XN01401 [PANASONIC]
Silicon PNP epitaxial planer transistor; PNP硅外延平面晶体管
| 型号： | XN01401 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer transistor |
| 文件： | 总3页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN1401
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
2.8+0.2
1.5+0.25
-
0.3
0.65±0.15
-0.05
0.65±0.15
5
1
2
Features
■
●
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
4
3
●
Basic Part Number of Element
2SB709A × 2 elements
■
●
0.1 to 0.3
0.4±0.2
Absolute Maximum Ratings (Ta=25˚C)
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
■
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
–60
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
–50
V
Rating
of
element
Marking Symbol: 5V
Internal Connection
–7
V
–100
mA
mA
mW
˚C
ICP
–200
Tr1
5
1
2
PT
300
Overall Junction temperature
Storage temperature
Tj
150
4
Tstg
–55 to +150
˚C
3
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCBO
Conditions
min
–60
–50
–7
typ
max
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
IC = –10µA, IE = 0
VCEO
VEBO
ICBO
ICEO
hFE
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –20V, IE = 0
VCE = –10V, IB = 0
VCE = –10V, IC = –2mA
V
V
– 0.1
–100
460
µA
µA
Collector cutoff current
Forward current transfer ratio
160
0.5
Forward current transfer hFE ratio
hFE (small/large)*1 VCE = –10V, IC = –2mA
0.99
– 0.3
80
Collector to emitter saturation voltage VCE(sat)
IC = –100mA, IB = –10mA
– 0.5
V
MHz
pF
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Collector output capacitance
*1 Ratio between 2 elements
Cob
2.7
1
Composite Transistors
XN1401
PT — Ta
IC — VCE
IC — IB
500
–60
–50
–40
–30
–20
–10
0
–60
–50
–40
–30
–20
–10
0
Ta=25˚C
VCE=–5V
Ta=25˚C
IB=–300µA
400
300
200
100
0
–250µA
–200µA
–150µA
–100µA
–50µA
0
40
80
120
160
)
0
–2 –4 –6 –8 –10 –12 –14 –16 –18
0
–100
–200
–300
–400
)
(
( )
V
(
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base current IB µA
IB — VBE
IC — VBE
VCE(sat) — IC
–240
–200
–160
–120
–80
–40
0
–10
–400
–350
–300
–250
–200
–150
–100
–50
IC/IB=10
VCE=–5V
Ta=25˚C
VCE=–5V
–3
–1
25˚C
–25˚C
Ta=75˚C
Ta=75˚C
–25˚C
25˚C
–0.3
–0.1
–0.03
–0.01
–0.003
–0.001
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
–1
–3
–10 –30 –100 –300 –1000
0
–0.4
–0.8
–1.2
–1.6
(
V
)
(
)
( )
V
Base to emitter voltage VBE
Collector current IC mA
Base to emitter voltage VBE
hFE — IC
fT — IE
Cob — VCB
600
500
400
160
140
120
100
80
8
7
6
5
4
3
2
1
0
VCB=–10V
Ta=25˚C
VCE=–10V
f=1MHz
IE=0
Ta=25˚C
Ta=75˚C
300 25˚C
–25˚C
200
60
40
100
0
20
0
–1
–3
–10 –30 –100 –300 –1000
0.1 0.3
1
3
10
30
100
–1
–2 –3 –5 –10 –20 –30 –50 –100
(
)
(
)
( )
Collector to base voltage VCB V
Collector current IC mA
Emitter current IE mA
2
Composite Transistors
XN1401
NF — IE
NF — IE
h Parameter — IE
20
18
16
14
12
10
8
6
VCB=–5V
Rg=50kΩ
Ta=25˚C
300
200
VCB=–5V
f=1kHz
Rg=2kΩ
5
hfe
Ta=25˚C
100
50
4
hoe (µS)
f=100Hz
1kHz
30
20
3
2
1
0
10
5
10kHz
6
hie (kΩ)
4
3
2
VCE=–5V
f=270Hz
Ta=25˚C
2
hre (×10–4
)
0
1
0.1 0.2 0.3 0.5
1
2
3
(
5
10
0.1 0.2 0.3 0.5
1
2
3
(
5
10
0.01 0.03
0.1 0.3
1
3
10
)
)
(
)
Emitter current IE mA
Emitter current IE mA
Emitter current IE mA
h Parameter — VCE
300
200
IE=2mA
f=270Hz
Ta=25˚C
hfe
100
50
30
20
hoe (µS)
10
5
hre (×10–4
)
3
2
hie (kΩ)
1
–1
–2 –3 –5 –10 –20 –30 –50 –100
(
V
)
Collector to emitter voltage VCE
3
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