NXH50M65L4Q1SG [ONSEMI]
IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode;
| 型号： | NXH50M65L4Q1SG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode 双极性晶体管 |
| 文件： | 总13页 (文件大小：708K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
50 A, 650 V Module
Q1PACK Module
NXH50M65L4Q1SG,
NXH50M65L4Q1PTG
This high−density, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes.
Features
PIM27, 71x37.4
(SOLDER PIN)
CASE 180CA
PIM27, 71x37.4
(PRESSFIT PIN)
CASE 180CP
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Module Design Offers High Power Density
• Low Inductive Layout
MARKING DIAGRAM
• Q1PACK Packages with Solder and Pressfit Pins
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
7, 8, 25, 26
DC+
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
T12
T14
D20
6
1
G12
G14
5
S12
2
S14
D22
T21
D21
15, 16
Ph2
17, 18
Ph1
T22
D12
D14
T13
T11
14
13
27
20
19
S21 G21
A20
G22 S22
11
22
G11
G13
12
S11
21
S13
NTC
3
4
NTC2
NTC1
9, 10
DC−1
23,24
DC−2
Figure 1. Schematic
Figure 2. Pin Assignments
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
March, 2021 − Rev. 2
NXH50M65L4Q1SG/D
NXH50M65L4Q1SG, NXH50M65L4Q1PTG
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IGBT (T11, T12, T13, T14, T21, T22)
Collector−emitter voltage
V
I
650
48
V
A
CES
Collector current @ T = 80°C (per IGBT)
I
C
h
Pulsed collector current, T
limited by T
144
72
A
pulse
jmax
CM
Power Dissipation Per IGBT
T = T T = 80°C
P
W
tot
j
jmax,
h
Gate−emitter voltage
V
GE
20
V
Maximum Junction Temperature
DIODE (D12, D14, D20, D21, D22)
Peak Repetitive Reverse Voltage
T
175
°C
J
V
650
50
V
A
A
RRM
Forward Current, DC @ T = 80°C (per Diode)
I
F
h
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
225
FSM
Power Dissipation Per Diode
P
tot
86
W
T = T
, T = 80°C
j
jmax
h
Maximum Junction Temperature
THERMAL PROPERTIES
T
J
175
°C
Operating Temperature under switching condition
Storage Temperature range
T
−40 to (T
− 25)
°C
°C
VJ OP
jmax
T
stg
−40 to 125
INSULATION PROPERTIES
Isolation test voltage, t = 2 min, 60 Hz
Creepage distance
V
is
4000
12.7
Vac
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
IGBT (T11, T12, T13, T14, T21, T22)
Collector−emitter cutoff current
Collector−emitter saturation voltage
V
= 0 V, V = 650 V
I
CES
–
–
300
mA
GE
CE
V
GE
V
GE
= 15 V, I = 50 A, T = 25°C
V
V
–
–
1.56
1.76
2.22
–
V
C
j
j
CE(sat)
= 15 V, I = 50 A, T = 150°C
C
Gate−emitter threshold voltage
Gate leakage current
Turn−on delay time
Rise time
V
GE
V
GE
= V , I = 50mA
3.1
–
4.45
–
5.2
400
–
V
CE
C
GE(TH)
= 20 V, V = 0 V
I
nA
ns
CE
GES
T = 25°C
t
–
14
j
d(on)
V
V
=350 V, I = 50 A
C
CE
GE
t
r
–
20
–
= 15 V, −9 V, R = 6 W
G
Turn−off delay time
Fall time
t
–
68
–
d(off)
t
f
–
20
–
mJ
ns
Turn on switching loss
Turn off switching loss
Turn−on delay time
Rise time
E
E
–
0.46
0.44
16
–
on
off
–
–
T = 125°C
t
t
–
–
j
V
V
d(on)
= 350 V, I = 50 A
C
CE
t
–
23
–
r
= 15 V, −9 V, R = 6 W
GE
G
Turn−off delay time
Fall time
–
78
–
d(off)
t
–
52
–
f
mJ
Turn on switching loss
Turn off switching loss
E
on
E
off
–
0.78
0.60
–
–
–
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2
NXH50M65L4Q1SG, NXH50M65L4Q1PTG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
IGBT (T11, T12, T13, T14, T21, T22)
Input capacitance
Test Condition
Symbol
Min
Typ
Max
Unit
V
= 20 V, V = 0 V, f = 1 MHz
pF
C
–
–
–
–
–
3137
146
17
–
–
–
–
–
CE
GE
ies
Output capacitance
C
oes
Reverse transfer capacitance
Gate charge total
C
res
V
CE
= 350 V, I = 40 A, V
=
15 V
Q
g
180
1.32
nC
C
GE
Thermal grease, Thickness = 2.1 Mil
Thermal Resistance − chip−to−heatsink
R
R
°C/W
thJH
thJC
2%
Thermal Resistance − chip−to−case
–
0.96
–
°C/W
l = 2.9 W/mK
IGBT INVERSE DIODE (D12, D14, D21, D22)
Forward voltage
I = 50 A, T = 25°C
V
F
–
–
2.25
1.7
2.7
–
V
F
j
I = 50 A, T = 175°C
F
j
Reverse Recovery Time
t
–
–
–
–
–
–
–
–
–
–
–
–
28
281
18
–
–
–
–
–
–
–
–
–
–
–
–
ns
nc
rr
Reverse Recovery Current
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Reverse Recovery Time
Q
rr
T = 25°C
j
V
V
= 350 V, I = 50 A
C
I
A
CE
GE
rrm
= 15 V, −9 V, R = 6 W
G
Di/dt
1.42
33
A/ms
mJ
max
E
rr
t
rr
65
ns
Reverse Recovery Current
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
Thermal Resistance − chip−to−heatsink
Thermal Resistance − chip−to−case
DIODE (D20)
Q
1094
33
nc
rr
T = 125°C
j
V
V
= 350 V, I = 50 A
C
= 15 V, −9 V, R = 6 W
I
A
CE
GE
rrm
G
Di/dt
1.32
198
1.10
0.79
A/ms
mJ
max
E
rr
Thermal grease, Thickness = 2.1 Mil
2% l = 2.9 W/mK
R
°C/W
°C/W
thJH
thJC
R
Forward voltage
I = 50 A, T = 25°C
V
F
–
–
2.25
1.7
2.7
–
V
F
j
I = 50 A, T = 175°C
F
j
Reverse leakage current
V
= 650 V, V = 0 V
I
r
–
–
–
300
–
mA
CE
GE
Thermal grease, Thickness = 2.1 Mil
Thermal Resistance − chip−to−heatsink
R
R
1.10
°C/W
thJH
thJC
2%
Thermal Resistance − chip−to−case
–
0.79
–
°C/W
l = 2.9 W/mK
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
T = 25°C
R
−
−
22
1486
−
−
−
kW
W
25
T = 100°C
R
100
R/R
−5
−
5
%
Power dissipation
Power dissipation constant
B−value
P
200
2
−
mW
mW/°C
°C
D
−
−
B (25/50), tol 3%
B (25/100), tol 3%
−
−
3950
3998
B
B−value
−
−
°C
NTC reference
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NXH50M65L4Q1SG, NXH50M65L4Q1PTG
TYPICAL CHARACTERISTICS − IGBT (T11, T12, T13, T14, T21, T22)
200
180
160
140
120
100
80
200
T
= 25°C
T = 150°C
J
J
180
160
140
120
100
80
VGE = 7.000 V
VGE = 7.000 V
VGE = 8.000 V
VGE = 9.000 V
VGE = 10.00 V
VGE = 11.00 V
VGE = 13.00 V
VGE = 15.00 V
VGE = 17.00 V
VGE = 19.00 V
VGE = 20.00 V
VGE = 8.000 V
VGE = 9.000 V
VGE = 10.00 V
VGE = 11.00 V
VGE = 13.00 V
VGE = 15.00 V
VGE = 17.00 V
VGE = 19.00 V
VGE = 20.00 V
60
60
40
40
20
20
0
0
0
1
2
3
4
0
1
2
3
4
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Typical Output Characteristics
Figure 4. Typical Output Characteristics
200
180
160
140
120
100
80
160
140
120
100
80
60
60
40
40
T
T
T
= 25°C
= 125°C
= 150°C
J
J
J
T
T
T
= 25°C
= 125°C
= 150°C
J
J
J
20
20
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 5. Typical Transfer Characteristics
Figure 6. Diode Forward Characteristics
TYPICAL CHARACTERISTICS − (T11, T12, T13, T14) IGBT COMMUTATES D21, D22 DIODE
1200
1000
800
600
400
200
0
1000
V
V
= +15 V, −9 V
V
V
= +15 V, −9 V
GE
CE
g
GE
CE
g
900
800
700
600
500
400
300
200
100
0
= 350 V
= 350 V
R = 6 W
R = 6 W
25°C
125°C
25°C
125°C
0
10
20
30
40
(A)
50
60
70
80
0
10
20
30
40
(A)
50
60
70
80
I
I
C
C
Figure 7. Typical Turn ON Loss vs. IC
Figure 8. Typical Turn OFF Loss vs. IC
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NXH50M65L4Q1SG, NXH50M65L4Q1PTG
TYPICAL CHARACTERISTICS − (T11, T12, T13, T14) IGBT COMMUTATES D21, D22 DIODE (CONTINUED)
1000
900
800
700
600
500
400
1000
800
600
400
200
V
V
C
= +15 V, −9 V
GE
CE
= 350 V
I
= 50 A
V
V
C
= +15 V, −9 V
GE
CE
25°C
125°C
= 350 V
I
= 50 A
25°C
125°C
5
10
15
20
5
10
15
20
R (W)
g
R (W)
g
Figure 9. Typical Turn ON Loss vs. RG
Figure 10. Typical Turn OFF Loss vs. RG
150
100
50
40
35
30
25
20
15
10
5
V
V
= +15 V, −9 V
GE
CE
g
25°C
= 350 V
125°C
R = 6 W
t
r
V
V
= +15 V, −9 V
= 350 V
GE
CE
g
25°C
125°C
R = 6 W
T
d(off)
T
d(on)
t
f
0
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Typical Turn−Off Switching Time vs. IC
Figure 12. Typical Turn−On Switching Time vs. IC
160
35
V
V
C
= +15 V, −9 V
GE
CE
= 350 V
140
120
100
80
t
r
I
= 50 A
30
25
T
d(off)
25°C
125°C
T
d(on)
20
15
10
60
V
V
I
= +15 V, −9 V
GE
CE
C
= 350 V
t
f
= 50 A
40
25°C
125°C
20
0
5
10
15
20
5
10
g
15
20
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
Figure 13. Typical Turn−Off Switching Time vs. Rg
Figure 14. Typical Turn−On Switching Time vs. Rg
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NXH50M65L4Q1SG, NXH50M65L4Q1PTG
TYPICAL CHARACTERISTICS − (T21, T22) IGBT COMMUTATES D20 DIODE
1000
900
800
V
V
= +15 V, −9 V
V
V
= +15 V, −9 V
GE
CE
g
GE
CE
g
900
800
700
600
500
400
300
200
100
0
= 350 V
= 350 V
R = 6 W
R = 6 W
700
600
500
400
300
200
100
0
25°C
125°C
25°C
125°C
0
10
20
30
40
I
50
(A)
60
70
80
90
0
10
20
30
40
(A)
50
60
70
80
20
80
I
C
C
Figure 15. Typical Turn ON Loss vs. IC
Figure 16. Typical Turn OFF Loss vs. IC
800
700
600
500
400
300
200
1000
900
800
700
600
500
400
300
200
V
V
C
= +15 V, −9 V
V
V
C
= +15 V, −9 V
GE
CE
GE
CE
= 350 V
= 350 V
I
= 50 A
I
= 50 A
25°C
125°C
25°C
125°C
5
10
15
20
5
10
15
R (W)
g
R (W)
g
Figure 17. Typical Turn ON Loss vs. RG
Figure 18. Typical Turn OFF Loss vs. RG
150
100
50
80
70
60
50
40
30
20
10
0
V
V
= +15 V, −9 V
= 350 V
GE
CE
g
25°C
125°C
R = 6 W
V
V
= +15 V, −9 V
= 350 V
GE
CE
g
25°C
125°C
R = 6 W
T
d(off)
t
r
t
f
T
d(on)
0
0
0
20
40
60
10
20
30
40
50
60
70
80
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 19. Typical Turn−Off Switching Time vs. IC
Figure 20. Typical Turn−On Switching Time vs. IC
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NXH50M65L4Q1SG, NXH50M65L4Q1PTG
TYPICAL CHARACTERISTICS − (T21, T22) IGBT COMMUTATES D20 DIODE (CONTINUED)
180
160
140
120
100
80
50
V
V
I
= +15 V, −9 V
GE
CE
C
= 350 V
45
40
35
30
25
20
= 50 A
t
d(off)
t
r
V
V
C
= +15 V, −9 V
GE
CE
25°C
125°C
= 350 V
I
= 50 A
25°C
125°C
60
t
f
t
d(on)
40
20
0
5
10
15
20
5
10
15
20
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
g
Figure 21. Typical Turn−Off Switching Time vs. Rg
Figure 22. Typical Turn−On Switching Time vs. Rg
TYPICAL CHARACTERISTICS − DIODE
300
250
200
150
100
50
300
250
200
150
100
50
V
V
= +15 V, −9 V
GE
CE
g
= 350 V
R = 6 W
25°C
125°C
V
V
C
= +15 V, −9 V
GE
CE
= 350 V
I
= 50 A
25°C
125°C
0
0
0
10
20
30
40
(A)
50
60
70
80
5
10
15
20
I
R (W)
g
C
Figure 23. Typical Reverse Recovery Energy Loss vs. IC Figure 24. Typical Reverse Recovery Energy Loss vs. RG
1400
1200
1000
800
600
400
200
0
100
90
80
70
60
50
40
30
20
V
V
C
= +15 V, −9 V
GE
CE
= 350 V
I
= 50 A
25°C
125°C
V
V
C
= +15 V, −9 V
GE
CE
= 350 V
I
= 50 A
25°C
125°C
5
10
15
20
5
10
15
20
R , GATE RESISTOR (W)
g
R , GATE RESISTOR (W)
g
Figure 25. Typical Reverse Recovery Time vs. Rg
Figure 26. Typical Reverse Recovery Charge vs. Rg
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NXH50M65L4Q1SG, NXH50M65L4Q1PTG
TYPICAL CHARACTERISTICS − DIODE (CONTINUED)
1,5
1,45
1,4
40
35
30
25
20
15
10
V
V
C
= +15 V, −9 V
GE
CE
= 350 V
I
= 50 A
V
V
C
= +15 V, −9 V
25°C
125°C
GE
CE
= 350 V
1,35
1,3
I
= 50 A
25°C
125°C
1,25
1,2
1,15
1,1
5
10
g
15
20
5
10
g
15
20
R , GATE RESISTOR (W)
R , GATE RESISTOR (W)
Figure 27. Typical Reverse Recovery Peak Current vs. Rg
Figure 28. Typical di/dt vs. Rg
TYPICAL CHARACTERISTICS
15
120
100
80
60
40
20
0
13
11
9
7
5
3
1
−1
−3
−5
−7
−9
−11
−13
−15
V
CE
= 350 V
V
GE
= +15 V −9 V, T = T − 25°C
jmax
J
0
100
200
300
400
500
600
700
0
50
100
150
200
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Charge (nC)
Figure 29. RBSOA Reverse Safe Operating Area
Figure 30. IGBT Gate Charge
1000
100
50 ms
100 ms
1 ms
10
DC
1
0.1
Single Nonrepetitive Pulse T = 25°C,
C
Curves must be derated linearly with
increase in temperature
0.01
1
10
100
1000
V
CE
COLLECTOR−EMITTER VOLTAGE (V)
Figure 31. IGBT Safe Operating Area
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NXH50M65L4Q1SG, NXH50M65L4Q1PTG
TYPICAL THERMAL CHARACTERISTICS
10,0E+0
1,0E+0
Single pulse
@ 1% duty cycle
@ 2% duty cycle
@ 5% duty cycle
@ 10% duty cycle
@ 20% duty cycle
@ 50% duty cycle
100,0E−3
10,0E−3
100,0E−6
1,0E−3
10,0E−3
100,0E−3
1,0E+0
10,0E+0
100,0E+0
PULSE ON TIME (s)
Figure 32. Transient Thermal Impedance – IGBT
10,0E+0
1,0E+0
Single pulse
@ 1% duty cycle
@ 2% duty cycle
@ 5% duty cycle
@ 10% duty cycle
@ 20% duty cycle
@ 50% duty cycle
100,0E−3
10,0E−3
100,0E−6
1,0E−3
10,0E−3
1,0E+0
10,0E+0
100,0E+0
100,0E−3
PULSE ON TIME (s)
Figure 33. Transient Thermal Impedance – Diode
ORDERING INFORMATION
Device
Package Type
Status
Shipping
NXH50M65L4Q1SG (Solder Pin)
PIM27, 71x37.4
Q1PACK
In Development
21 Units / BTRAY
NXH50M65L4Q1PTG (Pressfit Pin)
PIM27, 71x37.4
Q1PACK
In Development
21 Units / BTRAY
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM27, 71x37.4 (SOLDER PIN)
CASE 180CA
ISSUE B
DATE 14 DEC 2022
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DOCUMENT NUMBER:
DESCRIPTION:
98AON20006H
PIM27, 71X37.4 (SOLDER PIN)
PAGE 1 OF 2
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM27, 71x37.4 (SOLDER PIN)
CASE 180CA
ISSUE B
DATE 14 DEC 2022
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
FRONTSIDE MARKING
2D
CODE
BACKSIDE MARKING
XXXXX = Specific Device Code
G
= Pb−Free Device
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON20006H
PIM27, 71X37.4 (SOLDER PIN)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM27, 71x37.4 (PRESSFIT PIN)
CASE 180CP
ISSUE A
DATE 20 DEC 2022
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
XXXXX = Specific Device Code
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26650H
PIM27, 71X37.4 (PRESSFIT PIN)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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