NXH40B120MNQ0SNG [ONSEMI]
Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode;
| 型号： | NXH40B120MNQ0SNG |
| 厂家： | 
ONSEMI |
| 描述： | Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode |
| 文件： | 总13页 (文件大小：641K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Module – EliteSiC, 40 mohm
SiC M1 MOSFET, 1200 V +
40 A, 1200 V SiC Diode,
Two Channel Full SiC Boost,
Q0 Package
Q0BOOST
CASE 180AJ
SOLDER PINS
NXH40B120MNQ0SNG
Description
MARKING DIAGRAM
The NXH40B120MNQ0SNG is a power module containing a dual
boost stage. The integrated SiC MOSFETs and SiC Diodes provide
lower conduction losses and switching losses, enabling designers to
achieve high efficiency and superior reliability.
NXH40B120MNQ0SNG
ATYYWW
Features
A
T
G
= Assembly Site Code
= Test Site Code
= Pb− Free Package
= Year and Work Week Code
• 1200 V, 40 mꢀ SiC MOSFETs
• Low Reverse Recovery and Fast Switching SiC Diodes
• 1200 V Bypass and Anti−parallel Diodes
• Low Inductive Layout
YYWW
NXH40B120MNQ0SNG = Specific Device Code
• Solder Pins
• Thermistor
PIN CONNECTIONS
• These Device is Pb−Free, Halogen Free and is RoHS Compliant
1
2
3
4
5
6
7
8
Typical Applications
9
10
22
• Solar Inverter
• Uninterruptible Power Supplies
21
11
12
20 19
18 17
16 15
14 13
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. NXH40B120MNQ0SNG Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2023 − Rev. 2
NXH40B120MNQ0/D
NXH40B120MNQ0SNG
ABSOLUTE MAXIMUM RATINGS (Note 1) (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
BOOST MOSFET
Drain−Source Voltage
Gate−Source Voltage
1200
V
V
V
DS
−15/+25
38
V
A
A
GS
Continuous Drain Current (@ V = 20 V, T = 80°C)
I
D
GS
C
Pulsed Drain Current @ T = 80°C (T = 175°C)
114
I
C
J
D(Pulse)
Maximum Power Dissipation @ T = 80°C (T = 175°C)
118
−40
175
W
°C
°C
P
C
J
tot
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature
BOOST DIODE
T
JMAX
Peak Repetitive Reverse Voltage
1200
45
V
A
A
V
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 175°C, tp limited by T
)
135
I
J
Jmax
FRM
Maximum Power Dissipation @ T = 80°C (T = 175°C)
118
−40
175
W
°C
°C
P
C
J
tot
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature
BYPASS DIODE
T
JMAX
Peak Repetitive Reverse Voltage
1200
50
V
A
V
RRM
Continuous Forward Current @ T = 80°C (T = 150°C)
I
F
C
J
Repetitive Peak Forward Current (T = 150°C, t limited by T )
Jmax
150
61
A
I
J
p
FRM
Power Dissipation Per Diode @ T = 80°C (T = 175 °C)
W
°C
°C
P
C
J
tot
Minimum Operating Junction Temperature
−40
150
T
JMIN
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMAX
°C
Storage Temperature Range
−40 to 125
T
stg
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 sec, 60 Hz
3000
12.7
V
is
V
RMS
Creepage Distance
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
−25)
Jmax
Unit
Module Operating Junction Temperature
T
J
−40
(T
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH40B120MNQ0SNG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
BOOST MOSFET CHARACTERISTICS
Zero Gate Voltage Drain Current
V
J
= 0 V, V = 1200 V,
–
–
200
I
ꢁ A
GS
DS
DSS
T = 25°C
Static Drain−to−Source On Resistance
V
J
= 20 V, I = 40 A,
–
–
40
60
55
–
mꢀ
R
GS
D
DS(on)
T = 25°C
V
= 20 V, I = 40 A,
D
GS
T = 175°C
J
Gate−Source Leakage Current
V
GS
V
DS
= −15 V / +25 V,
= 0 V
–
−
1
ꢁ
A
I
GSS
T = 25°C, V = 700 V,
ns
Turn−on Delay Time
Rise Time
–
–
–
–
–
−
–
–
–
–
–
−
–
–
–
–
17
7.5
–
–
–
–
t
t
J
DS
d(on)
I
= 40 A, V = −5 V / 20 V,
GS
D
G
t
r
R
= 4.7 ꢀ
Turn−off Delay Time
Fall Time
43.8
17
d(off)
t
f
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
255
125.5
15.8
7
–
E
E
ꢁ J
ꢁ J
ns
on
off
−
T = 125°C, V = 700 V,
–
–
–
–
t
t
J
D
DS
d(on)
I
= 40 A, V = −5 V / 20 V,
GS
t
r
R
G
= 4.7 ꢀ
Turn−off Delay Time
Fall Time
46.5
13.5
383
108.5
3227
829
19
d(off)
t
f
Turn−on Switching Loss per Pulse
Turn−off Switching Loss per Pulse
Input Capacitance
–
E
E
C
ꢁ J
ꢁ J
on
off
−
V
= 20 V, V = 0 V,
GS
DS
–
–
–
–
pF
pF
ies
oes
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
pF
nC
C
res
V
DS
V
GS
= 600 V, I = 20 A,
146.72
Q
D
g
= 20 V, −15 V
Thermal grease,
Thickness = 2.1 Mil 2%
ꢂ = 2.9 W/mK
Thermal Resistance − Chip−to−Case
–
–
0.81
1.26
–
–
K/W
K/W
R
R
thJC
thJH
Thermal Resistance − Chip−to−Heatsink
BOOST DIODE CHARACTERISTICS
Diode Reverse Leakage Current
Diode Forward Voltage
V
R
= 1200 V
I
R
–
–
–
−
400
1.75
–
ꢁ
A
I = 40 A, T = 25°C
V
1.50
2.17
V
F
J
F
I = 40 A, T = 175°C
F
J
–
T = 25°C
Reverse Recovery Time
–
–
–
–
–
16.7
329.6
34.3
ns
nC
A
t
J
V
V
rr
= 700 V, I = 40 A
DS
GS
= 4.7 ꢀ
D
–
–
–
–
Reverse Recovery Charge
= −5 V / 20 V,
Q
rr
R
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
RRM
di/dt
6684
176.6
A/ꢁ s
ꢁ J
E
rr
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NXH40B120MNQ0SNG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
BOOST DIODE CHARACTERISTICS
–
–
–
–
–
–
–
T = 125°C
Reverse Recovery Time
–
–
–
–
–
–
–
16.9
361
ns
nC
t
J
V
rr
= 700 V, I = 40 A
DS
D
Reverse Recovery Charge
V
= −5 V / 20 V,
Q
GS
R
rr
RRM
= 4.7 ꢀ
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
37
A
I
di/dt
8067
209.1
0.70
1.14
A/ꢁ s
ꢁ J
E
rr
Thermal grease,
Thickness = 2.1 Mil 2%
ꢂ = 2.9 W/mK
Thermal Resistance − Chip−to−Case
K/W
K/W
R
thJC
thJH
Thermal Resistance − Chip−to−Heatsink
BYPASS DIODE CHARACTERISTICS
Diode Reverse Leakage Current
Diode Forward Voltage
R
V
R
= 1200 V, T = 25°C
I
R
–
−
−
−
250
1.3
–
ꢁ
A
J
V
1.11
1.00
V
I = 50 A, T = 25°C
F
F
J
I = 50 A, T = 150°C
F
J
Thermal grease,
Thickness = 2.1 Mil 2%
ꢂ = 2.9 W/mK
–
–
Thermal Resistance − Chip−to−Case
–
–
1.15
1.75
K/W
K/W
R
thJC
thJC
Thermal Resistance − Chip−to−Heatsink
THERMISTOR CHARACTERISTICS
Nominal Resistance
R
−
−
22
1486
−
−
−
5
−
−
−
−
R
kꢀ
25
Nominal Resistance
Deviation of R25
Power Dissipation
Power Dissipation Constant
B−value
T = 100°C
R
ꢀ
100
−5
−
%
mW
mW/K
K
ꢃ
R
/
R
P
200
2
D
−
B (25/50), tolerance 3%
B (25/100), tolerance 3%
−
3950
3998
B−value
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH40B120MNQ0SNG
NXH40B120MNQ0SNG
Q0PACK − Case 180AJ
(Pb−Free and Halide−Free Solder Pins)
24 Units / Blister Tray
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4
NXH40B120MNQ0SNG
TYPICAL CHARACTERISTICS − MOSFET, BOOST DIODE AND BYPASS DIODE
V , Drain to Source Voltage (V)
DS
V , Drain to Source Voltage (V)
DS
Figure 2. MOSFET on Region Characteristics
Figure 3. MOSFET on Region Characteristics
V , Forward Voltage (V)
F
V , Gate−to−source Voltage (V)
GS
Figure 4. MOSFET Transfer Characteristics
Figure 5. Boost Diode Forward Characteristics
I
D
(A)
V , Forward Voltage (V)
F
Figure 6. Bypass Diode Forward Characteristics
Figure 7. Typical Turn On Loss vs. ID
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NXH40B120MNQ0SNG
TYPICAL CHARACTERISTICS − MOSFET, BOOST DIODE AND BYPASS DIODE (continued)
I
D
(A)
R
g
(ꢀ)
Figure 8. Typical Turn Off Loss vs. ID
Figure 9. Typical Turn On Loss vs. RG
R (ꢀ)
g
I , Drain Current (A)
D
Figure 10. Typical Turn Off Loss vs. RG
Figure 11. Typical Turn−On
Switching Time vs. ID
I , Drain Current (A)
D
R , Gate Resistor (ꢀ)
g
Figure 12. Typical Turn−Off Switching
Figure 13. Typical Turn−On Switching
Time vs. ID
Time vs. RG
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6
NXH40B120MNQ0SNG
TYPICAL CHARACTERISTICS − MOSFET, BOOST DIODE AND BYPASS DIODE (continued)
Rg, Gate Resistor (ꢀ)
I , (A)
D
Figure 14. Typical Turn−Off Switching
Figure 15. Typical Reverse Recovery
Energy Loss vs. ID
Time vs. RG
R (ꢀ)
g
I , Drain Current (A)
D
Figure 16. Typical Reverse Recovery
Energy Loss vs. RG
Figure 17. Typical Reverse
Recovery Time vs. ID
I , Drain Current (A)
D
I , Drain Current (A)
D
Figure 18. Typical Reverse Recovery
Charge vs. ID
Figure 19. Typical Reverse Recovery
Peak Current vs. ID
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NXH40B120MNQ0SNG
TYPICAL CHARACTERISTICS − MOSFET, BOOST DIODE AND BYPASS DIODE (continued)
I , Drain Current (A)
D
R , Gate Resistor (ꢀ)
g
Figure 20. Typical di/dt Current Slope vs. ID
Figure 21. Typical Reverse Recovery Time vs. RG
R
g,
Gate Resistor (ꢀ)
R , Gate Resistor (ꢀ)
g
Figure 22. Typical Reverse Recovery
Charge vs. RG
Figure 23. Typical Reverse
Recovery Peak Current vs. RG
R , Gate Resistor (ꢀ)
g
Charge (nC)
Figure 24. Typical di/dt vs. RG
Figure 25. Gate Voltage vs. Gate Charge
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NXH40B120MNQ0SNG
TYPICAL CHARACTERISTICS − MOSFET, BOOST DIODE AND BYPASS DIODE (continued)
Vds (V)
Figure 26. Capacitance Charge
Pulse on Time (s)
Figure 27. Mosfet Transient Thermal Impedance
Pulse on Time (s)
Figure 28. Boost Diode Transient Thermal Impedance
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NXH40B120MNQ0SNG
TYPICAL CHARACTERISTICS − MOSFET, BOOST DIODE AND BYPASS DIODE (continued)
Pulse on Time (s)
Figure 29. Bypass Diode Transient Thermal Impedance
V
DS,
Drain−Source Voltage (V)
V
DS,
Drain−Source Voltage (V)
Figure 30. FBSOA for MOSFET
Figure 31. RBSOA for MOSFET
Temperature (°C)
Figure 32. Thermistor Characteristics
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DATE 08 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63481G
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
PIM22, 55x32.5 / Q0BOOST
CASE 180AJ
ISSUE B
DATE 08 NOV 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63481G
PIM22 55X32.5 / Q0BOOST (SOLDER PIN)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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