NXH450N65L4Q2F2SG [ONSEMI]
Power Integrated Module (PIM), I-Type NPC 650 V, 450 A IGBT, 650 V, 375 A Diode;
| 型号： | NXH450N65L4Q2F2SG |
| 厂家： | 
ONSEMI |
| 描述： | Power Integrated Module (PIM), I-Type NPC 650 V, 450 A IGBT, 650 V, 375 A Diode PC 双极性晶体管 |
| 文件： | 总21页 (文件大小：2568K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
3-Level NPC Inverter
Module
NXH450N65L4Q2F2
The NXH450N65L4Q2F2 is a power module containing a I− type
neutral point clamped three−level inverter. The integrated field stop
trench IGBTs and FRDs provide lower conduction losses and
switching losses, enabling designers to achieve high efficiency and
superior reliability.
PIM40, Q2PACK
CASE 180BE
PIM36, Q2PACK
CASE 180CD
MARKING DIAGRAM
NXH450N65L4Q2F2xG
ATYYWW
Features
• Neutral Point Clamped Three−Level Inverter Module
• 650 V Field Stop 4 IGBTs
• Low Inductive Layout
• Solderable Pins
NXH450N65L4Q2F2x = Specific Device Code
G
AT
= Pb−Free Package
= Assembly & Test Site Code
YYWW = Year and Work Week Code
• Thermistor
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies Systems
PIN ASSIGNMENTS
16~19 BUS+
Q1
D1
20,21 G1A/B
22 E1
TP1 40
Q2
D5
D2
23 G2
24 E2
11,13,14 BUSN1
5,6,7 BUSN2
OUT1 25~28
OUT2 29~32
Q3
Q4
ORDERING INFORMATION
See detailed ordering and shipping information in the
dimensions section on page 5 of this data sheet.
D6
D3
D4
39 G3
38 E3
TP2 35
T1 33
T2 34
9,10 G4A/B
8 E4
1~4 BUS−
Figure 1. Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
NXH450N65L4Q2F2SG/D
February, 2023 − Rev. 11
NXH450N65L4Q2F2
Table 1. MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
OUTER IGBT (Q1−1, Q1−2, Q4−1, Q4−2)
Collector−Emitter Voltage
V
650
V
V
CES
Gate−Emitter Voltage
Positive Transient Gate−Emitter Voltage (t
20
30
V
GE
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C (T = 175°C)
I
C
167
501
365
150
A
A
c
J
Pulsed Collector Current (T = 175°C)
I
Cpulse
J
Maximum Power Dissipation (T = 175°C)
P
tot
W
°C
J
Maximum Operating Junction Temperature
INNER IGBT (Q2, Q3)
T
JMAX
Collector−Emitter Voltage
V
650
V
V
CES
Gate−Emitter Voltage
Positive Transient Gate−Emitter Voltage (t
20
30
V
GE
= 5 ms, D < 0.10)
pulse
Continuous Collector Current @ T = 80°C (T = 175°C)
I
280
840
633
150
A
A
c
J
C
Pulsed Collector Current (T = 175°C)
I
J
Cpulse
Maximum Power Dissipation (T = 175°C)
P
W
°C
J
tot
Maximum Operating Junction Temperature
NEUTRAL POINT DIODE (D5, D6)
Peak Repetitive Reverse Voltage
T
JMAX
V
650
271
813
559
150
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
c
J
Repetitive Peak Forward Current (T = 175°C)
I
A
J
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
J
tot
Maximum Operating Junction Temperature
INVERSE DIODES (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage
T
JMAX
V
650
131
450
288
150
V
A
RRM
Continuous Forward Current @ T = 80°C (T = 175°C)
I
F
c
J
Repetitive Peak Forward Current (t = 1 ms)
I
A
p
FRM
Maximum Power Dissipation (T = 175°C)
P
W
°C
J
tot
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMAX
Storage Temperature Range
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 50 Hz
Creepage Distance
T
−40 to 150
°C
stg
V
4000
12.7
V
RMS
is
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
Unit
Module Operating Junction Temperature
T
J
−40
T
JMAX
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
NXH450N65L4Q2F2
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OUTER IGBT (Q1−1, Q1−2, Q4−1, Q4−2)
Collector−Emitter Cutoff Current
Collector−Emitter Saturation Voltage
V
= 0 V, V = 650 V
I
CES
–
–
–
3.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.49
1.70
4.0
300
2.2
–
mA
GE
CE
V
= 15 V, I = 225 A, T = 25°C
V
V
V
GE
C
J
CE(sat)
V
GE
= 15 V, I = 225 A, T = 150°C
C J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
GE
= V , I = 2.25 mA
5.2
600
–
V
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
GES
−
nA
ns
GE
CE
T = 25°C
t
163
45
J
d(on)
V
CE
= 400 V, I = 100 A
C
Rise Time
t
r
–
V
GE
= −5 V to +15 V, R
= 15 W,
G(on)
= 15 W
Turn−off Delay Time
t
831
61
–
R
d(off)
G(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
on
E
off
2.344
3.125
141
51
–
mJ
ns
–
T = 125°C
t
t
–
J
d(on)
V
CE
= 400 V, I = 100 A
C
Rise Time
t
r
–
V
GE
= −5 V to +15 V, R
= 15 W,
G(on)
= 15 W
Turn−off Delay Time
898
80
–
R
d(off)
G(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
on
E
off
3.75
2.97
14630
230
64
–
mJ
pF
–
V
= 20 V, V = 0 V, f = 10 kHz
C
–
CE
GE
ies
oes
Output Capacitance
C
–
Reverse Transfer Capacitance
Total Gate Charge
C
–
res
V
= 480 V, I = 225 A, V = 0~ +15 V
Q
g
452
0.45
0.26
–
nC
CE
C
GE
Thermal Resistance − Chip−to−Heatsink
Thermal Resistance − Chip−to−Case
NEUTRAL POINT DIODE (D5, D6)
Diode Forward Voltage
Thermal grease,
Thickness = 2 Mil 2%, l = 2.8 W/mK
R
R
–
°C/W
°C/W
thJH
thJC
–
I = 375 A, T = 25°C
V
F
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.80
1.77
46
2.3
–
V
F
J
I = 375 A, T = 150°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
–
ns
mC
J
V
CE
= 400 V, I = 100 A
C
Reverse Recovery Charge
Q
1.5
–
rr
RRM
V
V
= −5 V to +15 V, R = 15 W
G
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
53
–
A
di/dt
2541
0.3
–
A/ms
mJ
E
rr
–
Reverse Recovery Time
T = 125°C
t
rr
75
–
ns
J
V
CE
= 400 V, I = 100 A
C
Reverse Recovery Charge
Q
4
–
mC
rr
RRM
= −5 V to +15 V, R = 15 W
GE
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
96
–
A
di/dt
2500
0.83
0.37
0.17
–
A/ms
mJ
E
rr
–
Thermal Resistance − Chip−to−Heatsink
Thermal Resistance − Chip−to−Case
Thermal grease,
R
–
°C/W
°C/W
thJH
thJC
Thickness = 2 Mil 2%, l = 2.8 W/mK
R
–
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3
NXH450N65L4Q2F2
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
INNER IGBT (Q2, Q3)
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector−Emitter Cutoff Current
V
= 0 V, V = 650 V
I
CES
–
–
–
3.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.49
1.72
4.1
300
2.2
–
mA
GE
CE
Collector−Emitter Saturation Voltage
V
= 15 V, I = 375 A, T = 25°C
V
V
V
GE
C
J
CE(sat)
V
GE
= 15 V, I = 375 A, T = 150°C
C J
Gate−Emitter Threshold Voltage
Gate Leakage Current
Turn−on Delay Time
V
GE
= V , I = 3.75 mA
5.2
1000
–
V
CE
C
GE(TH)
V
= 20 V, V = 0 V
I
GES
−
nA
ns
GE
CE
T = 25°C
t
134
47
J
d(on)
V
CE
= 400 V, I = 100 A
C
Rise Time
t
r
–
V
GE
= −5 V to +15 V, R
= 15 W,
G(on)
= 15 W
Turn−off Delay Time
t
709
32
–
R
d(off)
G(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
1.72
2.65
118
52
–
mJ
ns
on
off
E
–
T = 125°C
t
t
–
J
d(on)
V
CE
= 400 V, I = 100 A
C
Rise Time
t
r
–
V
GE
= −5 V to +15 V, R
= 15 W,
G(on)
= 15 W
Turn−off Delay Time
765
29
–
R
d(off)
G(off)
Fall Time
t
f
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
2.34
2.89
24383
383
105
753
0.31
0.15
–
mJ
pF
on
off
E
–
V
= 20 V, V = 0 V, f = 10 kHz
C
–
CE
GE
ies
Output Capacitance
C
–
oes
Reverse Transfer Capacitance
Total Gate Charge
C
–
res
V
= 480 V, I = 375 A, V = 0~ +15 V
Q
g
–
nC
CE
C
GE
Thermal Resistance − Chip−to−Heatsink
Thermal Resistance − Chip−to−Case
INVERSE DIODES (D1, D2, D3, D4)
Diode Forward Voltage
Thermal grease,
Thickness = 2 Mil 2%, l = 2.8 W/mK
R
R
–
°C/W
°C/W
thJH
thJC
–
I = 150 A, T = 25°C
V
F
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.78
1.77
43
2.3
–
V
F
J
I = 150 A, T = 150°C
F
J
Reverse Recovery Time
T = 25°C
t
rr
–
ns
mC
J
V
CE
= 400 V, I = 100 A
C
Reverse Recovery Charge
Q
1.14
46
–
rr
RRM
V
V
= −5 V to +15 V, R = 15 W
G
GE
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
–
A
di/dt
2473
0.313
67
–
A/ms
mJ
E
rr
–
Reverse Recovery Time
T = 125°C
t
rr
–
ns
J
V
CE
= 400 V, I = 100 A
C
Reverse Recovery Charge
Q
2.5
–
mC
rr
RRM
= −5 V to +15 V, R = 15 W
GE
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
I
66
–
A
di/dt
2317
0.625
0.58
0.33
–
A/ms
mJ
E
rr
–
Thermal Resistance − Chip−to−Heatsink
Thermal Resistance − Chip−to−Case
Thermal grease,
R
–
°C/W
°C/W
thJH
thJC
Thickness = 2 Mil 2%, l = 2.8 W/mK
R
–
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NXH450N65L4Q2F2
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
THERMISTOR CHARACTERISTICS
Nominal Resistance
Nominal Resistance
Deviation of R25
Test Conditions
Symbol
Min
Typ
Max
Unit
T = 25°C
R
–
–
22
1486
–
–
–
5
–
–
–
–
kW
W
25
T = 100°C
R
100
DR/R
−5
–
%
Power Dissipation
P
D
200
2
mW
mW/K
K
Power Dissipation Constant
B−value
–
B(25/50), tolerance 3%
B(25/100), tolerance 3%
–
3950
3998
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Orderable Part Number
Marking
Package
Shipping
NXH450N65L4Q2F2SG
NXH450N65L4Q2F2SG
PIM40, Q2PACK
(Pb−Free and Halide−Free)
12 Units / Blister Tray
NXH450N65L4Q2F2PG
NXH450N65L4Q2F2PG
PIM436 Q2PACK
(Pb−Free and Halide−Free)
12 Units / Blister Tray
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS − IGBT Q1−1, Q1−2, Q4−1, Q4−2 AND DIODE D1, D4
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
Figure 4. Typical Transfer Characteristics
Figure 5. Typical Transfer Characteristics
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS − IGBT Q1−1, Q1−2, Q4−1, Q4−2 AND DIODE D1, D4
Figure 6. Transient Thermal Impedance (Q1−1, Q1−2, Q4−1, Q4−2)
Figure 7. Transient Thermal Impedance (D1, D4)
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS − IGBT Q1−1, Q1−2, Q4−1, Q4−2 AND DIODE D1, D4
Figure 8. FBSOA (Q1−1, Q1−2, Q4−1, Q4−2)
Figure 9. RBSOA (Q1−1, Q1−2, Q4−1, Q4−2)
V
C
= 480 V
CE
I
= 225 A
V
GE
= 0~ +15 V
Figure 10. Gate Voltage vs. Gate Charge
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * IGBT Q2, Q3 AND DIODE D2, D3
Figure 11. Typical Output Characteristics
Figure 12. Typical Output Characteristics
Figure 13. Typical Transfer Characteristics
Figure 14. Typical Transfer Characteristics
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * IGBT Q2, Q3 AND DIODE D2, D3
Figure 15. Transient Thermal Impedance (Q2, Q3)
Figure 16. Transient Thermal Impedance (D2, D3)
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * IGBT Q2, Q3 AND DIODE D2, D3
Figure 17. FBSOA (Q2, Q3)
Figure 18. RBSOA (Q2, Q3)
V
C
= 480 V
CE
I
= 375 A
V
GE
= 0~ +15 V
Figure 19. Gate Voltage vs. Gate Charge
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * DIODE D5, D6
Figure 20. Diode Forward Characteristics
Figure 21. Transient Thermal Impedance (D5, D6)
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * Q1/Q4 IGBT COMUTATES D5/D6 DIODE
Figure 22. Typical Switching Loss Eon vs. IC
Figure 23. Typical Switching Loss Eoff vs. IC
Figure 25. Typical Switching Loss Eoff vs. RG
Figure 27. Typical Switching Time Tdoff vs. IC
Figure 24. Typical Switching Loss Eon vs. RG
Figure 26. Typical Switching Time Tdon vs. IC
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * Q1/Q4 IGBT COMUTATES D5/D6 DIODE
Figure 28. Typical Switching Time Tdon vs. RG
Figure 29. Typical Switching Time Tdoff vs. RG
Figure 31. Typical Reverse Recovery Energy vs. RG
Figure 33. Typical Reverse Recovery Time vs. RG
Figure 30. Typical Reverse Recovery Energy vs. IC
Figure 32. Typical Reverse Recovery Time vs. IC
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * Q1/Q4 IGBT COMUTATES D5/D6 DIODE
Figure 34. Typical Reverse Recovery Charge vs. IC
Figure 35. Typical Reverse Recovery Charge vs. RG
Figure 37. Typical Reverse Recovery Current vs. RG
Figure 39. Typical di/dt vs. RG
Figure 36. Typical Reverse Recovery Current vs. IC
Figure 38. Typical di/dt vs. IC
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * Q2/Q3 IGBT COMUTATES D1/D4 DIODE
Figure 40. Typical Switching Loss Eon vs. IC
Figure 41. Typical Switching Loss Eoff vs. IC
Figure 42. Typical Switching Loss Eon vs. RG
Figure 43. Typical Switching Loss Eoff vs. RG
Figure 44. Typical Turn−On Switching Time vs. IC
Figure 45. Typical Turn−Off Switching Time vs. IC
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * Q2/Q3 IGBT COMUTATES D1/D4 DIODE
Figure 46. Typical Turn−On Switching Time vs. RG
Figure 47. Typical Turn−Off Switching Time vs. RG
Figure 48. Typical Reverse Recovery Energy Loss vs.
IC
Figure 49. Typical Reverse Recovery Energy Loss
vs. RG
Figure 50. Typical Reverse Recovery Time vs. IC
Figure 51. Typical Reverse Recovery Charge vs. IC
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NXH450N65L4Q2F2
TYPICAL CHARACTERISTICS * Q2/Q3 IGBT COMUTATES D1/D4 DIODE
Figure 52. Typical Reverse Recovery Current vs. IC
Figure 53. Typical di/dt Current Slope vs. IC
Figure 54. Typical Reverse Recovery Time vs. RG
Figure 55. Typical Reverse Recovery Charge vs. RG
Figure 56. Typical Reverse Recovery Peak Current vs. RG
Figure 57. Typical di/dt vs. RG
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM40, 107.2x47
CASE 180BE
ISSUE C
DATE 27 JUL 2022
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON06409H
PIM40, 107.2x47
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM36, 93x47 (PRESSFIT)
CASE 180CD
ISSUE O
DATE 24 APR 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20719H
PIM36 93X47 (PRESS FIT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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