NXH35C120L2C2S1G [ONSEMI]
IGBT Module, CIB 1200 V, 35 A IGBT;型号: | NXH35C120L2C2S1G |
厂家: | ONSEMI |
描述: | IGBT Module, CIB 1200 V, 35 A IGBT 双极性晶体管 |
文件: | 总10页 (文件大小:552K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TMPIM 35 A CIB/CI Module
Product Preview
NXH35C120L2C2SG/S1G
The NXH35C120L2C2SG is a transfer−molded power module
containing a converter−inverter−brake circuit consisting of six 35 A,
1600 V rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, one
35 A, 1200 V brake IGBT with brake diode and an NTC thermistor.
The NXH35C120L2C2S1G is a transfer−molded power module
containing a converter−inverter circuit consisting of six 35 A, 1600 V
rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, and an NTC
thermistor.
www.onsemi.com
Features
• Low Thermal Resistance
• 6 mm Clearance Distance from Pin to Heatsink
• Compact 73 mm × 40 mm × 8 mm Package
• Solderable Pins
• Thermistor
TMPIM DIP52
CASE 181AD
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Industrial Motor Drives
• Servo Drives
MARKING DIAGRAM
DBPLUS
P
GUP
U
GVP
V
GWP
W
R
S
T
B
GB
GUN
GVN
GWN
TH1
TH2
DBMINUS
NB
NU
NV
NW
ORDERING INFORMATION
Figure 1. NXH35C120L2C2SG Schematic Diagram
Device
Package
Shipping
DBPLUS
P
NXH35C120L2C2SG
TMPIM
DIP52
6 Units /
Tube
(Pb−Free)
NXH35C120L2C2S1G
TMPIM
DIP52
(Pb−Free)
6 Units /
Tube
GUP
U
GVP
V
GWP
W
R
S
T
GUN
GVN
GWN
This document contains information on a product under
development. ON Semiconductor reserves the right to
change or discontinue this product without notice.
TH1
TH2
DBMINUS
NU
NV
NW
Figure 2. NXH35C120L2C2S1G Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2020 − Rev. P1
NXH35C120L2C2/D
NXH35C120L2C2SG/S1G
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
A
A
CES
V
GE
Continuous Collector Current @ T = 80°C (T
= 175°C)
= 175°C)
I
C
35
c
VJmax
Pulsed Collector Current
DIODE
I
105
Cpulse
Peak Repetitive Reverse Voltage
V
RRM
1200
35
V
A
A
Continuous Forward Current @ T = 80°C (T
I
F
c
VJmax
Repetitive Peak Forward Current (T = 175°C)
I
105
46
J
FRM
2
2
2
I t Value (60 Hz single half−sine wave)
I t
A t
RECTIFIER DIODE
Peak Repetitive Reverse Voltage
V
1600
35
V
A
A
RRM
Continuous Forward Current @ T = 80°C (T
= 150°C)
I
F
c
VJmax
Repetitive Peak Forward Current (T = 150°C)
I
105
J
FRM
2
2
2
I t Value
I t
A t
(60 Hz single half−sine wave) @ 25°C
(60 Hz single half−sine wave) @ 150°C
1126
510
Surge Current (10 ms sin180°) @ 25°C
THERMAL PROPERTIES
Storage Temperature Range
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 50 Hz
Internal Isolation
I
520
A
FSM
T
−40 to +125
°C
stg
V
is
3000
AI2O3
6.0
V
RMS
Creepage Distance
mm
mm
Clearance Distance
6.0
Comperative Tracking Index
CTI
> 400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
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2
NXH35C120L2C2SG/S1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
V
V
V
V
= 0 V, V = 1200 V
I
CES
–
–
–
250
2.4
–
mA
GE
GE
GE
GE
GE
CE
= 15 V, I = 35 A, T = 25°C
V
V
1.8
V
C
J
CE(sat)
= 15 V, I = 35 A, T = 150°C
–
1.9
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
Rise Time
= V , I = 4.25 mA
4.8
–
6
6.8
400
–
V
CE
C
GE(TH)
= 20 V, V = 0 V
I
–
nA
ns
CE
GES
T = 25°C
t
–
104
64
J
d(on)
V
V
= 600 V, I = 35 A
CE
GE
C
t
r
–
–
=
15 V, R = 15 W
G
Turn−off Delay Time
Fall Time
t
–
277
53
–
d(off)
t
f
–
–
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
E
–
2900
1200
168
72
–
mJ
on
off
E
–
–
T = 150°C
t
t
–
–
ns
J
V
V
d(on)
= 600 V, I = 35 A
CE
GE
C
t
–
–
r
=
15 V, R = 15 W
G
Turn−off Delay Time
Fall Time
–
320
165
4030
2200
8333
298
175
360
–
d(off)
t
–
–
f
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Input Capacitance
E
on
E
off
–
–
mJ
–
–
V
CE
= 20 V, V = 0 V, f = 100 kHz
C
–
–
pF
GE
ies
oes
Output Capacitance
C
–
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
res
V
CE
V
GE
= 600 V, I = 35 A,
= 0 V ~ +15 V
Q
g
–
–
nC
C
Temperature under Switching
Conditions
Tvj op
–40
−
150
°C
Thermal Resistance − Chip−to−Case
R
R
–
–
0.57
0.97
–
–
°C/W
°C/W
thJC
thJH
Thermal Resistance −
Chip−to−Heatsink
Thermal grease, Thickness ≈ 3 mil,
l = 2.8 W/mK
DIODE CHARACTERISTICS
Brake Diode Reverse Leakage Current V = 1200 V
I
–
–
−
2.2
2
200
2.7
–
mA
R
R
Diode Forward Voltage
I = 35 A, T = 25°C
V
F
V
F
J
I = 35 A, T = 150°C
–
F
J
Reverse Recovery Time
T = 25°C
t
–
224
1.51
18
–
ns
mC
A
J
V
V
rr
= 600 V, I = 35 A
CE
GE
C
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Q
rr
RRM
–
–
=
15 V, R = 15 W
G
I
–
–
E
–
410
532
5.36
30
–
mJ
ns
mC
A
rr
T = 150°C
t
rr
–
–
J
V
V
= 600 V, I = 35 A
CE
GE
C
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Q
rr
RRM
–
–
=
15 V, R = 15 W
G
I
–
–
E
–
1983
−
–
mJ
°C
rr
Temperature under Switching
Conditions
Tvj op
–40
150
Thermal Resistance − Chip−to−Case
R
R
–
–
0.94
1.5
–
–
°C/W
°C/W
thJC
thJH
Thermal Resistance −
Chip−to−Heatsink
Thermal grease, Thickness ≈ 3 mil,
l = 2.8 W/mK
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3
NXH35C120L2C2SG/S1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
RECTIFIER DIODE CHARACTERISTICS
Rectifier Reverse Leakage Current
Rectifier Forward Voltage
V
= 1600 V
I
–
–
−
1.1
1
200
1.5
–
mA
R
R
I = 35 A, T = 25°C
F
V
F
V
J
I = 35 A, T = 150°C
F
–
J
Temperature under Switching
Conditions
Tvj op
–40
−
150
°C
Thermal Resistance − Chip−to−Case
R
R
–
–
0.55
1.28
–
–
°C/W
°C/W
thJC
thJH
Thermal Resistance −
Chip−to−Heatsink
Thermal grease, Thickness ≈ 3 mil,
l = 2.8 W/mK
THERMISTOR CHARACTERISTICS
Nominal Resistance
Nominal Resistance
Deviation of R25
T = 25°C
R
–
–
5
493.3
–
–
–
5
–
–
–
–
kW
W
25
T = 100°C
R
100
DR/R
−5
–
%
Power Dissipation
Power Dissipation Constant
B−value
P
20
mW
mW/K
K
D
–
1.4
B(25/50), tolerance 2%
B(25/100), tolerance 2%
–
3375
3433
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NXH35C120L2C2SG/S1G
TYPICAL CHARACTERISTICS − INVERTER/BRAKE IGBT & DIODE
105
90
75
60
45
30
15
0
105
25°C
150°C
90
V
GE
= 20 V
V
GE
= 20 V
75
60
45
30
15
0
V
GE
= 11 V
V
GE
= 11 V
0.0
1.0
2.0
3.0
4.0
0.0
1.0
2.0
3.0
4.0
V
CE
, Collector−Emitter Voltage (V)
V
CE
, Collector−Emitter Voltage (V)
Figure 3. IGBT Typical Output Characteristic
Figure 4. IGBT Typical Output Characteristic
105
90
75
60
45
30
15
0
105
90
75
60
45
30
15
0
150°C
150°C
25°C
25°C
0
2
4
6
8
10
12
14
0.0
1.0
2.0
3.0
4.0
V
GE
, Gate−Emitter Voltage (V)
V , Forward Voltage (V)
F
Figure 5. IGBT Typical Transfer Characteristic
Figure 6. Diode Typical Forward Characteristic
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5
NXH35C120L2C2SG/S1G
TYPICAL CHARACTERISTICS − INVERTER/BRAKE IGBT & DIODE (Continued)
12.0
10.0
3.5
V
V
R
= 600 V
= −15 V/15 V
= 15 W
V
V
R
= 600 V
= −15 V/15 V
= 15 W
CE
CE
3.0
GE
GE
G
G
2.5
2.0
1.5
8.0
6.0
4.0
150°C
150°C
25°C
1.0
0.5
0.0
25°C
2.0
0.0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
I
C
(A)
I (A)
C
Figure 7. Typical Turn On Loss vs IC
Figure 8. Typical Turn Off Loss vs IC
3.5
3.0
18
V
V
R
= 600 V
= −15 V/15 V
= 15 W
V
= 600 V
= 15 V
CE
CE
V
GE
GE
15
12
9
I = 35 A
C
G
2.5
2.0
1.5
150°C
6
1.0
0.5
0.0
25°C
3
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
0
50
100 150 200 250
300 350 400
I (A)
f
Charge (nC)
Figure 9. Typical Reverse Recovery Energy vs IC
Figure 10. Gate Voltage vs. Gate Charge
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6
NXH35C120L2C2SG/S1G
TYPICAL CHARACTERISTICS − INVERTER/BRAKE IGBT & DIODE (Continued)
10
1
50%
20%
10%
5%
0.1
0.01
2%
1%
Single Pulse
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse on Time (s)
Figure 11. IGBT Junction−to−Heatsink Transient Thermal Impedance
10
1
50%
20%
10%
5%
0.1
0.01
2%
1%
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse on Time (s)
Figure 12. Diode Junction−to−Heatsink Transient Thermal Impedance
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7
NXH35C120L2C2SG/S1G
TYPICAL CHARACTERISTICS − RECTIFIER
135
90
45
0
150°C
25°C
0
0.5
1.0
1.5
2.0
V , Forward Voltage (V)
F
Figure 13. Rectifier Typical Forward Characteristic
10
1
50%
20%
10%
5%
0.1
0.01
2%
1%
Single Pulse
0.0001
0.00001
0.001
0.01
0.1
1
10
Pulse on Time (s)
Figure 14. Rectifier Junction−to−Heatsink Transient Thermal Impedance
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DIP26 67.8x40
CASE 181AD
ISSUE B
DATE 05 AUG 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXX
ZZZATYWW
XXX = Specific Device Code
ZZZ = Assembly Lot Code
AT = Assembly & Test Location
Y
= Year
WW = Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON09519H
DIP26 67.8x40
PAGE 1 OF 1
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