NXH40T120L3Q1PTG [ONSEMI]
Power Integrated Module (PIM), 3-channel T-Type NPC 1200 V, 40 A IGBT, 650 V, 25 A IGBT;
| 型号： | NXH40T120L3Q1PTG |
| 厂家： | 
ONSEMI |
| 描述： | Power Integrated Module (PIM), 3-channel T-Type NPC 1200 V, 40 A IGBT, 650 V, 25 A IGBT PC 双极性晶体管 |
| 文件： | 总20页 (文件大小：2418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Q1 3-Phase TNPC Module
NXH40T120L3Q1
The NXH40T120L2Q1 is a power module containing a three
channel T−type neutral−point clamped (TNPC) circuit. Each channel
has two 1200 V, 40 A IGBTs with inverse diodes and two 650 V, 25 A
IGBTs with inverse diodes. The module contains an NTC thermistor.
Q1 3−TNPC
CASE 180AS
Solder pins follow similar pattern
Features
• Low Package Height
• Compact 82.5 mm x 37.4 mm x 12 mm Package
• Options with Press−fit Pins and Solder Pins
MARKING DIAGRAM
• Options with Pre−applied Thermal Interface Material (TIM) and
without Pre−applied TIM
NXH40T120L3Q1xG
ATYYWW
• Thermistor
• This Device is Pb−Free and is RoHS Compliant
NXH40T120L3Q1x = Device Code
Applications
A
T
= Assembly Site Code
= Test Site Code
• Solar Inverters
• UPS
• Energy Storage Systems
YYWW
G
= Year and Work Week Code
= Pb−Free Package
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Figure 1. NXH40T120L3Q1 Schematic Diagram
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
September, 2021 − Rev. 2
NXH40T120L3Q1/D
NXH40T120L3Q1
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
IGBT (Q1, Q4, Q5, Q8, Q9, Q12)
Collector*Emitter Voltage
Gate*Emitter Voltage
1200
20
V
V
VCES
VGE
Continuous Collector Current @ TC = 80°C (TJ = 175°C)
IC
40
A
Pulsed Collector Current (TJ = 175°C)
120
145
−40
175
A
ICpulse
Ptot
Maximum Power Dissipation (TJ = 175_C)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
DIODE (D1, D4, D5, D8, D9, D12)
W
°C
°C
TJMIN
TJMAX
Peak Repetitive Reverse Voltage
1200
25
V
A
VRRM
IF
Continuous Forward Current @ TC = 80°C (TJ = 175°C)
Repetitive Peak Forward Current (TJ = 175°C)
Maximum Power Dissipation (TJ = 175°C)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
75
A
IFRM
Ptot
55
W
°C
°C
*40
175
TJMIN
TJMAX
IGBT+DIODE (Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11)
Collector*Emitter Voltage
Gate*Emitter Voltage
650
20
V
V
VCES
VGE
Continuous Collector Current @ TC = 80°C (TJ = 175°C)
Pulsed Collector Current (TJ = 175°C)
Maximum Power Dissipation (TJ = 175°C)
Minimum Operating Junction Temperature
Maximum Operating Junction Temperature
THERMAL PROPERTIES
IC
42
A
126
146
−40
175
A
ICpulse
Ptot
W
°C
°C
TJMIN
TJMAX
°C
Storage Temperature range
*40 to 150
Tstg
Vis
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 sec, 60 Hz
Creepage Distance
3000
12.7
VRMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING CONDITIONS
Rating
Symbol
Min
Max
Unit
Module Operating Junction Temperature
T
J
−40
150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH40T120L3Q1
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted)
J
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
IGBT CHARACTERISTICS (Q1, Q4, Q5, Q8, Q9, Q12)
mA
Collector−Emitter Cutoff Current
VGE = 0 V, VCE = 1200 V
VGE = 15 V, IC = 40 A, TJ = 25°C
VGE = 15 V, IC = 40 A , TJ = 150°C
VGE = VCE, IC = 1.5 mA
–
–
–
–
400
2.20
–
ICES
Collector−Emitter Saturation Voltage
V
VCE(sat)
1.85
2.25
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
Rise Time
4.50
–
−
–
6.50
800
–
V
VGE(TH)
IGES
VGE = 20 V, VCE = 0 V
nA
ns
–
63
22
199
23
560
td(on)
tr
–
–
Turn−off Delay Time
Fall Time
TJ = 25°C
–
–
td(off)
tf
VCE = 350 V, IC = 28 A,
–
–
VGE
= 15 V, RG = 8 W
mJ
Turn−on Switching Loss per Pulse
–
–
Eon
Turn off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
–
–
–
–
–
–
338
59
–
–
–
–
–
–
Eoff
ns
td(on)
tr
24
Turn−off Delay Time
Fall Time
225
80
td(off)
tf
TJ = 125°C
CE = 350 V, IC = 28 A,
VGE 15 V, RG = 8 W
V
=
mJ
Turn*on Switching Loss per Pulse
Eon
757
Turn off Switching Loss per Pulse
–
–
Eoff
910
7753
227
pF
Input Capacitance
–
–
–
–
–
–
–
–
–
–
Cies
Coes
Cres
Qg
Output Capacitance
VCE = 20 V VGE = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Charge
127
VCE = 350 V, IC = 40 A, VGE
=
15 V
536
nC
°C/W
Thermal Resistance * chip−to−heatsink
1.01
Thermal grease, Thickness ≤ 2.25 Mil,
λ = 2.9 W/mK
RthJH
DIODE CHARACTERISTICS (D1, D4, D5, D8, D9, D12)
Diode Forward Voltage
VF
V
–
–
–
–
–
–
–
–
–
–
–
–
–
2.4
1.7
2.7
–
IF = 20 A, TJ = 25°C
IF = 20 A, TJ = 150°C
Reverse Recovery Time
43
–
ns
mC
A
trr
Qrr
Reverse Recovery Charge
756
35
–
TJ = 25°C
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
VCE = 350 V, IC = 28 A,
IRRM
di/dt
Err
VGE
= 15 V, RG = 16 W
A/ms
mJ
750
104
129
2702
45
–
–
Reverse Recovery Time
–
ns
trr
mC
A
Reverse Recovery Charge
–
Qrr
TJ = 125°C
CE = 350 V, IC = 28 A,
VGE 15 V, RG = 16 W
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
V
IRRM
di/dt
Err
=
A/ms
mJ
407
428
1.63
–
–
°C/W
Thermal Resistance * chip−to−heatsink
Thermal grease, Thickness ≤ 2.25 Mil,
λ = 2.9 W/mK
–
RthJH
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3
NXH40T120L3Q1
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted) (continued)
J
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
IGBT CHARACTERISTICS (Q2, Q3, Q6, Q7, Q10, Q11)
mA
Collector−Emitter Cutoff Current
VGE = 0 V, VCE = 650 V
–
–
–
–
250
−
ICES
Collector−Emitter Saturation Voltage
V
VCE(sat)
1.50
1.53
VGE = 15 V, IC = 50 A, TJ = 25°C
VGE = 15 V, IC = 50 A , TJ = 150°C
VGE = VCE, IC = 1.65 mA
–
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
Rise Time
2.60
–
4.40
–
6.40
400
–
V
VGE(TH)
IGES
VGE = 20 V, VCE = 0 V
nA
ns
–
54
td(on)
tr
–
15
–
Turn−off Delay Time
Fall Time
TJ = 25°C
–
157
12
–
td(off)
tf
V
CE = 350 V, IC = 28 A,
–
–
VGE
= 15 V, RG = 16 W
mJ
Turn−on Switching Loss per Pulse
–
416
–
Eon
Turn off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
–
–
–
–
–
–
321
52
–
–
–
–
–
–
Eoff
ns
td(on)
tr
16
Turn−off Delay Time
Fall Time
178
18
td(off)
tf
TJ = 125°C
CE = 350 V, IC = 28 A,
VGE 15 V, RG = 16 W
V
=
mJ
Turn*on Switching Loss per Pulse
Eon
671
Turn off Switching Loss per Pulse
–
–
Eoff
Cies
Coes
Cres
Qg
444
3137
146
pF
Input Capacitance
–
–
–
–
–
–
–
–
–
–
Output Capacitance
VCE = 20 V VGE = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Charge
17
VCE = 350 V, IC = 40 A, VGE
=
15 V
180
nC
°C/W
Thermal Resistance * chip−to−heatsink
0.995
Thermal grease, Thickness ≤ 2.25 Mil,
λ = 2.9 W/mK
RthJH
DIODE CHARACTERISTICS (D2, D3, D6, D7, D10, D11)
Diode Forward Voltage
VF
V
–
–
–
–
–
–
–
–
–
–
–
–
–
1.28
1.18
3.05
69
−
–
IF = 20 A, TJ = 25°C
IF = 20 A, TJ = 150°C
IF = 20 A, TJ = 25°C
Combined IGBT + Diode Voltage Drop
Reverse Recovery Time
VF
trr
3.4
–
V
ns
mC
A
Reverse Recovery Charge
1267
41
–
Qrr
TJ = 25°C
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
V
CE = 350 V, IC = 28 A,
IRRM
di/dt
Err
VGE
= 15 V, RG = 8 W
A/ms
mJ
1599
244
111
–
–
Reverse Recovery Time
–
ns
trr
mC
A
Reverse Recovery Charge
2323
40
–
Qrr
TJ = 125°C
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
V
CE = 350 V, IC = 28 A,
IRRM
di/dt
Err
VGE
=
15 V, RG = 8 W
A/ms
mJ
470
510
–
–
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4
NXH40T120L3Q1
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted) (continued)
J
Parameter
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
T = 25°C
22
R25
R100
ꢀR/R
PD
kW
T = 100°C
1468
W
%
*5
5
Power dissipation
200
2
mW
mW/K
K
Power dissipation constant
B−value
B(25/50), tolerance 3%
B(25/100), tolerance 3%
3950
3998
B−value
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Package
Orderable Part Number
Marking
Shipping
NXH40T120L3Q1PG
NXH40T120L3Q1PG
Q1 3−Phase TNPC * Case 180AS
Press−fit Pins (Pb−Free)
21 Units / Blister Tray
NXH40T120L3Q1SG
NXH40T120L3Q1PTG
NXH40T120L3Q1SG
NXH40T120L3Q1PTG
Q1 3−Phase TNPC * Case 180BN
Solder Pins (Pb−Free)
21 Units / Blister Tray
21 Units / Blister Tray
Q1 3−Phase TNPC * Case 180AS
Press−fit Pins (Pb−Free)
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5
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT (Q1, Q4, Q5, Q8, Q9, Q12)
AND DIODE (D1, D4, D5, D8, D9, D12)
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
Figure 4. Typical Transfer Characteristics
Figure 5. Diode Forward Characteristics
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6
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT (Q1, Q4, Q5, Q8, Q9, Q12)
AND DIODE (D1, D4, D5, D8, D9, D12)
Figure 6. Transient Thermal Impedance (Half Bridge IGBT)
Figure 7. Transient Thermal Impedance (Half Bridge Diode)
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7
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT (Q1, Q4, Q5, Q8, Q9, Q12)
AND DIODE (D1, D4, D5, D8, D9, D12)
Figure 8. FBSOA
Figure 9. RBSOA
Figure 10. Gate Voltage vs. Gate Charge
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8
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − NP IGBT + DIODE
(Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11)
Figure 11. Typical Output Characteristics
(IC versus VDT
Figure 12. Typical Output Characteristics
(IC versus VDT
)
)
Figure 13. Typical Transfer Characteristics
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NXH40T120L3Q1
TYPICAL CHARACTERISTICS − NP IGBT + DIODE
(Q2+D2, Q3+D3, Q6+D6, Q7+D7, Q10+D10, Q11+D11)
Figure 14. Transient Thermal Impedance (Neutral Point IGBT + Diode)
Figure 15. FBSOA (NP IGBT + Diode)
Figure 16. RBSOA (NP IGBT + Diode)
Figure 17. Gate Voltage vs. Gate Charge
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10
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE
Figure 18. Typical Switching Loss EON vs. IC
Figure 20. Typical Switching Loss EON vs. RG
Figure 22. Typical Switching Time TDOFF vs. IC
Figure 19. Typical Switching Loss EOFF vs. IC
Figure 21. Typical Switching Loss EOFF vs. RG
Figure 23. Typical Switching Time TDON vs. IC
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11
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE
Figure 24. Typical Switching Time TDOFF vs. RG
Figure 25. Typical Switching Time TDON vs. RG
Figure 26. Typical Reverse Recovery Energy
Loss vs. IC
Figure 27. Typical Reverse Recovery Energy
Loss vs. RG
Figure 28. Typical Reverse Recovery Time vs.
RG
Figure 29. Typical Reverse Recovery Charge
vs. RG
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12
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT COMMUTATES NEUTRAL POINT DIODE
Figure 30. Typical Reverse Recovery Peak
Current vs. RG
Figure 31. Typical di/dt vs. RG
Figure 32. Typical Reverse Recovery Time vs.
IC
Figure 33. Typical Reverse Recovery Charge
vs. IC
Figure 34. Typical Reverse Recovery Current
vs. IC
Figure 35. Typical di/dt Current Slope vs. IC
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13
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE
Figure 36. Typical Turn ON Loss vs. IC
Figure 37. Typical Turn OFF Loss vs. IC
Figure 38. Typical Turn ON Loss vs. RG
Figure 39. Typical Turn OFF Loss vs. RG
Figure 40. Typical Turn−Off Switching Time vs.
Figure 41. Typical Turn−On Switching Time vs.
IC
IC
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14
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE
Figure 42. Typical Turn−Off Switching Time vs.
Figure 43. Typical Turn−On Switching Time vs.
RG
RG
Figure 44. Typical Reverse Recovery Energy
Loss vs. IC
Figure 45. Typical Reverse Recovery Energy
Loss vs. RG
Figure 46. Typical Reverse Recovery Time vs.
RG
Figure 47. Typical Reverse Recovery Charge
vs. RG
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15
NXH40T120L3Q1
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT COMMUTATES HALF BRIDGE DIODE
Figure 48. Typical Reverse Recovery Peak
Current vs. RG
Figure 49. Typical di/dt vs. RG
Figure 50. Typical Reverse Recovery Time vs.
IC
Figure 51. Typical Reverse Recovery Charge
vs. IC
Figure 52. Typical Reverse Recovery Current
vs. IC
Figure 53. Typical di/dt Current Slope vs. IC
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM44, 71x37.4
CASE 180AS
ISSUE O
DATE 25 JUN 2018
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON92314G
PIM44, 71x37.4
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
PIM44, 71x37.4
CASE 180AS
ISSUE O
DATE 15 JUN 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON92314G
PIM44, 71x37.4
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
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2
© Semiconductor Components Industries, LLC, 2018
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM44, 71x37.4 (SOLDER PINS)
CASE 180BN
ISSUE O
DATE 08 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12615H
PIM44, 71x37.4 (SOLDER PINS)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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