NVH4L022N120M3S_技术文档

DATA SHEET

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Silicon Carbide (SiC)

MOSFET – EliteSiC,

22 mohm, 1200ꢀV, M3S,

TO-247-4L

V

R

MAX

I MAX

D

(BR)DSS

DS(ON)

1200 V

30 mꢀ @ 18 V

89 A

D

NVH4L022N120M3S

Features

G

• Typ. R

= 22 mꢀ @ V = 18 V

GS

DS(on)

S1: Driver Source

S2: Power Source

• Ultra Low Gate Charge (Q

= 137 nC)

G(tot)

S1

S2

• High Speed Switching with Low Capacitance (C = 146 pF)

oss

N−CHANNEL MOSFET

• 100% Avalanche Tested

• AEC−Q101 Qualified and PPAP Capable

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• Automotive On Board Charger

• Automotive DC-DC Converter for EV/HEV

D

S2

S1

G

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

TO−247−4L

CASE 340CJ

J

Parameter

Drain−to−Source Voltage

Symbol

Value

1200

Unit

V

DSS

MARKING DIAGRAM

Gate−to−Source Voltage

V

−10/+22

−3/+18

V

GS

Recommended Operation Values

of Gate−to−Source Voltage

T

< 175°C

= 25°C

V

GSop

V

C

Continuous Drain

Current (Notes 1, 3)

Steady

State

T

I

89

348

62

A

W

A

H4L022

120m3s

AYWWZZ

C

D

Power Dissipation

(Note 1)

P

D

Continuous Drain

Current (Notes 1, 3)

Steady

State

T

C

= 100°C

I

D

H4L022120M3S = Specific Device Code

Power Dissipation

(Note 1)

P

174

275

W

A

D

A

Y

= Assembly Location

= Year

Pulsed Drain Current

(Note 2)

T

C

= 25°C

I

DM

WW = Work Week

ZZ

= Lot Traceability

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

A

J

stg

+175

ORDERING INFORMATION

Source Current (Body Diode)

I

S

72

T

C

= 25°C V = −3 V (Note 1)

GS

Device

Package

Shipping

Single Pulse Drain−to−Source Avalanche

Energy (I = 23.1 A, L = 1 mH) (Note 4)

E

267

270

mJ

°C

AS

NVH4L022N120M3S TO−247−4L

30 Units /

Tube

L(pk)

Maximum Lead Temperature for Soldering

(1/25″ from case for 10 s)

T

L

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. The maximium current rating is based on typical R

performance.

AS

DS(on)

4. E of 267 mJ is based on starting T = 25°C; L = 1 mH, I = 23.1 A,

AS

DD

J

V

= 100 V, V = 18 V.

GS

1

Publication Order Number:

May, 2023 − Rev. 3

NVH4L022N120M3S/D

NVH4L022N120M3S

Table 1. THERMAL CHARACTERISTICS

Parameter

Symbol

Max

0.43

40

Unit

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 1)

R

°C/W

ꢁ

JC

JA

ꢁ

Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

J

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF−STATE CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

= 0 V, I = 1 mA

1200

−

V

(BR)DSS

GS

D

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

/T

I = 1 mA, referenced to 25°C

D

−

0.3

V/°C

(BR)DSS

J

(Note 6)

Zero Gate Voltage Drain Current

I

V

DS

= 0 V,

T = 25°C

−

100

1

ꢂ A

DSS

GS

J

V

= 1200 V

Gate−to−Source Leakage Current

ON−STATE CHARACTERISTICS

Gate Threshold Voltage

I

V

= +22/−10 V, V = 0 V

GSS

GS DS

V

R

V

= V , I = 20 mA

2.04

−3

−

2.72

−

4.4

+18

30

V

GS(TH)

GS

DS

D

Recommended Gate Voltage

Drain−to−Source On Resistance

V

GOP

V

= 18 V, I = 40 A, T = 25°C

22

44

mꢀ

DS(on)

GS

D

J

V

= 18 V, I = 40 A, T = 175°C

−

GS

D

J

(Note 6)

Forward Transconductance

g

FS

V

DS

= 10 V, I = 40 A (Note 6)

−

34

−

S

D

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

C

−

3175

146

14

−

pF

nC

ISS

Output Capacitance

C

V

= 0 V, f = 1 MHz, V = 800 V

DS

OSS

RSS

GS

Reverse Transfer Capacitance

Total Gate Charge

C

Q

137

9.2

15

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Gate−Resistance

Q

G(TH)

V

= −3/18 V, V = 800 V,

DS

GS

I

= 40 A

D

Q

GS

GD

34

R

f = 1 MHz

1.5

ꢀ

G

SWITCHING CHARACTERISTICS

Turn−On Delay Time

t

−

18

24

−

ns

d(ON)

Rise Time

t

r

Turn−Off Delay Time

t

48

d(OFF)

V

= −3/18 V, V = 800 V,

DS

GS

Fall Time

t

f

13

I

= 40 A, R = 4.5 ꢀ

D

G

Inductive Load (Notes 5, 6)

Turn−On Switching Loss

Turn−Off Switching Loss

Total Switching Loss

E

ON

490

221

711

ꢂ

J

E

OFF

E

tot

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Source−Drain Diode Forward

I

−

72

275

−

A

V

SD

Current (Note 1)

V

= −3 V, T = 25°C

GS

C

(Note 6)

Pulsed Source−Drain Diode Forward

Current (Note 2)

I

SDM

Forward Diode Voltage

V

GS

= −3 V, I = 40 A, T = 25°C

4.5

SD

J

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2

NVH4L022N120M3S

Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)

J

Parameter

SOURCE−DRAIN DIODE CHARACTERISTICS

Reverse Recovery Time

Symbol

Test Condition

Min

Typ

Max

Unit

t

−

22

138

5

−

ns

nC

ꢂ J

A

RR

Reverse Recovery Charge

Reverse Recovery Energy

Peak Reverse Recovery Current

Charge Time

Q

RR

V

S

= −3/18 V, I = 40 A,

E

I

GS

SD

REC

dI /dt = 1000 A/ꢂ s, V = 800 V

DS

13

9

(Note 6)

RRM

t

A

t

B

ns

Discharge Time

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. E /E

result is with body diode

ON OFF

6. Defined by design, not subject to production test.

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3

NVH4L022N120M3S

TYPICAL CHARACTERISTICS

2.0

200

150

100

50

12 V

V

GS

= 20 V to 15 V

1.5

12 V

1.0

0.5

V

GS

= 20 V to 15 V

T

C

= 25°C

T

C

= 25°C

0

1

2

3

4

5

6

7

8

9

10

0

40

80

I , DRAIN CURRENT (A)

120

160

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

D

Figure 1. On−Region Characteristics

Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

250

200

2.5

I

V

= 40 A

I

D

= 40 A

D

= 18 V

GS

2.0

150

100

50

1.5

1.0

0.5

0

T = 150°C

J

T = 25°C

J

0

−55 −30 −5

20

45

70

95 120 145 170

5

9

13

17

T , JUNCTION TEMPERATURE (°C)

J

V

, GATE−TO−SOURCE VOLTAGE (V)

GS

Figure 3. On−Resistance Variation with

Figure 4. On−Resistance vs. Gate−to−Source

Temperature

Voltage

500

400

300

200

100

80

E

tot

E

on

V

DS

= 10 V

60

E

off

40

T = 25°C

J

T = 175°C

J

R

= 4.5 ꢀ

= 800 V

= 18/−3 V

G

100

0

20

0

V

DD

V

GS

T = −55°C

J

5

10

15

20

25

30

35

40

45

3

6

9

12

15

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

D

Figure 5. Transfer Characteristics

Figure 6. Switching Loss vs. Drain Current

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4

NVH4L022N120M3S

TYPICAL CHARACTERISTICS (continued)

900

800

700

600

500

400

300

200

700

E

tot

I

V

= 20 A

R

= 4.5 ꢀ

= 40 A

= 18/−3 V

D

G

E

tot

= 800 V

600

500

400

300

200

I

D

DD

GS

= 18/−3 V

V

GS

E

on

E

on

E

off

E

off

100

0

100

0

500

600

700

800

900

1000

0

2

4

6

8

10

V

DD

(V)

R , GATE RESISTANCE (ꢀ)

G

Figure 7. Switching Loss vs. Drain Voltage

Figure 8. Switching Loss vs. Gate Resistance

500

400

300

200

300

100

V

GS

= −3 V

E

tot

E

on

T = 25°C

J

I

V

R

= 20 A

D

T = 175°C

J

= 800 V

DD

10

1

T = −55°C

J

= 4.5

ꢀ

G

V

= 18/−3 V

GS

E

off

100

0

25

50

75

100

125

150

175

1

3

5

7

9

TEMPERATURE (°C)

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

Figure 9. Switching Loss vs. Temperature

Figure 10. Diode Forward Voltage vs. Current

10000

18

15

12

9

C

I

D

= 40 A

iss

V

= 800 V

DD

1000

100

V

DD

= 400 V

C

oss

V

= 600 V

DD

6

C

rss

3

10

1

0

f = 1 MHz

= 0 V

V

GS

−3

0.1

1

10

100

800

0

30

60

90

120

150

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

g

Figure 11. Gate−to−Source Voltage vs. Total

Figure 12. Capacitance vs. Drain−to−Source

Charge

Voltage

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5

NVH4L022N120M3S

TYPICAL CHARACTERISTICS (continued)

100

80

60

40

20

V

GS

= 18 V

T = 25°C

J

T = 150°C

J

10

1

R

= 0.43°C/W

ꢁ

JC

0

0.001

0.01

0.1

1

25

50

75

100

125

150

175

t , TIME IN AVALANCHE (ms)

AV

T , CASE TEMPERATURE (°C)

C

Figure 13. Unclamped Inductive Switching

Capability

Figure 14. Maximum Continuous Drain

Current vs. Case Temperature

100000

10000

1000

Single Pulse

R

= 0.43°C/W

ꢁ

JC

T

C

= 25°C

100

10

1

10 ꢂ s

100 ꢂ s

1000

100

1 ms

10 ms

Single Pulse

T = Max Rated

J

R

= 0.43°C/W

ꢁ

JC

T

C

= 25°C

100 ms/DC

0.1

0.00001 0.0001

0.001

0.01

0.1

1

0.1

1

10

100

1000 2000

t, PULSE WIDTH (sec)

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 15. Safe Operating Area

Figure 16. Single Pulse Maximum Power

Dissipation

1

0.5 Duty Cycle

0.2

0.1

0.05

0.02

0.01

Notes:

P

0.01

DM

Z

ꢁ

(t) = r(t) x R

ꢁ

JC

Single Pulse

R

= 0.43°C/W

ꢁ

JC

t

Peak T = P

x Z (t) + T

ꢁ

JC C

1

J

DM

t

Duty Cycle, D = t /t

2

1

2

0.001

0.00001

0.0001

0.001

0.01

0.1

1

t, PULSE TIME (s)

Figure 17. Junction−to−Case Transient Thermal Response

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6

NVH4L022N120M3S

PACKAGE DIMENSIONS

TO−247−4LD

CASE 340CJ

ISSUE A

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7

NVH4L022N120M3S

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−4LD

CASE 340CJ

ISSUE A

DATE 16 SEP 2019

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13852G

TO−247−4LD

PAGE 1 OF 1

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