NVH950S75L4SPC [ONSEMI]
VE-Trac Direct: High Performance Single Side Direct Cooling Three-Phase 6-Pack Power Module for Automotive, 750V, 950A, Long Tabs;
| 型号： | NVH950S75L4SPC |
| 厂家： | 
ONSEMI |
| 描述： | VE-Trac Direct: High Performance Single Side Direct Cooling Three-Phase 6-Pack Power Module for Automotive, 750V, 950A, Long Tabs |
| 文件： | 总12页 (文件大小：451K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Automotive 750 V, 950 A
Single Side Direct Cooling
6-Pack Power Module
VE-Tractt Direct Module
NVH950S75L4SPC
Product Description
The NVH950S75L4SPC is a power module from the VE−Tract
Direct family of highly integrated power modules with industry
standard footprints for Hybrid (HEV) and Electric Vehicle (EV)
traction inverter application.
The module integrates six Field Stop 4 (FS4) 750 V Narrow Mesa
IGBTs in a 6−pack configuration, which excels in providing high
current density, while offering robust short circuit protection and
increased blocking voltage. Additionally, FS4 750 V Narrow Mesa
IGBTs show low power losses during lighter loads, which helps to
improve overall system efficiency in automotive applications.
For assembly ease and reliability, a new generation of press−fit pins
are integrated into the power module signal terminals. In addition, the
power module has an optimized pin−fin heatsink in the baseplate and
longer power terminals to easily integrate an external current sensor.
SSDC33, 154.50x92.0 (SPC)
CASE 183AC
MARKING DIAGRAM
XXXXXXXXXXXXXXXXXXXXX
ATYYWW
XXXXX = Specific Device Code
= Assembly & Test Site Code
YYWW = Year and Work Week Code
AT
Features
• Direct Cooling w/ Integrated Pin−fin Heatsink
• Ultra−low Stray Inductance
P1
P2
P3
T11 T12
T21 T22
T31 T32
C1
G1
C3
G3
C5
G5
• T
= 175°C Continuous Operation
vjmax
• Low V
and Switching Losses
CESAT
E1
C2
E3
C4
E5
C6
1
2
3
• Automotive Grade FS4 750 V Narrow Mesa IGBT
• Fast Recovery Diode Chip Technologies
• 4.2 kV Isolated DBC Substrate
G2
E2
G4
E4
G6
E6
• Easy to Integrate 6−pack Topology
• This Device is Pb−Free and is RoHS Compliant
N1
N2
N3
Typical Applications
ORDERING INFORMATION
• Hybrid and Electric Vehicle Traction Inverter
• High Power Converters
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
December, 2022 − Rev. 5
NVH950S75L4SPC/D
NVH950S75L4SPC
Pin Description
P1
P2
P3
T11
T12
T21
T22
T31
T32
C1
C3
G3
C5
G5
G1
E1
C2
E3
C4
E5
C6
1
2
3
G2
E2
G4
E4
G6
E6
N1
N2
N3
Figure 1. Pin Description
PIN FUNCTION DESCRIPTION
Pin #
P1, P2, P3
N1, N2, N3
1
Pin Function Description
Positive Power Terminals
Negative Power Terminals
Phase 1 Output
2
Phase 2 Output
3
Phase 3 Output
G1−G6
E1−E6
C1−C6
T11, T12
T21, T22
T31, T32
IGBT Gate
IGBT Gate Return
Desat Detect/Collector Sense
Phase 1 Temperature Sensor Output
Phase 2 Temperature Sensor Output
Phase 3 Temperature Sensor Output
Materials
DBC Substrate: SiN isolated substrate, basic isolation,
and copper on both sides
Terminals: Copper + Tin electro−plating
Signal Leads: Copper + Tin plating
Pin−fin Base plate: Copper + Ni plating
Flammability Information
The module frame meets UL94V−0 flammability rating.
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2
NVH950S75L4SPC
MODULE CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameter
Rating
−40 to 175
−40 to 125
4200
Unit
°C
°C
V
T
vj
Operating Junction Temperature
Storage Temperature
T
STG
Isolation Voltage (DC, 0 Hz, 1 s)
V
ISO
L
Stray Inductance
8
nH
mW
g
sCE
RCC’+EE’
Module Lead Resistance, Terminals − Chip
Module Weight
0.75
G
700
CTI
Comparative Tracking Index
>200
−
d
creep
Creepage:
Terminal to Heatsink
Terminal to Terminal
9.0
9.0
mm
d
clear
Clearance:
Terminal to Heatsink
Terminal to Terminal
4.5
4.5
mm
Symbol
Dp
Parameters
Conditions
Min
Typ
Max
Unit
mbar
bar
Pressure Drop in Cooling Circuit
10 L/min, 65°C, 50/50 EGW
−
95
−
P (Note 1)
Maximum Pressure in Cooling
Loop (relative)
T
T
< 40°C
> 40°C
−
−
−
−
2.5
2.0
Baseplate
Baseplate
1. EPDM rubber 50 durometer ‘O’ ring used.
ABSOLUTE MAXIMUM RATINGS (Tvj = 25°C, Unless Otherwise Specified)
Symbol Parameter
IGBT
Rating
Unit
V
CES
V
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
750
20
V
V
I
Implemented Collector Current
950
A
CN
I
Continuous DC Collector Current, T = 175°C, T = 65°C, Ref. Heatsink
750 (Note 2)
1900
A
C nom
vj
F
I
Pulsed Collector Current @ V = 15 V, t =1 mS
A
CRM
GE
p
P
tot
Total Power Dissipation T = 175°C, T = 65°C, Ref. Heatsink
1325
W
vj
F
Diode
V
Repetitive Peak Reverse Voltage
Implemented Forward Current
750
950
V
A
A
A
RRM
I
FN
I
F
Continuous Forward Current, T = 175°C, T = 65°C, Ref. Heatsink
500 (Note 2)
1900
vj
F
I
Repetitive Peak Forward Current, t = 1 mS
p
FRM
2
2
I t value
Surge Current Capability, t = 10 mS,
T
vj
T
vj
= 150°C
= 175°C
19000
16000
A s
p
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Verified by characterization/design, not by test.
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3
NVH950S75L4SPC
CHARACTERISTICS OF IGBT (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
Collector to Emitter Saturation
Voltage (Terminal)
V
V
= 15 V, I = 600 A
T
= 25°C
1.30
1.55
V
V
CESAT
GE
C
vj
−
Collector to Emitter Saturation
Voltage (Chip)
= 15 V, I = 600 A
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.25
1.37
1.40
1.50
−
−
GE
C
V
GE
= 15 V, I = 950 A
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.47
1.71
1.77
−
−
−
C
I
I
Collector to Emitter Leakage
Current
V
V
= 0, V = 750 V
T
vj
T
vj
= 25°C
= 150°C
−
−
−
500
mA
CES
GE
CE
2.0
−
mA
Gate – Emitter Leakage
Current
= 0, V
=
20 V
−
−
300
nA
CE
GE
GES
Threshold Voltage
Total Gate Charge
Internal Gate Resistance
Input Capacitance
Output Capacitance
V
V
= V , I = 90 mA
4.8
−
5.7
2.3
1.7
60
6.6
−
V
V
CE
GE
C
th
−8 to 15 V, V = 400 V
mC
W
Q
GE=
CE
G
−
−
R
Gint
V
CE
V
CE
V
CE
= 30 V, V = 0 V, f = 100 kHz
−
−
nF
nF
nF
C
GE
ies
= 30 V, V = 0 V, f = 100 kHz
−
1.90
0.2
−
C
GE
oes
Reverse Transfer
Capacitance
= 30 V, V = 0 V, f = 100 kHz
−
−
C
GE
res
Turn On Delay, Inductive
Load
I
= 600 A, V = 400 V,
GE
T
T
T
= 25°C
−
−
−
315
320
322
−
−
−
nS
nS
nS
nS
mJ
T
C
V
CE
vj
vj
vj
d.on
= +15/−8 V,
= 150°C
= 175°C
Rg.on = 4 W
Rise Time, Inductive Load
I
= 600 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
108
127
132
−
−
−
T
r
C
CE
V
= +15/−8 V,
GE
Rg.on = 4 W
Turn Off Delay, Inductive
Load
I
= 600 A, V = 400 V,
T
vj
T
vj
= 25°C
= 150°C
−
−
−
1063
1196
1203
−
−
−
T
C
CE
d.off
V
= +15/−8 V,
GE
Rg.off = 12 W
Tvj = 175°C
Fall Time, Inductive Load
I
= 600 A, V = 400 V,
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
85
144
151
−
−
−
T
f
C
CE
V
= +15/−8 V,
GE
Rg.off = 12 W
E
Turn−On Switching Loss
(Including Diode Reverse
Recovery Loss)
I
= 600 A, V = 400 V,
di/dt = 4.6 A/nS,
T = 25°C
vj
−
−
−
26
36
38
−
−
−
ON
C
CE
V
= +15/−8 V,
GE
Ls = 22 nH, Rg.on = 4 W
di/dt = 3.9 A/nS,
= 150°C
T
vj
di/dt = 3.6 A/nS,
= 175°C
Tvj
E
OFF
Turn−Off Switching Loss
I
= 600 A, V = 400 V,
GE
dv/dt = 2.7 V/nS,
T = 25°C
vj
−
−
−
33
46
50
−
−
−
mJ
C
V
CE
= +15/−8 V,
Ls = 22 nH, Rg.off = 12 W
dv/dt = 1.9 V/nS,
= 150°C
T
vj
dv/dt = 1.9 V/nS,
T
vj
= 175°C
Minimum Short Circuit Energy
Withstand
V
GE
= 15 V, V = 400 V
T
vj
T
vj
= 25°C
= 175°C
9
4.5
−
−
J
E
SC
CC
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4
NVH950S75L4SPC
CHARACTERISTICS OF INVERSE DIODE (T = 25°C, Unless Otherwise Specified)
vj
Symbol
V
Parameters
Conditions
Min
Typ
Max
Unit
Diode Forward Voltage
(Terminal)
I = 600 A
F
T
vj
= 25°C
−
1.70
1.95
V
F
Diode Forward Voltage (Chip)
Reverse Recovery Energy
Recovered Charge
I = 600 A
T
T
v
= 25°C
−
−
−
1.60
1.55
1.50
1.85
−
F
vj
vj
= 150°C
T j = 175°C
−
I = 950 A
F
T
vj
T
vj
T
vj
= 25°C
= 150°C
= 175°C
−
−
−
1.73
1.75
1.74
−
−
−
I = 600 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
3
9
−
−
−
mJ
mC
A
E
F
GE
Rg.on = 4 W
R
rr
V
= −8 V,
di/dt = 3.0 A/nS,
= 150°C
T
vj
di/dt = 2.9 A/nS,
= 175°C
11
T
vj
I = 600 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
9
−
−
−
Q
F
GE
Rg.on = 4 W
R
RR
V
= −8 V,
di/dt = 3.0 A/nS,
= 150°C
32
39
T
vj
di/dt = 2.9 A/nS,
= 175°C
T
vj
Peak Reverse Recovery
Current
I = 600 A, V = 400 V,
di/dt = 3.5 A/nS,
T = 25°C
vj
−
−
−
133
246
282
−
−
−
Irr
F
GE
Rg.on = 4 W
R
V
= −8 V,
di/dt = 3.0 A/nS,
= 150°C
T
vj
di/dt = 2.9 A/nS,
= 175°C
T
vj
NTC SENSOR CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
vj
Symbol
Parameters
Conditions
Min
Typ
Max
Unit
R
Rated Resistance
T
C
= 25°C
−
5
−
kW
25
(Note 3)
DR/R
Deviation of R100
Power Dissipation
B−Value
T
T
= 100°C, R
= 493 W
100
5
−
−
−
−
−
5
20
−
%
mW
K
C
P
25
= 25°C
−
C
B
R = R exp [B
(1/T−1/298)]
(1/T−1/298)]
3375
3360
3364
25/50
25/80
25
25/50
25/80
25/100
B
B−Value
R = R exp [B
−
K
25
B
25/100
B−Value
R = R exp [B
(1/T−1/298)]
−
K
25
THERMAL CHARACTERISTICS
Symbol
Parameter
Min
−
Typ
Max
0.10
0.16
Unit
°C/W
°C/W
IGBT.R
Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW
Rth, Junction to Fluid, 10 L/min, 65°C, 50/50 EGW
0.083
0.134
th,J−F
Diode.R
−
th,J−F
ORDERING INFORMATION
Part Number
Package
Shipping
NVH950S75L4SPC
SSDC33, 154.50x92.0 (SPC)
4 Units / Tray
(Pb−Free)
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5
NVH950S75L4SPC
TYPICAL CHARACTERISTICS
1800
1600
1400
1200
1000
800
1600
1400
V
GE
= 13 V
V
= 17 V
T
vj
= 25°C
V
GE
= 15 V
GE
V
GE
= 15 V
V
GE
= 11 V
1200
1000
800
T
vj
= 150°C
T
vj
= 175°C
V
GE
= 9 V
600
600
400
400
200
0
T
= 150°C
200
0
vj
0.2
0.6
1.0
V
1.4
(V)
1.8
2.2
2.6
0
1
2
3
4
V
(V)
CE
CE
Figure 2. IGBT Output Characteristic
Figure 3. IGBT Output Characteristic
1600
1400
1200
1000
800
70
60
50
40
30
20
T
vj
= 175°C
V
CE
= 20 V
V
R
= +15/−8 V,
= 12 W,
= 400 V
GE
g.off
V
CE
T
vj
= 150°C
T
vj
= 25°C
600
T
vj
= 150°C
400
10
0
200
0
T
vj
= 175°C
T
= 25°C
vj
4
5
6
7
8
9
10
11
12
100 200
300
400
I
500
(A)
600
700
800
V
GE
(V)
C
Figure 4. IGBT Transfer Characteristic
Figure 5. IGBT Turn−off Losses vs. IC
70
60
50
40
30
60
55
50
45
40
35
30
25
T
= 175°C
V
I
= +15/−8 V,
= 600 A,
= 400 V
vj
V
= +15/−8 V,
GE
GE
R
V
= 4 W,
C
g.on
V
CE
= 400 V
T
= 175°C
CE
vj
T
vj
= 150°C
T
vj
= 25°C
T
= 25°C
vj
20
10
0
20
15
10
T
= 150°C
vj
100 200
300
400
I
500
(A)
600
700
800
2
3
4
5
6
7
8
9
10
R
(W)
C
G
Figure 6. IGBT Turn−on Losses vs. IC
Figure 7. EON vs. RG
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NVH950S75L4SPC
TYPICAL CHARACTERISTICS
60
55
50
15
Q
G
10
T
T
= 175°C
= 150°C
vj
45
40
vj
5
0
T
= 25°C
vj
35
30
V
= 400 V,
= 600 A,
= 25°C
CE
V
= +15/−8 V,
= 600 A,
= 400 V
−5
GE
I
C
I
C
25
20
T
vj
V
CE
−10
12
14
16
(W)
18
20
0
0.4
0.8
1.2
(mC)
1.6
2.0
2.4
R
Q
G
G
Figure 8. EOFF vs. RG
Figure 9. Gate Charge Characteristic
1800
1600
1400
1200
1000
800
775
750
725
700
Chip
Module
600
400
V
R
= +15/−8 V,
GE
675
650
= 12 W,
g,off
I
I
= 1 mA, T ≤ 25°C,
vj
CES
CES
200
0
T
vj
= 175°C
= 30 mA, T > 25°C
vj
−40
20
80
(°C)
140
200
0
200
400
(V)
600
800
T
vj
V
CE
Figure 10. Maximum Allowed VCE
Figure 11. Reverse Bias Safe Operating Area
1600
1400
1200
1000
800
100
10
C
ies
V
= 0 V,
= 25°C
GE
T
vj
f = 100 KHz
C
T = 150°C
vj
600
oes
1
400
T
= 175°C
200
0
vj
C
res
T
vj
= 25°C
0.1
0
100
200
300
400
500
0.2
0.6
1.0
1.4
1.8
2.2
V
CE
(V)
V (F)
F
Figure 12. Capacitance Characteristic
Figure 13. Diode Forward Characteristic
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NVH950S75L4SPC
TYPICAL CHARACTERISTICS
12
10
8
14
T
T
= 175°C
= 150°C
R
V
= 4 W
= 400 V
vj
g.on
12
10
R
T
vj
= 175°C
vj
8
6
4
I = 600 A,
6
F
T
= 150°C
= 25°C
vj
V
R
= 400 V
4
T
T
vj
= 25°C
vj
2
0
2
0
2
3
4
5
6
7
8
9
10
100 200
300
400
500
600
700 800
R
(W)
I (A)
F
G
Figure 14. Diode Switching Losses vs. RG
Figure 15. Diode Switching Losses vs. IF
1
1
10 L/Min, T = 65°C, 50/50 EGW,
f
10 L/Min, T = 65°C, 50/50 EGW,
f
Ref. Cooler Assy.
Ref. Cooler Assy.
Z
th,j−f
: IGBT
Z
th,j−f
: Diode
0.1
0.1
0.01
i:
R
1
2
3
4
i:
R
1
2
3
4
[K/W]: 0.0012 0.0074 0.0329 0.0418
[K/W]: 0.0035 0.0183 0.0672 0.0448
th
[s]:
th
[s]:
t
th
0.0001 0.0007 0.0362 0.4745
t
th
0.0001 0.0006 0.0272 0.4569
0.001
0.01
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
TIME (s)
TIME (s)
Figure 16. IGBT Transient Thermal Impedance
(Typ.)
Figure 17. Diode Transient Thermal Impedance
(Typ.)
0.096
0.094
0.148
0.146
0.144
0.142
0.140
R
= f(Q ), T = 65°C, 50/50 EGW,
V f
R
= f(Q ), T = 65°C, 50/50 EGW,
V f
th
th
Ref. Cooler Assy.
Ref. Cooler Assy.
0.092
0.090
0.088
0.086
0.084
0.082
0.138
0.136
0.134
0.132
0.080
0.078
0.130
0.128
4
6
8
10
(L/min)
12
14
4
6
8
10
12
14
Q
Q
(L/min)
V
V
Figure 18. IGBT, Thermal Resistance (Typ.)
Figure 19. Diode, Thermal Resistance (Typ.)
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NVH950S75L4SPC
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
100K
T = 25°C
f
Dp = f(Q ), 50/50 EGW,
Ref. Cooler Assy.
V
T = 65°C
f
10K
1K
60
40
20
100
5
7
9
11
(L/min)
13
15
0
25
50
75
100
125
Q
T (°C)
C
V
Figure 20. Pressure Drop in Cooling Circuit
Figure 21. NTC Thermistor − Temperature
Characteristic (Typical)
VE−Trac is a of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries.
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SSDC33, 154.50x92.0 (SPC)
CASE 183AC
ISSUE A
DATE 11 DEC 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SSDC33, 154.50x92.0 (SPC)
CASE 183AC
ISSUE A
DATE 11 DEC 2019
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ON Semiconductor and
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