PCFFS05120AF [ONSEMI]
SiC 二极管，1200V，5A，裸片;
| 型号： | PCFFS05120AF |
| 厂家： | 
ONSEMI |
| 描述： | SiC 二极管，1200V，5A，裸片 二极管 |
| 文件： | 总5页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
5 A, 1200 V, D1, Die
Anode
PCFFS05120AF
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature dependent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operation frequency, increased power density, reduced EMI, and
reduced system size and cost.
DIE LAYOUT
(Dimension: mm, Except Scribe Lane)
1610
Features
• Max Junction Temperature 175°C
• Avalanche Rated 55 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
Applications
Passivation Information
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
• Passivation Material: Polymide (PSPI)
• Passivation Type: Local Passivation
• Passivation Thickness: 90KA
Die Information
CROSS SECTION
• Wafer Diameter: 6 inch
• Die Size: 1,690 x 1,690 mm (Include Scribe Lane)
• Metallization
♦ Top: Ti / TiN / AI 4 mm
♦ Back: Ti/ NiV / Ag
• Die Thickness: Typ. 200 mm
• Bonding Pad Size
♦ Anode: 1,110 x 1,110 mm
• Recommended Wire Bond (Note 1)
♦ Anode: 12 mil x 1
NOTE:
1. Based on TO−247 package of onsemi
ORDERING INFORMATION
Part Number
Die Size
Package
1,690 x 1,690 mm
N/A
PCFFS05120AF
(Include Scribe Lane)
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January, 2023 − Rev. 2
PCFFS05120AF/D
PCFFS05120AF
ELECTRICAL CHARACTERISTICS ON WAFER (Note 2) (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Reverse Blocking Voltage
Forward Voltage
Test Condition
Min
1200
1.20
−
Typ
−
Max
−
Unit
V
V
R
I
= 200 mA, T = 25°C
R
C
V
F
I = 5 A, T = 25°C
−
1.75
200
V
F
C
I
R
Reverse Current
V
= 1200 V, T = 25°C
−
mA
R
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Tested 100% on wafer
The Configuration of Chips (Based on 6 Inch Wafer)
chip
chip
Scribe Lane
80.0 mm
PSPI Passivation Line
chip
chip
Sawn−on−film frame packing based on tested wafer
Figure 1. The Configuration of Chips (Based on 6 Inch Wafer)
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2
PCFFS05120AF
ABSOLUTE MAXIMUM RATINGS ON TO−247 PACKAGE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Ratings
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
1200
E
Single Pulse Avalanche Energy (Note 3)
55
mJ
A
AS
I
Continuous Rectified Forward Current @ T < 148°C
5
380
F
C
I
Non−Repetitive Peak Forward Surge Current
A
T
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
330
A
C
I
Non−Repetitive Forward Surge Current
Repetitive Forward Surge Current
Half−Sine Pulse, t = 8.3 ms
42
A
F,SM
p
I
Half−Sine Pulse, t = 8.3 ms
21
A
F,RM
p
T , T
Operating and Storage Temperature Range
−55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
3. EAS of 55 mJ is based on starting T = 25°C, L = 0.5 mH, I = 15 A, V = 150 V.
J
AS
ELECTRICAL CHARACTERISTICS ON TO−247 PACKAGE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
Min
−
Typ
1.45
1.7
2
Max
1.75
2
Unit
V
F
I = 5 A, T = 25°C
V
F
C
I = 5 A, T = 125°C
−
F
C
I = 5 A, T = 175°C
−
2.4
200
300
400
−
F
C
I
R
Reverse Current
V
R
= 1200 V, T = 25°C
−
−
mA
C
V
R
V
R
= 1200 V, T = 125°C
−
−
C
= 1200 V, T = 175°C
−
−
C
Q
C
Total Capacitive Charge
Total Capacitance
V = 800 V
−
37
337
33
26
nC
pF
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
101
10
T = −55°C
J
8
T = 25°C
J
100
T = 175°C
J
T = 125°C
J
6
T = 75°C
J
10−1
T = 125°C
J
4
T = 75°C
J
T = 175°C
J
10−2
T = 25°C
J
2
T = −55°C
J
10−3
200
0
0.0
400
600
800
1000
1200
0.5
1.0
1.5
2.0
2.5
3.0
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 2. Forward Characteristics
Figure 3. Reverse Characteristics
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3
PCFFS05120AF
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
1.0
0.8
0.6
0.4
0.2
0.0
100
D = 0.1
T = −55°C
J
80
T = 25°C
J
T = 75°C
J
60
T = 125°C
J
D = 0.2
T = 175°C
J
40
20
0
D = 0.3
D = 0.5
D = 1
D = 0.7
1000
1100
1200
1300
1400
25
50
75
100
125
150
175
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 4. Reverse Characteristics
Figure 5. Current Derating
50
40
30
20
10
0
100
80
60
40
20
0
25
50
75
100
125
150
175
0
200
400
600
800
1000
T , CASE TEMPERATURE (°C)
C
V , REVERSE VOLTAGE (V)
R
Figure 6. Power Derating
Figure 7. Capacitive Charge vs. Reverse Voltage
1000
100
0
15
10
5
0
0
200
400
600
800
1000
0.1
1
10
100
1000
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 8. Capacitance vs. Reverse Voltage
Figure 9. Capacitance Stored Energy
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4
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