NXH50M65L4C2ESG_技术文档

DATA SHEET

www.onsemi.com

TMPIM 650 V 50 A

Converter-Inverter-PFCs

Module

DIP27 73.2x40.2

CASE 184AA

Product Preview

NXH50M65L4C2ESG

MARKING DIAGRAM

The NXH50M65L4C2ESG is a transfer−molded power module

with advanced substrate containing a converter−inverter−PFC circuit

consisting of single phase converter with four 75 A, 1600 V rectifiers,

six 50 A, 600 V IGBTs with inverse diodes, 2−Channel interleaved

PFC containing two 75 A, 650 V PFC IGBT with inverse diode, two

50 A, 650 V PFC diode, and an NTC thermistor.

Features

• 2−Channel Interleaved PFC with Wide Switching Frequency

18 kHz ~ 65 kHz

XXX = Specific Device Code

ZZZ = Assembly Lot Code

AT = Assembly & Test Location

• Low Thermal Resistance Substrate for Low Thermal Resistance

Y

= Year

• 6 mm Clearance Distrance between Pin to Heatsink

• Compact 73 mm x 40 mm x 8 mm Package

• Solderable Pins

WW = Work Week

ORDERING INFORMATION

See detailed ordering and shipping information on page 18 of

this data sheet.

• Thermistor

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

This document contains information on a product under

development. onsemi reserves the right to change or

discontinue this product without notice.

Typical Applications

• Industrial Motor Drives

• Servo Drives

D7

DCP.1

L2

D8

P1.1

L1

T3

T5

T7

T1

D1

D3

D9

D11

GWH

D13

GUH

GVH

V

L

D5

GL1

EL1

N

U

W

T2

T4

T6

T8

D6

GL2

D2

D4

D10

D12

D14

GUL

GVL

GWL

EL2

T1

T2

N1.1

L2−

U−

V−

W−

L1−

Figure 1. NXH50M65L4C2ESG Schematic Diagram

1

Publication Order Number:

September, 2021 − Rev. P4

NXH50M65L4C2E/D

NXH50M65L4C2ESG

PIN CONFIGURATION TABLE

1

Name

N1.1

L1−

EL1

GL1

L2−

EL2

GL2

U−

2

3

4

5

6

7

8

Figure 2. Pin Configuration

9

GuL

V−

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

GvL

W−

GwL

T1

T2

Gwh

W

Gvh

V

Guh

U

DCP.1

L2

L1

P1.1

N

L

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2

NXH50M65L4C2ESG

MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

INVERTER IGBT (T3 − T8)

Collector−Emitter Voltage

Gate−Emitter Voltage

V

650

20

V

A

CES

V

GE

Continuous Collector Current @ T = 80°C (Tv

= 175°C)

I

C

50

c

Jmax

Pulsed Collector Current

I

150

Cpulse

INVERTER INVERSE DIODE (D9 − D14)

Peak Repetitive Reverse Voltage

V

RRM

600

30

V

A

Continuous Forward Current @ T = 80°C (Tv

I

F

c

Jmax

Repetitive Peak Forward Current

PFC IGBT (T1, T2)

I

90

FRM

Collector−Emitter Voltage

Gate−Emitter Voltage

V

650

20

V

A

CES

V

GE

Continuous Collector Current @ T = 80°C (Tv

= 175°C)

= 150°C)

I

C

75

c

Jmax

Pulsed Collector Current

I

225

Cpulse

PFC INVERSE DIODE (D5, D6)

Peak Repetitive Reverse Voltage

Continuous Forward Current @ T = 80°C (Tv

V

RRM

650

15

V

A

I

F

c

Jmax

Repetitive Peak Forward Current

PFC DIODE (D7, D8)

I

45

FRM

Peak Repetitive Reverse Voltage

V

RRM

650

50

V

A

Continuous Forward Current @ T = 80°C (Tv

I

F

c

Repetitive Peak Forward Current

CONVERTER DIODE (D1 − D4)

Peak Repetitive Reverse Voltage

I

150

FRM

V

RRM

1600

75

V

A

Continuous Forward Current @ T = 80°C (Tv

I

F

c

Repetitive Peak Forward Current

I

225

1200

635

FRM

2

I t Value (10 ms Single Half−sine Wave) @ 150°C

Surge Current (10 ms sin 180°) @ 25°C

THERMAL PROPERTIES

I t

A s

IFSM

A

Storage Temperature Range

INSULATION PROPERTIES

Isolation Test Voltage, t = 1 s, 50 Hz

Internal Isolation

T

−40 to 125

°C

stg

V

3000

HPS

6.0

V

RMS

is

Creepage Distance

mm

Clearance Distance

6.0

Comperative Tracking Index

CTI

>400

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

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3

NXH50M65L4C2ESG

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

J

Parameter

INVERTER IGBT CHARACTERISTICS (T3 − T8)

Test Condition

Symbol

Min

Typ

Max

Unit

Collector−Emitter Cutoff Current

V

= 0 V, V = 600 V

I

CES

–

1.6

1.8

4.7

–

250

2

mA

GE

CE

Collector−Emitter Saturation Voltage

= 15 V, I = 50 A, T = 25°C

V

C

J

CE(sat)

= 15 V, I = 50 A, T = 150°C

–

C

J

Gate−Emitter Threshold Voltage

Gate Leakage Current

Turn−on Delay Time

= V , I = 50 mA

3.8

–

5.7

400

–

V

CE

C

GE(TH)

= 20 V, V = 0 V

I

nA

ns

CE

GES

T = 25°C

t

–

41

J

d(on)

V

CE

V

GE

= 350 V, I = 21 A

C

Rise Time

t

r

–

24

–

= +15 V / −8 V, R = 25 W

G

Turn−off Delay Time

t

–

184

78

–

d(off)

Fall Time

t

f

–

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Turn−on Delay Time

E

–

270

450

52.8

25.2

232

140.2

390

710

2608

77

–

mJ

on

off

E

–

T = 125 °C

t

–

ns

J

V

d(on)

= 350 V, I = 21 A

CE

GE

C

Rise Time

t

–

r

= +15 V / −8 V, R = 25 W

G

Turn−off Delay Time

–

d(off)

Fall Time

t

–

f

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Input Capacitance

E

on

E

off

–

mJ

–

V

= 20 V. V = 0 V. f = 1 MHz

C

–

pF

CE

GE

ies

oes

Output Capacitance

C

–

Reverse Transfer Capacitance

Total Gate Charge

C

–

21

–

res

= 480 V, I = 50 A, V = −15 V~+15 V

Q

g

–

122

–

nC

°C

CE

C

GE

Temperature under switching conditions

Thermal Resistance − Chip−to−Case

Thermal Resistance − Chip−to−Heatsink

Tvj op

−40

–

150

–

R

0.41

0.81

°C/W

thJC

Thermal grease, Thickness ≈ 3mil,

l = 2.8 W/mK

R

–

thJH

INVERTER INVERSE DIODE CHARACTERISTICS (D9 − D14)

Diode Forward Voltage

I = 30 A, T = 25°C

V

–

−

–

1.9

1.6

34

2.7

–

V

F

J

F

I = 30 A, T = 150°C

F

J

Reverse Recovery Time

T = 25 °C

t

rr

−

ns

nC

A

J

V

CE

V

GE

= 350 V, I = 21 A

= +18 V / −8 V, R = 25 W

C

Reverse Recovery Charge

Q

210

11

–

rr

G

Peak Reverse Recovery Current

Reverse Recovery Energy

I

–

RRM

E

t

37

–

mJ

rr

Reverse Recovery Time

T = 125 °C

46

ns

J

rr

V

CE

V

GE

= 350 V, I = 21 A

= +15 V / −8 V, R = 25 W

C

Reverse Recovery Charge

Q

–

472

16

–

nC

A

rr

RRM

G

Peak Reverse Recovery Current

Reverse Recovery Energy

E

rr

–

82

–

mJ

Temperature under Switching Conditions

Thermal Resistance − Chip−to−Case

Thermal Resistance − Chip−to−Heatsink

Tvj op

−40

–

150

–

°C

R

0.7

1.0

°C/W

thJC

Thermal grease, Thickness ≈ 3 mil,

l = 2.8 W/mK

R

–

thJH

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4

NXH50M65L4C2ESG

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)

J

Parameter

Test Condition

Symbol

Min

Typ

Max

Unit

PFC IGBT CHARACTERISTICS (T1, T2)

Collector−Emitter Cutoff Current

Collector−Emitter Saturation Voltage

V

= 0 V, V = 650 V

I

CES

–

1.4

1.6

4.5

–

250

2.2

–

mA

GE

CE

= 15 V, I = 75 A, T = 25°C

V

C

J

CE(sat)

= 15 V, I = 75 A, T = 150°C

–

C

J

Gate−Emitter Threshold Voltage

Gate Leakage Current

Turn−on Delay Time

= V , I = 75 mA

3.8

–

5.7

400

–

V

CE

C

GE(TH)

= 20 V, V = 0 V

I

nA

ns

CE

GES

T = 25°C

t

–

47

J

d(on)

V

CE

V

GE

= 400 V, I = 24 A

C

Rise Time

t

r

–

12

–

= +15 V / −8 V, R = 10 W

G

Turn−off Delay Time

t

–

190

8

–

d(off)

Fall Time

t

f

–

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Turn−on Delay Time

E

–

240

250

45

–

mJ

on

off

E

–

T = 125 °C

t

–

ns

J

V

d(on)

= 400 V, I = 24 A

CE

GE

C

Rise Time

t

–

14

–

r

= +15 V / −8 V, R = 10 W

G

Turn−off Delay Time

–

218

25

–

d(off)

Fall Time

t

–

f

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Input Capacitance

E

–

390

350

4877

77

–

mJ

on

off

–

V

= 20 V, V = 0 V, f = 10 kHz

C

–

pF

CE

GE

ies

oes

Output Capacitance

C

–

Reverse Transfer Capacitance

Total Gate Charge

C

–

21

–

res

= 480 V, I = 75 A, V = 0 V~+15 V

Q

g

–

151

–

nC

°C

CE

C

GE

Temperature under Switching Conditions

Thermal Resistance − Chip−to−Case

Thermal Resistance − Chip−to−Heatsink

Tvj op

−40

–

150

–

R

0.46

0.81

°C/W

thJC

Thermal grease, Thickness ≈ 3 mil,

l = 2.8 W/mK

R

–

thJH

PFC IGBT INVERSE DIODE CHARACTERISTICS (D5, D6)

Rectifier Forward Voltage

I = 15 A, T = 25°C

V

F

–

1.9

1.8

2.4

–

V

F

J

I = 15 A, T = 150°C

F

J

Temperature under Switching Conditions

Thermal Resistance − Chip−to−Case

Thermal Resistance − Chip−to−Heatsink

Tvj op

−40

–

150

–

°C

R

2.04

2.4

°C/W

thJC

Thermal grease, Thickness ≈ 3 mil,

l = 2.8 W/mK

R

–

thJH

PFC DIODE CHARACTERISTICS (D7, D8)

Rectifier Reverse Leakage Current

Rectifier Forward Voltage

V

= 650 V

I

–

−

–

−

200

2.8

–

mA

R

I = 50 A, T = 25°C

F

V

2.1

1.7

24

V

J

F

I = 50 A, T = 150°C

F

J

Reverse Recovery Time

T = 25 °C

t

−

ns

nC

A

J

rr

V

CE

V

GE

= 400 V, I = 24 A

= +15 V / −8 V, R = 10 W

C

Reverse Recovery Charge

Peak Reverse Recovery Current

Reverse Recovery Energy

Q

456

32

–

rr

G

I

–

RRM

E

109

–

μJ

rr

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5

NXH50M65L4C2ESG

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)

J

Parameter

Test Condition

Symbol

Min

Typ

Max

Unit

PFC DIODE CHARACTERISTICS (D7, D8)

Reverse Recovery Time

T = 125 °C

t

36

902

42

ns

nC

J

V

rr

= 400 V, I = 24 A

CE

GE

C

Reverse Recovery Charge

Q

–

rr

= +15 V / −8 V, R = 10 W

G

Peak Reverse Recovery Current

Reverse Recovery Energy

I

A

RRM

E

–

209

–

mJ

rr

Temperature under Switching Conditions

Thermal Resistance − Chip−to−Case

Thermal Resistance − Chip−to−Heatsink

Tvj op

−40

–

150

–

°C

R

0.58

0.87

°C/W

thJC

Thermal grease, Thickness ≈ 3 mil,

l = 2.8 W/mK

R

–

thJH

CONVERTER DIODE CHARACTERISTICS (D1−D4)

Rectifier Reverse Leakage Current

Rectifier Forward Voltage

V

= 1600 V

I

–

−

200

1.7

–

mA

R

I = 75 A, T = 25°C

F

V

F

1.3

1.4

V

J

I = 75 A, T = 150°C

F

–

J

Temperature under Switching Conditions

Thermal Resistance − Chip−to−Case

Thermal Resistance − Chip−to−Heatsink

Tvj op

−40

–

150

–

°C

R

0.36

0.64

°C/W

thJC

Thermal grease, Thickness ≈ 3 mil,

l = 2.8 W/mK

R

–

thJH

THERMISTOR CHARACTERISTICS

Nominal Resistance

Deviation of R25

T = 25°C

R

–

5

493.3

–

5

–

kW

W

25

T = 100°C

R

100

DR/R

−5

–

%

Power Dissipation

Power Dissipation Constant

B−value

P

20

mW

mW/K

K

D

–

1.4

B (25/50), tolerance 2%

B (25/100), tolerance 2%

–

3375

3455

B−value

–

K

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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6

NXH50M65L4C2ESG

TYPICAL CHARACTERISTICS − T3 − T8 INVERTER IGBT & D9−D14 INVERSE DIODE

Figure 3. IGBT Typical Output Characteristics

Figure 4. IGBT Typical Output Characteristics

150

120

90

60

30

0

120

90

60

30

0

1

2

3

4

0

3

6

9

12

15

V , FORWARD VOLTAGE (V)

F

V

GE

, GATE−EMITTER VOLTAGE (V)

Figure 5. Typical Transfer Characteristics

Figure 6. Diode Typical Forward Characteristics

1.8

1.6

1.4

1.2

1

25°C

125°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

V

= +15 V, −8 V

= 350 V

= 21 A

GE

V

= +15 V, −8 V

= 350 V

GE

CE

I

C

Rg = 25 W

25°C

125°C

0.8

0.6

0.4

0.2

0

10

20

30

40

50

60

70

0

25

50

75

100

125

IC (A)

R (W)

g

Figure 7. Typical Turn ON Loss vs. IC

Figure 8. Typical Turn ON Loss vs. RG

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7

NXH50M65L4C2ESG

2

1.8

1.6

1.4

1.2

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

V

= +15 V, −8 V

= 350 V

GE

CE

Rg = 25 W

25°C

125°C

0.8

0.6

0.4

0.2

0

V

I

= +15 V, −8 V

= 350 V

= 21 A

GE

25°C

125°C

0.2

0.1

0

CE

C

0

10

20

30

40

IC (A)

50

60

70

0

25

50

75

100

125

R (W)

g

Figure 9. Typical Turn OFF Loss vs. IC

Figure 10. Typical Turn OFF Loss vs. RG

90

80

70

60

50

40

30

20

10

0

160

120

80

V

= +15 V, −8 V

= 350 V

25°C

GE

V

CE

125°C

Rg = 25 W

25°C

125°C

40

V

= +15 V, −8 V

= 350 V

= 21 A

GE

CE

I

C

0

10

20

30

40

50

60

70

0

25

50

75

100

125

R (W)

g

IC (A)

Figure 11. Typical Reverse Recovery Energy Loss

vs. IC

Figure 12. Typical Reverse Recovery Energy Loss

vs. RG

500

V

I

= +15 V, −8 V

= 350 V

= 21 A

V

= +15 V, −8 V

= 350 V

25°C

GE

25°C

GE

125°C

CE

400

300

200

100

0

400

300

200

100

0

Rg = 25 W

C

T

d(off)

T

d(off)

t_f

0

10

20

30

40

50

60

70

0

25

50

75

100

125

R , GATE RESISTOR (W)

g

IC, COLLECTOR CURRENT (A)

Figure 13. Typical Turn−Off Switching Time vs. IC

Figure 14. Typical Turn−Off Switching Time vs. Rg

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8

NXH50M65L4C2ESG

120

200

160

120

80

V

= +15 V, −8 V

= 350 V

= 21 A

V

= +15 V, −8 V

= 350 V

GE

25°C

100

80

60

40

20

0

V

I

CE

125°C

CE

T_d(on)

Rg = 25 W

C

T

d(on)

t_r

40

25°C

125°C

t_r

0

10

20

30

40

50

60

70

0

25

50

75

100

125

IC, COLLECTOR CURRENT (A)

R , GATE RESISTOR (W)

g

Figure 15. Typical Turn−On Switching Time vs. IC

Figure 16. Typical Turn−Off Switching Time vs. Rg

75

80

70

60

50

40

30

V

= +15 V, −8 V

= 350 V

GE

65

55

45

35

25

15

CE

I

C

= 21 A

V

= +15 V, −8 V

= 350 V

20

10

0

GE

25°C

125°C

CE

25°C

125°C

Rg = 25 W

0

25

50

75

100

125

0

10

20

30

40

50

60

70

I , COLLECTOR CURRENT (A)

C

R , GATE RESISTOR (W)

g

Figure 17. Typical Reverse Recovery Time vs. IC

Figure 18. Typical Reverse Recovery Time vs. RG

800

V

= +15 V, −8 V

= 350 V

GE

25°C

125°C

V

= +15 V, −8 V

= 350 V

= 21 A

GE

700

600

500

400

300

200

100

0

CE

600

400

200

0

Rg = 25 W

I

C

25°C

125°C

0

25

50

75

100

125

0

10

20

30

40

50

60

70

R , GATE RESISTOR (W)

g

I , COLLECTOR CURRENT (A)

C

Figure 19. Typical Reverse Recovery Charge vs. IC

Figure 20. Typical Reverse Recovery Charge vs. Rg

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9

NXH50M65L4C2ESG

18

16

14

12

10

8

20

16

12

8

V

= +15 V, −8 V

= 350 V

GE

V

= +15 V, −8 V

= 350 V

= 21 A

GE

4

0

CE

6

25°C

125°C

25°C

125°C

CE

Rg = 25 W

I

C

4

0

10

20

30

40

50

60

70

0

25

50

75

100

125

I , COLLECTOR CURRENT (A)

C

R , GATE RESISTOR (W)

g

Figure 21. Typical Reverse Recovery Peak Current

vs. IC

Figure 22. Typical Reverse Recovery Peak Current

vs. RG

800

600

400

200

1000

800

600

400

V

= +15 V, −8 V

= 350 V

GE

V

= +15 V, −8 V

= 350 V

= 21 A

GE

200

0

CE

25°C

125°C

CE

Rg = 25 W

125°C

I

C

0

25

50

75

100

125

0

10

20

30

40

50

60

70

R , GATE RESISTOR (W)

g

I , COLLECTOR CURRENT (A)

C

Figure 23. Typical di/dt Current Slope vs. IC

Figure 24. Typical di/dt Current Slope vs. RG

1

single pulse

0.1

0.01

@1% duty cycle

@2% duty cycle

@5% duty cycle

@10% duty cycle

@20% duty cycle

@50% duty cycle

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

PULSE ON TIME [s]

Figure 25. IGBT Junction−to−Case Transient Thermal Impedance

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10

NXH50M65L4C2ESG

1

0.1

single pulse

@1% duty cycle

@2% duty cycle

@5% duty cycle

@10% duty cycle

@20% duty cycle

@50% duty cycle

0.01

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

PULSE ON TIME [s]

Figure 26. Diode Junction−to−Case Transient Thermal Impedance

120

1000

100

10

1

50 ms

80

1 ms

dc operation

60

40

20

0

100 ms

Single Non−repetitive

Pulse T = 25°C

C

V

= +15 V, −8 V

GE

Curves must be derated

linearly with increase

in temperature

T = T

− 25°C

J

Jmax

R

= 25 W

Goff

0.1

1

10

100

1000

10000

0

200

400

600

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

Figure 27. IGBT FBSOA

Figure 28. IGBT RBSOA

100000

15

12

9

V

CE

= 480 V

10000

1000

100

10

C_iss

6

C_oss

3

f = 1 MHz

= 0 V

0

V

GE

−3

−6

−9

−12

−15

C_rss

1

0.1

0

10 20 30 40 50 60 70 80 90 100 110 120 130

0.1

1

10

100

CHARGE (nC)

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

Figure 29. IGBT Gate Voltage vs. Gate Charge

Figure 30. IGBT Capacitance vs. Collector−Emitter

Voltage

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11

NXH50M65L4C2ESG

TYPICAL CHARACTERISTICS − T1 − T2 PFC IGBT & D5 − D6 INVERSE DIODE

225

180

135

90

225

T = 150°C

T = 25°C

J

VGE=12V

VGE=14V

VGE=15V

VGE=16V

VGE=17V

VGE=18V

VGE=20V

180

135

90

45

0

VGE=14V

VGE=15V

VGE=16V

VGE=18V

VGE=20V

45

0

0.5

1

1.5

2

2.5

3

3.5

45

0

0.5

1

1.5

2

2.5

V

, COLLECTOR−EMITTER VOLTAGE (V)

V

, COLLECTOR−EMITTER VOLTAGE (V)

CE

Figure 31. IGBT Typical Output Characteristic

Figure 32. IGBT Typical Output Characteristic

225

45

25°C

150°C

25°C

125°C

180

135

90

45

0

30

15

0

0.5

1

1.5

2

2.5

3

0

1

2

3

4

5

6

7

8

V

GE

, GATE−EMITTER VOLTAGE (V)

V , FORWARD VOLTAGE (V)

F

Figure 33. IGBT Typical Transfer Characteristic

Figure 34. Diode Typical Forward Characteristic

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

1.2

V

= +15 V, −8 V

= 400 V

Rg = 10 W

V

= +15 V, −8 V

= 400 V

= 24 A

GE

25°C

125°C

GE

1

0.8

0.6

0.4

0.2

0

CE

I

C

25°C

125°C

0

10

20

30

40

50

60

70

80

5

10

15

20

25

30

35

40

R , GATE RESISTOR (W)

g

I , COLLECTOR CURRENT (A)

C

Figure 35. Typical Turn ON Loss vs. IC

Figure 36. Typical Turn ON Loss vs. Rg

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12

NXH50M65L4C2ESG

1.2

1

0.7

V

= +15 V, −8 V

= 400 V

= 24 A

V

= +15 V, −8 V

= 400 V

GE

25°C

GE

25°C

0.6

0.5

0.4

0.3

0.2

0.1

0

CE

125°C

CE

I

C

Rg = 10 W

0.8

0.6

0.4

0.2

0

5

10

15

20

25

R (W)

30

35

40

45

0

10

20

30

40

IC (A)

50

60

70

80

g

Figure 37. Typical Turn OFF Loss vs. IC

Figure 38. Typical Turn OFF Loss vs. RG

250

200

150

100

50

400

350

300

250

200

150

100

50

V

= +15 V, −8 V

= 400 V

GE

25°C

125°C

CE

Rg = 10 W

V

= +15 V, −8 V

= 400 V

= 24 A

GE

25°C

CE

125°C

I

C

0

10

20

30

40

IC (A)

50

60

70

5

10

15

20

25

R (W)

30

35

40

45

g

Figure 39. Typical Reverse Recovery Energy Loss

vs. IC

Figure 40. Typical Reverse Recovery Energy Loss

vs. RG

450

500

V

I

= +15 V, −8 V

= 400 V

= 24 A

V

= +15 V, −8 V

= 400 V

GE

25°C

400

350

300

250

200

150

100

50

25°C

125°C

CE

400

300

200

Rg = 10 W

C

T

d(off)

T

d(off)

100

0

t_f

t _f

0

10

20

30

40

50

60

70

5

10

15

20

25

30

35

40

45

R , GATE RESISTOR (W)

g

IC, COLLECTOR CURRENT (A)

Figure 41. Typical Turn−Off Switching Time vs. IC

Figure 42. Typical Turn−Off Switching Time vs. Rg

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13

NXH50M65L4C2ESG

100

80

60

40

20

0

90

V

I

= +15 V, −8 V

= 400 V

= 24 A

V

= +15 V, −8 V

= 400 V

GE

25°C

80

70

60

50

40

30

20

10

0

125°C

CE

T

d(on)

CE

Rg = 10 W

C

T

d(on)

25°C

125°C

t_r

0

10

20

30

40

50

60

70

80

5

10

15

20

25

30

35

40

45

R , GATE RESISTOR (W)

g

I , COLLECTOR CURRENT (A)

C

Figure 43. Typical Turn−On Switching Time vs. IC

Figure 44. Typical Turn−Off Switching Time vs. Rg

50

40

30

20

60

40

20

V

= +15 V, −8 V

= 400 V

GE

V

= +15 V, −8 V

= 400 V

= 24 A

GE

10

0

CE

25°C

125°C

25°C

125°C

CE

Rg = 10 W

I

C

0

5

10

15

20

25

30

35

40

45

0

10

20

30

40

50

60

70

80

I , COLLECTOR CURRENT (A)

C

R , GATE RESISTOR (W)

g

Figure 45. Typical Reverse Recovery Time vs. IC

Figure 46. Typical Reverse Recovery Time vs. RG

1500

1200

900

600

300

0

1000

900

800

700

600

500

400

300

V

= +15 V, −8 V

= 400 V

GE

CE

Rg = 10 W

V

= +15 V, −8 V

= 400 V

= 24 A

200

100

0

GE

25°C

CE

125°C

I

C

5

10

15

20

25

30

35

40

45

0

10

20

30

40

50

60

70

80

R , GATE RESISTOR (W)

g

I , COLLECTOR CURRENT (A)

C

Figure 47. Typical Reverse Recovery Charge vs. IC

Figure 48. Typical Reverse Recovery Charge vs. Rg

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14

NXH50M65L4C2ESG

45

40

35

30

25

20

15

80

60

40

20

0

V

= +15 V, −8 V

= 400 V

GE

25°C

125°C

CE

Rg = 10 W

V

= +15 V, −8 V

= 400 V

= 24 A

GE

25°C

125°C

CE

10

5

I

C

0

10

20

30

40

50

60

70

80

5

10

15

20

25

30

35

40

45

I , COLLECTOR CURRENT (A)

C

R , GATE RESISTOR (W)

g

Figure 49. Typical Reverse Recovery Peak Current

vs. IC

Figure 50. Typical Reverse Recovery Peak Current

vs. RG

3000

2500

2000

1500

1000

2000

1600

1200

800

V

= +15 V, −8 V

= 400 V

GE

25°C

V

= +15 V, −8 V

= 400 V

= 24 A

GE

400

0

500

0

125°C

25°C

CE

Rg = 10 W

125°C

I

C

0

10

20

30

40

50

60

70

80

5

10

15

20

25

30

35

40

45

R , GATE RESISTOR (W)

g

I , COLLECTOR CURRENT (A)

C

Figure 51. Typical di/dt Current Slope vs. IC

Figure 52. Typical di/dt Current Slope vs. RG

1

single pulse

0.1

0.01

@1% duty cycle

@2% duty cycle

@5% duty cycle

@10% duty cycle

@20% duty cycle

@50% duty cycle

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

PULSE ON TIME [s]

Figure 53. IGBT Junction−to−Case Transient Thermal Impedance

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15

NXH50M65L4C2ESG

10

1

single pulse

@1% duty cycle

@2% duty cycle

@5% duty cycle

@10% duty cycle

@20% duty cycle

@50% duty cycle

0.1

0.01

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

PULSE ON TIME [s]

Figure 54. Diode Junction−to−Case Transient Thermal Impedance

200

1000

160

50 ms

100

10

1

1 ms

100 ms

120

80

40

0

dc operation

Single Non−repetitive

V

GE

= +15 V, −8 V

Pulse T = 25°C

C

Curves must be derated

linearly with increase

in temperature

T = T

− 25°C

J

Jmax

R

= 25 W

Goff

0.1

1

10

100

1000

0

200

400

600

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

V

CE

, COLLECTOR−EMITTER VOLTAGE (V)

Figure 55. IGBT FBSOA

Figure 56. IGBT RBSOA

10000

1000

100

10

15

12

9

C_iss

C_oss

6

C_rss

f = 10 kHz

= 0 V

V

GE

3

1

0

0.1

0

20

40

60

80

100 120 140 160

1

10

, COLLECTOR−EMITTER VOLTAGE (V)

CE

100

Q , GATE CHARGE (nC)

V

G

Figure 57. IGBT Gate Voltage vs. Gate Charge

Figure 58. IGBT Capacitance vs. Collector−Emitter

Voltage

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16

NXH50M65L4C2ESG

TYPICAL CHARACTERISTICS − D7, D8 PFC DIODE & D1 − D4 CONVERTER DIODE

150

100

50

225

25°C

180

135

90

45

0

125°C

0

0.5

1

1.5

2

2.5

3

0

1

2

3

4

V , FORWARD VOLTAGE (V)

F

V , FORWARD VOLTAGE (V)

F

Figure 59. PFC Diode Forward Characteristics

Figure 60. Converter Diode Forward

Characteristics

1

single pulse

0.1

0.01

@1% duty cycle

@2% duty cycle

@5% duty cycle

@10% duty cycle

@20% duty cycle

@50% duty cycle

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

PULSE ON TIME [s]

Figure 61. PFC Diode Junction−to−Case Transient Thermal Impedance

1

single pulse

0.1

@1% duty cycle

@2% duty cycle

@5% duty cycle

@10% duty cycle

@20% duty cycle

@50% duty cycle

0.01

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

PULSE ON TIME [s]

Figure 62. Converter Diode Junction−to−Case Transient Thermal Impedance

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17

NXH50M65L4C2ESG

ORDERING INFORMATION

Device Order Number

Specific Device Marking

NXH50M65L4C2ESG

Package Type

Shipping

NXH50M65L4C2ESG

6 Units / Tube

DIP27 73.2x40.2

(Pb−Free)

www.onsemi.com

18

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

DIP27 73.2x40.2

CASE 184AA

ISSUE B

DATE 15 JUL 2021

MILLIMETERS

DIM

MIN

NOM

16.00

MAX

16.50

8.20

15.50

7.80

A

SEATING PLANE

8.00

A2

A3

b

SIDE VIEW

C

6.00 REF

1.20

1.10

0.70

1.30

0.90

A

0.80

c

72.70

67.30

73.20

73.70

68.30

D

67.80

D1

D2

E

B

15

1

57.30 REF

40.20

39.70

46.70

40.70

47.70

47.20

E1

E2

e

33.87 REF

2.54 BSC

4.20

4.00

4.40

F

8.00 REF

4.00

L

3.50

4.50

L1

M

4°

5°

6°

16

27

END VIEW

NOTES:

TOP VIEW

1.Dimensioning and tolerancing as per ASME Y14.5M, 2009

2.Controlling Dimension: Millimeters

3.Dimensions are exclusive of Burrs, Mold Flash, and Tiebar extrusions

4.Dimensions ”b” and ”c” apply to plated leads

SIDE VIEW

5.Position of the leads is determine at the root of the lead where it exits

the package body

16

27

GENERIC

MARKING DIAGRAM*

XXXXXXXXXXXXXXXXX

ZZZATYWW

15

1

PIN 1 Identifier

BOTTOM VIEW

XXX = Specific Device Code

ZZZ = Assembly Lot Code

A

T

Y

= Assembly Site

= Test Site

= Year

WW = Work Week

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON23070H

DIP27 73.2x40.2

PAGE 1 OF 1

ON Semiconductor and

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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

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


型号：	NXH50M65L4C2ESG
厂家：	ONSEMI
描述：	650V 50A Converter-Inverter-PFCs Module with Enhanced Substrate 功率因数校正
文件：	总20页 (文件大小：896K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NXH50M65L4C2ESG [ONSEMI]

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