NVMFWS2D3N04XMT1G [ONSEMI]
Single N-Channel Power MOSFET 40 V, 121A, 2.35 mΩ;
| 型号： | NVMFWS2D3N04XMT1G |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 40 V, 121A, 2.35 mΩ |
| 文件： | 总7页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, STD Gate,
SO8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
40 V
2.35 mꢂ @ V = 10 V
121 A
GS
40 V, 2.35 mW, 121 A
D (5)
NVMFWS2D3N04XM
G (4)
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Small Footprint (5 x 6 mm) with Compact Design
• AECQ101 Qualified and PPAP Capable
S (1,2,3)
N−CHANNEL MOSFET
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
DFNW5 (SO−8FL)
CASE 507BA
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
2D3N4W
AYWZZ
V
DSS
Gate−to−Source Voltage
DC
V
20
V
GS
2D3N4W = Specific Device Code
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
I
121
86
A
C
D
A
Y
= Assembly Location
= Year
T
C
W
ZZ
= Work Week
= Assembly Lot Code
Power Dissipation
T
C
P
63
W
A
D
Continuous Drain Current
R
T = 25°C
I
29
A
DA
ꢀ
JA
T = 100°C
21
A
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Pulsed Drain Current
T
= 25°C,
I
688
A
C
p
DM
t = 10 ꢁ s
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
STG
Source Current (Body Diode)
Single Pulse Avalanche Energy
I
52.3
155
A
S
E
AS
mJ
(I = 6.5 A)
PK
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVMFWS2D3N04XM/D
April, 2023 − Rev. 1
NVMFWS2D3N04XM
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
2.4
Unit
Thermal Resistance, Junction−to−Case (Note 2)
R
°C/W
ꢀ
JC
Thermal Resistance, Junction−to−Ambient (Notes 1, 2)
R
41.1
ꢀ
JA
2
1. Surface mounted on FR4 board using 650 mm , 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA, T = 25°C
40
V
(BR)DSS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
ꢃ
V
/
I
D
= 1 mA, Referenced to 25°C
15
mV/°C
(BR)DSS
ꢃ
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 40 V, T = 25°C
10
ꢁ
A
DSS
J
V
= 40 V, T = 125°C
100
100
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 20 V, V = 0 V
nA
GSS
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 20 A, T = 25°C
2.03
2.35
3.5
mꢂ
DS(on)
GS
D
J
V
V
GS
= V , I = 60 ꢁ A, T = 25°C
2.5
V
GS(TH)
DS
D
J
Gate Threshold Voltage Temperature
Coefficient
ꢃ
V
/
V
GS
= V , I = 60 ꢁ A
−7.21
mV/°C
GS(TH)
DS
D
ꢃ
T
J
Forward Trans−conductance
g
FS
V
DS
= 5 V, I = 20 A
89.2
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, V = 25 V, f = 1 MHz
1417
911
15.5
22.2
4.2
pF
nC
ISS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
Q
V
= 10 V, V = 32 V, I = 50 A
G(TOT)
GS DD D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(TH)
Q
6.7
GS
GD
Q
4.3
R
f = 1 MHz
0.93
ꢂ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
Resistive Load,
15.2
5.1
ns
d(ON)
V
GS
I
= 0/10 V, V = 32 V,
D
DD
t
r
= 50 A, R = 0 ꢂ
G
Turn−Off Delay Time
Fall Time
t
23.4
4.2
d(OFF)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V, I = 20 A, T = 25°C
0.82
0.69
98
V
SD
GS
S
J
V
GS
= 0 V, I = 20 A, T = 125°C
S J
Reverse Recovery Time
Charge Time
t
V
GS
= 0 V, I = 50 A,
ns
RR
S
dI/dt = 100 A/ꢁ s, V = 32 V
DD
t
t
45
a
Discharge Time
53
b
Reverse Recovery Charge
Q
245
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVMFWS2D3N04XM
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
400
VGS=4.5V
VGS=5V
T
VDS=5V
J=25°C
350
300
250
200
150
100
50
VGS=5.5V
V
GS=6V
V
GS=7V
GS=8V
VGS=9V
=10V
V
V
GS
T
J=−55°C
T
J=25°C
T
J=175°C
0
0
0
0.5
1
1.5
2
2.5
3
2
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
30
25
20
15
10
5
3
2.5
2
T
J=25°C
T
ID=20A
J=25°C
T
J=175°C
1.5
V
GS=10V
100 120 140 160 180 200
ID, Drain Current (A)
0
1
4
5
6
7
8
9
10
20
40
60
80
VGS, Gate to Source Voltage (V)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
1.8
1.6
1.4
1.2
1
100000
I
D=20A
VGS=10V
10000
1000
100
10
1
TJ=25C
TJ=85C
TJ= 125C
TJ= 150C
TJ= 175C
0.8
0.1
0.6
−75 −50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T
VDS, Drain to Source Voltage (V)
J, Junction Temperature (°C)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFWS2D3N04XM
TYPICAL CHARACTERISTICS
10000
1000
100
10
VGS=0V
ID=50A
T
J=25°C
f=1MHz
8
6
4
2
0
C
V
DD=8V
VDD=24V
DD=32V
ISS
OSS
RSS
C
C
V
10
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1e−06
1e−07
1e−08
1e−09
1000
100
VGS=10V
VDS=32V
ID=50A
VGS=0V
10
1
0.1
0.01
0.001
0.0001
td(on)
td(off)
tr
T
J=175°C
T
J=25°C
tf
T
J=−55°C
1
10
G, Gate Resistance (ꢂ )
100
0
0.2
0.4
0.6
0.8
1
1.2
R
VSD, Body Diode Forward Voltage (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
10
TC=25°C
T Initial
=25°C
J
Single Pulse
=150°C
TJ Initial
Limited by RDS(ON)
10
@T
J=175°C
1
1
pulseDuration=0.5ms
pulseDuration=1ms
pulseDuration=10ms
0.1
0.1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
VDS, Drain to Source Voltage (V)
tAV ,Time in Avalanche (sec)
Figure 11. Safe Operating Area (SOA)
Figure 12. Avalanche Current vs Pulse Time
(UIS)
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4
NVMFWS2D3N04XM
TYPICAL CHARACTERISTICS
100
10
1
@50% Duty Cycle
@20% Duty Cycle
@10% Duty Cycle
@5% Duty Cycle
@2% Duty Cycle
@1% Duty Cycle
Single Pulse
0.1
Z
Notes:
P
DM
T
=PDMxZθJA(t)+T
JM
A
t
1
Duty Cycle,D=t1/t2
t
2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, Rectangular Pulse Duration (sec)
Figure 13. Transient Thermal Response
ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFWS2D3N04XMT1G
2D3N4W
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFWS2D3N04XM
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
ꢀ
ꢀ
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6
NVMFWS2D3N04XM
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