NP041A6 [PANASONIC]
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN;
| 型号： | NP041A6 |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：539K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
NP041A6
Silicon PNP epitaxial planar type
For digital circuit
Unit: mm
0.12+0.03
Features
-
0.02
6
5
4
Two elements incorporated into one package (Each transistor is separated)
0 to 0.02
SSS-Mini type 6-pin package, reduction of the mounting area and assembly cost
Maximum package height (0.4 mm) contributes to develop thinner equipments
1
2
3
(0.35) (0.35)
Basic Part Number
UNR31A6 × 2
1.00±0.05
Display at No.1 lead
Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Symbol
VCBO
VCEO
IC
Rating
–50
Unit
V
1: Emitter (Tr1)
4: Emitter (Tr2)
5: Base (Tr2)
–50
V
2: Base (Tr1)
–80
mA
mW
°C
3: Collector (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Total power dissipation *
Junction temperature
PT
125
Tj
125
Marking Symbol: 6U
Storage temperature
T
stg
–55 to +125
°C
Internal Connection
Note) : Measuring on substrate at 17 mm × 10 mm × 1 mm
*
(C1) (B2) (E2)
6
5
4
R1
4.7 kΩ
Tr1
Tr2
R1
4.7 kΩ
1
2
3
(E1) (B1) (C2)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
–50
–50
–4.9
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open) *
Output voltage high-level
VCBO IC = –10 µA, IE = 0
VCEO IC = –2 mA, IB = 0
V
VOH
VOL
ICBO
ICEO
IEBO
hFE
VCC = –5 V, VB = – 0.5 V, RL = 1 kΩ
V
Output voltage low-level
VCC = –5 V, VB = –2.5 V, RL = 1 kΩ
VCB = –50 V, IE = 0
– 0.2
– 0.1
– 0.5
– 0.01
460
V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
µA
µA
mA
VCE = –50 V, IB = 0
VEB = –6 V, IC = 0
VCE = –10 V, IC = –5 mA
160
VCE(sat) IC = –10 mA, IB = – 0.3 mA
– 0.25
+30%
V
R1
–30%
4.7
kΩ
MHz
Transition frequency
fT
VCB = –10 V, IE = 1 mA, f = 200 MHz
80
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Pulse measurement
*
Publication date: July 2005
SJJ00338AED
1
NP041A6
PT T
IC VCE
VCE(sat) IC
a
140
−90
−80
−10
−1
IC / IB = 10
Ta = 25°C
− 0.9 mA
IB = −1.0 mA
− 0.8 mA
120
100
80
− 0.7 mA
− 0.6 mA
− 0.5 mA
−70
−60
− 0.4 mA
− 0.3 mA
−50
−40
−30
−20
− 0.2 mA
60
Ta = 85°C
− 0.1 mA
− 0.1
40
20
−25°C
25°C
−10
0
0
− 0.01
0
20 40 60 80 100 120 140
− 0.1
−1
−10
0
−2
−4
−6
−8 −10 −12
−100
Ambient temperature Ta (°C)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
hFE IC
Cob VCB
IO VIN
−100
−10
−1
500
10
VCE = −10 V
VO
= −5 V
Ta = 25°C
450
400
350
300
250
200
150
Ta = 25°C
Ta = 85°C
25°C
−25°C
100
50
0
1
− 0.1
0
− 0.5 −1.0 −1.5 −2.0 −2.5
−1
−10
−100
0
−5 −10 −15 −20 −25 −30 −35 −40
(V)
Input voltage VIN
Collector current IC (mA)
Collector-base voltage VCB (V)
VIN IO
−10
V
O = − 0.2 V
Ta = 25°C
−1
− 0.1
−1
−10
−100
(m )
A
Output current IO
2
SJJ00338AED
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd. Industrial Co., Ltd.
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