NVH4L027N65S3F [ONSEMI]
SUPERFET III MOSFET, 650V, 27mohm;
| 型号： | NVH4L027N65S3F |
| 厂家： | 
ONSEMI |
| 描述： | SUPERFET III MOSFET, 650V, 27mohm |
| 文件： | 总10页 (文件大小：910K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
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MOSFET – Single N-Channel,
SUPERFET) III, FRFET)
650 V, 75 A, 27.4 mW
NVH4L027N65S3F
Features
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• Ultra Low Gate Charge & Low Effective Output Capacitance
• Lower FOM (R
x Q
& R
x E
)
DS(on) max.
g typ.
DS(on) max.
OSS
• AEC−Q101 Qualified and PPAP Capable
V
R
MAX
I MAX
D
DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
650 V
27.4 mW @ 10 V
75 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Drain−to−Source Voltage
Symbol
Value
650
30
Unit
V
D
V
DSS
V
GSS
V
GSS
Gate−to−Source Voltage
Gate−to−Source Voltage
− DC
V
− AC (f > 1 Hz)
30
V
G
Drain Current
− Continuous (T = 25°C)
I
D
I
D
75
A
C
S1: Driver Source
S2: Power Source
Drain Current
− Continuous (T = 100°C)
60
A
C
S1
S2
Drain Current
− Pulsed (Note 3)
I
187.5
595
4.76
A
DM
POWER MOSFET
Power Dissipation
Power Dissipation
(T = 25°C)
C
P
W
D
D
− Derate Above 25°C
P
W/°C
°C
MARKING
DIAGRAM
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
J
STG
Single Pulsed Avalanche Energy (Note 4)
Repetitive Avalanche Energy (Note 3)
MOSFET dv/dt
E
E
1610
5.95
100
50
mJ
mJ
AS
$Y&Z&3&K
NVH4L027
N65S3F
AR
dv/dt
dv/dt
V/ns
V/ns
°C
D
Peak Diode Recovery dv/dt (Note 5)
S2
S1
Max. Lead Temperature for Soldering Purposes
(1/8″ from case for 5 s)
T
300
G
L
TO−247−4LD
CASE 340CJ
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case,
R
0.21
°C/W
q
JC
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
Max. (Notes 1, 2)
&Z
&3
&K
Thermal Resistance, Junction−to−Ambient,
Max. (Notes 1, 2)
R
40
q
JA
NVH4L027N65S3F = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown.
They are not constants and are only valid for the particular conditions noted.
2. Assembled to an infinite heatsink with perfect heat transfer from the case
(assumes 0 K/W thermal interface).
ORDERING INFORMATION
Device
Package
Shipping
3. Repetitive rating: pulse−width limited by maximum junction temperature.
4. I = 15 A, R = 25 W, starting T = 25°C.
NVH4L027N65S3F TO−247−4LD 30 Units / Tube
(Pb−Free)
AS
G
J
5. I ≤ 37.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
September, 2020 − Rev. 0
NVH4L027N65S3F/D
NVH4L027N65S3F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
BV
BV
V
= 0 V, I = 1 mA, T = 25°C
650
700
V
V
DSS
GS
D
J
V
GS
= 0 V, I = 10 mA, T = 150°C
D J
DSS
Breakdown Voltage Temperature
Coefficient
DBV
/
I
= 20 mA, Referenced to 25_C
610
590
mV/_C
DSS
J
D
DT
Zero Gate Voltage Drain Current
I
mA
V
GS
= 0 V, V = 650 V
10
DSS
DS
V
= 520 V, T = 125_C
DS
C
Gate−to−Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
I
V
=
30 V, V = 0 V
100
nA
GSS
GS
DS
V
GS(th)
V
GS
= V , I = 3 mA
3.0
5.0
V
mV/_C
mW
S
DS
D
Threshold Temperature Coefficient
Static Drain−to−Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
DV
/DT
V
GS
= V , I = 3 mA
−7.3
21.5
57
GS(th)
J
DS
D
R
V
GS
= 10 V, I = 35 A
27.4
DS(on)
D
g
FS
V = 20 V, I = 37.5 A
DS D
pF
C
7780
200
26
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 400 V, f = 1 MHz
DS
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Threshold Gate Charge
C
rss
oss(eff.)
C
V
V
= 0 V to 400 V, V = 0 V
1880
347
227
35
pF
pF
nC
DS
GS
C
Q
= 0 V to 400 V, V = 0 V
GS
oss(er.)
G(TOT)
DS
Q
G(TH)
V
= 10 V, V = 400 V, I = 37.5 A
DS D
GS
(Note 6)
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Equivalent Series Resistance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Q
67
GS
GD
Q
87
ESR
f = 1 MHz
2.2
W
t
t
42
34
ns
ns
ns
ns
d(on)
V
= 10 V, V = 400 V,
DD
Turn-On Rise Time
t
r
GS
D
I
= 37.5 A, R = 2 W
g
Turn-Off Delay Time
153
18
d(off)
(Note 6)
Turn-Off Fall Time
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
Maximum Continuous Source−to−
I
75
187.5
1.3
A
A
S
V
V
= 0 V
= 0 V
GS
Drain Diode Forward Current
Maximum Pulsed Source−to−Drain
Diode Forward Current
I
SM
GS
Source−to−Drain Diode Forward
Voltage
V
SD
V
V
GS
= 0 V, I = 37.5 A
SD
ns
Reverse Recovery Time
Charge Time
t
171
141
29
rr
t
a
b
V
GS
= 0 V, dI /dt = 100 A/ms,
F
I
= 37.5 A
SD
Discharge Time
t
Reverse Recovery Charge
Q
973
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Essentially independent of operating temperature typical characteristics.
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2
NVH4L027N65S3F
TYPICAL CHARACTERISTICS
200
100
200
V
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
VGS=10.0V
GS
8.0V
7.0V
6.5V
6.0V
5.5V
100
5.5 V
10
10
1
250 ms Pulse Test
TC= 150 o
250 ms Pulse Test
= 255C
C
T
C
1
0.1
1
10
, Drain−Source Voltage (V)
DS
20
0.2
1
10
20
V
V
DS
, Drain−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. On−Region Characteristics
TC = 25o C
0.04
300
V
DS = 20V
250 ms Pulse Test
100
10
1
0.03
150oC
VGS= 10V
25oC
0.02
0.01
VGS= 20V
−55oC
0
50
100
150
200
2
3
4
5
6
7
8
I , Drain Current (A)
D
VGS, Gate−Source Voltage (V)
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
1000
VGS= 0 V
250 ms Pulse Test
1000K
100
10
100K
10K
1K
o
150C
C
iss
o
25 C
1
C
oss
−55oC
100
10
0.1
C
rss
0.01
f = 1 MHz
= 0 V
V
GS
1
0.001
1000
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Figure 6. Capacitance Characteristics
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3
NVH4L027N65S3F
TYPICAL CHARACTERISTICS
1.2
10
8
VGS= 0 V
ID = 20 mA
V
DD
= 130 V
I
D
= 37.5 A
1.1
V
DD
= 400 V
6
1.0
0.9
0.8
4
2
0
0
50
100
150
200
250
−50
0
50
100
150
Q , TOTAL GATE CHARGE (nC)
g
T , Junction Temperature (5C)
J
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
500
100
3.0
VGS= 10 V
ID= 35 A
30ms
2.5
2.0
1.5
100ms
1ms
10ms
10
DC
Operation in This Area
is Limited by RDS(on)
1.0
0.5
1
o
TC= 25 C
T = 150oC
J
Single Pulse
0.0
0.1
−50
0
50
100
150
1
10
100
1000
T , Junction Temperature (5C)
J
V
, Drain−Source Voltage (V)
DS
Figure 9. On−Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
80
60
60
40
45
30
20
0
15
0
0
130
260
390
520
650
25
50
75
100
125
150
T , Case Temperature (5C)
Figure 11. Maximum Drain Current vs. Case
Temperature
V
, Drain to Source Voltage (V)
C
Figure 12. EDOSSS vs. Drain−to−Source Voltage
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4
NVH4L027N65S3F
TYPICAL CHARACTERISTICS
1.2
120
100
80
60
40
20
0
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
VGS
I
= V
DS
= 3 mA
D
ID= 35 A
1.0
0.8
0.6
0.4
TJ = 150oC
TJ = 25oC
6
7
8
9
10
−50
0
50
100
oC)
150
T
VGS, Gate−Source Voltage (V)
J , Junction Temperature (
Figure 14. Normalized Gate Threshold Voltage
vs. Temperature
Figure 13. RDSON vs. Gate Voltage
300
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
− V
)
AV
AS
DSS
DD
If R =/ 0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
− V ) +1]
DSS DD
AV
AS
o
Starting T = 25 C
J
10
Starting T = 125oC
J
1
0.001
0.01
0.1
1
10
100
tAV, Time In Avalanche (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 15. Unclamped Inductive Switching
Capability
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
−5
−4
−3
−2
−1
10
10
10
10
10
100
101
102
t, Rectangular Pulse Duration (sec)
Figure 16. Transient Thermal Response Curve
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5
NVH4L027N65S3F
Figure 17. Gate Charge Test Circuit & Waveform
Figure 18. Resistive Switching Test Circuit & Waveforms
Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NVH4L027N65S3F
Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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7
NVH4L027N65S3F
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
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8
NVH4L027N65S3F
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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