
(Note 1)
2
T = 25°C
A
P
D
W
A
1
1
R
3
q
JA
2
3
Continuous Drain
Current R
ID
T = 25°C
A
10
7.8
1.4
DPAK
IPAK
q
JA
CASE 369AA
STYLE 2
CASE 369D
STYLE 2
T = 85°C
A
Steady
State
(Note 2)
Power Dissipation
(Note 2)
T = 25°C
A
P
I
W
A
D
D
R
q
JA
Continuous Drain
Current R
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
63
49
MARKING DIAGRAMS
& PIN ASSIGNMENTS
D
q
JC
(Note 1)
Power Dissipation
(Note 1)
4
P
54.6
W
A
Drain
4
R
q
JC
Drain
Pulsed Drain
Current
t =10ms
p
T = 25°C
A
I
DM
126
45
Current Limited by Package
T = 25°C
A
I
A
DmaxPkg
Operating Junction and Storage
Temperature
T ,
STG
−55 to
°C
J
T
+175
2
Source Current (Body Diode)
Drain to Source dV/dt
I
S
45
6
A
Drain
1
3
Gate Source
dV/dt
EAS
V/ns
mJ
1
2
3
Gate Drain Source
Single Pulse Drain−to−Source Avalanche
Energy (V = 24 V, V = 10 V,
144.5
DD
GS
Y
WW
= Year
= Work Week
I = 17 A , L = 1.0 mH, R = 25 W)
L
pk
G
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
4808N = Device Code
G
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2012 − Rev. 7
NTD4808N/D
NTD4808N, NVD4808N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.75
3.5
Unit
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
R
q
JC
R
q
JC−TAB
°C/W
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
R
R
57
q
q
JA
JA
107
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
27
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
1
DSS
GS
DS
J
V
= 24 V
mA
T = 125°C
J
10
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.5
2.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
5.6
GS(TH)
J
mV/°C
Drain−to−Source On Resistance
R
V
GS
= 10 to 11.5 V
I
I
I
= 30 A
= 15 A
= 30 A
= 15 A
6.7
6.6
8.0
DS(on)
D
D
D
mW
V
GS
= 4.5 V
10.3
9.8
12.4
I
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
= 15 V, I = 15 A
11.4
S
FS
DS
D
C
1538
334
180
11.3
1.6
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 12 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
13
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
GS
= 4.5 V, V = 15 V; I = 30 A
nC
nC
DS
D
Q
4.9
GS
GD
Q
4.9
Q
t
V
= 11.5 V, V = 15 V;
26
G(TOT)
GS
DS
= 30 A
I
D
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
12.3
21.3
14.6
6.0
d(ON)
t
r
V
GS
= 4.5 V, V = 15 V, I = 15 A,
DS D
ns
R
= 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4808N, NVD4808N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
7.7
19.5
23
d(ON)
Rise Time
t
r
V
V
= 11.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.93
0.83
20
1.2
J
= 0 V,
= 30 A
GS
V
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
10.4
9.6
ns
nC
nH
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Q
9.7
RR
L
L
L
2.49
0.0164
1.88
S
D
D
G
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
T = 25°C
A
L
3.46
Gate Resistance
R
1.1
W
G
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD4808N, NVD4808N
TYPICAL PERFORMANCE CURVES
100
90
80
5.5 V to 10 V
4.5 V
T = 25°C
V
DS
≥ 10 V
J
70
60
80
70
60
50
40
30
20
50
40
30
20
4 V
3.8 V
3.6 V
3.4 V
T = 125°C
J
3.2 V
3 V
T = 25°C
J
10
0
10
0
T = −55°C
J
0
1
2
3
4
5
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9.6
9.2
8.8
8.4
8.0
7.6
0.020
0.018
I
= 30 A
T = 25°C
D
J
T = 25°C
J
0.016
0.014
0.012
0.010
0.008
0.006
0.004
V
= 4.5 V
GS
7.2
6.8
6.4
6.0
V
GS
= 11.5 V
35 40
0.002
0
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5 10 10.5 11 11.5
10 15
20 25 30
50 55 60
45
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
10000
1000
1.8
V
= 0 V
GS
1.7
1.6
1.5
1.4
1.3
I
V
= 30 A
D
= 10 V
GS
T = 150°C
J
T = 125°C
J
100
10
1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
T = 25°C
J
0.1
−50 −25
0
25
50
75 100 125 150 175
5
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Drain Voltage
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4
NTD4808N, NVD4808N
TYPICAL PERFORMANCE CURVES
2000
1500
1000
5
Q
T = 25°C
J
T
Q
Q
1
4
2
C
iss
3
2
V
V
= 15 V
= 4.5 V
= 30 A
500
0
DD
GS
C
C
oss
1
0
I
D
T = 25°C
J
rss
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
9
10 11 12
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and Drain−To−Source
Figure 7. Capacitance Variation
Voltage vs. Total Charge
30
25
20
15
10
100
V
= 0 V
GS
T = 25°C
J
t
r
t
d(off)
10
t
d(on)
t
f
V
DD
= 15 V
5
0
I
V
= 30 A
D
= 11.5 V
GS
1
1
10
R , GATE RESISTANCE (OHMS)
100
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
90
V
= 20 V
GS
I = 17 A
D
SINGLE PULSE
= 25°C
T
C
80
10 ms
70
60
50
40
30
100 ms
1 ms
R
LIMIT
DS(on)
20
10 ms
dc
THERMAL LIMIT
PACKAGE LIMIT
10
0
50
1
0.1
1
10
100
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTD4808N, NVD4808N
TYPICAL PERFORMANCE CURVES
100
10
1
25°C
100°C
125°C
1
10
100
1000
PULSE WIDTH (ms)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.05
0.02
P
(pk)
0.1
R
(t) = r(t) R
q
JC
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
SINGLE PULSE
t
1
1
t
2
T
J(pk)
− T = P
R
q
(t)
JC
C
(pk)
DUTY CYCLE, D = t /t
1
2
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t, TIME (ms)
1.0E-01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
NTD4808NT4G
DPAK
2500 / Tape & Reel
75 Units / Rail
(Pb−Free)
NTD4808N−1G
IPAK
(Pb−Free)
NVD4808NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4808N, NVD4808N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
PLANE
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
3.00
0.244
0.118
2.58
0.102
5.80
1.60
0.063
6.17
0.228
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NTD4808N, NVD4808N
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
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NTD4808N/D
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