NXH400N100H4Q2F2SG [ONSEMI]
SiC Hybrid Module, I-Type NPC 1000 V, 400 A IGBT, 1200 V, 100 A SiC Diode;
| 型号： | NXH400N100H4Q2F2SG |
| 厂家： | 
ONSEMI |
| 描述： | SiC Hybrid Module, I-Type NPC 1000 V, 400 A IGBT, 1200 V, 100 A SiC Diode PC 双极性晶体管 |
| 文件： | 总19页 (文件大小：2374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Si/SiC Hybrid Module –
EliteSiC, I-Type NPC 1000 V,
400 A IGBT, 1200 V,
100 A SiC Diode, Q2 Package
NXH400N100H4Q2F2PG,
NXH400N100H4Q2F2SG,
NXH400N100H4Q2F2SG-R
Q2PACK INPC PRESS FIT PINS
PIM42, 93x47 (PRESSFIT)
CASE 180BH
This high−denity, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes.
Features
• Extremely Efficient Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Module Design Offers High Power Density
• Low Inductive Layout
• Low Package Height
Q2PACK INPC SOLDER PINS
PIM44, 93x47 (SOLDER PIN)
CASE 180BS
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
MARKING DIAGRAM
• Solar Inverters
• Uninterruptable Power Supplies Systems
NXH400N100H4Q2F2PG/SG
ATYYWW
NXH400N100H4Q2F2PG/SG = Specific Device Code
G
AT
= Pb−Free Package
= Assembly & Test Site
Code
YYWW
= Year and Work Week
Code
PIN CONNECTIONS
See details pin connections on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Figure 1. NXH400N100H4Q2F2PG/SG/SG−R Schematic
Diagram
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
NXH400N100H4Q2F2/D
March, 2023 − Rev. 4
NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
PIN CONNECTIONS
G2
40
E2
39
Ph1 Ph1 Ph1 Ph1 Ph1
38 37 36 35 34
Ph2 Ph2 Ph2 Ph2 Ph2
33 32 31 30 29
NTC1 NTC2
42 41
28
SP
27
26
E3
25
SN
G3
24
G1
23
E1
G4
E4
22
21
19
15
11
N2
12
N2
13
N2
14
N2
6
N1
7
N1
8
N1
9
N1
10
N1
16
17
18
20
1
2
3
4
5
N2
DC− DC− DC− DC− DC−
DC+ DC+ DC+ DC+ DC+
Figure 2. Pin Connections
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
OUTER IGBT (T1, T4)
Symbol
Value
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
V
1000
V
V
CES
V
20
30
GE
Positive Transient Gate−Emitter Voltage (T
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C
I
409
1227
959
A
A
C
C
Pulsed Peak Collector Current @ T = 80°C (T = 150°C)
I
C(Pulse)
C
J
Maximum Power Dissipation (T = 150°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
INNER IGBT (T2, T3)
T
−40
175
JMIN
T
JMAX
Collector-Emitter Voltage
V
1000
V
V
CES
Gate-Emitter Voltage
Positive Transient Gate−Emitter Voltage (T
V
20
30
GE
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C
I
360
1080
805
A
A
C
C
Pulsed Peak Collector Current @ T = 80°C (T = 150°C)
I
C(Pulse)
C
J
Maximum Power Dissipation (T = 175°C)
P
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
IGBT INVERSE DIODE (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage
T
−40
175
JMIN
T
JMAX
V
1000
192
V
A
A
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C)
I
576
J
FRM
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2
NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted) (continued)
J
Rating
Symbol
Value
Unit
IGBT INVERSE DIODE (D1, D2, D3, D4)
Maximum Power Dissipation (T = 175°C)
P
482
−40
175
W
°C
°C
J
tot
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
NEUTRAL POINT DIODE (D5, D6)
Peak Repetitive Reverse Voltage
T
JMIN
T
JMAX
V
RRM
1200
140
420
401
−40
175
V
A
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C)
I
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
tot
W
°C
°C
J
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
T
JMIN
T
JMAX
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and/or APPLICATION INFORMATION for Safe Operating parameters.
THERMAL AND INSULATION PROPERTIES (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
THERMAL PROPERTIES
Operating Temperature under Switching Condition
Storage Temperature Range
T
−40 to 150
−40 to 125
°C
°C
VJOP
T
stg
INSULATION PROPERTIES
Isolation Test Voltage, t = 2 s, 50 Hz (Note 3)
Creepage Distance
V
is
4000
12.7
V
RMS
mm
Comparative Tracking Index
CTI
>600
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS and/or APPLICATION INFORMATION for Safe Operating parameters.
3. 4000 VAC
for 1 second duration is equivalent to 3333 VAC
for 1 minute duration.
RMS
RMS
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3
NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
OUTER IGBT (T1, T4) CHARACTERISTICS
Collector-Emitter Cutoff Current
V
V
V
V
V
= 0 V, V = 1000 V
I
CES
–
–
–
1.77
2.11
5.1
500
2.3
–
mA
GE
GE
GE
GE
GE
CE
Collector-Emitter Saturation Voltage
= 15 V, I = 400 A, T = 25°C
V
V
V
C
J
CE(sat)
= 15 V, I = 400 A, T = 150°C
–
C
J
Gate-Emitter Threshold Voltage
Gate Leakage Current
Internal Gate Resistor
Turn-on Delay Time
= V , I = 400 mA
4.1
–
6.1
2000
−
V
nA
W
CE
C
GE(TH)
=
20 V, V = 0 V
I
–
CE
GES
R
−
–
1.44
151
35
G
T = 25°C
t
–
ns
J
d(on)
V
V
= 600 V, I = 150 A
CE
GE
R
C
Rise Time
t
r
–
–
= −8 V, 15 V, R
= 6 W,
Gon
= 11 W
Goff
Turn-off Delay Time
t
–
551
68
–
d(off)
Fall Time
t
f
–
–
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
E
E
–
3270
5100
146
40
–
mJ
on
off
–
–
T = 125°C
t
t
–
–
ns
J
V
V
d(on)
= 600 V, I = 150 A
CE
GE
C
Rise Time
t
–
–
r
= −8 V, 15 V, R
= 11 W
= 6 W,
Gon
R
Goff
Turn-off Delay Time
–
626
88
–
d(off)
Fall Time
t
–
–
f
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Input Capacitance
E
E
–
4165
8420
26093
1012
104
1304
–
mJ
on
off
–
–
V
= 20 V, V = 0 V, f = 1 MHz
C
–
–
pF
CE
GE
ies
oes
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
C
–
–
res
V
CE
V
GE
= 600 V, I = 300 A,
Q
g
–
–
nC
C
= −15 V~15 V
Thermal Resistance −
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
R
–
–
0.181
0.073
–
–
K/W
K/W
thJH
thJC
Chip-to-Heatsink
Thermal Resistance − Chip-to-Case
NEUTRAL POINT DIODE (D5, D6) CHARACTERISTICS
Diode Forward Voltage
I = 100 A, T = 25°C
V
F
–
–
–
–
–
–
1.50
2.07
19
1.85
V
F
J
I = 100 A, T = 150°C
–
–
–
–
–
F
J
Reverse Recovery Time
T = 25°C
t
rr
ns
nC
A
J
V
V
= 600 V, I = 150 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
229
19
rr
= −8 V, 15 V, R = 6 W
G
I
RRM
Peak Rate of Fall of Recovery
Current
di/dt
6053
A/ms
Reverse Recovery Energy
Reverse Recovery Time
E
–
–
–
–
–
164
34
–
–
–
–
–
mJ
ns
rr
T = 125°C
t
rr
J
V
V
= 600 V, I = 150 A
C
CE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
359
17
nC
A
rr
= −8 V, 15 V, R = 6 W
GE
G
I
RRM
Peak Rate of Fall of Recovery
Current
di/dt
4621
A/ms
Reverse Recovery Energy
E
–
–
211
–
–
mJ
rr
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
0.364
K/W
thJH
Thermal Resistance − Chip-to-Case
R
–
0.237
–
K/W
thJC
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
INNER IGBT (T2, T3) CHARACTERISTICS
Collector-Emitter Cutoff Current
V
V
V
V
V
= 0 V, V = 1000 V
I
CES
–
–
–
1.77
2.11
5.1
500
2.3
–
mA
GE
GE
GE
GE
GE
CE
Collector-Emitter Saturation Voltage
= 15 V, I = 400 A, T = 25°C
V
V
V
C
J
CE(sat)
= 15 V, I = 400 A, T = 150°C
–
C
J
Gate-Emitter Threshold Voltage
Gate Leakage Current
Internal Gate Resistor
Turn-on Delay Time
= V , I = 400 mA
4.1
–
6.1
2000
−
V
nA
W
CE
C
GE(TH)
=
20 V, V = 0 V
I
–
CE
GES
R
−
–
1.44
149
37
G
T = 25°C
t
–
ns
J
d(on)
V
V
= 600 V, I = 150 A
CE
GE
R
C
Rise Time
t
r
–
–
= −8 V, 15 V, R
Goff
= 6 W,
Gon
= 23 W
Turn-off Delay Time
t
–
882
35
–
d(off)
Fall Time
t
f
–
–
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
E
–
4970
6010
146
42
–
mJ
on
off
E
–
–
T = 125°C
t
t
–
–
ns
J
V
V
d(on)
= 600 V, I = 150 A
CE
GE
C
Rise Time
t
–
–
r
= −8 V, 15 V, R
= 23 W
= 6 W,
Gon
R
Goff
Turn-off Delay Time
–
977
12
–
d(off)
Fall Time
t
–
–
f
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Input Capacitance
E
E
–
7790
8530
26093
1012
104
1304
–
mJ
on
off
–
–
V
= 20 V, V = 0 V, f = 1 MHz
C
–
–
pF
CE
GE
ies
oes
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
C
–
–
res
V
CE
V
GE
= 600 V, I = 300 A,
Q
g
–
–
nC
C
= 15 V
Thermal Resistance −
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
R
–
–
0.207
0.087
–
–
K/W
K/W
thJH
thJC
Chip-to-Heatsink
Thermal Resistance − Chip-to-Case
IGBT INVERSE DIODE (D1, D2, D3, D4) CHARACTERISTICS
Diode Forward Voltage
I = 150 A, T = 25°C
V
F
–
–
–
–
–
–
2.0
1.77
105
4179
97
2.6
–
V
F
J
I = 150 A, T = 150°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
–
ns
nC
A
J
V
V
= 600 V, I = 150 A
C
CE
GE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
–
rr
= −8 V, 15 V, R = 6 W
G
I
–
RRM
Peak Rate of Fall of Recovery
Current
di/dt
4571
–
A/ms
Reverse Recovery Energy
Reverse Recovery Time
E
–
–
–
–
–
950
179
–
–
–
–
–
mJ
ns
rr
T = 125°C
t
rr
J
V
V
= 600 V, I = 150 A
C
CE
Reverse Recovery Charge
Peak Reverse Recovery Current
Q
11900
132
nC
A
rr
= −8 V, 15 V, R = 6 W
GE
G
I
RRM
Peak Rate of Fall of Recovery
Current
di/dt
4167
A/ms
Reverse Recovery Energy
E
–
–
3750
–
–
mJ
rr
Thermal Resistance −
Chip-to-Heatsink
Thermal grease,
Thickness = 2.1 Mil 2%
l = 2.9 W/mK
R
0.316
K/W
thJH
Thermal Resistance − Chip-to-Case
R
–
0.197
–
K/W
thJC
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
THERMISTOR CHARACTERISTICS
Nominal Resistance
Nominal Resistance
Deviation of R25
Test Conditions
Symbol
Min
Typ
Max
Unit
T = 25°C
R
–
–
22
1486
–
–
–
5
–
–
−
−
kW
W
25
T = 100°C
R
100
DR/R
−5
–
%
Power Dissipation
P
D
200
2
mW
mW/K
K
Power Dissipation Constant
B-value
–
B (25/50), tolerance 3%
B (25/100), tolerance 3%
–
3950
3998
B-value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Marking
Package
Shipping
NXH400N100H4Q2F2PG
PRESS FIT PINS
NXH400N100H4Q2F2PG
PIM42, 93x47 (PRESSFIT)
(Pb−Free/Halide−Free)
12 Units / Blister Tray
NXH400N100H4Q2F2SG,
NXH400N100H4Q2F2SG−R
SOLDER PINS
NXH400N100H4Q2F2SG,
NXH400N100H4Q2F2SG−R
PIM44, 93x47 (SOLDER PIN)
12 Units / Blister Tray
(Pb−Free/Halide−Free)
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE
Figure 3. Typical Output Characteristics – Inner IGBT
Figure 4. Typical Output Characteristics – Inner IGBT
Figure 5. Transfer Characteristics – Inner IGBT
Figure 6. Saturation Voltage Characteristic
Figure 7. Inverse Diode Forward Characteristics
Figure 8. Buck Diode Forward Characteristics
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL CHARACTERISTICS – OUTER IGBT
Figure 9. Typical Turn ON Loss vs. IC
Figure 10. Typical Turn OFF Loss vs. IC
Figure 11. Typical Turn On Loss vs. Rg
Figure 12. Typical Turn Off Loss vs. Rg
Figure 13. Typical Turn−Off Switching Time vs. IC
Figure 14. Typical Turn−On Switching Time vs. IC
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL CHARACTERISTICS – OUTER IGBT (CONTINUED)
Figure 15. Typical Turn−Off Switching Time vs. Rg
Figure 16. Typical Turn−On Switching Time vs. Rg
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL CHARACTERISTICS – INNER IGBT
Figure 17. Typical Turn On Switching Time vs. IC
Figure 18. Typical Turn Off Switching Time vs. IC
Figure 19. Typical Turn On Switching Time vs. RG
Figure 20. Typical Turn Off Switching Time vs. RG
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL CHARACTERISTICS – INNER IGBT (CONTINUED)
Figure 23. Typical Turn−Off Switching Time vs. IC
Figure 24. Typical Turn−On Switching Time vs. IC
Figure 21. Typical Turn−Off Switching Time vs. Rg
Figure 22. Typical Turn−On Switching Time vs.Rg
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL SWITCHING CHARACTERISTICS – NEUTRAL POINT DIODE
Figure 25. Typical Reverse Recovery Energy
Loss vs. IC
Figure 26. Typical Reverse Recovery Energy
Loss vs. Rg
Figure 27. Typical Reverse Recovery Time vs. Rg
Figure 28. Typical Reverse Recovery Charge vs. Rg
Figure 29. Typical Reverse Recovery Peak
Current vs. Rg
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL CHARACTERISTICS – INVERSE DIODE
Figure 30. Typical Reverse Recovery Energy
Loss vs. IC
Figure 31. Typical Reverse Recovery Energy
Loss vs. Rg
Figure 32. Typical Reverse Recovery Time vs. Rg
Figure 33. Typical Reverse Recovery Charge vs. Rg
Figure 34. Typical Reverse Recovery Peak
Current vs. Rg
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE
Figure 35. FBSOA − Outer IGBT
Figure 36. RBSOA − Outer IGBT
Figure 37. FBSOA − Inner IGBT
Figure 38. RBSOA − Inner IGBT
Figure 39. Gate Voltage vs. Gate Charge
Figure 40. Capacitance Charge
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE (CONTINUED)
Figure 41. Thermistor Characteristics
Figure 42. Transient Thermal Impedance – Outer IGBT
Figure 43. Transient Thermal Impedance – Inner IGBT
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NXH400N100H4Q2F2PG, NXH400N100H4Q2F2SG, NXH400N100H4Q2F2SG−R
TYPICAL CHARACTERISTICS – IGBT, INVERSE DIODE AND NEUTRAL POINT DIODE (CONTINUED)
Figure 44. Transient Thermal Impedance – Inverse Diode
Figure 45. Transient Thermal Impedance – Neutral Point Diode
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM42, 93x47 (PRESSFIT)
CASE 180BH
ISSUE O
DATE 06 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON09951H
PIM42 93X47 (PRESS FIT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2019
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM42, 93x47 (SOLDER PIN)
CASE 180BS
ISSUE O
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
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98AON15232H
PIM42 93X47 (SOLDER PIN)
PAGE 1 OF 1
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