NVH4L075N065SC1 [ONSEMI]

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 57 mohm, 650 V, M2, TO247−4L;


型号：	NVH4L075N065SC1
厂家：	ONSEMI
描述：	Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 57 mohm, 650 V, M2, TO247−4L
文件：	总8页 (文件大小：341K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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Silicon Carbide (SiC)

MOSFET – 57 mohm, 650 V,

M2, TO-247-4L

MAX

I MAX

(BR)DSS

DS(ON)

650 V

85 mꢀ @ 18 V

38 A

NVH4L075N065SC1

Features

• Typ. R

= 57 mꢀ @ V = 18 V

= 75 mꢀ @ V = 15 V

DS(on)

S1: Kelvin Source

S2: Power Source

Typ. R

DS(on)

• Ultra Low Gate Charge (Q

= 61 nC)

G(tot)

S1 S2

• Low Output Capacitance (C = 107 pF)

oss

N−CHANNEL MOSFET

• 100% Avalanche Tested

• AEC−Q101 Qualified and PPAP Capable

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• Automotive On Board Charger

• Automotive DC-DC Converter for EV/HEV

TO247−4L

CASE 340CJ

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

650

Unit

DSS

MARKING DIAGRAM

Gate−to−Source Voltage

−8/+22

−5/+18

Recommended Operation Values

of Gate−to−Source Voltage

< 175°C

= 25°C

GSop

Continuous Drain

Current (Note 1)

Steady

State

148

H4L075

065SC1

AYWWZZ

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 1)

Steady

State

= 100°C

H4L075065SC1 = Specific Device Code

Power Dissipation

(Note 1)

= Assembly Location

= Year

Pulsed Drain Current

(Note 2)

= 25°C

120

WW = Work Week

= Lot Traceability

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

ORDERING INFORMATION

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Device

NVH4L075N065SC1

Package

Shipping

Energy (I

= 12.9 A, L = 1 mH) (Note 3)

L(pk)

TO247−4L

30 Units /

Tube

Maximum Lead Temperature for Soldering

(1/8″ from case for 5 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. EAS of 83 mJ is based on starting T = 25°C; L = 1 mH, I = 12.9 A,

= 50 V, V = 18 V.

Publication Order Number:

May, 2022 − Rev. 1

NVH4L075N065SC1/D

NVH4L075N065SC1

Table 1. THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 1)

Symbol

Max

1.01

Unit

°C/W

ꢁ

Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 1 mA

650

−

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

I = 20 mA, referenced to 25°C

−

0.15

V/°C

(BR)DSS

Zero Gate Voltage Drain Current

= 0 V,

T = 25°C

−

ꢂ A

DSS

= 650 V

T = 175°C

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

= +18/−5 V, V = 0 V

250

GSS

= V , I = 5 mA

1.8

−5

−

2.8

−

4.3

+18

−

GS(TH)

Recommended Gate Voltage

Drain−to−Source On Resistance

GOP

= 15 V, I = 15 A, T = 25°C

mꢀ

DS(on)

= 18 V, I = 15 A, T = 25°C

−

= 18 V, I = 15 A, T = 175°C

−

Forward Transconductance

= 10 V, I = 15 A

−

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

= 0 V, f = 1 MHz, V = 325 V

−

1196

107

−

ISS

Output Capacitance

OSS

RSS

Reverse Transfer Capacitance

Total Gate Charge

= −5/18 V, V = 520 V,

G(TOT)

= 15 A

Gate−to−Source Charge

Gate−to−Drain Charge

Gate−Resistance

f = 1 MHz

5.8

ꢀ

SWITCHING CHARACTERISTICS

Turn−On Delay Time

Rise Time

= −5/18 V, V = 400 V,

−

d(ON)

= 15 A, R = 2.2 ꢀ

Inductive load

Turn−Off Delay Time

d(OFF)

Fall Time

Turn−On Switching Loss

Turn−Off Switching Loss

Total Switching Loss

ꢂ

OFF

tot

DRAIN−SOURCE DIODE CHARACTERISTICS

Continuous Drain−Source Diode Forward

= −5 V, T = 25°C

−

120

−

Current

Pulsed Drain−Source Diode Forward

Current (Note 2)

SDM

Forward Diode Voltage

= −5 V, I = 15 A, T = 25°C

4.4

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NVH4L075N065SC1

Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)

Parameter

DRAIN−SOURCE DIODE CHARACTERISTICS

Reverse Recovery Time

Symbol

Test Condition

Min

Typ

Max

Unit

= −5/18 V, I = 15 A,

−

7.4

−

ꢂ J

dI /dt = 1000 A/ꢂ s

Reverse Recovery Charge

Reverse Recovery Energy

Peak Reverse Recovery Current

Charge Time

REC

RRM

Discharge time

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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NVH4L075N065SC1

TYPICAL CHARACTERISTICS

= 18 V

15 V

12 V

= 12 V

10 V

9 V

15 V

18 V

8 V

7 V

, DRAIN−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 1. On−Region Characteristics

Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

1.7

300

200

= 15 A

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

= 18 V

T = 25°C

T = 150°C

100

0.8

0.7

−75 −50 −25

25 50 75 100 125 150 175 200

T , JUNCTION TEMPERATURE (°C)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance Variation with

Figure 4. On−Resistance vs. Gate−to−Source

Temperature

Voltage

100

= 10 V

= −5 V

T = 25°C

T = 175°C

T = 25°C

T = 175°C

T = −55°C

, GATE−TO−SOURCE VOLTAGE (V)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Diode Forward Voltage vs. Current

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NVH4L075N065SC1

TYPICAL CHARACTERISTICS (continued)

10000

= 390 V

= 15 A

iss

= 520 V

1000

100

= 650 V

oss

rss

f = 1 MHz

= 0 V

−3

−6

0.1

100

650

175

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 7. Gate−to−Source Voltage vs. Total

Figure 8. Capacitance vs. Drain−to−Source

Charge

Voltage

100

= 18 V

T = 25°C

= 1.01°C/W

ꢁ

100

125

150

0.001

0.01

0.1

, TIME IN AVALANCHE (ms)

T , CASE TEMPERATURE (°C)

Figure 9. Unclamped Inductive Switching

Capability

Figure 10. Maximum Continuous Drain

Current vs. Case Temperature

300

100

20000

10000

Single Pulse

= 1.01°C/W

= 25°C

ꢁ

= 25°C

ꢁ

10 ꢂ s

100 ꢂ s

1000

100

10 ms

Limit

1 ms

DS(on)

Thermal Limit

Package Limit

100 ms/DC

100

, DRAIN−TO−SOURCE VOLTAGE (V)

0.1

0.00001 0.0001 0.001

0.01

0.1

1000

t, PULSE WIDTH (sec)

Figure 11. Safe Operating Area

Figure 12. Single Pulse Maximum Power

Dissipation

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NVH4L075N065SC1

TYPICAL CHARACTERISTICS (continued)

0.5 Duty Cycle

0.2

0.1

0.05

Notes:

= 1.01°C/W

0.02

ꢁ

Peak T = P

Duty Cycle, D = t /t

x Z (t) + T

ꢁ

JC C

0.01

Single Pulse

0.00001

0.01

0.0001

0.001

0.01

0.1

t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Junction−to−Case Thermal Response

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−4LD

CASE 340CJ

ISSUE A

DATE 16 SEP 2019

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13852G

TO−247−4LD

PAGE 1 OF 1

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NVH4L075N065SC1 [ONSEMI]

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