2SD2266O [PANASONIC]
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN;型号: | 2SD2266O |
厂家: | PANASONIC |
描述: | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MT4, 3 PIN 开关 晶体管 |
文件: | 总4页 (文件大小:189K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Power Transistors
2SD2266
Silicon NPN triple diffusion planar type
Unit: mm
For power switching
10.0 0.ꢀ
5.0 0.1
1.0 0.ꢀ
I Features
•
•
•
High-speed switching
Satisfactory linearity of forward current transfer ratio hFE
Allowing supply with the radial taping
1.ꢀ 0.1
C 1.0
18 0.ꢀ
ꢀ.ꢀ5 0.ꢀ
0.60.1
35 0.1
0.6
I Absolute Maximum Ratings TC = 25°C
1.05
5 0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Symbol
VCBO
VCEO
VEBO
ICP
Rating
Unit
V
0.55 0.1
80
ꢀ.5 0.ꢀ
ꢀ.5 0.ꢀ
60
V
1
ꢀ 3
7
1: Base
2: Collector
3: Emitter
A
IC
4
A
MT4 (MT4 Type Package)
Base current
IB
1
A
TC = 25°C
Ta = 25°C
PC
1
W
Collector power
dissipation
2
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
I Electrical Charteristics TC = 25°C
aram
Collector utoff urrent
mitter cutof current
Symbol
ICBO
Coditions
Min
Typ
Max
100
Unit
µA
µA
V
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
IC = 25 mA, IB = 0
VCE = 4 V, IC = 1 A
V= 4 V, IC = 4 A
VCE = 4 V, IC = 4 A
IC = 4 A, IB = 0.4 A
IEO
100
Colctor to emittee
Forward curre
VCEO
60
70
20
*
hFE1
320
hFE2
VBE
VCE(sat)
fT
Base to emitter volta
Collector to emitter saturation voltage
Transition frequency
Turn-on time
2.0
1.5
V
V
VCE = 12 V, IC = 0.2 A, f = 10 MHz
IC = 4 A, IB1 = 0.4 A, IB2 = − 0.4 A,
VCC = 50 V
80
0.3
1.0
0.2
MHz
µs
ton
Storage time
tstg
µs
Fall time
tf
µs
Note) : Rank classification
*
Rank
Q
P
O
hFE1
70 to 150
120 to 250 160 to 320
1
2SD2266
Power Transistors
PC Ta
IC VCE
IC VBE
20
15
10
5
4
3
2
1
0
6
5
4
3
1
0
VCE=4V
TC=25˚C
IB=40mA
(1) TC=Ta
(2) Without heat sink
(PC=2.0W)
25˚C
35mA
100˚C
TC=–25˚C
30mA
25mA
(1)
20mA
15mA
10mA
5mA
(2)
0
0
20 40 60 80 100 120 140 160
0
1
2
3
4
5
7
0
1
3
4
)
(
)
(
)
(
Base to emie VBE V
Ambient temperature Ta ˚C
Collector to emitter voltge VC
V
VCE(sat) IC
hFE
fT IC
100
104
1000
100
10
IC/IB=10
VCE=4V
VCE=12V
f=10MHz
TC=25˚C
30
10
103
102
10
1
TC=100˚C
3
1
TC=100˚C
–25˚
25˚C
0.3
0.1
2˚C
25˚C
1
0.03
0.01
0.1
0.01 0.03
0.0.03
.1
3
10
0.01 0.03
0.1
0.3
1
3
0
0.1
0.3
1
3
10
(
)
(
)
( )
Collector current IC A
Clector IC
A
Collector curreIC
A
Cob VCB
ton, tstg, tf IC
Area of safe operation (ASO)
1000
1000
100
10
100
10
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2
VCC=50V
=0
1MHz
=25˚C
Non repetitive pulse
TC=25˚C
)
30
10
TC=25˚C
ICP
IC
t=1ms
3
1
tstg
DC
1
ton
tf
0.3
0.1
0.1
0.01
0.03
0.01
1
1
3
10
30
100 300 1000
0
1
2
3
4
5
6
7
)
8
1
3
10
30
100 300 1000
(
)
(
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
V
Collector current IC
A
ꢀ
Power Transistors
2SD2266
Rth(t) t
1000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
100
10
1
(1)
(2)
0.1
10–3
10–2
10–1
1
10
102
103
04
( )
s
Time
t
3
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(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
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or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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Electric Industrial Co., Ltd.
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