NVMFSC0D9N04C [ONSEMI]
功率 MOSFET，40V，300A，0.92 mΩ，单 N 沟道，SO8-FL;
| 型号： | NVMFSC0D9N04C |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，40V，300A，0.92 mΩ，单 N 沟道，SO8-FL |
| 文件： | 总7页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power,
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
DUAL COOL) N-Channel,
DFN8 5x6
40 V, 0.87 mW, 310 A
40 V
0.87 mW @ 10 V
310 A
N−Channel MOSFET
NVMFSC0D9N04C
Features
• Advanced Dual−sided Cooled Packaging
• Small Footprint (5x6 mm) for Compact Design
• Ulra Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
• MSL1 Robust Packaging Design
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
DFN8 (SO8FL)
CASES 506EG
Continuous Drain
Steady
State
T
C
= 25°C
I
D
313
A
Current R
(Note 2)
q
JC
Power Dissipation
(Note 2)
P
166
W
A
D
R
q
JC
MARKING DIAGRAM
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
48.9
4FAYWZ
q
JA
(Notes 1, 2)
Power Dissipation
P
D
4.1
W
R
(Notes 1, 2)
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
4F
A
Y
W
Z
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
Source Current (Body Diode)
I
S
158
578
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 34 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
300
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Bottom)− Steady State
(Note 2)
R
0.9
°C/W
q
JC
Junction−to−Case (Top) − Steady State (Note 2)
R
R
1.4
37
q
JC
JA
Junction−to−Ambient − Steady State (Note 2)
q
2
1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2023 − Rev. 6
NVMFSC0D9N04C/D
NVMFSC0D9N04C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
5
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
DSS
GS
DS
J
V
= 40 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = +20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
2.5
3.5
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
CHARGES & CAPACITANCES
Input Capacitance
V
/T
I = 250 mA, ref to 25°C
D
−8.6
mV/°C
mW
GS(TH)
J
R
V
GS
= 10 V
I = 50 A
D
0.69
0.87
DS(on)
C
V
= 0 V, f = 1 MHz, V = 25 V
6100
3400
70
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
GS
= 10 V, V = 32 V; I = 50 A
86
G(TOT)
DS
D
Gate−to−Source Charge
Gate−to−Drain Charge
Q
Q
28
GS
GD
GP
14
Plateau Voltage
V
4.9
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
V
= 10 V, V = 32 V,
54
ns
d(ON)
GS
D
DS
I
= 50 A, R = 2.5 W
G
Rise Time
t
r
160
220
170
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.8
0.65
91
1.2
V
SD
GS
J
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
V
= 0 V, dI /dt = 100 A/ms,
ns
RR
GS
S
I
S
= 50 A
t
t
42
a
Discharge Time
49
b
Reverse Recovery Charge
Q
159
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NVMFSC0D9N04C
TYPICAL CHARACTERISTICS
300
10 V to 6.0 V
280
240
200
160
120
80
V
DS
= 10 V
250
200
150
100
4.8 V
5.2 V
4.4 V
T = 25°C
J
50
0
V
GS
= 4.0 V
40
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.00
0.95
T = 25°C
D
J
T = 25°C
J
I
= 50 A
0.90
0.85
0.80
0.75
0.70
0.65
0.60
V
GS
= 10 V
0.5
0
0.55
0.50
3
4
5
6
7
8
9
10
0
50
100
150
200
250
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.E−03
1.E−04
1.E−05
V
I
= 10 V
= 50 A
GS
1.8
1.6
1.4
1.2
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
1.E−06
1.E−07
1.0
0.8
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFSC0D9N04C
TYPICAL CHARACTERISTICS
1E+4
1E+3
10
9
8
7
C
ISS
C
OSS
6
5
4
3
Q
Q
GD
GS
1E+2
1E+1
C
V
DS
= 20 V
RSS
V
= 0 V
2
GS
T = 25°C
J
T = 25°C
J
1
0
I
D
= 50 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Charge
100
1000
V
GS
= 0 V
t
t
d(off)
f
t
r
t
d(on)
100
10
10
V
= 10 V
= 20 V
= 50 A
T = 150°C
GS
J
V
DS
I
D
T = 125°C
T = 25°C T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 100°C
J(initial)
10 ms
T
= 25°C
J(initial)
10
T
C
= 25°C
Single Pulse
≤ 10 V
0.5 ms
1 ms
V
GS
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE(V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMFSC0D9N04C
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
0.001
Single Pulse
0.0001
0.0000001 0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
ORDERING INFORMATION
Device
†
Device Marking
4F
Package
Shipping
NVMFSC0D9N04C
DFN8 5x6
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON84257G
DFN8 5x6.15, 1.27P, DUAL COOL
PAGE 1 OF 1
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