NVHL025N65S3 [ONSEMI]
单 N 沟道，功率 MOSFET，SUPERFET® III，Easy Drive，650 V，75 A，25 mΩ，TO-247;
| 型号： | NVHL025N65S3 |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，SUPERFET® III，Easy Drive，650 V，75 A，25 mΩ，TO-247 |
| 文件： | 总9页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power,
N-Channel, Automotive
SUPERFET) III, Easy-drive
650 V, 75 A, 25 mW
BV
R
MAX
I MAX
D
DSS
DS(on)
650 V
25 mΩ
ꢀ
ꢁ
ꢂ
V
75 A
D
NVHL025N65S3
G
Description
SuperFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss provide superior switching performance, and with−
stand extreme dv/dt rate. Consequently, SuperFET III MOSFET
Easy−drive series helps manage EMI issues and allows for easier
design implementation.
S
N-Channel MOSFET
Features
• AEC−Q101 Qualified
• Max Junction Temperature 150°C
TO−247−3LD
CASE 340CX
• Typ. R (on) = 19.9 mΩ
DS
• Ultra Low Gate Charge (Typ. Q = 236 nC)
G
MARKING DIAGRAM
• Low Effective Output Capacitance (Typ. C (eff.) = 2062 pF)
OSS
• 100% Avalanche Tested
$Y&Z&3&K
NVHL
• These Devices are Pb−Free and are RoHS Compliant
025N65S3
Typical Applications
• Automotive PHEV−BEV DC−DC Converter
• Automotive Onboard Charger for PHEV−BEV
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
NVHL025N65S3
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
February, 2022 − Rev. 3
NVHL025N65S3/D
NVHL025N65S3
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC Positive
30
V
AC Positive, (f > 1 Hz)
AC Negative, (f > 1 Hz)
Continuous (Tc = 25°C)
Continuous (Tc = 100°C)
Pulsed (Note 1)
30
V
−20
V
I
Drain Current
75
A
D
65.8
300
A
I
Pulsed Drain Current
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche (Note 1)
MOSFET dv/dt
2025
5.95
100
mJ
mJ
V/ns
V/ns
W
AS
AR
E
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(Tc = 25°C)
595
D
Derate Above 25°C
4.76
−55 to +150
300
W/°C
°C
°C
T ,T
Operating and Storage Temperature Range
J
STG
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 15 A, R = 25 Ω, starting T = 25°C.
AS
G
J
3. I < 75 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting T = 25°C.
SD
J
4. Essentially independent of operating temperature typical characteristics.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.21
40
Unit
°C/W
°C/W
R
R
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
θ
J C
J A
θ
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Tube
Shipping (Qty / Packing)
NVHL025N65S3
NVHL025N65S3
TO−247−3LD
30 Units / Tube
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2
NVHL025N65S3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA, T = 25°C
650
650
−
713
755
0.34
−
−
−
V
V
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150°C
GS
D
J
ΔBVDSS / ΔTJ Breakdown Voltage Temperature
I
D
= 1 mA, Referenced to 25°C
V/°C
Coefficient
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
V
GS
= 650 V, V = 0 V
−
−
−
−
0.30
7.92
5.27
2.65
1
μA
DSS
GS
= 520 V, V = 0 V, Tc = 125°C
−
GS
I
Gate to Body Leakage Current
= +30 V, V = 0 V
+100
−100
nA
nA
GSS
DS
= −20 V, V = 0 V
DS
ON CHARACTERISTICS
V
R
Gate to Source Threshold Voltage
V
V
V
V
V
, I = 3.0 mA
2.5
−
3.56
19.9
34.6
78.5
4.5
25
−
V
GS(th)
DS(on)
GS = DS
D
Static Drain to Source On Resistance
= 10 V, I = 37.5 A, T = 25°C
mΩ
mΩ
S
GS
GS
DS
D
J
= 10 V, I = 37.5 A, T = 100°C
−
D
J
g
FS
Forward Transconductance
= 20 V, I = 75 A
−
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
−
7330
197
−
−
−
−
−
−
−
−
−
pF
pF
pF
pF
pF
nC
nC
nC
Ω
iss
oss
rss
DS
GS
C
C
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge
33.6
2062
285
C
V
V
= 0 V to 400 V, V = 0 V
GS
oss(eff.)
DS
C
= 0 V to 400 V, V = 0 V
oss(er.)
DS
GS
Q
236
V
DS
= 400 V, V = 10 V, I = 75 A
g(tot)
GS
D
(Note 4)
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Resistance
59.3
97.3
0.818
gs
Q
gd
R
f = 1 MHz
G
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Fall Time
−
−
−
−
43.3
109
120
107
−
−
−
−
ns
ns
ns
ns
V
= 400 V, I = 75 A, V = 10 V,
d(on)
DD
G
D
GS
R
= 2 Ω (Note 4)
t
r
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Plused Drain to Source Diode Forward Current
−
−
−
−
−
75
300
1.2
A
A
V
S
I
SM
V
SD
Drain to Source Diode Forward
Voltage
V
GS
= 0 V, I = 37.5 A
0.88
SD
t
Reverse Recovery Time
V
GS
= 0 V, I = 75 A dI /dt = 100 A/μs
−
−
714
−
−
nS
rr
SD
F
Q
Reverse Recovery Charge
26.4
μC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVHL025N65S3
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
90
60
30
0
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
25
50
75
100
125
150
T , Case Temperature (°C)
C
T , Case Temperature (°C)
C
Figure 1. Normalized Power Dissipation vs. Case
Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
10
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
0.1
0.01
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P x Z
x R
+ T
J
DM
ꢃ JC
ꢃ
J
C
C
0.001
10−5
10−4
10−3
10−2
10−1
100
t, Rectangular Pulse Duration (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
1000
o
T
= 25
C
C
VGS = 10 V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
150 − T
C
I = I
25
125
100
SINGLE PULSE
10
10−5
10−4
10−3
10−2
10−1
100
101
t, Rectangular Pulse Duration (s)
Figure 4. Peak Current Capability
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4
NVHL025N65S3
TYPICAL CHARACTERISTICS (continued)
1000
100
10
30 us
100 us
1 ms
10 ms
DC
Operation in this area
may be limited by R
DS(on)
1
DC
Rds(on)−limit
10 us
Single Pulse
0.1
0.01
T = Max Rated
J
T
C
= 25°C
1
10
100
1000
V
DS
, Drain−Source Voltage (V)
Figure 5. Forward Bias Safe Operating Area
1000
300
100
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
V
GS
= 0 V
V
DD
= 20 V
100
10
1
T = 150°C
J
10
1
T = 25°C
J
T = 25°C
J
T = 150°C
J
T = −55°C
J
0.1
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Forward Diode Characteristics
Figure 6. Transfer Characteristic
200
100
80
60
40
20
0
250 μs Pulse Width
V
250 μs Pulse Width
T = 150°C
J
GS
T = 25°C
10 V Top
8 V
J
V
GS
150
100
50
10 V Top
8 V
7 V
6.5 V
6 V
7 V
6.5 V
6 V
5.5 V
5 V Bottom
5.5 V
5 V Bottom
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain to Source Voltage (V)
V
DS
, Drain to Source Voltage (V)
Figure 8. Saturation Characteristics
Figure 9. Saturation Characteristics
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5
NVHL025N65S3
TYPICAL CHARACTERISTICS (continued)
3.0
120
100
80
60
40
20
0
Pulse Duration = 250 μs
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
2.5
2.0
1.5
1.0
0.5
0.0
Duty Cycle = 0.5% Max
I
D
= 75 A
T = 150°C
J
I
D
= 75 A
V
GS
= 10 V
T = 25°C
J
−80
−40
0
40
80
120
160
6
7
8
9
10
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (°C)
J
Figure 10. RDSON vs. Gate Voltage
Figure 11. Normalized RDSON vs. Junction
Temperature
1.2
1.0
0.8
0.6
0.4
1.2
1.1
1.0
0.9
0.8
V
I
= V
DS
= 3 mA
GS
I
D
= 10 mA
D
−80
−40
0
40
80
120
160
−80
−40
0
40
80
120
160
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
Figure 12. Normalized Gate Threshold Voltage
vs. Temperature
Figure 13. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10
8
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E−01
I
D
= 75 A
Coss
Ciss
V
= 325 V
DD
V
= 260 V
V
DD
= 390 V
DD
6
4
Crss
2
f = 1 MHz
GS
V
= 0 V
0
0,1
1
10
100
1000
0
50
100
150
200
250
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
G
Figure 14. Capacitance vs. Drain to Source Volatage
Figure 15. Gate Charge vs. Gate to Source Voltage
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6
NVHL025N65S3
TYPICAL CHARACTERISTICS (continued)
50
45
40
35
30
25
20
15
10
5
0.04
0.03
0.02
0.01
VGS = 10 V
VGS = 20 V
T
C
= 25°C
0
0
60
120
180
240
300
0
130
260
390
520
650
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 16. EOSS vs. Drain to Source Voltage
Figure 17. On−Resistance Variation vs. Drain
Current and Gate Voltage
SUPERFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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