SMMBT5088LT1G [ONSEMI]
Low Noise Transistors;
| 型号： | SMMBT5088LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Low Noise Transistors 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBT5088L, MMBT5089L
Low Noise Transistors
NPN Silicon
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
www.onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT−23 (TO−236)
CASE 318
MAXIMUM RATINGS
STYLE 6
Rating
Symbol
Value
Unit
COLLECTOR
3
Collector−Emitter Voltage
MMBT5088L
V
CEO
V
CBO
V
EBO
Vdc
30
25
MMBT5089L
1
BASE
Collector−Base Voltage
MMBT5088L
Vdc
35
30
MMBT5089L
2
EMITTER
Emitter−Base Voltage
4.5
50
Vdc
Collector Current − Continuous
I
C
mAdc
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1x M G
Total Device Dissipation FR−5 Board,
P
D
G
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
1
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
1x = Device Code
x = Q for MMBT5088L
SMMBT5088L
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
x = R for MMBT5089L
SMMBT5089L
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
M
= Date Code*
G
= Pb−Free Package
T , T
J
−55 to +150
stg
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT5088LT1G,
SMMBT5088LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
NSVMMBT5088LT3G SOT−23 10,000 / Tape &
(Pb−Free)
Reel
MMBT5089LT1G,
SMMBT5089LT1G
SOT−23
(Pb−Free)
3,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 6
MMBT5088LT1/D
MMBT5088L, MMBT5089L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
(BR)CEO
(I = 1.0 mAdc, I = 0)
MMBT5088L
MMBT5089L
30
25
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
Vdc
nAdc
nAdc
(BR)CBO
MMBT5088L
MMBT5089L
35
30
−
−
C
E
Collector Cutoff Current
(V = 20 Vdc, I = 0)
I
CBO
MMBT5088L
MMBT5089L
−
−
50
50
CB
E
(V = 15 Vdc, I = 0)
CB
E
Emitter Cutoff Current
I
EBO
(V
EB(off)
(V
EB(off)
= 3.0 Vdc, I = 0)
MMBT5088L
MMBT5089L
−
−
50
100
C
= 4.5 Vdc, I = 0)
C
ON CHARACTERISTICS
DC Current Gain
(I = 100 mAdc, V = 5.0 Vdc)
C
h
FE
−
MMBT5088L
MMBT5089L
300
400
900
1200
CE
(I = 1.0 mAdc, V = 5.0 Vdc)
MMBT5088L
MMBT5089L
350
450
−
−
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
MMBT5088L
MMBT5089L
300
400
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
0.5
0.8
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
MHz
pF
pF
−
T
(I = 500 mAdc, V = 5.0 Vdc, f = 20 MHz)
50
−
−
C
CE
Collector−Base Capacitance
(V = 5.0 Vdc, I = 0, f = 1.0 MHz emitter guarded)
C
C
h
cb
eb
fe
4.0
10
CB
E
Emitter−Base Capacitance
(V = 0.5 Vdc, I = 0, f = 1.0 MHz collector guarded)
−
EB
C
Small Signal Current Gain
(I = 1.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz)
MMBT5088L
MMBT5089L
350
450
1400
1800
C
CE
Noise Figure
NF
dB
(I = 100 mAdc, V = 5.0 Vdc, R = 10 kW, f = 1.0 kHz)
C
MMBT5088L
MMBT5089L
−
−
3.0
2.0
CE
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
www.onsemi.com
2
MMBT5088L, MMBT5089L
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
30
20
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
R ≈ 0
20
I
C
= 10 mA
R ≈ 0
S
S
f = 10 Hz
10 kHz
3.0 mA
1.0 mA
10
7.0
5.0
10
7.0
5.0
100 Hz
1.0 kHz
300 mA
100 kHz
5.0
3.0
3.0
0.01 0.02
10 20 50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
0.05 0.1
0.2
0.5 1.0
2.0
10
I , COLLECTOR CURRENT (mA)
C
Figure 2. Effects of Frequency
Figure 3. Effects of Collector Current
10
20
16
BANDWIDTH = 1.0 Hz
7.0
5.0
I
C
= 10 mA
3.0
2.0
BANDWIDTH = 10 Hz to 15.7 kHz
3.0 mA
1.0 mA
12
8.0
4.0
0
1.0
0.7
0.5
I
C
= 1.0 mA
500 mA
100 mA
10 mA
300 mA
100 mA
30 mA
0.3
0.2
10 mA
R ≈ 0
S
0.1
10 20 50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
f, FREQUENCY (Hz)
10 20
50 100 200 500 1ꢀk 2ꢀk
5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
R , SOURCE RESISTANCE (OHMS)
S
Figure 4. Noise Current
Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
300
200
20
BANDWIDTH = 1.0 Hz
I = 10 mA
C
3.0 mA
16
12
I
C
= 10 mA
100 mA
3.0 mA
1.0 mA
100
70
1.0 mA
50
30
20
300 mA
300 mA
8.0
30 mA
100 mA
30 mA
10
10 mA
4.0
0
7.0
5.0
10 mA
BANDWIDTH = 1.0 Hz
10 20 50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
3.0
10 20
50 100 200 500 1ꢀk 2ꢀk 5ꢀk 10ꢀk 20ꢀk 50ꢀk 100ꢀk
R , SOURCE RESISTANCE (OHMS)
S
R , SOURCE RESISTANCE (OHMS)
S
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
www.onsemi.com
3
MMBT5088L, MMBT5089L
4.0
3.0
V
CE
= 5.0 V
2.0
T = 125°C
A
25°C
1.0
0.7
-ꢁ55°C
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
Figure 8. DC Current Gain
1.0
-ꢁ0.4
-ꢁ0.8
T = 25°C
J
0.8
0.6
0.4
0.2
0
V
BE
@ V = 5.0 V
CE
-ꢁ1.2
-ꢁ1.6
-ꢁ2.0
-ꢁ2.4
T = 25°C to 125°C
J
-ꢁ55°C to 25°C
V
@ I /I = 10
C B
CE(sat)
0.01 0.02 0.05 0.1 0.2
1.0 2.0 5.0
0.01 0.02 0.05 0.1 0.2
1.0 2.0 5.0
0.5
10 20
50 100
0.5
10 20
50 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 9. Temperature Coefficients
8.0
6.0
500
T = 25°C
J
300
200
C
ob
C
ib
4.0
3.0
C
eb
C
cb
2.0
100
V
= 5.0 V
CE
70
50
T = 25°C
J
1.0
0.8
0.1
0.2
1.0
2.0
5.0
1.0
2.0 3.0
5.0 7.0
0.5
10
20
50 100
10
20 30
50 70 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 12. Capacitance
Figure 10. Current−Gain — Bandwidth Product
www.onsemi.com
4
MMBT5088L, MMBT5089L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
STYLE 6:
SEE VIEW C
SIDE VIEW
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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◊
MMBT5088LT1/D
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