NXH35C120L2C2ESG [ONSEMI]
IGBT Module, CIB 1200 V, 35 A IGBT - DBC with enhanced thermal conductivity;
| 型号： | NXH35C120L2C2ESG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT Module, CIB 1200 V, 35 A IGBT - DBC with enhanced thermal conductivity 双极性晶体管 |
| 文件： | 总9页 (文件大小：612K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TMPIM 35 A Enhances CIB
Module
NXH35C120L2C2ESG
The NXH35C120L2C2ESG is a transfer−molded power module
with low thermal resistance substrate containing a
converter−inverter−brake circuit consisting of six 35 A, 1600 V
rectifiers, six 35 A, 1200 V IGBTs with inverse diodes, one 35 A, 1200
V brake IGBT with brake diode and an NTC thermistor.
www.onsemi.com
Features
• Low Thermal Resistance Substrate for Low Thermal Resistance
• 6 mm Clearance Distance between Pin to Heatsink
• Compact 73 mm × 40 mm × 8 mm Package
• Solderable Pins
• Thermistor
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
DIP26 67.8x40
CASE 181AD
Typical Applications
• Industrial Motor Drives
• Servo Drives
MARKING DIAGRAM
DBPLUS
P
GUP
U
GVP
V
GWP
W
R
S
T
B
GB
GUN
GVN
GWN
TH1
TH2
ORDERING INFORMATION
†
DBMINUS
NB
NU
NV
NW
Device
Package
Shipping
DIP26
(Pb−Free)
6 Units /
Tube
NXH35C120L2C2ESG
Figure 1. NXH35C120L2C2ESG Schematic Diagram
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
NXH35C120L2C2ESG/D
October, 2020 − Rev. 1
NXH35C120L2C2ESG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
V
1200
20
V
V
A
A
CES
V
GE
Continuous Collector Current @ T = 80°C (Tv
= 175°C)
= 175°C)
= 150°C)
I
C
35
C
Jmax
Jmax
Jmax
Pulsed Collector Current
DIODE
I
105
Cpulse
Peak Repetitive Reverse Voltage
V
RRM
1200
35
V
A
A
Continuous Forward Current @ T = 80°C (Tv
I
F
C
Repetitive Peak Forward Current
RECTIFIER DIODE
I
105
FRM
Peak Repetitive Reverse Voltage
V
RRM
1600
35
V
A
A
Continuous Forward Current @ T = 80°C (Tv
I
F
C
Repetitive Peak Forward Current
I
105
FRM
2
2
2
I t value (10 ms single half−sine wave) @ 25°C
(10 ms single half−sine wave) @ 150°C
I t
1126
510
A t
Surge current (10 ms sin180°) @ 25°C
THERMAL PROPERTIES
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 50Hz
Internal isolation
IFSM
520
A
T
stg
−40 to 125
°C
V
is
3000
HPS
6.0
V
RMS
Creepage distance
mm
mm
Clearance distance
6.0
Comperative Tracking Index
CTI
> 400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
www.onsemi.com
2
NXH35C120L2C2ESG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
V
V
V
V
= 0 V, V = 1200 V
I
CES
–
–
–
250
2.4
–
μA
GE
GE
GE
GE
GE
CE
V
V
V
= 15 V, I = 35 A, T = 25°C
1.8
CE(sat)
C
J
= 15 V, I = 35 A, T = 150°C
–
1.9
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
Rise Time
= V , I = 4.25 mA
4.8
–
6
6.8
400
–
V
CE
C
GE(TH)
= 20 V, V = 0 V
I
–
nA
ns
CE
GES
T = 25 °C
t
–
104
64
J
d(on)
V
V
= 600 V, I = 35 A
CE
GE
C
t
r
–
–
=
15 V, R = 15 W
G
Turn−off Delay Time
Fall Time
t
–
277
53
–
d(off)
t
f
–
–
mJ
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
E
–
2900
1200
168
72
–
on
off
E
–
–
T = 150°C
ns
t
t
–
–
J
d(on)
V
V
= 600 V, I = 35 A
CE
GE
C
t
–
–
r
=
15 V, R = 15 W
G
Turn−off Delay Time
Fall Time
–
320
165
4030
2200
8333
298
175
360
–
d(off)
t
–
–
f
mJ
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
on
E
off
–
–
–
–
V
CE
= 20 V. V = 0 V
pF
C
–
–
GE
ies
oes
f = 100 kHz
Output Capacitance
C
–
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
res
V
CE
V
GE
= 600 V, I = 35 A,
= 0 V ~ +15 V
Q
g
–
–
nC
C
Temperature under switching conditions
Tvj op
RthJH
−40
150
–
°C
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness − 3 mil,
l = 2.8 W/mK
–
0.83
°C/W
DIODE CHARACTERISTICS
Brake Diode Reverse Leakage Current
Diode Forward Voltage
VR = 1200 V
IR
–
–
–
–
2.2
2
200
2.7
–
mA
V
F
V
I = 35 A, T = 25°C
F
J
I = 35 A, T = 150°C
F
J
T = 25°C
Reverse Recovery Time
t
224
1.51
18
ns
μC
A
J
rr
V
V
= 600 V, I = 35 A
CE
GE
C
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Q
rr
RRM
–
–
–
–
–
–
=
15 V, R = 15 W
G
I
E
t
410
532
5.36
30
μJ
ns
μC
A
rr
T
J
= 150 °C
rr
V
CE
V
GE
= 600 V, I = 35 A
C
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy
Temperature under switching conditions
Q
rr
RRM
–
–
–
–
=
15 V, R = 15 W
G
I
E
–
1983
–
μJ
°C
rr
Tvj op
RthJH
−40
150
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness − 3mil,
–
1.4
–
°C/W
l = 2.8 W/mK
www.onsemi.com
3
NXH35C120L2C2ESG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
RECTIFIER DIODE CHARACTERISTICS
Rectifier Reverse Leakage Current
Rectifier Forward Voltage
VR = 1600 V
I = 35 A, T = 25°C
IR
–
–
−
1.1
1
200
1.5
–
mA
V
F
V
F
J
I = 35 A, T = 150°C
–
F
J
Temperature under switching conditions
Tvj op
RthJH
−40
150
°C
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness − 3 mil,
–
1.25
–
°C/W
l = 2.8 W/mK
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
T = 25°C
R
–
–
5
493.3
–
–
–
5
–
–
–
–
kW
W
25
T = 100°C
R
100
nR/R
−5
–
%
Power dissipation
Power dissipation constant
B−value
P
20
mW
mW/K
K
D
–
1.4
B(25/50), tolerance 2%
B(25/100), tolerance 2%
–
3375
3433
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
4
NXH35C120L2C2ESG
TYPICAL CHARACTERISTICS − INVERTER/BRAKE IGBT & DIODE
105
90
75
60
45
30
15
105
25°C
150°C
90
V
= 20 V
V
= 20 V
GE
GE
75
60
45
30
15
V
= 11 V
GE
V
= 11 V
GE
0
0
0
1
2
3
4
0
1
2
3
4
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 2. IGBT Typical Output Characteristic
Figure 3. IGBT Typical Output Characteristic
105
90
75
60
45
30
15
105
90
75
60
45
30
15
150°C
25°C
150°C
25°C
0
0
0
5
10
15
0
1
2
3
4
V , FORWARD VOLTAGE (V)
F
V
, GATE−EMITTER VOLTAGE (V)
GE
Figure 4. IGBT Typical Output Characteristic
Figure 5. Diode Typical Forward Characteristic
V
V
R
= 600 V
= −15 V/15 V
= 15 W
V
V
R
= 600 V
= −15 V/15 V
= 15 W
CE
CE
25°C
150°C
25°C
150°C
GE
GE
G
G
Figure 6. Typical Turn On Loss vs Ic
Figure 7. Typical Turn Off Loss vs Ic
www.onsemi.com
5
NXH35C120L2C2ESG
TYPICAL CHARACTERISTICS − INVERTER/BRAKE IGBT & DIODE
18
V
I
V
= 600 V
= 35 A
= 15 V
CE
GE
V
V
R
= 600 V
= −15 V/15 V
= 15 W
CE
25°C
150°C
C
GE
15
12
G
9
6
3
0
0
50
100
150
200
250
300
350
400
Charge (nC)
Figure 8. Typical Reverse Recovery Energy vs Ic
Figure 9. Gate Voltage vs. Gate Charge
50%
20%
10%
5%
2%
1%
Single pulse
Figure 10. IGBT Junction−to−Heatsink Transient Thermal Impedance
50%
20%
10%
5%
2%
1%
Single pulse
Figure 11. Diode Junction−to−Heatsink Transient Thermal Impedance
www.onsemi.com
6
NXH35C120L2C2ESG
TYPICAL CHARACTERISTICS − RECTIFIER
135
90
45
150°C
25°C
0
0
0.5
1
1.5
2
V , FORWARD VOLTAGE (V)
F
Figure 12. Rectifier Typical Forward Characteristic
50%
20%
10%
5%
2%
1%
Single pulse
Figure 13. Rectifier Junction−to−Heatsink Transient Thermal Impedance
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DIP26 67.8x40
CASE 181AD
ISSUE B
DATE 05 AUG 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXX
ZZZATYWW
XXX = Specific Device Code
ZZZ = Assembly Lot Code
AT = Assembly & Test Location
Y
= Year
WW = Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON09519H
DIP26 67.8x40
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NXH40B120MNQ0SNG
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode
ONSEMI
NXH40B120MNQ1SNG
Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode
ONSEMI
NXH40T120L3Q1PG
Power Integrated Module (PIM), 3-channel T-Type NPC 1200 V, 40 A IGBT, 650 V, 25 A IGBT
ONSEMI
NXH40T120L3Q1PTG
Power Integrated Module (PIM), 3-channel T-Type NPC 1200 V, 40 A IGBT, 650 V, 25 A IGBT
ONSEMI
NXH40T120L3Q1SG
Power Integrated Module (PIM), 3-channel T-Type NPC 1200 V, 40 A IGBT, 650 V, 25 A IGBT
ONSEMI
NXH450B100H4Q2F2PG
Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode
ONSEMI
©2020 ICPDF网 联系我们和版权申明