NXH50C120L2C2ES1G [ONSEMI]
IGBT Module, CIB 1200 V, 50 A IGBT - DBC with enhanced thermal conductivity;
| 型号： | NXH50C120L2C2ES1G |
| 厂家： | 
ONSEMI |
| 描述： | IGBT Module, CIB 1200 V, 50 A IGBT - DBC with enhanced thermal conductivity 双极性晶体管 |
| 文件： | 总12页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TMPIM 50 A CIB/CI Module
NXH50C120L2C2ESG,
NXH50C120L2C2ES1G
The NXH50C120L2C2ESG is a transfer−molded power module
with low thermal resistance substrate containing
a converter-inverter-brake circuit consisting of six 50 A, 1600 V
rectifiers, six 50 A, 1200 V IGBTs with inverse diodes, one 35 A,
1200 V brake IGBT with brake diode and an NTC thermistor.
The NXH50C120L2C2ES1G is a transfer−molded power module
with low thermal resistance substrate containing a converter−inverter
circuit consisting of six 50 A, 1600 V rectifiers, six 50 A, 1200 V
IGBTs with inverse diodes, and an NTC thermistor.
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Features
• Low Thermal Resistance Substrate for Low Thermal Resistance
• Lower Package Height than Standard Case Modules
• 6 mm Clearance distance between pin to heatsink
• Compact 73 mm × 40 mm × 8 mm Package
• Solderable Pins
DIP26 67.8x40
CASE 181AD
• Thermistor
MARKING DIAGRAM
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Industrial Motor Drives
• Servo Drives
DBPLUS
P
GUP
U
GVP
V
GWP
W
R
S
T
B
GB
GUN
GVN
GWN
TH1
TH2
ORDERING INFORMATION
DBMINUS
NB
NU
NV
NW
Figure 1. NXH50C120L2C2ESG Schematic Diagram
†
Device
Package Shipping
DBPLUS
P
NXH50C120L2C2ESG
DIP26
(Pb−Free)
6 Units /
Tube
NXH50C120L2C2ES1G
GUP
U
GVP
V
GWP
W
R
S
T
GUN
GVN
GWN
TH1
TH2
DBMINUS
NU
NV
NW
Figure 2. NXH50C120L2C2ES1G Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
October, 2020 − Rev. 1
NXH50C120L2C2/D
NXH50C120L2C2ESG, NXH50C120L2C2ES1G
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
IGBT (INVERTER, BRAKE)
Collector-emitter Voltage
Gate-emitter Voltage
V
1200
20
V
V
A
A
A
A
CES
V
GE
Inverter IGBT Continuous Collector Current @ T = 100°C (T
= 175°C)
I
C
50
C
VJmax
Inverter IGBT Pulsed Collector Current (T
= 175°C)
I
150
35
VJmax
Cpulse
Brake IGBT Continuous Collector Current @ T = 100°C (T
= 175°C)
I
C
C
VJmax
Brake IGBT Pulsed Collector Current (T
DIODE (INVERTER, BRAKE)
= 175°C)
I
105
VJmax
Cpulse
Peak Repetitive Reverse Voltage
V
1200
50
V
A
A
RRM
Inverter Diode Continuous Forward Current @ T = 80°C (Tv
Inverter Diode Repetitive Peak Forward Current (T
= 17°C)
I
F
c
Jmax
= 175°C)
I
150
94
VJmax
FRM
2
2
2
Inverter Diode I t value (60 Hz single half−sine wave)
I t
A t
Brake Diode Continuous Forward Current @ Tc = 80°C (T
= 175°C)
I
35
A
A
VJmax
F
Brake Diode Repetitive Peak Forward Current (T
= 175°C)
I
105
46
VJmax
FRM
2
2
Brake Diode I2t value (60 Hz single half−sine wave)
RECTIFIER DIODE
I t
A t
Peak Repetitive Reverse Voltage
V
1600
50
V
A
A
RRM
Continuous Forward Current @ T = 80°C (T
= 150°C)
I
F
C
VJmax
Repetitive Peak Forward Current (T
= 150°C)
I
150
VJmax
FRM
2
o
2
2
I t value (60 Hz single half−sine wave) @ 25 C
I t
1126
510
A t
o
(60 Hz single half−sine wave) @ 150 C
o
o
Surge current (10ms sin180 ) @ 25 C
MODULE THERMAL PROPERTIES
Storage Temperature Range
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 s, 50 Hz
Internal Isolation
IFSM
520
A
T
−40 to 125
°C
stg
V
3000
HPS
6.0
V
RMS
is
Creepage Distance
mm
mm
Clearance Distance
6.0
Comperative Tracking Index
CTI
>400
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
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2
NXH50C120L2C2ESG, NXH50C120L2C2ES1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
INVERTER IGBT CHARACTERISTICS
Collector-emitter Cutoff Current
Collector-emitter Saturation Voltage
V
V
V
V
V
= 0 V, V = 1200 V
I
CES
–
–
–
1.8
250
2.4
–
mA
GE
GE
GE
GE
GE
CE
= 15 V, I = 50 A, T = 25°C
V
V
V
C
J
CE(sat)
= 15 V, I = 50 A, T = 150°C
–
2
C
J
Gate-emitter Threshold Voltage
Gate Leakage Current
Turn-on Delay Time
= V , I = 6 mA
4.8
–
6
6.8
400
–
V
CE
C
GE(TH)
= 20 V, V = 0 V
I
–
nA
ns
CE
GES
T = 25°C
t
–
144
104
380
52
J
d(on)
V
V
= 600 V, I = 50 A
CE
GE
C
Rise Time
t
r
–
–
=
15 V, R = 15 W
G
Turn-off Delay Time
t
–
–
d(off)
Fall Time
t
f
–
–
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Turn-on Delay Time
E
–
5870
1700
136
112
432
184
9530
3800
11897
416
240
558
–
mJ
on
off
E
–
–
T = 150°C
t
t
–
–
ns
J
V
V
d(on)
= 600 V, I = 50 A
CE
GE
C
Rise Time
t
–
–
r
=
15 V, R = 15 W
G
Turn-off Delay Time
–
–
d(off)
Fall Time
t
–
–
f
Turn-on Switching Loss per Pulse
Turn-off Switching Loss per Pulse
Input Capacitance
E
on
E
off
–
–
mJ
–
–
V
= 20 V, V = 0 V, f = 100
C
–
–
pF
CE
GE
ies
oes
kHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
C
–
–
res
V
CE
V
GE
= 600 V, I = 50 A,
= 0 V ∼ 15 V
Q
g
–
–
nC
C
Temperature under switching conditions
Thermal Resistance − Chip-to-Case
INVERSE DIODE CHARACTERISTICS
Diode Forward Voltage
Tvj op
−40
150
–
°C
R
–
0.26
°C/W
thJC
I = 50 A, T = 25°C
V
F
–
–
1.9
1.7
2.7
–
V
F
J
I = 50 A, T = 150°C
F
J
Reverse Recovery Charge
T = 25°C
Q
–
2.58
20
–
mC
A
J
V
V
rr
= 600 V, I = 50 A
CE
GE
C
Peak Reverse Recovery Current
Reverse Recovery Energy
I
I
–
–
RRM
=
15 V, R = 15 W
G
E
rr
–
640
8.0
–
mJ
Reverse Recovery Charge
T = 150°C
Q
rr
RRM
–
–
mC
A
J
V
V
= 600 V, I = 50 A
CE
GE
C
Peak Reverse Recovery Current
Reverse Recovery Energy
–
32.5
2300
–
=
15 V, R = 15 W
G
E
rr
–
–
mJ
Temperature under switching conditions
Thermal Resistance − Chip-to-Case
Tvj op
−40
–
150
–
°C
R
0.42
°C/W
thJC
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3
NXH50C120L2C2ESG, NXH50C120L2C2ES1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
RECTIFIER DIODE CHARACTERISTICS
Diode Forward Voltage
I = 50 A, T = 25°C
V
F
–
–
1.2
1.1
1.6
–
V
F
J
I = 50 A, T = 150°C
F
J
Temperature under switching conditions
Thermal Resistance − Chip-to-Case
BRAKE IGBT CHARACTERISTICS
Collector-emitter Cutoff Current
Tvj op
−40
–
150
–
°C
R
0.33
°C/W
thJC
V
V
V
V
V
= 0 V, V = 1200 V
I
–
–
–
1.8
250
2.4
–
mA
GE
GE
GE
GE
GE
CE
CES
Collector-emitter Saturation Voltage
= 15 V, I = 35 A, T = 25°C
V
V
V
C
J
CE(sat)
= 15 V, I = 35 A, T = 125°C
–
1.9
C
J
Gate-emitter Threshold Voltage
= V , I = 4.25 mA
4.8
–
6
6.8
400
–
V
CE
C
GE(TH)
Gate Leakage Current
= 20 V, V = 0 V
I
–
nA
ns
CE
GES
Turn−on Delay Time
T
J
= 25°C
t
–
104
64
d(on)
V
CE
V
GE
= 600 V, I = 35 A
C
Rise Time
t
r
–
–
=
15 V, R = 15 W
G
Turn−off Delay Time
Fall Time
t
–
277
53
–
d(off)
t
f
–
–
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
Rise Time
E
E
–
2900
1200
168
72
–
mJ
on
off
–
–
T
V
V
= 150°C
t
t
–
–
ns
J
d(on)
= 600 V, I = 35 A
CE
GE
C
t
–
–
r
=
15 V, R = 15 W
G
Turn−off Delay Time
Fall Time
–
320
165
4030
2200
8333
298
175
360
–
d(off)
t
–
–
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Input Capacitance
E
on
E
off
–
–
mJ
–
–
V
= 20 V. V = 0 V.
C
–
–
pF
CE
GE
ies
oes
f = 100 kHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
–
–
C
–
–
res
V
V
= 600 V, I = 35 A,
= 0V ~ +15 V
Q
g
–
–
nC
CE
GE
C
Temperature under switching conditions
Thermal Resistance − Chip-to-Case
BRAKE DIODE CHARACTERISTICS
Brake Diode Reverse Leakage Current
Diode Forward Voltage
Tvj op
−40
150
–
°C
R
–
0.42
°C/W
thJC
VR = 1200 V
I = 35 A, T = 25°C
IR
–
–
–
−
2.2
2
200
2.7
–
mA
V
F
V
F
J
I = 35 A, T = 150°C
F
J
Reverse Recovery Time
T
V
V
= 25°C
t
224
1.51
18
ns
°C
A
J
rr
= 600 V, I = 35 A
CE
GE
C
Reverse Recovery Charge
Q
–
–
–
–
rr
=
15 V, R = 15 W
G
Peak Reverse Recovery Current
Reverse Recovery Energy
I
I
RRM
E
–
410
532
5,36
30
–
mJ
rr
Reverse Recovery Time
T = 150°C
t
rr
–
–
ns
J
V
V
= 600 V, I = 35 A
CE
GE
C
Reverse Recovery Charge
Q
rr
RRM
–
–
°C
A
=
15 V, R = 15 W
G
Peak Reverse Recovery Current
Reverse Recovery Energy
–
–
E
–
1983
–
mJ
rr
Temperature under switching conditions
Thermal Resistance − Chip-to-Case
Tvj op
−40
–
150
–
°C
°C/W
R
0.65
thJC
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4
NXH50C120L2C2ESG, NXH50C120L2C2ES1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
THERMISTOR CHARACTERISTICS
Nominal Resistance
Nominal Resistance
Deviation of R25
Test Conditions
Symbol
Min
Typ
Max
Unit
T = 25°C
R
–
–
5
493.3
–
–
–
5
–
–
–
–
kW
W
25
T = 100°C
R
100
DR/R
−5
–
%
Power Dissipation
P
D
20
mW
mW/K
K
Power Dissipation Constant
B-value
–
1.4
B(25/50), tolerance 2%
B(25/100), tolerance 2%
–
3375
3433
B-value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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5
NXH50C120L2C2ESG, NXH50C120L2C2ES1G
TYPICAL CHARACTERISTICS − INVERTER IGBT & INVERSE DIODE
150
120
90
60
30
0
150
25°C
150°C
120
V
= 20 V
GE
V
= 20 V
GE
90
60
30
0
V
= 11 V
GE
V
= 11 V
GE
0
0.5
1
1.5
2
2.5
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
V
, COLLECTOR − EMITTER VOLTAGE (V)
V
CE
, COLLECTOR − EMITTER VOLTAGE (V)
CE
Figure 3. Inverter IGBT Typical Output
Figure 4. Inverter IGBT Typical Output
Characteristic (255C)
Characteristic (1505C)
150
120
90
60
30
0
150
120
90
60
30
0
150°C
25°C
150°C
25°C
0
2
4
6
8
10
12
14
0
0.5
1
1.5
2
2.5
3
V
, Gate−Emitter Voltage (V)
V , Forward Voltage (V)
F
GE
Figure 5. Inverter IGBT Typical Transfer
Characteristic
Figure 6. Inverter Diode Typical Forward
Characteristic
30
25
20
15
10
10
25°C
25°C
V
V
= 600 V
= −15 V/15 V
= 15 W
9
8
7
6
5
4
3
2
1
0
V
V
= 600 V
= −15 V/15 V
= 15 W
CE
CE
150°C
150°C
GE
GE
R
R
G
G
5
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
Ic (A)
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
Ic (A)
Figure 7. Inverter IGBT Typical Turn On Loss vs IC
Figure 8. Inverter IGBT Typical Turn Off Loss vs IC
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6
NXH50C120L2C2ESG, NXH50C120L2C2ES1G
TYPICAL CHARACTERISTICS − INVERTER IGBT & INVERSE DIODE
3.5
35
25°C
V
V
= 600 V
= −15 V/15 V
= 15 W
125°C
150°C
V
V
I
= 600 V
CE
CE
GE
3
2.5
2
30
25
20
15
10
5
150°C
= −15 V/15 V
GE
R
= 50 A
G
C
1.5
1
0.5
0
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
If (A)
0
20
40
60
80
Rg (W)
100
120
140
160
Figure 9. Inverter Diode Typical Reverse Recovery
Energy vs IC
Figure 10. Inverter IGBT Typical Turn On Loss vs
RG
6
2.5
2
125°C
150°C
V
V
= 600 V
CE
GE
5
4
3
2
1
0
= −15 V/15 V
I
C
= 50 A
1.5
1
125°C
150°C
V
V
I
= 600 V
CE
GE
= −15 V/15 V
0.5
0
= 50 A
C
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Rg (W)
Rg (W)
Figure 11. Inverter IGBT Typical Turn Off Loss vs
RG
Figure 12. Inverter Diode Typical Reverse
Recovery Energy vs RG
18
15
12
9
V
V
= 600 V
= 15 V
CE
GE
I
C
= 50 V
6
3
0
0
50
100 150 200 250 300 350 400 450 500 550 600
Charge (nC)
Figure 13. Inverter IGBT Gate Voltage vs Gate
Charge
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7
NXH50C120L2C2ESG, NXH50C120L2C2ES1G
TYPICAL CHARACTERISTICS − INVERTER IGBT & INVERSE DIODE
1
50%
0.1
20%
10%
5%
0.01
0.001
2%
1%
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
pulse on time [s]
Figure 14. Inverter IGBT Junction−to−case Transient Thermal Impedance
1
50%
20%
10%
0.1
5%
2%
1%
0.01
0.001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
pulse on time [s]
Figure 15. Inverter Diode Junction−to−case Transient Thermal Impedance
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8
NXH50C120L2C2ESG, NXH50C120L2C2ES1G
TYPICAL CHARACTERISTICS − BRAKE IGBT & BRAKE DIODE
105
90
75
60
45
30
15
0
105
150°C
90
25°C
75
V
= 20 V
GE
V
= 20 V
60
45
30
15
0
GE
V
= 11 V
GE
V
= 11 V
GE
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
V
, COLLECTOR − EMITTER VOLTAGE (V)
V
CE
, COLLECTOR − EMITTER VOLTAGE (V)
CE
Figure 16. Brake IGBT Typical Output
Figure 17. Brake IGBT Typical Output
Characteristic (255C)
Characteristic (1505C)
105
90
75
60
45
30
15
0
105
90
75
60
45
30
15
0
150°C
25°C
150°C
25°C
0
2
4
6
8
10
12
14
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V , Forward Voltage (V)
F
V
, Gate−Emitter Voltage (V)
GE
Figure 18. Brake IGBT Typical Transfer
Characteristic
Figure 19. Brake Diode Typical Forward
Characteristic
18
V
V
= 600 V
= 15 V
CE
GE
15
12
9
I
C
= 35 A
6
3
0
0
50
100
150
200
250
300
350
Charge (nC)
Figure 20. Brake IGBT Gate Voltage vs Gate
Charge
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9
NXH50C120L2C2ESG, NXH50C120L2C2ES1G
TYPICAL CHARACTERISTICS − RECTIFIER
105
90
75
60
45
150°C
25°C
30
15
0
0
0.5
1.0
V , Forward Voltage (V)
1.5
2.0
F
Figure 21. Rectifier Typical Forward Characteristic
1
50%
20%
10%
0.1
5%
2%
0.01
1%
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
pulse on time [s]
Figure 22. Rectifier Junction−to−Case Transient Thermal Impedance
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10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DIP26 67.8x40
CASE 181AD
ISSUE B
DATE 05 AUG 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXX
ZZZATYWW
XXX = Specific Device Code
ZZZ = Assembly Lot Code
AT = Assembly & Test Location
Y
= Year
WW = Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON09519H
DIP26 67.8x40
PAGE 1 OF 1
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