NXH450B100H4Q2F2SG [ONSEMI]
Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode;
| 型号： | NXH450B100H4Q2F2SG |
| 厂家： | 
ONSEMI |
| 描述： | Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode 双极性晶体管 |
| 文件： | 总14页 (文件大小：1281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Si/SiC Hybrid Module –
EliteSiC, 3 Channel
Symmetric Boost 1000 V,
150 A IGBT, 1200 V, 30 A SiC
Diode, Q2 Package
NXH450B100H4Q2F2,
NXH450B100H4Q2F2PG-R
Q2BOOST 3−CHANNEL PRESS FIT PINS
CASE 180BG
Description
The NXH450B100H4Q2 is a Si/SiC Hybrid three channel
symmetric boost module. Each channel contains two 1000 V, 150 A
IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass
diodes. The module contains an NTC thermistor.
Features
• Silicon/SiC Hybrid Technology Maximizes Power Density
• Low Switching Loss Reduces System Power Dissipation
• Low Inductive Layout
• Press−fit and Solder Pin Options
Q2BOOST 3−CHANNEL SOLDER PINS
CASE 180BR
• This Device is Pb−Free, Halogen Free and is RoHS Compliant
Typical Applications
• Solar Inverter
• Uninterruptible Power Supplies
MARKING DIAGRAM
NXH450B100H4Q2F2PG/PG−R/SG
ATYYWW
G
= Pb− Free Package
AT
= Assembly & Test Site Code
YYWW
NXH450B100H4Q2F2PG/PG−R/SG
= Specific Device Code
= Year and Work Week Code
PIN CONNECTIONS
See details pin connections on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Figure 1. NXH450B100H4Q2F2PG/PG−R/SG Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
NXH450B100H4Q2F2/D
March, 2023 − Rev. 2
NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
Figure 2. Pins Assignments
ABSOLUTE MAXIMUM RATINGS (Note 1) (T = 25°C unless otherwise noted)
j
Rating
Symbol
Value
Unit
IGBT (Tx1, Tx2)
Collector−Emitter Voltage
1000
V
V
V
CES
Gate−Emitter Voltage
20
30
V
GE
Positive Transient Gate−Emitter Voltage (Tpulse = 5 μs, D < 0.10)
Continuous Collector Current (@ V = 20 V, T = 80°C)
I
C
101
303
234
−40
150
A
A
GE
c
Pulsed Peak Collector Current @ Tc = 80°C (T = 150°C)
I
J
C(Pulse)
Power Dissipation (T = 80°C, T = 150°C)
W
°C
°C
P
C
J
tot
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature (Note 2)
IGBT INVERSE DIODE (DX1, DX2) AND BYPASS DIODE (DX5, DX6)
Peak Repetitive Reverse Voltage
T
JMAX
1600
36
V
A
A
V
I
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 150°C, T limited by T )
Jmax
108
J
J
FRM
Maximum Power Dissipation @ T = 80°C (T = 150°C)
79
W
°C
°C
P
C
J
tot
Minimum Operating Junction Temperature
−40
150
T
JMIN
Maximum Operating Junction Temperature
T
JMAX
SILICON CARBIDE SCHOTTKY DIODE (DX3, DX4)
Peak Repetitive Reverse Voltage
1200
36
V
A
V
RRM
Continuous Forward Current @ T = 80°C
I
F
C
Repetitive Peak Forward Current (T = 150°C, T limited by T )
Jmax
108
104
−40
175
A
I
J
J
FRM
Maximum Power Dissipation @ T = 80°C (T = 150 °C)
W
°C
°C
P
C
J
tot
Minimum Operating Junction Temperature
T
JMIN
Maximum Operating Junction Temperature
T
JMAX
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2. Qualification at 175°C per discrete TO247.
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2
NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
THERMAL AND INSULATION PROPERTIES (Note 3) (T = 25°C unless otherwise noted)
j
Rating
Symbol
Value
Unit
THERMAL PROPERTIES
Operating Temperature under Switching Condition
Storage Temperature Range
−40 to (Tjmax – 25)
−40 to 125
°C
°C
T
VJOP
T
stg
THERMAL PROPERTIES
Isolation Test Voltage, t = 2 sec, 50 Hz (Note 4)
4000
12.7
V
is
V
RMS
Creepage Distance
Mm
Comparative Tracking Index
>600
CTI
3. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
4. 4000 VAC
for 1 second duration is equivalent to 3333 VAC
for 1 minute duration.
RMS
RMS
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3
NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
ELECTRICAL CHARACTERISTICS (Note 5) (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
IGBT (TX1, TX2)
Collector−Emitter Breakdown Voltage
Collector−Emitter Saturation Voltage
V
= 0 V, I =2 mA
V
(BR)CES
1000
–
–
–
V
V
GE
C
V
= 15 V, I = 150 A,
V
CESAT
1.70
2.25
GE
C
T
= 25°C
C
V
C
= 15 V, I = 150 A,
–
2.03
4.66
–
GE
C
T
= 150°C
Gate−Emitter Threshold Voltage
V
GE
= V , I = 150 mA
V
4.1
5.7
V
CE
C
GE(TH)
Collector−Emitter Cutoff Current
Gate Leakage Current
V
V
= 0 V, V = 1000 V
I
–
–
–
−
–
600
800
–
ꢀ A
nA
ns
GE
CE
CES
=
20 V, V = 0 V
I
GE
CE
GES
T = 25°C
Turn−On Delay Time
j
28
t
d(on)
V
V
= 600 V, I = 50 A
CE
GE
C
= −8 V, +15 V, R = 4 ꢁ
G
Rise Time
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
10
157
22
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
t
r
Turn−Off Delay Time
Fall time
t
d(off)
t
f
Turn on Switching Loss
Turn off Switching Loss
Turn−On Delay Time
Rise Time
403
1651
27
ꢀ
J
E
on
off
E
T = 125°C
ns
j
t
t
d(on)
V
CE
V
GE
= 600 V, I = 50 A
C
= −8 V, +15 V, R = 4 ꢁ
G
12
t
r
Turn−Off Delay Time
Fall time
192
32
d(off)
t
f
Turn on Switching Loss
Turn off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
594
2138
9342
328
52
ꢀ
J
E
E
on
off
V
CE
= 20 V, V = 0 V,
pF
GE
C
ies
oes
f = 1 MHz
C
C
res
V
C
= 600 V, V = 15 V,
252
nC
CE
GE
Q
g
I
= 75 A
Thermal grease,
Thickness = 2.1 Mil 2%
ꢂ = 2.9 W/mK
R
R
–
–
0.45
0.30
–
–
K/W
K/W
Thermal Resistance − Chip−to−Heatsink
Thermal Resistance − Chip−to−Case
thJH
thJC
IGBT INVERSE DIODE (DX1, DX2) AND BYPASS DIODE (DX5, DX6)
Diode Forward Voltage
V
F
–
–
1.04
0.94
1.7
–
V
I = 30 A, T = 25°C
F
J
I = 30 A, T = 150°C
F
J
Thermal grease,
Thickness = 2.1 Mil 2%
ꢂ = 2.9 W/mK
Thermal Resistance − Chip−to−Heatsink
Thermal Resistance − Chip−to−Case
R
–
–
1.09
0.89
–
–
K/W
K/W
thJH
thJC
R
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NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
ELECTRICAL CHARACTERISTICS (Note 5) (T = 25°C unless otherwise noted) (continued)
J
Parameter
SIC DIODE (DX3, DX4)
Test Conditions
Symbol
Min
Typ
Max
Unit
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1200 V, T = 25°C
I
–
−
−
−
600
1.7
−
ꢀ
A
R
J
R
I = 30 A, T = 25°C
F
V
1.42
1.85
V
J
F
I = 30 A, T = 150°C
F
J
Reverse Recovery Time
T = 25°C
–
–
–
–
–
–
–
–
–
–
–
–
20
88
–
–
–
–
–
–
–
–
–
–
–
–
ns
nC
A
t
J
rr
V
DS
V
GE
= 600 V, I = 50 A
C
= −8 V, 15 V, R = 4 ꢁ
Reverse Recovery Charge
Q
rr
RRM
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
10
I
di/dt
4200
38
A/ꢀ s
ꢀ J
E
t
rr
Reverse Recovery Time
T = 125°C
19
ns
J
rr
V
DS
V
GE
= 600 V, I = 50 A
C
= −8 V, 15 V, R = 4 ꢁ
Reverse Recovery Charge
87
nC
A
Q
rr
RRM
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
9
I
di/dt
3154
35
A/ꢀ s
ꢀ J
E
rr
Thermal grease,
Thickness = 2.1 Mil 2%
ꢂ = 2.9 W/mK
Thermal Resistance − Chip−to−Heatsink
R
0.97
0.67
K/W
K/W
thJH
Thermal Resistance − Chip−to−Case
THERMISTOR CHARACTERISTICS
Nominal Resistance
Rt
hJC
−
−
22
1486
−
−
−
5
−
−
−
−
R
kꢁ
ꢁ
25
Nominal Resistance
Deviation of R25
Power Dissipation
Power Dissipation Constant
B−Value
T = 100°C
R
100
−5
−
%
ꢃ
R
/
R
P
200
2
mW
mW/K
K
D
−
B (25/50), tolerance 3%
B (25/100), tolerance 3%
−
3950
3998
B−Value
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
PACKAGE MARKING AND ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH450B100H4Q2F2PG,
NXH450B100H4Q2F2PG−R
PRESS FIT PINS
NXH450B100H4Q2F2PG,
NXH450B100H4Q2F2PG−R
Q2BOOST − Case 180BG
(Pb−Free and Halide−Free Press Fit Pins)
12 Units / Blister Tray
NXH450B100H4Q2F2SG
SOLDER PINS
NXH450B100H4Q2F2SG
Q2BOOST − Case 180BR
(Pb−Free and Halide−Free Solder Pins)
12 Units / Blister Tray
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5
NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE
V , Collector − Emitter Voltage (V)
CE
V , Collector − Emitter Voltage (V)
CE
Figure 3. Typical Output Characteristics
Figure 4. Typical Output Characteristics
V , Gate−Emitter Voltage (V)
GE
V , Collector−Emitter Voltage (V)
CE
Figure 5. Transfer Characteristics
Figure 6. Typical Saturation Voltage
Characteristics
V , Forward Voltage (V)
F
V , Forward Voltage (V)
F
Figure 7. Inverse Diode Forward
Characteristics
Figure 8. Boost Diode Forward
Characteristics
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NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED)
I
C
(A)
R (ꢁ)
g
Figure 9. Typical Turn On Loss vs. IC
Figure 10. Typical Turn Off Loss vs. IC
R (ꢁ)
g
R (ꢁ)
g
Figure 11. Typical Turn On Loss vs. RG
Figure 12. Typical Turn Off Loss vs. RG
I
C
(A)
R (ꢁ)
g
Figure 13. Typical Reverse Recovery
Energy Loss vs. IC
Figure 14. Typical Reverse Recovery
Energy Loss vs. RG
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NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED)
I , Collector Current (A)
C
I , Collector Current (A)
C
Figure 15. Typical Turn−On
Figure 16. Typical Turn−Off
Switching Time vs. IC
Switching Time vs. IC
R , Gate Resistor (ꢁ)
g
R , Gate Resistor (ꢁ)
g
Figure 18. Typical Turn−Off
Switching Time vs. RG
Figure 17. Typical Turn−On
Switching Time vs. RG
I , Collector Current (A)
C
R , Gate Resistor (ꢁ)
g
Figure 19. Typical Reverse Recovery
Energy Loss vs. IC
Figure 20. Typical Reverse Recovery
Energy Loss vs. RG
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NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED)
I , Collector Current (A)
C
R , Gate Resistor (ꢁ)
g
Figure 21. Typical Reverse
Recovery Charge vs. IC
Figure 22. Typical Reverse
Recovery Charge vs. RG
I , Collector Current (A)
C
R , Gate Resistor (ꢁ)
g
Figure 24. Typical Reverse
Recovery Peak Current vs. RG
Figure 23. Typical Reverse
Recovery Peak Current vs. IC
I , Collector Current (A)
C
R , Gate Resistor (ꢁ)
g
Figure 25. Typical di/dt Current
Slope vs. IC
Figure 26. Typical di/dt Current
Slope vs. RG
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NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED)
Pulse on Time (s)
Figure 27. Transient Thermal Impedance − IGBT
Pulse on Time (s)
Figure 28. Transient Thermal Impedance − Inverse Diode
Pulse on Time (s)
Figure 29. Transient Thermal Impedance − Boost Diode
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NXH450B100H4Q2F2, NXH450B100H4Q2F2PG−R
TYPICAL CHARACTERISTICS − IGBT, INVERSE DIODE AND BOOST DIODE (CONTINUED)
V , Collector−Emitter Voltage (V)
CE
V , Collector−Emitter Voltage (V)
CE
Figure 30. Forward Safe
Operating Area
Figure 31. Reverse Safe
Operating Area
100000
10000
1000
100
10
1
0.1
0.1
10
1000
Qg (nC)
V , Collector to Emitter Voltage (V)
CE
Figure 33. Capacitance Charge
Figure 32. Gate Voltage vs. Gate Charge
Temperature (°C)
Figure 34. NTC Characteristics
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM56, 93x47 (PRESSFIT)
CASE 180BG
ISSUE O
DATE 31 JUL 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON09950H
PIM56 93X47 (PRESS FIT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM56, 93x47 (SOLDER PIN)
CASE 180BR
ISSUE O
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON15231H
PIM56 93X47 (SOLDER PIN)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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