NVD4815NT4G [ONSEMI]
单 N 沟道,功率 MOSFET,30V,35A,15mΩ;型号: | NVD4815NT4G |
厂家: | ONSEMI |
描述: | 单 N 沟道,功率 MOSFET,30V,35A,15mΩ |
文件: | 总8页 (文件大小:294K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTD4815N
Power MOSFET
30 V, 35 A, Single N--Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices
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V
R
MAX
I
MAX
D
(BR)DSS
DS(ON)
Applications
15 mΩ @ 10 V
25 mΩ @ 4.5 V
30 V
35 A
• CPU Power Delivery
• DC--DC Converters
• High Side Switching
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Value
Unit
G
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
V
30
±20
8.5
V
V
A
DSS
V
GS
S
I
T
= 25°C
= 85°C
= 25°C
D
A
N--CHANNEL MOSFET
Current R
(Note 1)
θ
JA
T
A
6.5
4
4
Power Dissipation
(Note 1)
T
A
P
1.92
W
A
D
4
R
θ
JA
Continuous Drain
ID
T
A
= 25°C
= 85°C
= 25°C
6.9
5.3
Current R
(Note 2)
θ
JA
2
1
1
T
A
Steady
State
1
2
3
3
2
Power Dissipation
(Note 2)
T
A
P
I
1.26
W
A
3
D
D
R
θ
CASE 369AC
3 IPAK
(Straight Lead)
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
CASE 369D
IPAK
(Straight Lead
DPAK)
JA
Continuous Drain
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
35
27
D
Current R
(Note 1)
θ
JC
Power Dissipation
(Note 1)
P
32.6
W
A
R
θ
JC
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Pulsed Drain
Current
t =10ms
p
T
A
= 25°C
= 25°C
I
DM
87
35
4
Drain
Current Limited by Package
T
A
I
A
DmaxPkg
4
4
Drain
Operating Junction and Storage
Temperature
T ,
-- 5 5 t o
+175
°C
Drain
J
T
STG
Source Current (Body Diode)
Drain to Source dV/dt
I
27
6
A
S
dV/dt
EAS
V/ns
mJ
Single Pulse Drain--to--Source Avalanche
Energy (V = 24 V, V = 10 V,
60.5
DD
GS
2
I = 11 A , L = 1.0 mH, R = 25 Ω)
1
2
3
L
pk
G
Drain
1
3
Gate Drain Source
Gate Source
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
1
2
3
Gate Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
WW
= Year
= Work Week
4815N = Device Code
= Pb--Free Package
G
ORDERING INFORMATION
Seedetailedorderingandshippinginformationinthepackage
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
June, 2010 -- Rev. 5
NTD4815N/D
NTD4815N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.6
Unit
Junction--to--Case (Drain)
R
θ
°C/W
JC
Junction--to--TAB (Drain)
R
θ
3.5
JC--TAB
Junction--to--Ambient – Steady State (Note 1)
Junction--to--Ambient – Steady State (Note 2)
R
R
78
θ
JA
JA
119
θ
1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
V
(BR)DSS
GS
D
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V
/
25
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25 °C
1
DSS
GS
DS
J
V
mA
T = 125°C
J
10
Gate--to--Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = ±20 V
±100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.5
2.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
J
5.6
GS(TH)
mV/°C
Drain--to--Source On Resistance
R
V
= 10 V to
I
I
I
= 30 A
= 15 A
= 30 A
= 15 A
12
11.5
21
15
25
DS(on)
GS
11.5 V
D
D
D
mΩ
V
= 4.5 V
GS
I
18.3
6.0
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
= 15 V, I = 10 A
S
FS
DS
D
C
770
181
108
6.0
ISS
Output Capacitance
C
C
V
= 0 V, f = 1.0 MHz, V = 12 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
6.6
G(TOT)
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
Q
0.9
G(TH)
V
= 4.5 V, V = 15 V; I = 30 A
nC
nC
GS
DS
D
Q
2.5
GS
Q
3.1
GD
Q
t
V
= 11.5 V, V = 15 V;
14.1
G(TOT)
GS
DS
I
= 30 A
D
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
Rise Time
10.5
21.4
11.4
3.5
d(ON)
t
r
V
= 4.5 V, V = 15 V, I = 15 A,
DS D
GS
ns
R
G
= 3.0 Ω
Turn--Off Delay Time
Fall Time
t
d(OFF)
t
f
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD4815N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
6.3
17.6
18.4
2.3
d(ON)
Rise Time
t
r
V
V
= 11.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 Ω
G
Turn--Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
1.0
0.92
15.3
8.7
1.2
SD
J
= 0 V,
= 30 A
GS
V
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
nC
nH
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
= 30 A
S
Discharge Time
t
6.6
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Q
5.5
RR
L
L
L
2.49
0.0164
1.88
S
D
D
G
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
T
A
= 25°C
L
3.46
Gate Resistance
R
G
2.6
Ω
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTD4815N
TYPICAL PERFORMANCE CURVES
60
80
5.5 V to 10 V
5 V
T = 25°C
V
≥ 10 V
DS
J
70
60
50
40
30
20
4.5 V
50
40
30
20
4 V
3.8 V
3.6 V
T = 125°C
J
3.4 V
3.2 V
3 V
T = 25°C
J
10
0
10
0
T = --55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
V
, GATE--TO--SOURCE VOLTAGE (VOLTS)
GS
DS
Figure 1. On--Region Characteristics
Figure 2. Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.030
0.025
0.020
T = 25°C
I
= 30 A
J
D
T = 25°C
J
V
= 4.5 V
GS
0.015
0.010
0.005
0
V
= 11.5 V
GS
0.005
0
2
3
4
5
6
7
8
9
10
11 12
5
10
15
20
25
30
V
, GATE--TO--SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPS)
D
GS
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
100,000
10,000
2.0
1.5
1.0
0.5
V
= 0 V
GS
I
V
= 30 A
D
= 10 V
GS
T = 175°C
J
1000
T = 125°C
J
100
10
--50 --25
0
25
50
75 100 125 150 175
4
8
12
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
DS
16
20
24
28
32
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On--Resistance Variation with
Temperature
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
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4
NTD4815N
TYPICAL PERFORMANCE CURVES
1500
1400
1300
1200
1100
1000
900
6
16
14
12
10
8
V
= 0 V
V
= 0 V
GS
DS
T = 25°C
J
V
DS
5
4
3
Q
T
C
iss
Q
Q
1
2
V
GS
C
iss
800
700
600
500
400
300
200
100
0
6
C
rss
2
1
0
4
C
oss
I
= 30 A
2
0
D
T = 25°C
J
C
rss
10
5
V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
V
DS
GS
Q , TOTAL GATE CHARGE (nC)
G
GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 8. Gate--To--Source and Drain--To--Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
30
1000
V
= 15 V
= 30 A
= 11.5 V
V
= 0 V
DD
GS
GS
I
D
T = 25°C
J
25
20
15
10
V
100
t
r
t
d(off)
10
1
t
d(on)
5
0
t
f
1
10
R , GATE RESISTANCE (OHMS)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
70
60
50
40
30
20
I
= 11 A
D
10 ms
100 ms
V
= 20 V
1 ms
GS
SINGLE PULSE
= 25°C
T
C
10 ms
dc
1
R
DS(on)
LIMIT
10
0
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
100
25
50
75
100
125
150
175
V
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTD4815N
TYPICAL PERFORMANCE CURVES
100
10
25°C
100°C
125°C
1
0.1
1
10
100
1000
PULSE WIDTH (ms)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.05
0.02
P
(pk)
0.1
R
(t) = r(t) R
θ
JC
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
SINGLE PULSE
t
1
1
t
2
T
J(pk)
-- T = P
R
θ
(t)
JC
C
(pk)
DUTY CYCLE, D = t /t
1
2
0.01
1.0E--05
1.0E--04
1.0E--03
1.0E--02
t, TIME (ms)
1.0E--01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
NTD4815NT4G
DPAK
2500 / Tape & Reel
75 Units / Rail
(Pb--Free)
NTD4815N--1G
NTD4815N--35G
IPAK
(Pb--Free)
IPAK Trimmed Lead
(3.5 0.15 mm)
(Pb--Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4815N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 90° CW
L4
Z
-- -- -- 0 . 0 4 0
0.155 ------
-- -- --
3.93
1 . 0 1
------
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
3.00
0.244
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NTD4815N
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC--01
ISSUE O
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
B
R
C
V
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.09
A
B
C
D
E
F
G
H
J
K
R
V
W
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
A
K
SEATING PLANE
W
2.29 BSC
F
0.87
0.46
3.40
4.57
0.89
1.01
0.58
3.60
5.46
1.27
0.25
J
G
H
D 3 PL
0.000 0.010 0.000
0.13 (0.005) W
IPAK (STRAIGHT LEAD DPAK)
CASE 369D--01
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
S
1
3
-- T --
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
------
J
F
H
0.155
------
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
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NTD4815N/D
相关型号:
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