NVH4L060N090SC1 [ONSEMI]

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−4L;


型号：	NVH4L060N090SC1
厂家：	ONSEMI
描述：	Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−4L
文件：	总7页 (文件大小：917K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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Silicon Carbide (SiC)

MOSFET – 60 mohm, 900ꢀV,

M2, TO-247-4L

MAX

I MAX

(BR)DSS

DS(on)

900 V

84 mW @ 15 V

46 A

NVH4L060N090SC1

Features

• Typ. R

= 60 mW @ V = 15 V

= 43 mW @ V = 18 V

DS(on)

Typ. R

DS(on)

S1: Kelvin Source

S2: Power Source

• Ultra Low Gate Charge (typ. Q

= 87 nC)

G(tot)

• Low Effective Output Capacitance (typ. C = 113 pF)

oss

S2 S1

N−CHANNEL MOSFET

• 100% UIL Tested

• AEC−Q101 Qualified and PPAP Capable

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• Automotive On Board Charger

• Automotive DC−DC converter for EV/HEV

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

TO247−4L

CASE 340CJ

DSS

900

Gate−to−Source Voltage

+22/−8

−5/+15

Recommended Opera-

tion Values of Gate−to−

Source Voltage

GSop

MARKING DIAGRAM

< 175°C

Continuous Drain

Current R

Steady

State

= 25°C

Power Dissipation R

221

&Z&3&K

H4L060

N090SC1

Continuous Drain

Current R

Steady

State

= 100°C

Power Dissipation R

110

211

Pulsed Drain Current

(Note 2)

T = 25°C

Single Pulse Surge Drain

Current Capability

(Note 3)

320

DSC

T = 25°C, t = 10 ms,

= 4.7 W

= Assembly Plant Code

= Data Code (Year & Week)

= Lot

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

NVH4L060N090SC1 = Specific Device Code

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

162

Energy (I

= 18 A, L = 1 mH) (Note 4)

L(pk)

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Device

Package

Shipping

30 Units /

Tube

TO247−4L

NVH4L060N090SC1

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Junction−to−Case (Note 1)

Junction−to−Ambient (Note 1)

Symbol

Value

0.68

Unit

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. Peak current might be limited by transconductance.

4. E of 162 mJ is based on starting T = 25°C; L = 1 mH, I = 18 A, V = 100 V, V = 15 V.

Publication Order Number:

May, 2022 − Rev. 2

NVH4L060N090SC1/D

NVH4L060N090SC1

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 1 mA

900

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

= 1 mA, referenced to 25_C

574

mV/_C

(BR)DSS

Zero Gate Voltage Drain Current

100

250

= 0 V, V = 900 V, T = 25_C

DSS

= 0 V, V = 900 V, T = 175_C

Gate−to−Source Leakage Current

ON CHARACTERISTICS

= +22/−8 V, V = 0 V

GSS

Gate Threshold Voltage

= V , I = 5 mA

1.8

2.7

4.3

+15

GS(th)

Recommended Gate Voltage

Drain−to−Source On Resistance

GOP

−5

= 15 V, I = 20 A, T = 25_C

DS(on)

= 18 V, I = 20 A, T = 25_C

= 15 V, I = 20 A, T = 175_C

Forward Transconductance

= 20 V, I = 20 A

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

= 0 V, f = 1 MHz, V = 450 V

1770

113

ISS

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

OSS

RSS

= −5/15 V, V = 720 V, I = 10 A

G(tot)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Gate Resistance

G(th)

f = 1 MHz

3.0

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Rise Time

= −5/15 V, V = 720 V,

d(on)

= 20 A, R = 2.5 W,

Inductive Load

Turn−Off Delay Time

Fall Time

d(off)

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

183

OFF

TOT

235

DRAIN−SOURCE DIODE CHARACTERISTICS

Continuous Drain−to−Source Diode

= −5 V, T = 25_C

Forward Current

Pulsed Drain−to−Source Diode

Forward Current (Note 2)

= −5 V, T = 25_C

184

SDM

Forward Diode Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Energy

Peak Reverse Recovery Current

Charge Time

= −5 V, I = 10 A, T = 25_C

3.9

= −5/15 V, I = 30 A,

dI /dt = 1000 A/ms, V = 720 V

1.0

9.0

REC

RRM

Discharge Time

8.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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NVH4L060N090SC1

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

Figure 3. On−Resistance Variation with

Figure 4. On−Resistance vs. Gate−to−Source

Temperature

Voltage

Figure 5. Transfer Characteristics

Figure 6. Diode Forward Voltage vs. Current

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NVH4L060N090SC1

TYPICAL CHARACTERISTICS (continued)

Figure 7. Gate−to−Source Voltage vs. Total

Figure 8. Capacitance vs. Drain−to−Source

Charge

Voltage

Figure 9. Unclamped Inductive Switching

Capability

Figure 10. Maximum Continuous Drain

Current vs. Case Temperature

Figure 11. Safe Operating Area

Figure 12. Single Pulse Maximum Power

Dissipation

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NVH4L060N090SC1

TYPICAL CHARACTERISTICS (continued)

Figure 13. Junction−to−Ambient Thermal Response

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−4LD

CASE 340CJ

ISSUE A

DATE 16 SEP 2019

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13852G

TO−247−4LD

PAGE 1 OF 1

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NVH4L060N090SC1 [ONSEMI]

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