NP042A3 [PANASONIC]

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN;
NP042A3
型号: NP042A3
厂家: PANASONIC    PANASONIC
描述:

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN

开关 光电二极管 晶体管
文件: 总3页 (文件大小:514K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
This product complies with the RoHS Directive (EU 2002/95/EC).  
Composite Transistors  
NP042A3  
Silicon NPN epitaxial planar type  
For digital circuits  
Unit: mm  
0.12+0.03  
0.02  
Features  
6
5
4
Two elements incorporated into one package (Each transistor is separated)  
SSSMini type package, reduction of the mounting area and assembly cost  
Maximum package height (0.4 mm) contributes to develop thinner equipmen
0 to 0.02  
1
2
3
(0.35) (0.35)  
Basic Part Number  
.00±0.05  
No.1 lead  
UNR32A3  
2
Absolute Maximum Ratings T
a
= 25
°
C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
Ra
Unit  
V
VCO  
VCO  
IC  
50  
1: Emitter (Tr1)  
4: Emitter (Tr2)  
5: Base (Tr2)  
V
2: Base (Tr1)  
80  
mA  
mW  
°
C  
3: Collector (Tr2)  
6: Collector (Tr1)  
SSSMini6-F1 Package  
Total power dissipation
*  
Junction temperature  
PT  
125  
Tj  
125  
Marking Symbol: 8S  
Storage temperature  
T
stg  
5 to +12
°
C  
Internal Connection  
Note) : Measuring on subsrate a17 mm 10 m
*
(C1) (B2) (E2)  
6
5
4
R1  
R2  
47 k  
47 kΩ  
Tr1  
Tr2  
R2  
47 kΩ  
R1  
47 kΩ  
1
2
3
(E1) (B1) (C2)  
Electrical Cs
T
a
=
25
°
C
±
3
°
C  
Para
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)
*  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
VCBO I
C
= 10 µA, I
E
= 0  
VCEO IC = 2 mA, IB = 0  
50  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, I
E
= 0  
VCE = 50 V, IB = 0  
VEB = 6 V, I
C
= 0  
0.1  
0.5  
0.1  
µA  
µA  
mA  
VCE = 10 V, I
C
= 5 mA  
80  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
0.25  
V
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, R
L
= 1 kΩ  
4.9  
V
Output voltage low-level  
VCC = 5 V, VB = 3.5 V, R
L
= 1 kΩ  
0.2  
+30%  
1.2  
V
Input resistance  
47  
1.0  
150  
kΩ  
30%  
0.8  
Resistance ratio  
R1 / R2  
fT  
Transition frequency  
VCB = 10 V, IE = 2 mA, f = 200 MHz  
MHz  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Pulse measurement  
*
Publication date: November 2005  
SJJ00339AED  
1
This product complies with the RoHS Directive (EU 2002/95/EC).  
NP042A3  
PT
T  
IC
V
CE  
VCE(sat)
IC  
a
102  
80  
60  
40  
20  
0
IB = 1.0 mA  
0.9 mA  
IC /IB = 10  
0.8 mA  
0.7 mA  
120  
80  
0.6 mA  
0.5 mA  
10  
1
0.4 mA  
0.3 mA  
0.2 mA  
01 mA  
40  
101  
102  
Ta = 85°C  
25°C  
25°C  
T= 25°C  
0
0
101  
1
10  
102  
0
4
12  
40  
80  
120  
Collector current IC (mA)  
Ambient temperature Ta (°C)  
Colletor-emitter voltage VCE (V)  
hFE
I
C  
Cob
VCB  
IO
VIN  
10  
300  
10  
VO = 5 V  
Ta = 25°C  
f = 1 MHz  
Ta = 25C  
V
CE = 10 V  
Ta = 85°C  
25
1
101  
102  
200  
100  
5°C  
1
0
10
1
10  
102  
0
10  
20  
30  
40  
0
1
2
Collector-base voltage VCB (V)  
Input voltage VIN (V)  
Collecr curret IC (mA)  
O  
102  
10  
1
VO = 0.2 V  
Ta = 25°C  
101  
101  
1
10  
102  
Output current IO (mA)  
2
SJJ00339AED  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-  
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions saisfy your requirements.  
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any  
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure  
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire  
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.  
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which  
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.  
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita  
Electric ndurial Co., Ltd.  

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