NVHL020N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L;型号: | NVHL020N120SC1 |
厂家: | ONSEMI |
描述: | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L |
文件: | 总7页 (文件大小:301K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 20 mohm,
1200ꢀV, M1, TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
1200 V
28 mꢀ @ 20 V
103 A
N−CHANNEL MOSFET
NVHL020N120SC1
Features
D
• Typ. R
= 20 mꢀ
• Ultra Low Gate Charge (typ. Q
DS(on)
= 203 nC)
G(tot)
• Low Effective Output Capacitance (typ. C = 260 pF)
oss
G
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
S
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC−DC converter for EV/HEV
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G
D
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
S
TO−247−3LD
CASE 340CX
V
DSS
1200
−15/+25
−5/+20
V
V
V
Gate−to−Source Voltage
V
GS
Recommended Opera-
tion Values of Gate−to−
Source Voltage
T
C
< 175°C
V
GSop
MARKING DIAGRAM
Continuous Drain
Current R
Steady
State
T
C
= 25°C
I
D
103
A
ꢁ
JC
Power Dissipation R
P
I
535
73
W
A
ꢁ
D
JC
JC
$Y&Z&3&K
NVHL020
N120SC1
Continuous Drain
Current R
Steady
State
T
= 100°C
C
D
ꢁ
JC
Power Dissipation R
P
D
267
412
W
A
ꢁ
Pulsed Drain Current
(Note 2)
T = 25°C
A
I
DM
Single Pulse Surge Drain T = 25°C, t = 10 ꢂ s,
I
807
A
A
p
DSC
Current Capability
R
= 4.7
ꢀ
G
$Y
= onsemi Logo
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
Source Current (Body Diode)
I
S
54
A
NVHL020N120SC1 = Specific Device Code
Single Pulse Drain−to−Source Avalanche
E
AS
264
mJ
Energy (I
= 23 A, L = 1 mH) (Note 3)
L(pk)
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
Package
Shipping
30 Units /
Tube
TO247−3L
NVHL020N120SC1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Note 1)
Junction−to−Ambient (Note 1)
Symbol
Value
0.28
40
Unit
°C/W
°C/W
R
ꢁ
JC
R
ꢁ
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A,
AS
DD
J
AS
V
= 120 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2022 − Rev. 1
NVHL020N120SC1/D
NVHL020N120SC1
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
= 1 mA, referenced to 25_C
−
900
mV/_C
(BR)DSS
J
D
Zero Gate Voltage Drain Current
I
−
−
−
−
−
−
100
250
1
ꢂ
A
V
GS
V
GS
V
GS
= 0 V, V = 1200 V, T = 25_C
DSS
DS
J
= 0 V, V = 1200 V, T = 175_C
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
= +25/−15 V, V = 0 V
DS
ꢂ
A
GSS
Gate Threshold Voltage
V
R
V
= V , I = 20 mA
1.8
−5
−
2.7
−
4.3
+20
28
50
−
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 60 A, T = 25_C
20
35
28
mꢀ
DS(on)
D
J
= 20 V, I = 60 A, T = 175_C
−
D
J
Forward Transconductance
g
FS
= 10 V, I = 60 A
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
2890
260
22
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
GS
DS
C
OSS
RSS
C
Q
V
= −5/20 V, V = 600 V, I = 80 A
203
33
G(tot)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(th)
Q
66
GS
GD
Q
47
R
f = 1 MHz
1.81
ꢀ
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
25
57
−
−
−
−
−
−
−
ns
d(on)
GS
DS
I
= 80 A, R = 2 ꢀ,
G
t
r
Inductive Load
Turn−Off Delay Time
Fall Time
45
d(off)
t
f
11
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
2718
326
3040
ꢂ
J
ON
OFF
TOT
E
E
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
I
V
V
= −5 V, T = 25_C
−
−
−
−
54
A
A
SD
GS
J
Forward Current
Pulsed Drain−to−Source Diode
Forward Current (Note 2)
I
= −5 V, T = 25_C
412
SDM
GS
J
Forward Diode Voltage
V
V
V
= −5 V, I = 30 A, T = 25_C
−
−
−
−
−
3.7
31
−
−
−
−
−
V
ns
nC
ꢂ J
A
SD
GS
SD
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
t
= −5/20 V, I = 80 A,
RR
GS
S
SD
dI /dt = 1000 A/ꢂ s
Q
240
10
RR
E
REC
RRM
I
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVHL020N120SC1
TYPICAL CHARACTERISTICS
250
200
150
100
2.5
V
GS
= 20 V
V
= 16 V
GS
16 V
17 V
2.0
18 V
19 V
19 V
18 V
1.5
17 V
V
= 20 V
GS
1.0
0.5
50
0
0
2
4
6
8
10
0
5
1
50
100
150
200
250
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
160
120
80
1.9
1.7
1.5
1.3
1.1
I
= 60 A
D
I
V
= 60 A
= 20 V
D
GS
T = 150°C
J
40
0
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
120
100
80
300
V
= −5 V
V
= 20 V
GS
DS
T = 25°C
J
60
30
40
T = 25°C
J
T = 175°C
J
20
0
T = −55°C
J
T = 175°C
J
T = −55°C
J
3
2
4
6
8
10
12
14
16
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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3
NVHL020N120SC1
TYPICAL CHARACTERISTICS (continued)
100K
20
V
DD
= 400 V
I
D
= 80 A
V
= 800 V
DD
10K
1K
15
10
5
C
iss
V
= 600 V
DD
C
oss
100
10
1
C
rss
0
f = 1 MHz
= 0 V
V
GS
−5
0
50
100
150
200
250
0.1
1
10
100
800
175
0.1
V
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
DS
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
120
100
80
1000
100
V
= 20 V
GS
T = 25°C
J
60
T = 150°C
J
40
10
1
20
0
Typical performance based
on characterization data
R
= 0.28°C/W
ꢁ
JC
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100K
1000
100
10
Single Pulse
R
= 0.28°C/W
ꢁ
JC
T
C
= 25°C
10K
1K
10 ꢂ s
100 ꢂ s
This area is
limited by R
DS(on)
1 ms
Single Pulse
T = Max Rated
1
J
10 ms
Curve bent to
measured data
R
T
= 0.28°C/W
= 25°C
ꢁ
JC
100 ms
C
0.1
100
0.1
1
10
100
1K
5K
0.00001 0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
NVHL020N120SC1
TYPICAL CHARACTERISTICS (continued)
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Notes:
(t) = r(t) x R
1%
P
DM
Z
ꢁ
ꢁ
JC
JC
0.01
Single Pulse
R
= 0.28°C/W
ꢁ
JC
t
Peak T = P
x Z
(t) + T
JC C
1
ꢁ
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Thermal Response
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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