NXH40B120MNQ1SNG [ONSEMI]
Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode;
| 型号： | NXH40B120MNQ1SNG |
| 厂家： | 
ONSEMI |
| 描述： | Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode |
| 文件： | 总12页 (文件大小：919K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Module – EliteSiC, 40 mohm
SiC M1 MOSFET, 1200 V +
40 A, 1200 V SiC Diode,
Three Channel Full SiC
Boost, Q1 Package
PIM32, 71x37.4
(SOLDER PIN)
CASE 180BQ
Product Preview
MARKING DIAGRAM
NXH40B120MNQ1SNG
NXH40B120MNQ1SNG
ATYYWW
The NXH40B120MNQ1SNG is a power module containing a three
channel boost stage. The integrated SiC MOSFETs and SiC Diodes
provide lower conduction losses and switching losses, enabling
designers to achieve high efficiency and superior reliability.
NXH40B120MNQ1SNG
= Device Code
G
AT
YYWW
= Pb−Free Package
= Assembly & Test Site Code
= Year and Work Week Code
Features
• 1200 V 40 mW SiC MOSFETs
• Low Reverse Recovery and Fast Switching SiC Diodes
• 1200 V Bypass and Anti−parallel Diodes
• Low Inductive Layout
PIN CONNECTIONS
• Solderable Pins
• Thermistor
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Figure 1. NXH80B120MNQ0SNG Schematic Diagram
This document contains information on a product under development. onsemi reserves
the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
NXH40B120MNQ1SNG/D
February, 2023 − Rev. P2
NXH40B120MNQ1SNG
ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C unless otherwise noted
J
Rating
BOOST SiC MOSFET (M11, M21, M31)
Drain−Source Voltage
Symbol
Value
Unit
V
V
1200
−15/+25
44
V
V
DS
Gate−Source Voltage
GS
Continuous Drain Current (@ V = 20 V, T = 80°C)
I
D
A
GS
C
Pulsed Drain Current @ T = 80°C (T = 175_C)
I
D(Pulse)
132
A
C
J
Maximum Power Dissipation @ T = 80°C
P
tot
156
W
°C
°C
C
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
BOOST DIODE (D11, D21, D31)
T
JMIN
−40
T
JMAX
175
Peak Repetitive Reverse Voltage
V
1200
53
V
A
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Surge Forward Current (60 Hz single half−sine wave)
I
159
153
−40
175
A
FRM
Maximum Power Dissipation @ T = 80°C (T = 175_C)
P
tot
W
°C
°C
C
J
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature
BYPASS DIODE (D12, D22, D32)
Peak Repetitive Reverse Voltage
T
JMAX
V
1200
75
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 150°C)
I
F
C
J
Repetitive Peak Forward Current (T = 150°C, t limited by T
)
I
FRM
225
97
A
J
p
Jmax
Power Dissipation Per Diode @ T = 80°C (T = 150°C)
P
tot
W
°C
°C
C
J
Minimum Operating Junction Temperature
T
JMIN
−40
150
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMAX
Storage Temperature range
T
stg
−40 to 125
°C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz
Creepage distance
V
is
3000
12.7
V
RMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES
Parameter
Symbol
Min
Max
Unit
Module Operating Junction Temperature
T
J
−40
150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH40B120MNQ1SNG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
BOOST MOSFET CHARACTERISTICS (M11, M21, M31)
Zero Gate Voltage Drain Current
V
GS
V
GS
V
GS
V
GS
= 0 V, V = 1200 V, T = 25°C
–
−
–
–
–
40
60
–
200
55
−
I
mA
DS
J
DSS
Static Drain−to−Source On
Resistance
= 20 V, I = 40 A, T = 25°C
D J
R
DS(on)
mW
= 20 V, I = 40 A, T = 175°C
D
J
Gate−Source Leakage Current
= 25 V, V = 0 V
1.0
I
mA
DS
GSS
T = 25°C
Turn−on Delay Time
Rise Time
–
–
–
–
–
17
7.5
43.8
17
–
–
–
–
–
ns
t
J
d(on)
V
DS
= 700 V, V = −5 V to 20 V
GS
t
r
I
D
= 40 A, R = 4.7 W
G
Turn−off Delay Time
Fall Time
t
d(off)
t
f
Turn−on Switching Loss per Pulse
255
mJ
E
on
off
Turn−off Switching Loss per Pulse
–
125.5
–
E
T = 125°C
Turn−on Delay Time
Rise Time
–
–
–
–
–
15.8
7
–
–
–
–
–
ns
t
t
J
d(on)
V
D
= 700 V, V = −5 V to 20 V
DS
GS
t
r
I
= 40 A, R = 4.7 W
G
Turn−off Delay Time
Fall Time
46.5
15.3
216
d(off)
t
f
Turn−on Switching Loss per Pulse
mJ
E
on
off
Turn−off Switching Loss per Pulse
Input Capacitance
–
–
–
108.5
3227
829
–
–
–
E
V
DS
= 800 V, V = 0 V, f = 1 MHz
pF
C
GS
ies
Output Capacitance
C
oes
Reverse Transfer Capacitance
Total Gate Charge
–
–
19
–
–
C
res
V
DS
V
GS
= 600 V, I = 20 A,
Q
g
112
nC
D
= 20 V
Thermal grease,
Thermal Resistance − chip−to−
–
–
0.88
0.61
–
–
K/W
K/W
R
R
thJH
thJC
Thickness = 2 Mil 2%
heatsink
l = 2.87 W/mK
Thermal Resistance − chip−to−case
BOOST DIODE CHARACTERISTICS (D11, D21, D31)
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1200 V
I
–
–
400
mA
R
R
I = 40 A, T = 25°C
F
V
1.2
–
1.57
–
1.9
–
V
J
F
I = 40 A, T = 175°C
F
J
T = 25°C
Reverse Recovery Time
–
16.7
–
ns
nC
A
t
J
rr
V
DS
= 700 V, V = −5 V to 20 V
GS
Reverse Recovery Charge
Peak Reverse Recovery Current
–
–
–
329.6
34.3
–
–
–
Q
rr
RRM
I
D
= 40 A, R = 4.7 W
G
I
Peak Rate of Fall of Recovery
Current
di/dt
6684
A/ms
Reverse Recovery Energy
Reverse Recovery Time
–
–
–
–
–
176.6
16.9
361
–
–
–
–
–
E
t
mJ
ns
rr
T = 125°C
J
rr
V
DS
= 700 V, V = −5 V to 20 V
GS
Reverse Recovery Charge
Peak Reverse Recovery Current
nC
A
Q
rr
RRM
I
D
= 40 A, R = 4.7 W
G
37
I
Peak Rate of Fall of Recovery
Current
di/dt
8067
A/ms
Reverse Recovery Energy
–
209.1
–
E
mJ
rr
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3
NXH40B120MNQ1SNG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
BOOST DIODE CHARACTERISTICS (D11, D21, D31)
Thermal grease,
Thermal Resistance −
chip−to−heatsink
–
–
0.87
0.62
–
–
K/W
K/W
R
q
q
JH
JC
Thickness = 2 Mil 2%
l = 2.87 W/mK
Thermal Resistance − chip−to−case
R
BYPASS DIODE CHARACTERISTICS (D12, D22, D32)
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1200 V, T = 25°C
I
R
–
0.8
–
–
1.13
–
250
1.3
–
mA
R
J
I = 50 A, T = 25°C
F
V
F
V
J
I = 50 A, T = 150°C
F
J
Thermal grease,
Thermal Resistance −
chip−to−heatsink
–
1.05
–
°C/W
°C/W
R
q
q
JH
JC
Thickness = 2 Mil 2%
l = 2.87 W/mK
T = 100°C
Thermal Resistance − chip−to−case
THERMISTOR CHARACTERISTICS
Nominal resistance
–
0.72
–
R
R
–
22
–
kW
25
Nominal resistance
Deviation of R25
Power dissipation
Power dissipation constant
B−value
–
−5
–
1468
–
–
5
–
–
–
–
R
W
%
100
DR/R
P
200
2
mW
mW/K
K
D
–
B(25/50), tolerance 3%
B(25/100), tolerance 3%
–
3950
3998
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Marking
Package
Shipping
Q1 3−Channel BOOST − Case 180BQ
Solder Pins
21 Units / Blister Tray
NXH40B120MNQ1SNG
NXH40B120MNQ1SNG
(Pb*Free)
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4
NXH40B120MNQ1SNG
TYPICAL CHARACTERISTICS – MOSFET, BOOST DIODE AND BYPASS DIODE
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
Figure 4. Typical Transfer Characteristics
Figure 5. Boost Diode Forward Characteristics
Figure 6. BYPASS Diode Forward Characteristics
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5
NXH40B120MNQ1SNG
TYPICAL CHARACTERISTICS –MOSFET, BOOST DIODE AND BYPASS DIODE
Figure 7. Transient Thermal Impedance (MOSFET)
Figure 8. Transient Thermal Impedance (BOOST DIODE)
Figure 9. Transient Thermal Impedance (BYPASS DIODE)
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6
NXH40B120MNQ1SNG
TYPICAL CHARACTERISTICS – MOSFET, BOOST DIODE AND BYPASS DIODE
Figure 10. FBSOA
Figure 11. RBSOA
Figure 12. Gate Voltage vs. Gate Charge
Figure 13. Capacitance Charge
Figure 14. Thermistor Characteristics
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7
NXH40B120MNQ1SNG
TYPICAL CHARACTERISTICS – MOSFET (M11, M21, M31) AND BOOST DIODE (D11, D21, D31)
Figure 15. Typical Turn ON Loss vs. ID
Figure 16. Typical Turn OFF Loss vs. ID
Figure 17. Typical Turn ON Loss vs. RG
Figure 18. Typical Turn OFF Loss vs. RG
Figure 19. Typical Reverse Recovery Energy Loss
vs. ID
Figure 20. Typical Reverse Recovery Energy Loss
vs. RG
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8
NXH40B120MNQ1SNG
TYPICAL CHARACTERISTICS – MOSFET (M11, M21 ,M31) AND BOOST DIODE (D11, D21, D31) (continued)
Figure 21. Typical Turn−Off Switching Time vs. ID
Figure 22. Typical Turn−On Switching Time
vs. ID
Figure 23. Typical Turn−Off Switching Time
Figure 24. Typical Turn−On Switching Time
vs. RG
vs. RG
Figure 26. Typical Reverse Recovery Charge
vs. ID
Figure 25. Inverse Diode
Typical Reverse Recovery Time vs. ID
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9
NXH40B120MNQ1SNG
TYPICAL CHARACTERISTICS – MOSFET (M11, M21, M31) AND BOOST DIODE (D11, D21, D31) (continued)
Figure 27. Inverse Diode
Typical Reverse Recovery Current vs. ID
Figure 28. Typical di/dt Current Slope
versus ID
Figure 29. Typical Reverse Recovery Time vs. RG
Figure 30. Inverse Diode
Typical Reverse Recovery Charge vs. RG
Figure 31. Typical Reverse Recovery Peak Current
versus RG
Figure 32. Inverse Diode Typical di/dt vs. RG
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM32, 71x37.4 (SOLDER PIN)
CASE 180BQ
ISSUE A
DATE 23 JUL 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
XXXXX = Specific Device Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON15094H
PIM32, 71x37.4 (SOLDER PIN)
PAGE 1 OF 1
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