NVHL020N090SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel- EliteSiC, 20 mohm, 900 V, M2, TO247−3L;
| 型号： | NVHL020N090SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel- EliteSiC, 20 mohm, 900 V, M2, TO247−3L |
| 文件： | 总8页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 20 mohm, 900 V,
M2, TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
900 V
28 mW @ 15 V
118 A
D
NVHL020N090SC1
Features
• Typ. R
• Typ. R
= 20 mW @ V = 15 V
DS(on)
DS(on)
GS
G
= 16 mW @ V = 18 V
GS
• Ultra Low Gate Charge (typ. Q
= 196 nC)
G(tot)
S
• Low Effective Output Capacitance (typ. C = 296 pF)
• 100% UIL Tested
oss
N−CHANNEL MOSFET
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
G
D
S
TO−247 LONG LEADS
CASE 340CX
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
MARKING DIAGRAM
V
DSS
900
V
V
V
Gate−to−Source Voltage
V
GS
+22/−8
+15/−5
Recommended Operation
Values of Gate−Source Voltage
T
< 175°C
= 25°C
V
GSop
C
Continuous Drain
Current R
Steady
State
T
I
118
503
83
A
W
A
$Y&Z&3&K
NVHL020
N090SC1
C
DC
q
JC
Power Dissipation
R
P
DC
DC
q
JC
Continuous Drain
Current R
Steady
State
T
C
= 100°C
I
q
JC
Power Dissipation
R
P
251
W
$Y
= onsemi Logo
DC
q
JC
&Z
&3
&K
= Assembly Plant Code
= Date Code (Year & Week)
= Lot
Pulsed Drain Current (Note 2)
T = 25°C
I
472
854
A
A
A
DM
Single Pulse Surge
Drain Current
Capability(Note 3)
T = 25°C, t = 10 ms,
I
DSC
A
p
NVHL020N090SC1 = Specific Device Code
R
= 4.7 W
G
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
Source Current (Body Diode)
I
153
264
A
Device
Package
Shipping
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
NVHL020N090SC1
TO−247
Long Lead
30 Units /
Tube
Energy (I = 23 A , L = 1 mH) (Note 4)
L
pk
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. Peak current might be limited by transconductance.
4. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A,
AS
DD
J
AS
V
= 100 V, V = 15 V.
GS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022 − Rev. 3
NVHL020N090SC1/D
NVHL020N090SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.30
40
Units
°C/W
°C/W
Thermal Resistance Junction−to−Case (Note 1)
Thermal Resistance Junction−to−Ambient (Note 1)
R
θ
JC
JA
R
θ
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
900
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 1 mA, refer to 25°C
D
500
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
100
250
1
mA
mA
mA
DSS
GS
DS
J
= 900 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= +22/−8 V, V = 0 V
DS
GSS
GS
GS
Gate Threshold Voltage
V
R
V
= V , I = 20 mA
1.8
2.7
4.3
+15
28
V
V
GS(TH)
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
−5
GOP
V
GS
V
GS
V
GS
V
DS
= 15 V, I = 60 A, T = 25°C
20
16
27
49
mW
DS(on)
D
J
= 18 V, I = 60 A, T = 25°C
D
J
= 15 V, I = 60 A, T = 175°C
D
J
Forward Transconductance
g
= 20 V, I = 60 A
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
V
= 0 V, f = 1 MHz,
= 450 V
4415
296
24
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= −5/15 V, V = 720 V,
196
42
nC
G(TOT)
GS
DS
I
= 60 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
Q
78
GS
GD
Q
55
f = 1 MHz
1.6
W
Gate−Resistance
R
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
D
= −5/15 V, V = 720 V,
40
63
ns
d(ON)
GS
DS
I
= 60 A, R = 2.5 W,
G
Rise Time
t
r
Inductive Load
Turn−Off Delay Time
t
55
d(OFF)
Fall Time
t
f
13
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
2025
201
2226
mJ
ON
E
OFF
E
TOT
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
GS
V
GS
V
GS
= −5 V, T = 25°C
153
472
A
A
V
SD
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 2)
I
= −5 V, T = 25°C
J
SDM
Forward Diode Voltage
V
= −5 V, I = 30 A, T = 25°C
3.8
SD
SD
J
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2
NVHL020N090SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
= −5/15 V, I = 60 A,
28
199
4
ns
nC
mJ
A
RR
GS
S
SD
dI /dt = 1000 A/ms, V = 720 V
DS
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
14
16
12
RRM
Ta
ns
ns
Discharge Time
Tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVHL020N090SC1
TYPICAL CHARACTERISTICS
200
150
100
4
13 V
V
GS
= 15 V
9 V
V
GS
= 10 V
12 V
3
12 V
13 V
15 V
2
10 V
9 V
1
50
0
6 V
7 V
0
0
2
4
6
8
10
0
30
60
90
120
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.9
1.7
1.5
1.3
1.1
160
120
80
I
D
= 60 A
I
V
= 60 A
D
= 15 V
GS
40
0
T = 150°C
J
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
5
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
120
100
80
300
T = 175°C
J
T = −55°C
J
V
GS
= −5 V
T = 25°C
J
T = −55°C
J
T = 175°C
J
60
30
40
T = 25°C
J
20
0
V
DS
= 20 V
3
3
6
9
12
15
1
3
5
7
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVHL020N090SC1
TYPICAL CHARACTERISTICS (continued)
15
10
5
50K
V
DD
= 180 V
I
D
= 60 A
V
DD
= 540 V
10K
1K
C
iss
V
DD
= 720 V
C
oss
C
rss
100
0
10
1
f = 1 MHz
= 0 V
V
GS
−5
0.1
1
10
100
800
175
0.1
0
50
100
Q , GATE CHARGE (nC)
150
200
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
140
120
100
80
V
GS
= 15 V
T = 25°C
J
10
60
T = 150°C
J
40
20
0
Typical performance based
on characterization data
R
= 0.30°C/W
q
JC
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100K
10K
1000
100
10
Single Pulse
R
= 0.30°C/W
q
JC
T
C
= 25°C
10 ms
This area is lim-
ited by R
100 ms
DS(on)
1K
Single Pulse
T = Max Rated
1
1 ms
J
R
= 0.30°C/W
q
JC
10 ms
T
C
= 25°C
100 ms
1000 5000
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
100
0.1
1
10
100
0.00001 0.0001
0.001
0.01
V
DS
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVHL020N090SC1
TYPICAL CHARACTERISTICS (continued)
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Notes:
Z (t) = r(t) x R
q
JC
0.01
P
DM
0.01
q
JC
Single Pulse
R
= 0.30°C/W
q
JC
t
Peak T = P
x Z
(t) + T
JC C
1
q
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
t, RECTANGULAR PULSE DURATION (sec)
0.01
0.1
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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