NVLJS053N12MCLTAG [ONSEMI]
Power, Single, N-Channel, Shielded Gate, PowerTrench® 120 V, 53 mΩ, 4.5 A;
| 型号： | NVLJS053N12MCLTAG |
| 厂家： | 
ONSEMI |
| 描述： | Power, Single, N-Channel, Shielded Gate, PowerTrench® 120 V, 53 mΩ, 4.5 A 栅 |
| 文件： | 总7页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, Shielded Gate,
PowerTrench)
120 V, 53 mW, 4.8 A
NVLJS053N12MCL
www.onsemi.com
Features
• Shielded Gate MOSFET Technology
• 50% Lower Q than Other MOSFET Suppliers
rr
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• Lowers Switching Noise/EMI
• Low Profile − 0.5 mm Maximum in MicroFET 2x2 mm
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
53 mW @ 10 V
70 mW @ 4.5 V
120 V
4.8 A
N−CHANNEL MOSFET
Typical Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
120
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current (Note 1)
T = 25°C
A
I
D
4.8
A
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Pulsed Drain Current (Note 3)
T = 25°C
P
2.3
0.62
86
W
W
A
A
D
T = 25°C
A
P
D
T = 25°C
A
I
DM
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
UDFN6
(2 X 2)
CASE 517DZ
Single Pulse Drain−to−Source Avalanche
E
AS
885
260
mJ
Energy (I
= 0.8 A) (Note 4)
L(pk)
Maximum Lead Temperature for Soldering
Purposes (1/8″ from case for 10 s)
T
L
°C
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
AA MG
G
THERMAL CHARACTERISTICS
AA = Specific Device Code
Parameter
Symbol
Value
Unit
M
= One Digit Date Code
Thermal Resistance Junction−to−Ambient
R
65.6
°C/W
G
= Pb−Free Package
q
JA
(Note 1)
(Note: Microdot may be in either location)
Thermal Resistance Junction−to−Ambient
R
200
°C/W
q
JA
(Note 2)
2
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. Surface mounted on a FR−4 board using 1 in pad of 2 oz copper.
2. Surface mounted on a FR−4 board using the minimum recommended pad of
2 oz copper.
3. Pulsed ID please refer to Figure 11 SOA graph for more details
4. E of 886 mJ is based on starting T = 25°C; L = 1 mH, I = 0.8 A,
AS
DD
J
AS
V
= 120 V, V = 10 V.
GS
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
August, 2020 − Rev. 0
NVLJS053N12MCL/D
NVLJS053N12MCL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
120
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, referenced to 25°C
D
55
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
GS
= 0 V, V = 120 V, T = 25°C
1
mA
DSS
DS
J
I
V
GS
=
20 V, V = 0 V
100
nA
GSS
DS
V
V
GS
= V , I = 30 mA
1.0
1.5
3.0
V
GS(TH)
DS
D
Gate Threshold Temperature
Coefficient
V
/T
V
GS
= V , I = 30 mA
−4.4
mV/°C
GS(TH)
J
DS
D
Drain−to−Source On Resistance
R
V
= 10 V, I = 5.2 A, T = 25°C
42
55
53
70
mW
mW
DS(on)
GS
D
J
V
GS
= 4.5 V, I = 4.5 A, T = 25°C
D J
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
520
190
1.8
2.0
7.8
3.8
1.5
1.0
17
pF
ISS
V
= 0 V, f = 1 MHz
DS
GS
Output Capacitance
Reverse Transfer Capacitance
Gate−Resistance
C
OSS
C
RSS
V
= 60 V
R
3.0
W
G
Total Gate Charge
Q
G(TOT)
Q
G(4.5V)
nC
4.5 V Gate Charge
V
= 10 V, V = 60 V, I = 5.2 A
DS D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Output Charge
Q
Q
GS
GD
Q
V
GS
= 0 V, V = 60 V
nC
nC
OSS
DD
Total Gate Charge Sync
Q
V
= 0 V, V = 0 ~ 10 V
6.7
SYNC
DS
GS
RESISTIVE SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
5.9
1.6
14
ns
d(on)
t
r
V
= 10 V, V = 60 V,
DS
GS
D
I
= 5.2 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
2.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
V
V
= 0 V, I = 5.2 A, T = 25°C
0.87
25
1.2
V
SD
RR
GS
S
J
t
ns
nC
ns
nC
I = 5.2 A, dI /dt = 300 A/ms
F
s
Q
31
RR
RR
t
15
I = 5.2 A, dI /dt = 1000 A/ms
F
s
Q
64
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse test: pulse width ≤ 300 ms, duty ratio ≤ 2%.
6. Switching characteristics are independent of operating junction temperature
www.onsemi.com
2
NVLJS053N12MCL
TYPICAL CHARACTERISTICS
30
25
20
15
10
3.0
V
GS
= 10 V
6.0 V
3.5 V
4.5 V
V
= 3.0 V
4.5 V
GS
8.0 V
2.5
3.5 V
2.0
6.0 V
3.0 V
1.5
8.0 V
10 V
1.0
0.5
5
0
0
1
2
3
4
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
200
180
160
140
120
100
80
2.0
1.8
1.6
1.4
1.2
1.0
I
D
= 5.2 A
I
V
= 5.2 A
D
= 10 V
GS
T = 125°C
J
60
T = 25°C
J
0.8
0.6
40
20
−75 −50 −25
0
25
50
75 100 125 150
2.5
4.0
, GATE−TO−SOURCE VOLTAGE (V)
GS
5.5
7.0
8.5
10
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
30
10
30
25
20
15
V
GS
= 10 V
T = 25°C
T = −55°C
J
V
DS
= 5 V
J
T = 150°C
J
1
0.1
10
T = 150°C
0.01
J
5
0
T = −55°C
T = 25°C
J
J
0.001
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
1.4
1
2
3
4
5
6
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
www.onsemi.com
3
NVLJS053N12MCL
TYPICAL CHARACTERISTICS
1000
10
8
C
ISS
I
D
= 5.2 A
V
DD
= 30 V
V
DD
= 90 V
C
100
OSS
V
DD
= 60 V
6
4
10
1
C
RSS
f = 1 MHz
= 0 V
2
0
V
GS
0
2
4
6
8
10
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
5
3
2
V
GS
= 10 V
T = 100°C
J
V
GS
= 4.5 V
T = 25°C
J
T = 125°C
J
1
0
R
= 200°C/W
q
JA
1
25
50
75
100
125
150
0.001
0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
10
1
1000
100
V
≤ 10 V
GS
Single Pulse
= 25°C
T
C
10 ms
0.5 ms
T
= 25°C
J(initial)
10
1
T
= 100°C
J(initial)
1 ms
10 ms
Limit
R
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVLJS053N12MCL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10%
5%
10
1
2%
1%
Notes:
qJA (t) = r(t) x RqJA
0.1
Z
RqJA = 2005C/W
Peak TJ = PDM x Z qJA (t) + TA
Duty Cycle, D = t1 / t 2
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Transient Thermal Response Curve
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVLJS053N12MCLTAG
AA
UDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVLJS053N12MCL
PACKAGE DIMENSIONS
UDFN6 2x2, 0.65P
CASE 517DZ
ISSUE A
d
d
f
d
j
m
j
m
j
POWERTRENCH is a registered trademark on Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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